Vapor Deposited Tungsten for Application as a Thermionic Emitter Material
Purity and resistance to grain growth of vapor deposited tungsten tubing for use as thermionic emitter
THERMIONIC EMISSION↗
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Investigation of the growth of directionally solidified eutectics with potential as electron emitters
The construction of a solar furnace was completed and it was tested after a preliminary alignment of the heliostat mirrors. After final alignment, the solar furnace is used for directional solidification experiments designed to simulate space conditions.
Chapman, A. T.↗
The Role of Plasma in Plasma Enhanced Chemical Vapour Deposition of Nanostructure Growth
Chemical vapour deposition (CVD) has become the preferred process for high yield growth of carbon nanotubes and nanofibres because of its ability to pattern growth through lithographic positioning of transition metal catalysts on substrates. Many potential applications of nanotubes such as field emitters [1] require not only patterned growth but also vertical alignment. Some degree of ali,ment in thermal CVD processes can be obtained when carbon nanotubes are grown closely together as a result of van der Waals interactions. The ali,onment however is marginal, and the van der Waals prerequisite makes growth of freestanding nanofibres with thermal CVD unrealizable. The application of electric fields as a means of ali,onment has been shown to overcome this limitation [2-5], and highly aligned nanostructures can be grown if electric fields on the order of 0.5 V/microns are employed. Plasma enhanced CVD in various configurations including dc, rf, microwave, inductive and electron cyclotron resonance has been pursued as a means of enabling alignment in the CVD process. However, the sheath fields for the non-dc sources are in general not sufficient for a high degree of ali,pment and an additional dc bias is usually applied to the growth substrate. This begs the question as to the actual role of the plasma. It is clear that the plasma itself is not required for aligned growth as references [3] and [4] employed fields through small applied voltages (3-20 V) across very small electrode spacings (10-100 microns) and thus avoided striking a discharge.
Hash, David B.↗
Concurrent Supermassive Black Hole and Galazy Growth: Linking Environment and Nuclear Activity in Zeta Equals 2.23 H Alpha Emitters
We present results from an approximately equal 100 ks Chandra observation of the 2QZ Cluster 1004+00 structure at z = 2.23 (hereafter 2QZ Clus). 2QZ Clus was originally identified as an overdensity of four optically-selected QSOs at z = 2.23 within a 15 × 15 arcmin square region. Narrow-band imaging in the near-IR (within the K band) revealed that the structure contains an additional overdensity of 22 z = 2.23 H alpha-emitting galaxies (HAEs), resulting in 23 unique z = 2.23 HAEs/QSOs (22 within the Chandra field of view). Our Chandra observations reveal that three HAEs in addition to the four QSOs harbor powerfully accreting supermassive black holes (SMBHs), with 2-10 keV luminosities of approximately equal (8-60) × 10(exp 43) erg s(exp−1) and X-ray spectral slopes consistent with unobscured active galactic nucleus (AGN). Using a large comparison sample of 210 z = 2.23 HAEs in the Chandra-COSMOS field (C-COSMOS), we find suggestive evidence that the AGN fraction increases with local HAE galaxy density. The 2QZ Clus HAEs reside in a moderately overdense environment (a factor of approximately equal 2 times over the field), and after excluding optically-selected QSOs, we find that the AGN fraction is a factor of approximately equal 3.5(+3.8/ −2.2) times higher than C-COSMOS HAEs in similar environments. Using stacking analyses of the Chandra data and Herschel SPIRE observations at 250micrometers, we respectively estimate mean SMBH accretion rates ( M(BH)) and star formation rates (SFRs) for the 2QZ Clus and C-COSMOS samples. We find that the mean 2QZ Clus HAE stacked X-ray luminosity is QSO-like (L(2−10 keV) approximately equal [6-10] × 10(exp 43) erg s(exp −1)), and the implied M(BH)/SFR approximately equal (1.6-3.2) × 10(exp −3) is broadly consistent with the local M(BH)/Stellar Mass relation and z approximately equal 2 X-ray selected AGN. In contrast, the C-COSMOS HAEs are on average an order of magnitude less X-ray luminous and have M(BH)/SFR approximately equal (0.2-0.4) × 10(exp −3), somewhat lower than the local MBH/M relation, but comparable to that found for z approximately equal 1-2 star-forming galaxies with similar mean X-ray luminosities. We estimate that a periodic QSO phase with duty cycle approximately 2%-8% would be sufficient to bring star-forming galaxies onto the local M(BH)/Stellar Mass relation. This duty cycle is broadly consistent with the observed C-COSMOS HAE AGN fraction (Approximately equal 0.4%-2.3%) for powerful AGN with LX approximately greater than 10(exp 44) erg s(exp −1). Future observations of 2QZ Clus will be needed to identify key factors responsible for driving the mutual growth of the SMBHs and galaxies.
