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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Photon acceleration of high-intensity vector vortex beams into the extreme ultraviolet

Extreme ultraviolet (XUV) light sources allow for the probing of bound electron dynamics on attosecond scales, interrogation of high-energy-density matter, and access to novel regimes of strong-field quantum electrodynamics. Despite the importance of these applications, coherent XUV sources remain relatively rare, and those that do exist are limited in their peak intensity and spatio-polarization structure. Here, we demonstrate that photon acceleration of an optical vector vortex pulse in the moving density gradient of an electron beam–driven plasma wave can produce a high-intensity, tunable-wavelength XUV pulse with the same vector vortex structure as the original pulse. Quasi-3D, boosted-frame particlein- cell simulations show the transition of optical vector vortex pulses with 800-nm wavelengths and intensities below 10 18 W/cm 2 to XUV vector vortex pulses with 36-nm wavelengths and intensities exceeding 10 20 W/cm 2 over a distance of 1.2 cm. The XUV pulses have sub-femtosecond durations and nearly flat phase fronts. The production of such high-quality, high-intensity XUV vector vortex pulses could expand the utility of XUV light as a diagnostic and driver of novel light–matter interactions.

43 PARTICLE ACCELERATORS↗
NASA NTRS1990

Magnetospheric and exospheric imaging in the extreme ultraviolet

Extreme ultraviolet line emissions by exospheric oxygen ions and neutrals of ionospheric origin can be used to form images of the dynamic magnetospheric regions with sufficient speed to provide a new global means of observing the dynamics of magnetosphere-ionosphere coupling processes. Computer simulations of such exospheric images based on the latest measurements of ion outflow, on known or estimated solar fluxes, and on known emission and excitation rates are shown. An evaluation of the current and foreseeable EUV imaging technology relevant to magnetospheric imaging is also given.

Chiu, Y. T.↗
NASA NTRS1987

Ultraviolet and extreme ultraviolet response of charge-coupled-device detectors

Results of a program to enhance the ultraviolet and extreme ultraviolet response of charge-coupled devices are presented. The ultimate goal of the program is to develop a large format device with both high and stable quantum efficiency from 100 to 3000 A that can be used as a windowless imaging detector in a space environment. Ultraviolet quantum efficiency measurements have been made for several ion-implanted and laser-annealed test CCDs. Quantum efficiencies as high as 22 percent at 2500 A, where the absorption depth in silicon is about 55 A, have been observed in one such test CCD. Quantum efficiency measurements of standard back-illuminated CCDs are also presented.

Stern, R. A.↗
DOE OSTI2025

Extreme Ultraviolet and Beyond Extreme Ultraviolet Lithography Using Amorphous Zeolitic Imidazolate Resists Deposited by Atomic/Molecular Layer Deposition

Amorphous zinc-imidazolate (aZnMIm) resists show potential to meet the demands for next-generation high-numerical aperture (high-NA) metal-containing extreme ultraviolet (EUV) resist materials, given their ease of deposition by atomic/molecular layer deposition (ALD/MLD) at thicknesses of 20 nm and below. Here, this study demonstrates that aZnMIm thin films, previously identified as high-resolution electron beam resists, can also function as negative-tone EUV photoresists. Water development achieves high sensitivity (5 mJ/cm 2 ) but leaves significant residue, while acetic acid development results in poor contrast. A hybrid approach─water followed by acetic acid─enables residue-free development with a sensitivity of 181 mJ/cm 2 . Dry development using 1,1,1,5,5,5-hexafluoroacetylacetone (hfacH) is also possible but shows lower sensitivity (375 mJ/cm 2 ) compared to wet development methods. EUV photoelectron spectroscopy (PES), reflectometry/EUV absorption, total electron yield (TEY), residual gas analysis (RGA), and time-of-flight secondary ion mass spectrometry (TOF-SIMS) were used to investigate the effects of EUV irradiation on aZnMIm resists. Reflectometry experiments reveal an aZnMIm EUV absorption coefficient of 6.2 μm –1 , while PES and TEY analyses show that, compared to poly(4-hydroxystyrene) (PHS), a polymer-based reference resist, aZnMIm emits more primary and secondary electrons but generates fewer slow electrons relative to its primary electron emission; its total electron yield is similar to that of poly(methyl methacrylate) (PMMA) resists. When exposed to EUV, aZnMIm predominantly outgasses H 2 , as determined by RGA. TOF-SIMS measurements demonstrate that high-dose EUV exposure only partially fragments the 2-methylimidazole (2MIm) organic linkers, unlike high-dose electron beam exposure, which is known to completely degrade them. Additionally, aZnMIm resists show promise for potential beyond EUV lithography (BEUVL) due to the presence of Zn, which provides higher sensitivity at a wavelength of 6.7 nm compared to other metal ions, such as Sn, that are currently used in the best-performing EUV metal–organic resists. TEY measurements demonstrate that aZnMIm emits nearly twice as many electrons as PHS at 6.7 nm. The BEUV TEY of aZnMIm also surpasses that of PMMA, poly(pentafluorostyrene), and poly(4-iodostyrene), with the latter two being known for their high EUV TEYs. This work provides insight into zeolitic imidazolate framework (ZIF)-based EUV and BEUV resists and highlights their potential for both wet and dry development.

