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At least 19 records

Vibrational Power Flow Analysis of Rods and Beams

A new method to model vibrational power flow and predict the resulting energy density levels in uniform rods and beams is investigated. This method models the flow of vibrational power in a manner analogous to the flow of thermal power in a heat conduction problem. The classical displacement solutions for harmonically excited, hysteretically damped rods and beams are used to derive expressions for the vibrational power flow and energy density in the rod and beam. Under certain conditions, the power flow in these two structural elements will be shown to be proportional to the energy density gradient. Using the relationship between power flow and energy density, an energy balance on differential control volumes in the rod and beam leads to a Poisson's equation which models the energy density distribution in the rod and beam. Coupling the energy density and power flow solutions for rods and beams is also discussed. It is shown that the resonant behavior of finite structures complicates the coupling of solutions, especially when the excitations are single frequency inputs. Two coupling formulations are discussed, the first based on the receptance method, and the second on the travelling wave approach used in Statistical Energy Analysis. The receptance method is the more computationally intensive but is capable of analyzing single frequency excitation cases. The traveling wave approach gives a good approximation of the frequency average of energy density and power flow in coupled systems, and thus, is an efficient technique for use with broadband frequency excitation.

Wohlever, James Christopher↗

Lower Hybrid Oscillations in Multicomponent Space Plasmas Subjected to Ion Cyclotron Waves

It is found that in multicomponent plasmas subjected to Alfven or fast magnetosonic waves, such as are observed in regions of the outer plasmasphere and ring current-plasmapause overlap, lower hybrid oscillations are generated. The addition of a minor heavy ion component to a proton-electron plasma significantly lowers the low-frequency electric wave amplitude needed for lower hybrid wave excitation. It is found that the lower hybrid wave energy density level is determined by the nonlinear process of induced scattering by ions and electrons; hydrogen ions in the region of resonant velocities are accelerated; and nonresonant particles are weakly heated due to the induced scattering. For a given example, the light resonant ions have an energy gain factor of 20, leading to the development of a high-energy tail in the H(+) distribution function due to low-frequency waves.

Khazanov, G. V.↗

DLTS analysis of radiation-induced defects in one-MeV electron irradiated germanium and Alsub0.17Gasub0.83As solar cells

The radiation-induced deep-level defects in one-MeV electron-irradiated germanium and AlxGal-xAs solar cell materials using the deep-level transient spectroscopy (DLTS) and C-V techniques were investigated. Defect and recombination parameters such as defect density and energy levels, capture cross sections and lifetimes for both electron and hole traps were determined. The germanium and AlGaAs p/n junction cells were irradiated by one-MeV electrons. The DLTS, I-V, and C-V measurements were performed on these cells. The results are summarized as follows: (1) for the irradiated germanium samples, the dominant electron trap was due to the E sub - 0.24 eV level with density around 4x10 to the 14th power 1/cu cm, independent of electron fluence, its origin is attributed to the vacancy-donor complex defect formed during the electron irradiation; (2) in the one-MeV electron irradiated Al0.17Ga0.83 as sample, two dominant electron traps with energies of Ec-0.19 and -0.29 eV were observed, the density for both electron traps remained nearly constant, independent of electron fluence. It is shown that one-MeV electron irradiation creates very few or no new deep-level traps in both the germanium and AlxGa1-xAs cells, and are suitable for fabricating the radiation-hard high efficiency multijunction solar cells for space applications.

Li, S. B.↗

Study of radiation induced deep-level defects in proton irradiated AlGaAs-GaAs solar cells

Radiation induced deep-level defects (both electron and hole traps) in proton irradiated AlGaAs-GaAs p-n junction solar cells are investigated along with the correlation between the measured defect parameters and the solar cell performance parameters. The range of proton energies studied was from 50 KeV to 10 MeV and the proton fluence was varied from 10 to the 10th power to 10 to the 13th power P/sq cm. Experimental tools employed include deep-level transient spectroscopy, capacitance-voltage, current voltage, and SEM-EBIC methods. Defect and recombination parameters such as defect density and energy level, capture cross section, carrier lifetimes and effective hole diffusion lengths in n-GaAs LPE layers were determined from these measurements.