Lehmer, B. D.↗
Group-III Nitride Field Emitters
Field-emission devices (cold cathodes) having low electron affinities can be fabricated through lattice-mismatched epitaxial growth of nitrides of elements from group III of the periodic table. Field emission of electrons from solid surfaces is typically utilized in vacuum microelectronic devices, including some display devices. The present field-emission devices and the method of fabricating them were developed to satisfy needs to reduce the cost of fabricating field emitters, make them compatible with established techniques for deposition of and on silicon, and enable monolithic integration of field emitters with silicon-based driving circuitry. In fabricating a device of this type, one deposits a nitride of one or more group-III elements on a substrate of (111) silicon or other suitable material. One example of a suitable deposition process is chemical vapor deposition in a reactor that contains plasma generated by use of electron cyclotron resonance. Under properly chosen growth conditions, the large mismatch between the crystal lattices of the substrate and the nitride causes strains to accumulate in the growing nitride film, such that the associated stresses cause the film to crack. The cracks lie in planes parallel to the direction of growth, so that the growing nitride film becomes divided into microscopic growing single-crystal columns. The outer ends of the fully-grown columns can serve as field-emission tips. By virtue of their chemical compositions and crystalline structures, the columns have low work functions and high electrical conductivities, both of which are desirable for field emission of electrons. From examination of transmission electron micrographs of a prototype device, the average column width was determined to be about 100 nm and the sharpness of the tips was determined to be characterized by a dimension somewhat less than 100 nm. The areal density of the columns was found to about 5 x 10(exp 9)/sq cm . about 4 to 5 orders of magnitude greater than the areal density of tips in prior field-emission devices. The electric field necessary to turn on the emission current and the current per tip in this device are both lower than in prior field-emission devices, such that it becomes possible to achieve longer operational lifetime. Moreover, notwithstanding the lower current per tip, because of the greater areal density of tips, it becomes possible to achieve greater current density averaged over the cathode area. The thickness of the grown nitride film (equivalently, the length of the columns) could lie between about 0.5 microns and a few microns; in any event, a thickness of about 1 micron is sufficient and costs less than do greater thicknesses. It may be possible to grow nitride emitter columns on glass or other substrate materials that cost less than silicon does. What is important in the choice of substrate material is the difference between the substrate and nitride crystalline structures. Inasmuch as the deposition process is nondestructive, an ability to grow emitter columns on a variety of materials would be advantageous in that it would facilitate the integration of field-emitter structures onto previously processed integrated circuits.
Bensaoula, Abdelhak↗
p-n Junction Diodes Fabricated on Si-Si/Ge Heteroepitaxial Films
A set of photolithographic masks was designed for the fabrication of diodes in the Si-Si/Ge material system. Fabrication was performed on samples obtained from two different wafers: (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition. Two different process runs were attempted for the fabrication of Si-Si/Ge (n-p) and Si/Ge-Si (p-n) junction diodes formed between the emitter-base and base-collector layers, respectively, of the Si-Si/Ge-Si HBT structure. One of the processes employed a plasma etching step to expose the p-layer in the structure (1) and to expose the e-layer in structure (2). The Contact metallization used for these diodes was a Cu-based metallization scheme that was developed during the first year of the grant. The plasma-etched base-collector diodes on structure (2) exhibited well-behaved diode-like characteristics. However, the plasma-etched emitter-base diodes demonstrated back-to-back diode characteristics. These back-to back characteristics were probably due to complete etching of the base-layer, yielding a p-n-p diode. The deep implantation process yielded rectifying diodes with asymmetric forward and reverse characteristics. The ideality factor of these diodes were between 1.6 -2.1, indicating that the quality of the MBE grown epitaxial films was not sufficiently high, and also incomplete annealing of the implantation damage. Further study will be conducted on CVD grown films, which are expected to have higher epitaxial quality.
Das, K.↗
Investigation of Field Emitter Array Vacuum Microtriodes for Space Electronics Applications
Research into processing techniques for fabrication of vacuum microelectronic devices has been carried out, with special emphasis being given to the growth of silicon dioxide thin films. Oxide films ranging from 30 nm to approximately 2 micrometers have been grown on single crystal silicon wafers. Metal-oxide-semiconductor capacitor test structures have been made from some of these oxide films, and current-versus-voltage plots for these structures have been measured. It has been observed that the rate of applied voltage across the oxide films produces marked differences in measured leakage current. Breakdown fields across two of the thinnest oxide films have been measured and are comparable with highest values reported in literature. Several silicon wafers were processed to make field- emitter array diodes, and were delivered to collaborators at NASA-Lewis Research Center for final fabrication steps and testing.
