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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

Study of electronic properties in proton- and electron-irradiated GaAlAs and GaAs solar cell materials

Diagnostical measurement techniques such as dark I-V, C-V, the thermally insulated capacitance, and the deep level transient spectroscopy methods were employed to study defect properties in the proton-irradiated n-GaAs materials. Defect energy levels, thermal emission rates, and capture cross sections of electrons as well as trap densities were deduced from these measurements and the results are presented. Correlations between the measured defect parameters and the dark I-V characteristics of the n-GaAs Schottky barrier diodes are also discussed. Defect energy levels (i.e., electron traps) determined are also compared with published data in order to identify their physical origins.

Li, S. S.↗
NASA NTRS1980

Opto-electronic properties of cells made from various silicon forms

Opto-electronic properties of the various silicon forms were obtained from the solar cell performance. Performance parameters included the photovoltaic characteristics, minority carrier diffusion length, spectral response and small light spot scanning. Self consistent results were obtained from the various measurement techniques, which can provide useful information on sheet quality, as a potential for low cost terrestrial applications, and areas where the sheet formation methods can be improved.

Yoo, H.↗
NASA NTRS1975

Surface structure and electronic properties of materials

A surface potential model is developed to explain dopant effects on chemical vapor deposition. Auger analysis of the interaction between allotropic forms of carbon and silicon films has shown Si-C formation for all forms by glassy carbon. LEED intensity measurements have been used to determine the mean square displacement of surface atoms of silicon single crystals, and electron loss spectroscopy has shown the effect of structure and impurities on surface states located within the band gap. A thin film of Al has been used to enhance film crystallinity at low temperature.

Siekhaus, W. J.↗
NASA NTRS1982

Microdistribution of oxygen in silicon and its effects on electronic properties

The effects of interstitial oxygen on the electrical characteristics of Czochralski-grown silicon crystals were investigated for the first time on a microscale. It was found that the generation of thermal donors is not a direct function of the oxygen concentration. It was further found that the minority carrier life-time decreases with increasing oxygen concentration, on a microscale in as-grown crystals. It was thus shown, again for the first time, that oxygen in as grown crystals is not electronically inert as generally believed. Preannealing at 1200 C commonly employed in device fabrication, was found to suppress the donor generation at 450 C and to decrease the deep level concentrations.

Gatos, H. C.↗
NASA NTRS1979

Electronic properties of PbMo6S8 and CuxMo6S8

Normal-state properties of sputtered, evaporated, and sintered PbMo6S8 and CuxMo6S8 (where x is between 1.6 and 2.5) samples are reported. These include the temperature dependence of resistivity, magnetoresistance, and Hall effect. When combined with superconducting properties (measured on the same samples) and theory, a number of Fermi-surface and superconducting parameters are derived. Fits to the temperature dependence of the resistivity are compared with similar fits for A-15 structure superconductors.

Woollam, J. A.↗
NASA NTRS1981

Electronic properties of deep-level defects in proton irradiated AlGaAs-GaAs solar cells

Deep level transient spectroscopy and capacitance voltage techniques as well as analysis of the forward current voltage (I-V) characteristics and SEM-EIC data were carried out for proton irradiated GaAs solar cells over a wide range of proton energies and proton fluences. Defect and recombination parameters such as defect energy levels and density, carrier capture cross sections and lifetimes as well as diffusion lengths in the undoped n-GaAs LPE layers were determined. Good correlation between these defect parameters and solar cell performance parameters was obtained for GaAs solar cells irradiated by 200 and 290 KeV protons. It was found that 200 to 290 KeV protons will produce the most defects and damages to the GaAs solar cell structure used. The influence of the low temperature (200 to 400 C) periodic thermal annealing on the deep level defects and the performance of the 200 KeV proton irradiated cells is discussed.

Li, S. S.↗
NASA NTRS1977

Mechanical properties and the electronic structure of transition of metal alloys

This interdiscipline research program was undertaken in an effort to investigate the relationship between the mechanical strength of Mo based alloys with their electronic structure. Electronic properties of these alloys were examined through optical studies, and the classical solid solution strengthening mechanisms were considered, based on size and molecular differences to determine if these mechanisms could explain the hardness data.

Arsenault, R. J.↗
NASA NTRS1972

Parametric fit to electron transport properties

Experimental data acquired over the past few years were gathered, and parametric fits made to these data. The following properties of electron transport were represented by simple functions of atomic number and energy: transmitted electron number, transmitted electron spectra, range, backscatter coefficient, angular distribution, energy deposition, bremsstrahlung intensity and energy spectra, and bremsstrahlung angular distribution and photon attenuation. The formulas cover the energy ranges of interest in space shielding problems (0.1 to 10.0 MeV). Procedures for using these formulas in practical situations are suggested.

Lonergan, J. A.↗
NASA NTRS1977

Results of literature search on dielectric properties and electron interaction phenomena related to spacecraft charging

The objective of the literature search was to determine the required material properties and electron interaction parameters needed for modeling charge buildup and breakdown in insulators. A brief overview of the results of the literature search is given. A partial list of the references covered is included in a bibliography. Although inorganic insulators were also considered in the search, coverage is limited to the organics, primarily Kapton and Teflon.

Wall, J. A.↗
NASA NTRS1975

Study on processing immiscible materials in zero gravity

An experimental investigation was conducted to evaluate mixing immiscible metal combinations under several process conditions. Under one-gravity, these included thermal processing, thermal plus electromagnetic mixing, and thermal plus acoustic mixing. The same process methods were applied during free fall on the MSFC drop tower facility. The design is included of drop tower apparatus to provide the electromagnetic and acoustic mixing equipment, and a thermal model was prepared to design the specimen and cooling procedure. Materials systems studied were Ca-La, Cd-Ga and Al-Bi; evaluation of the processed samples included the morphology and electronic property measurements. The morphology was developed using optical and scanning electron microscopy and microprobe analyses. Electronic property characterization of the superconducting transition temperatures were made using an impedance change-tuned coil method.

Reger, J. L.↗
NASA NTRS1977

Secondary-electron-emission properties of conducting surfaces with application to multistage depressed collectors for microwave amplifiers

To improve the efficiency of high power microwave tubes, low secondary electron yield electrode surface for use in depressed collectors are needed. The secondary emission characteristics of a number of materials were investigated. The materials studied were beryllium, carbon (soot and pyrolytic graphite), copper, titanium carbide, and tantalum. Both total secondary yield delta and relative reflected primary yield were measured. These measurements were made in conjunction with Auger spectroscopy so that the secondary emission characteristics could be determined as a function of surface contamination or purity. The results show that low atomic weight elements, such as beryllium and carbon, have the lowest reflected primary yield and that roughening the surface of an electrode can markedly decrease secondary yield both for delta and reflected primaries. All factors considered, a roughened pyrolytic graphite surface showed the greatest potential for use as an electrode surface in depressed collectors.

Forman, R.↗