Li, S. S.↗

Wave spectra of a shoaling wave field: A comparison of experimental and simulated results

Wave profile measurements made from an aircraft crossing the North Carolina continental shelf after passage of Tropical Storm Amy in 1975 are used to compute a series of wave energy spectra for comparison with simulated spectra. Results indicate that the observed wave field experiences refraction and shoaling effects causing statistically significant changes in the spectral density levels. A modeling technique is used to simulate the spectral density levels. Total energy levels of the simulated spectra are within 20 percent of those of the observed wave field. The results represent a successful attempt to theoretically simulate, at oceanic scales, the decay of a wave field which contains significant wave energies from deepwater through shoaling conditions.

Morris, W. D.↗

Study of radiation induced deep-level defects and annealing effects in the proton irradiated AlGaAs-GaAs solar cells

The radiation induced deep-level defects and the recombination parameters in the proton irradiated AlGaAs-GaAs p-n junction solar cells were investigated over a wide range of proton energies (from 50 KeV to 10 MeV) and proton fluences (from 10 to the 10th to 10 to the 13th P/sq cm), using DLTS, I-V, C-V, and SEM-EMIC measurement techniques. The measurements were used to determine the defect and recombination parameters such as defect density and energy level, carrier lifetimes, and the hole diffusion lengths in the GaAs LPE layers. Results show that a good correlation was obtained between the measured defect parameters and the dark recombination current as well as the performance parameters of the solar cells. The most damages to the cell were produced by the 200 KeV protons. In addition, the effects of low temperatures (200 to 400 C) thermal annealing on the deep-level defects and the dark current of the 200 KeV proton irradiated samples were examined.

Li, S. S.↗

Experimental and computer studies of the radiation effects in silicon solar cells

A summary of selected experimental results obtained on lithium-diffused bulk silicon is presented. Particular emphasis is placed on the radiation-induced degradation and thermal annealing of minority carriers in bulk silicon because solar cell output is related to the minority carrier lifetime. The temperature dependence of the minority carrier lifetime indicates the density and energy levels of the recombination centers and provides clues to their identity. Electron spin resonance and infrared absorption techniques are used to investigate the introduction and anneal of three specific radiation induced defects, which are thought to contribute to the recombination process.

Leadon, R. E.↗

Effects of thermal annealing on the deep-level defects and I-V characteristics of 200 keV proton irradiated AlGaAs-GaAs solar cells

Detailed characterization of deep-level defects and analysis of dark I-V data in 200 keV proton irradiated AlGaAs-GaAs solar cells have been carried out for several proton fluences (5 x 10 to the 11th, 10 to the 12th, and 10 to the 13th P/sq cm), using DLTS, C-V, and I-V measurement techniques. To study the effect of low temperature thermal annealing on the deep-level defect properties, these irradiated samples were annealed in vacuum at 300 C for one hour. Comparison was then made on the measured defect parameters (i.e., defect energy levels and densities) and the dark I-V characteristics for both the annealed and unannealed samples.

Li, S. S.↗

Electronic properties of deep-level defects in proton irradiated AlGaAs-GaAs solar cells

Deep level transient spectroscopy and capacitance voltage techniques as well as analysis of the forward current voltage (I-V) characteristics and SEM-EIC data were carried out for proton irradiated GaAs solar cells over a wide range of proton energies and proton fluences. Defect and recombination parameters such as defect energy levels and density, carrier capture cross sections and lifetimes as well as diffusion lengths in the undoped n-GaAs LPE layers were determined. Good correlation between these defect parameters and solar cell performance parameters was obtained for GaAs solar cells irradiated by 200 and 290 KeV protons. It was found that 200 to 290 KeV protons will produce the most defects and damages to the GaAs solar cell structure used. The influence of the low temperature (200 to 400 C) periodic thermal annealing on the deep level defects and the performance of the 200 KeV proton irradiated cells is discussed.