lithography↗
NASA NTRS2002

Silicon Lightweight Mirrors (SLMS) for Ultraviolet and Extreme Ultraviolet Imaging Mirrors

Subtopic 01-S1.06 requires mirrors with a diameter of 0.5-2.4 meters, areal density less than 20 kg/sq m, a figure specification of 0.02-0.005 waves root mean square (rms) at 633 nanometers, a surface roughness 0.5-1 nanometers rms, and a midfrequency error of 1.0-2.5 nanometers rms for use in the infrared (IR) to extreme ultra violet (EUV) waveband. Schafer's Phase II objective is to use Silicon Lightweight Mirrors (SLMS), a novel, all-silicon, foam-core, lightweight mirror technology, to build three imaging mirrors for the Next Generation Space Telescope Near Infrared Camera (NIRCam) Engineering Test Unit: M0 (a flat), M2 (a concave sphere) and M3R (an oblate spheroid). The surface figure error specification for the NIRCam imaging mirrors is 8 nanometers rms (0.013 waves rms at 633 nanometers), equivalent to that required for ultraviolet (UV) and EUV mirrors, and this figure must be maintained at the 35 K operational temperature of NGST. The surface roughness required is 30 A rms since NIRCam operates in the visible to infrared (VIS/IR) (0.65-5 microns). We will produce mounts for mirrors M2 and M3R using the complementary thermally matched C/SiC material demonstrated by Schafer under another NASA SBIR, NAS8-98137.

Goodman, W. A.↗
NASA NTRS1992

Far ultraviolet and extreme ultraviolet rocket instrumentation for measuring the solar spectral irradiance and terrestrial airglow

A sounding-rocket experiment is being developed for the study of EUV spectral irradiance and its effects on the upper atmosphere, using three solar EUV instruments devised by the Laboratory for Atmospheric and Space Physics. These include a 25-cm Rowland circle EUV spectrograph, an array of Si X-UV photodiodes, and an X-UV imager with 20 arcsec resolution of the sun.

Woods, Thomas N.↗
NASA NTRS2003

The Solar Chromosphere/Corona Interface. I. Far-Ultraviolet to Extreme-Ultraviolet Observations and Modeling of Unresolved Coronal Funnels

A coronal funnel model, developed by D. Rabin, was tested against a calibrated spectroheliogram recorded in the 170-1 75 A bandpass. This image was recorded on board a sounding-rocket experiment flown on 1994 November 3, called the Multi-Spectral Solar Telescope Array II (MSSTA II). MSSTA, a joint project of Stanford University, the NASA Marshall Space Flight Center, and the Lawrence Livermore National Laboratory' is an observing platform composed of a set of normal-incidence, multilayer-coated optics designed to obtain narrow-bandpass, high-resolution images (1 sec.- 3 sec.) at selected far-ultraviolet (FUV), extreme-ultraviolet (EUV), and soft X-ray wavelengths (44-1550 A). Using full disk images centered at 1550 A (C IV) and 173 A (Fe IX/X), the funnel model, which is based on coronal back-heating, was tested against the data incorporating observed constraints on global coverage and measured flux. Found was a class of funnel models that could account for the quiescent, globally diffuse and unresolved emission seen in the 171-175 A bandpass, where the funnels are assumed to be rooted in the C IV supergranular network. These models, when incorporated with the CHIANTI spectral code, suggest that this emission is mostly of upper transition region origin and primarily composed of Fe IX plasma. The funnels are found to have constrictions, Gamma approx. 6-20, which is in good agreement with the observations. Further, the fitted models simultaneously satisfy global areal constraints seen in both images; namely,that a global network of funnels must cover approx. 700 - 95% of the total solar surface area seen in the 171-175 A image, and a 5% of the disk area seen in the 1550 A bandpass. These findings support the configuration of the EUV magnetic network as suggested by Reeves et al. and put forth in more detail by Gabriel. Furthermore, the models are in good agreement with differential emission measure estimates made of the transition region by J. C. Raymond & J. G. Doyle for temperatures 250,000 K less than or = T less than or = 650,000 K, based on full-disk observations made on board Skylab.

Martinez-Galarce, Dennis S.↗
DOE OSTI2026

Recent efforts of vapour-phase strategies for EUV resist toward high- and hyper-NA extreme ultraviolet lithography