Smith, Mark A.↗
Progress toward cascade cells made by OM-VPE
Organometallic Vapor Phase Epitaxy (COM-VPE) was used to make a sophisticated monolithic cascade cell, with a peak AMO efficiency of 16.6%, not corrected for 14% grid coverage. The cell has 9 epitaxial layers. The top cell is 1.35 microns thick with a 0.1 micron thich emitter. Both cells are heteroface n-p structures. The cascade cell uses metal interconnects. Details of growth and processing are described.
Borden, P. G.↗
Methods for forming group III-V arsenide-nitride semiconductor materials
Methods are disclosed for forming Group III--arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.
Major, Jo S.↗
III-V arsenide-nitride semiconductor
III-V arsenide-nitride semiconductor are disclosed. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V materials varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V material can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.
Major, Jo S.↗
Methods for forming group III-arsenide-nitride semiconductor materials
Methods are disclosed for forming Group III-arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.
Major, Jo S.↗
III-V aresenide-nitride semiconductor materials and devices
III-V arsenide-nitride semiconductor crystals, methods for producing such crystals and devices employing such crystals. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.
Major, Jo S.↗
Graded-bandgap AlGaAs solar cells for AlGaAs/Ge cascade cells
Some p/n graded-bandgap Al(x)Ga(1-x)As solar cells were fabricated and show AMO conversion efficiencies in excess of 15 percent without antireflection (AR) coatings. The emitters of these cells are graded between 0.008 is less than or equal to x is less than or equal to 0.02 during growth of 0.25 to 0.30 micron thick layers. The keys to achieving this performance were careful selection of organometallic sources and scrubbing oxygen and water vapor from the AsH3 source. Source selection and growth were optimized using time-resolved photoluminescence. Preliminary radiation-resistance measurements show AlGaAs cells degraded less than GaAs cells at high 1 MeV electron fluences, and AlGaAs cells grown on GaAs and Ge substrates degrade comparably.
Timmons, M. L.↗
Carbon Nanotubes/Nanofibers by Plasma Enhanced Chemical Vapour Deposition
Plasma enhanced chemical vapour deposition (PECVD) has been recently used for the production of vertically aligned carbon nanotubedfibers (CN) directly on substrates. These structures are potentially important technologically as electron field emitters (e.g. microguns, microwave amplifiers, displays), nanoelectrodes for sensors, filter media, superhydrophobic surfaces and thermal interface materials for microelectronics. A parametric study on the growth of CN grown by glow discharge dc-PECVD is presented. In this technique, a substrate containing thin film Ni catalyst is exposed to C2H2 and NH3 gases at 700 C. Without plasma, this process is essentially thermal CVD which produces curly spaghetti-like CN as seen in Fig. 1 (a). With the plasma generated by biasing the substrate at -6OOV, we observed that the CN align vertically during growth as shown in Fig. l(b), and that the magnitude of the applied substrate bias affects the degree of alignment. The thickness of the thin film Ni catalyst was found to determine the average diameter and inversely the length of the CN. The yield and density of the CN were controlled by the use of different diffusion barrier materials under the Ni catalyst. Patterned CN growth [Fig. l(c)], with la variation in CN diameter of 4.1% and 6.3% respectively, is achieved by lithographically defining the Ni thin film prior to growth. The shape of the structures could be varied from very straight nanotube-like to conical tip-like nanofibers by increasing the ratio of C2H2 in the gas flow. Due to the plasma decomposition of C2H2, amorphous carbon (a-C) is an undesirable byproduct which could coat the substrate during CN growth. Using a combination of depth profiled Auger electron spectroscopy to study the substrate and in-situ mass spectroscopy to examine gas phase neutrals and ions, the optimal conditions for a-C free growth of CN is determined.
Teo, K. B. K.↗
Tailored emitter, low-resistivity, ion-implanted silicon solar cells
Open-circuit voltages as high as 0.645 V (AM0, 25 C) have been obtained by a new process developed for low-resistivity silicon. The process utilizes high-dose phosphorus implantation followed by furnace annealing and simultaneous oxide growth. The effect of the thermally grown oxide is a reduction of surface recombination velocity; the oxide also acts as a moderately efficient antireflection (AR) coating. Boron-doped, float-zone silicon with resistivities from 0.1 to 1.0 (omega)(cm) has been processed according to this sequence; results show that the highest open-circuit voltage is obtained with 0.1(omega)(cm) starting material. The effects of Auger recombination and bandgap narrowing caused by high doping concentrations in the n(+)junction region have been investigated by implanting phosphorus over a wide range of dose levels. The effects of emitter-phosphorus concentrations tailored to optimize electric fields in the emitter have also been investigated.