Li, S. S.↗

Grown-in defects and defects produced by 1-Me electron irradiated in Al0.3Ga0.7As P-N junction solar cells

Studies of grown-in defects and defects produced by the one-MeV electron irradiation in Al sub 0.3 Ga sub 0.7As p-n junction solar cells fabricated by liquid phase epitaxial (LPE) technique were made for the unirradiated and one-MeV electron irradiated samples, using DLTS and C-V methods. Defect and recombination parameters such as energy level, defect density, carrier capture cross sections and lifetimes were determined for various growth, annealing, and irradiation conditions.

Li, S. S.↗

Atomic calculations for Ca XVII - UV and X-ray lines

Doschek et al. (1977) have pointed out the importance of the Ca XVII UV lines as an electron density diagnostic. Energy levels, transition probabilities, and collision strengths, are presently obtained for the 2s2, 2s 2p, 2p2, 2s 3s, 2s 3p, and 2s 3d configurations of Ca XVII, and the theoretical intensity ratios for the UV and X-ray lines are compared with observed intensities in solar flare spectra. Inconsistencies are indicated in the analysis of UV data, and discrepancies between observed and theoretical intensity ratios indicate that further studies are required. New identifications are suggested in the X-ray wavelength region.

Bhatia, A. K.↗

Ratios of molecular hydrogen line intensities in shocked gas - Evidence for cooling zones

Column densities of molecular hydrogen have been calculated from 19 infrared vibration-rotation and pure rotational line intensities measured at peak 1 of the Orion molecular outflow. The run of column density with energy level is similar to a simple coolng zone model of the line-emitting region, but is not well fitted by predictions of C-shock models current in the literature.

Brand, P. W. J. L.↗

A proposed concept for the extraction of energy stored in magnetic or electric fields in space

It is known that enormous energy resources associated with electric, magnetic, gravitational, and other fields exist in space. It is also known that the major difficulty in 'tapping' this energy arises from the extremely low density level at which this energy exists. An analytical study has been made of a particular scheme that appears promising for an efficient utilization of some of these energy resources in propulsion. The principle involves the exchange of energy between a fluctuating magnetic field and a velocity field of electrically conducting fluid in turbulent motion located onboard a spacecraft. Under certain conditions the total energy of the turbulent flow field onboard the spacecraft can be increased and this increase appears in the form of Joulean heat. The utilization of the fluctuating part of the magnetic field, in the form of Joulean dissipation (because of its random character) does not introduce any drag on the spacecraft. The application appears promising for flights in the vicinity of Jupiter and other planets. The rate at which energy is gained by the conducting fluid is of the order of 100 watts when the rms value of the fluctuating magnetic field strength is about 1 gauss.

Papailiou, D. D.↗

Contribution of low-energy ionospheric protons to the plasma sheet

The magnetospheric transport of low-energy ionospheric ions is examined by means of three-dimensional particle codes. Emphasis is placed on the behavior of polar wind and cleft originating protons. It is demonstrated that, via nonadiabatic motion inside the neutral sheet, these ions can significantly contribute to the populations of the plasma sheet. The importance of this contribution is found to depend critically upon the dynamics of particles originating from the highest latitudes, as these possibly have access to the distant tail. Hence it is shown that polar wind H(+) expelled into the magnetosphere at very low energies (in the electron volt range) preferentially feed the plasma sheet during quiet times, experiencing accelerations up to several kiloelectron volts upon return into the inner magnetosphere. In contrast, during disturbed times, the intensifying magnetospheric convection confines this population to low L shells where it travels in a nearly adiabatic manner. As for the protons originating from the cleft fountain, the simulations reveal that they can be transported up to the vicinity of the distant neutral line in the nightside sector. Via interaction with the neutral sheet, these ionospheric ions are rapidly raised to the characteristic plasma sheet energy range. The density levels contributed by these populations are quite substantial when compared to those measured in situ. These simulations establish an active role of low-energy ionospheric ions in the overall magnetospheric dynamics.