Extreme ultraviolet lithography (EUVL, λ = 13.5 nm) is critical for sub-1 nm technology nodes but remains constrained by inherent trade-offs among resolution, line-edge roughness (LER), and sensitivity. Stochastic effects originating from photon shot noise, low-energy secondary electron blur, and the random distribution of resist components further limit its advancement toward high numerical-aperture (NA, NA = 0.55) and hyper-NA (NA ≥0.75) EUVL. While the optimization of spin-on chemically amplified resists (CARs) continues, metal-oxide resists (MORs) have emerged as strong candidates for next-generation EUVL by incorporating metals with high EUV absorption coefficients, which enhances both resist sensitivity and etch resistance during pattern transfer. Besides spin-coating, recent advances in vapour-phase techniques, such as vapour-phase infiltration (VPI), chemical vapour deposition (CVD), and molecular atomic layer deposition (MALD), offer promising pathways to achieve new resist platforms, such as dry resists, that satisfy the stringent thickness and uniformity requirements of next-generation EUVL. These methods enable the direct incorporation of metal species into existing resist matrices or the formation of hybrid inorganic–organic resist platforms, thereby improving film uniformity, etch durability, and pattern fidelity while mitigating stochastic defects. This review highlights the latest advancements in vapour-phase-synthesized EUV resists, emphasizing material design, lithographic performance, and the underlying exposure mechanisms. Although still emerging, vapour-phase strategies are paving the way for an all-dry integration framework that could improve EUV patterning workflows and meet the demands of future technology nodes.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Directed self-assembly of block copolymers for high-precision patterning in the era of extreme ultraviolet lithography

Extreme ultraviolet (EUV) lithography enables unprecedented resolution in semiconductor patterning but faces critical challenges in developing resist materials that achieve high-precision at economically viable throughput. Directed self-assembly (DSA) of block copolymers (BCPs) offers a promising solution for pattern rectification by leveraging thermodynamically determined domain structures to decouple BCP pattern quality from the imperfect original lithographic pattern. This prospective presents an overview of recent progress on the EUV + DSA strategy, covering advances in BCP material design, processing, metrology, and pattern transfer. We highlight recent advances in high-χ BCPs with perpendicular orientation and domain spacings compatible with EUV dimensions, leveraging A-b-(B-r-C) architectures. We also discuss progress in chemical pre-pattern fabrication using both positive- and negative tone resists, along with processing strategies to minimize defects and roughness based on BCP thermodynamics and assembly kinetics. We further examine metrology platforms for characterizing the thermodynamics of BCP materials and quantifying the size and shape of BCP domains. Lastly, we review pattern transfer strategies for generating functional inorganic masks suitable for semiconductor manufacturing. Together, these advances highlight the potential of DSA to complement EUV lithography, offering a pathway to address critical challenges in achieving high-precision patterning for the semiconductor industry.

Lee, Kyunghyeon [Univ. of Chicago, IL (United Stat↗
NASA NTRS1976

A rocket measurement of the extreme ultraviolet dayglow

Extreme ultraviolet spectra of the mid-latitude dayglow in the wavelength range of 550 to 1250A have been obtained with a rocket borne grating spectrometer at a resolution of 20A. Spectra were obtained in the altitude range of 140 to 280 km. The spectra are dominated by emissions from atomic multiplets and no molecular bands have been identified with certainty. The strongest emissions other than H Lyman-alpha are OI (989) and OII (834). Other prominent emissions include He I(584), N II(916) and N II(1085). An unexpected feature near 612A has an intensity comparable to He I(584).

Christensen, A. B.↗
NASA NTRS1980

The equatorial aurora in the extreme ultraviolet

The extreme ultraviolet telescope on the Apollo-Soyuz mission observed the equatorial aurora from an altitude of 220 km on four separate occasions in July 1975, in quiet geomagnetic conditions (Ap = 6). In all cases signals well above ambient background in the 50-150, 114-150, 170-600, and 500-780 A bands were recorded as the spacecraft moved across the equator and the instrument viewed the atmosphere below it. The observed emissions are confined to a band roughly 10 to 20 deg in width with the peak emission occurring in the range -15 to +2 deg magnetic latitude. No enhancement on the 1350-1550 A channel was noted. The observed signals are interpreted as recombination radiation of energetic helium and, possibly, oxygen ions originating in the terrestrial ring current.

Paresce, F.↗
NASA NTRS1994

Astronomy and the Extreme Ultraviolet Explorer satellite

The extreme ultraviolet wave band (100 to 912 angstroms) was thought until recently to be useless to astronomy, primarily because the opacity of the interstellar medium would prevent observations at these wavelengths. However, the interstellar medium has been found to be markedly inhomogeneous in both density and ionization state and the sun is fortunately located in a region of low extreme ultraviolet opacity. The Extreme Ultraviolet Explorer, launched in June 1992, has surveyed the sky in this wave band and has detected a wide variety of astronomical sources at considerable distances, including some extragalactic objects. Studies in the extreme ultraviolet band have already begun to increase our understanding of the contents of the universe.

EUVE Project↗
NASA NTRS1982

The Extreme Ultraviolet Explorer

The Extreme Ultraviolet Explorer Mission is described. The purpose of this mission is to search the celestial sphere for astronomical sources of extreme ultraviolet (EUV) radiation (100 to 1000 A). The search will be accomplished with the use of three EUV telescopes, each sensitive to different bands within the EUV band. A fourth telescope will perform a higher sensitivity search of a limited sample of the sky in a single EUV band. In six months, the entire sky will be scanned at a sensitivity level comparable to existing surveys in other more traditional astronomical bandpasses.

Malina, R. F.↗