Minnucci, J. A.↗
Effect of dislocations on the open-circuit voltage, short-circuit current and efficiency of heteroepitaxial indium phosphide solar cells
Excellent radiation resistance of indium phosphide solar cells makes them a promising candidate for space power applications, but the present high cost of starting substrates may inhibit their large scale use. Thin film indium phosphide cells grown on Si or GaAs substrates have exhibited low efficiencies, because of the generation and propagation of large number of dislocations. Dislocation densities were calculated and its influence on the open circuit voltage, short circuit current, and efficiency of heteroepitaxial indium phosphide cells was studied using the PC-1D. Dislocations act as predominant recombination centers and are required to be controlled by proper transition layers and improved growth techniques. It is shown that heteroepitaxial grown cells could achieve efficiencies in excess of 18 percent AMO by controlling the number of dislocations. The effect of emitter thickness and surface recombination velocity on the cell performance parameters vs. dislocation density is also studied.
Jain, Raj K.↗
Single Spatial-Mode Room-Temperature-Operated 3.0 to 3.4 micrometer Diode Lasers
Compact, highly efficient, 3.0 to 3.4 m light emitters are in demand for spectroscopic analysis and identification of chemical substances (including methane and formaldehyde), infrared countermeasures technologies, and development of advanced infrared scene projectors. The need for these light emitters can be currently addressed either by bulky solid-state light emitters with limited power conversion efficiency, or cooled Interband Cascade (IC) semiconductor lasers. Researchers here have developed a breakthrough approach to fabrication of diode mid-IR lasers that have several advantages over IC lasers used for the Mars 2009 mission. This breakthrough is due to a novel design utilizing the strain-engineered quantum-well (QW) active region and quinternary barriers, and due to optimization of device material composition and growth conditions (growth temperatures and rates). However, in their present form, these GaSb-based laser diodes cannot be directly used as a part of sensor systems. The device spectrum is too broad to perform spectroscopic analysis of gas species, and operating currents and voltages are too high. In the current work, the emitters were fabricated as narrow-ridge waveguide index-guided lasers rather than broad stripe-gain guided multimode Fabry-Perot (FP) lasers as was done previously. These narrow-ridge waveguide mid-IR lasers exhibit much lower power consumptions, and can operate in a single spatial mode that is necessary for demonstration of single-mode distributed feedback (DBF) devices for spectroscopic applications. These lasers will enable a new generation of compact, tunable diode laser spectrometers with lower power consumption, reduced complexity, and significantly reduced development costs. These lasers can be used for the detection of HCN, C2H2, methane, and ethane.
Frez, Clifford F.↗
Lyman-Alpha Comes of Age
The Lyman-alpha (Lyα) line is the strongest recombination line of hydrogen, which constitutes the dominant share of normal matter in the Universe. Fifty-one years ago, it was predicted that Lyα emission should appear prominently in the spectra of young primordial galaxies. For the next 30 years, this prediction was tested by many surveys, but none found the predicted galaxies at the predicted luminosities. The blame for these non-detections was squarely cast on the resonant nature of the Lyα line, which requires Lyα photons to scatter off many hydrogen atoms before escaping from a galaxy. This can hugely increase the path that they traverse, and consequently also the probability that they will be absorbed by dust. This remained the dominant explanation of the missing high-redshift lines for decades, despite some dissenting opinions about the effect of dust. The spectra of nearby galaxies from the International Ultraviolet Explorer are inconclusive about what allows galaxies to be Lyα emitters. The ‘missing’ lines were finally detected 20 years ago, at flux levels much below the original predictions - a difference that we understand to be predominantly due to the hierarchical growth of galaxies, such that star-forming objects at high redshift are much less massive than anticipated in the original prediction. The discovery and study of Lyα galaxies has blossomed into an invaluable method for understanding the youngest stages of galaxy formation, the circumgalactic medium, and ultimately the epoch of reionization. The high equivalent widths of Lyα galaxies from the earliest high-redshift surveys show that they are low-mass galaxies dominated by young stellar populations. The Sakura CLAW workshop (which used the Twitter hashtag #SakuraCLAW) gathered more than 110 participants (Fig. 1) who showcased progress that pushed the frontiers of Lyα galaxy science in sample size, sensitivity, redshifts and physical understanding..
Malhotra, Sangeeta↗