Delcourt, D. C.↗

Pulse Power Capability Of High Energy Density Capacitors Based on a New Dielectric Material

A new dielectric composite consisting of a polymer coated onto a high-density metallized Kraft has been developed for application in high energy density pulse power capacitors. The polymer coating is custom formulated for high dielectric constant and strength with minimum dielectric losses. The composite can be wound and processed using conventional wound film capacitor manufacturing equipment. This new system has the potential to achieve 2 to 3 J/cu cm whole capacitor energy density at voltage levels above 3.0 kV, and can maintain its mechanical properties to temperatures above 150 C. The technical and manufacturing development of the composite material and fabrication into capacitors are summarized in this paper. Energy discharge testing, including capacitance and charge-discharge efficiency at normal and elevated temperatures, as well as DC life testing were performed on capacitors manufactured using this material. TPL (Albuquerque, NM) has developed the material and Aerovox (New Bedford, MA) has used the material to build and test actual capacitors. The results of the testing will focus on pulse power applications specifically those found in electro-magnetic armor and guns, high power microwave sources and defibrillators.

Winsor, Paul↗

Fluorescent vibration-rotation excitation of cometary C2

The statistical equilibrium equations that determine the population densities of the energy levels in cometary C2 molecules due to fluorescent excitation are examined in detail. The adopted model and molecular parameters are discussed, and a theoretical estimate is made of the two intercombination transition moments. From the theoretical population densities in the various rotational levels, flux ratios and synthetic emission profiles are calculated as functions of the a 3Pi(u) - X 1Sigma(g)+ and the c 3Sigma(u)+ - X 3Sigma(g)+ intercombination transition moments. The influence of each of these two transitions separately on the vibrational and rotational excitation temperatures is investigated. The observed emission spectra of the (0,0) Swan band in Comet Halley are presented and compared to the synthetic profiles.

Gredel, Roland↗

Glennan Microsystems Initiative

During the 2001-2002 award period, we performed research on Pt/Ti/bare 6H-SiC and bare 4H-SiC interfaces in order to identify their electronic properties as a function of surface preparation. The overall aim of this work is to optimize the electronic properties of metal contacts to SiC as well as the active SiC material itself as a function of surface preparation and subsequent processing. Initially, this work has involved identifying bare surface, subsurface, and metal induced gap states at the metal-SiC contact and correlating energies and densities of deep levels with Schottky barrier heights. We used low energy electron-excited nanoluminescence (LEEN) spectroscopy, X-ray photoemission spectroscopy (XPS), and Secondary Ion Mass Spectrometry (SIMS) in order to correlate electronic states and energy bands with chemical composition, bonding, and crystal structure. A major development has been the discovery of polytype transformations that occur in 4H-SiC under standard microelectronic process conditions used to fabricate SiC devices. Our results are consistent with the stacking fault generation, defect formation, and consequent degradation of SiC recently reported for state-of-the-art ABB commercial diodes under localized electrical stress. Our results highlight the importance of -optimizing process conditions and material properties - anneal times, temperatures and doping to control such structural changes within epitaxial SiC layers. Thus far, we have established threshold times and temperatures beyond which 4H-SiC exhibits 3C-SiC transformation bands for a subset of dopant concentrations and process conditions. On the basis of this temperature time behavior, we have been able to establish an activation energy of approximately 2.5 eV for polytype transformation and dislocation motion. Work continues to establish the fundamental mechanisms underlying the polytype changes and its dependence on material parameters.

Brillson, Leonard J.↗