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Spin state is found to determine the mechanism and active site of catalytic hydrogenation on metal cation catalysts.
P super n electron configuration for systems where spin-free Hamiltonian is applicable
The flammability requirements of the various manned space programs have required development of electronic configurations that would eliminate any flammability hazard to crews or missions. Initial test and development efforts were directed at the development of nonflammable or self-exsinguishing materials. It was soon realized that a more relevant approach in eliminating flammability hazards was to consider materials as to their application and configuration. Design concepts for electronic black boxes and modules were tested in oxygen enriched atmospheres, and it was found that various types of sealed configurations would generally eliminate any flammability hazard. The type of configuration and its construction was found to be of more importance in the elimination of flammability hazards in electronic configurations than the types of materials utilized in them. The design concepts developed for fire hazard free electronic configurations for use in manned space programs of electronic configurations for use in manned space programs are applicable for the design of electronic hardware for any use or environment.
Diatomic UO has more than 48 bound states within 10000 cm -1 of the ground state. This electronic state congestion has been attributed to interleaved states from the electronic configurations U 2+ ($5f^37s$)O 2- and U 2+ ($5f^27s^2$)O 2- , respectively. Ligand field theory predicts that each electronic configuration will exhibit states with distinguishable, characteristic vibrational and rotational constants. However, vibronic state mixing modifies the observed vibration–rotation constants, leading to uncertainty in the configurational assignments. The permanent electric dipole moment ($μ_e$) of an electronic state should also manifest a value that is characteristic of the parent electronic configuration. $μ_e$ and other electrostatic and magnetostatic properties should be less influenced by the vibronic state mixing, providing more robust indicators for configurational assignments. In the present study, we have measured the $μ_e$ values for four electronic states of UO. Here, the results clearly demonstrate that the ground state (X(1)4) and the first electronically excited state ((2)4) are derived from the U 2+ ($5f^37s$)O 2– and U 2+ ($5f^27s^2$)O 2– configurations, respectively.
Physical properties of materials are mainly determined by valence electron configurations, where different valence shells would induce divergent phenomena. In compounds containing Sc 2+ , 3d electron occupancy is expected, same as other transition metal atoms like Ti 3+ . But this situation still awaits experimental verification. In this work, we selected ScS to measure the valence electron density and orbital population of Sc2+ through delicate quantitative convergent-beam electron diffraction. Though the [Ar]3d 1 configuration is confirmed in ionic Sc 2+ , the unintuitive occupation of 4s orbital is concluded with the absence of 3d orbital features around Sc-atom sites and nearly bare population of t2g orbital. It should be the first time to report this special electron configuration in a transition metal compound, in which 4s rather than 3d orbital is preferred. Our findings reveal the distinct behavior of Sc, and probable ways to modulate material properties by controlling electron orbitals.
1T-MoS 2 has become an ideal anode for sodium-ion batteries (SIBs). However, the metastable feature of 1T-MoS 2 makes it difficult to directly synthesize under normal conditions. In addition, it easily transforms into 2H phase via restacking, resulting in inferior electrochemical performance. Here, the electron configuration of Mo 4d orbitals is modulated and the stable 1T-MoS 2 is constructed by nickel (Ni) introduction (1T-Ni-MoS 2 ). The original electron configuration of Mo 4d orbitals is changed via the electron injection by Ni, which triggers the phase transition from 2H to 1T phase, thus improving the electrical conductivity and accelerating the redox kinetics of the material. Consequently, 1T-Ni-MoS 2 exhibits superior rate capability (266.8 mAh g -1 at 10 A g -1 ) and excellent cycle life (358.7 mAh g -1 at 1 A g -1 after 350 cycles). In addition, the assembled Na 3 V 2 (PO 4 ) 3 /C||1T-Ni-MoS 2 full cells deliver excellent electrochemical properties and show great prospects in energy storage devices.
Atomic polarizabilities play an important role in the development of force fields for molecular simulations, as well as for the development of qualitative concepts of atomic and molecular behavior. Coupled cluster theory at the coupled cluster singles doubles triples level with very large correlation-consistent basis sets with extended diffuse functions has been used to predict the polarizabilities of the atomic neutrals, mono-cations and mono-anions with a noble gas configuration. Additional corrections for scalar relativistic and spin–orbit effects were also included for the electron configurations of Kr, Xe, and Rn. The results are in excellent agreement with experiment or with other high level calculations where available. The current results for most of these species represent the best available values for the polarizabilities. The results show that the polarizability of H - is very difficult to calculate without extremely diffuse functions. The polarizability of H - is the largest value, 34.05 Å 3 , calculated for all species in the current study. The polarizabilities of the remaining halogen anions are also the best available values. The polarizabilities of the halogen anions (excluding F - ) and H - have a linear correlation with the electron affinity of the neutral atom. Spin– orbit effects, even for closed shell species, cannot be ignored for quantitative accuracy, and the inclusion of spin–orbit effects for Fr + , Rn, and At - increases the polarizability by 4%, 6%, and 15%, respectively.
The goal of this lecture is to cover the basics of atomic electrons: Definitions of shells, subshells, and orbitals; Max number of electrons per subshell; Order of filling shells; The Periodic Table and electron configuration; and Covalent and Ionic Bonding.
Although biological iron-sulfur (Fe–S) clusters perform some of the most difficult redox reactions in Nature, they are thought to be composed exclusively of Fe 2+ and Fe 3+ ions, as well as mixed-valent pairs with average oxidation states of Fe 2.5+ . We herein show that Fe–S clusters formally composed of these valences can access a wider range of electronic configurations—in particular, those featuring low-valent Fe 1+ centers. We demonstrate that CO binding to a synthetic [Fe 4 S 4 ] o cluster supported by N-heterocyclic carbene ligands induces generation of Fe 1+ centers via intracluster electron transfer, wherein a neighboring pair of Fe 2+ sites reduces the CO-bound site to a low-valent Fe 1+ state. Similarly, CO binding to an [Fe 4 S 4 ] + cluster induces electron delocalization with a neighboring Fe site to form a mixed-valent Fe 1.5+ Fe 2.5+ pair in which the CO-bound site adopts partial low-valent character. Furthermore, these low-valent configurations engender remarkable C–O bond activation without having to traverse highly negative and physiologically inaccessible [Fe 4 S 4 ] o /[Fe 4 S 4 ] – redox couples.
The Fe–N–C material represents an attractive oxygen reduction reaction electrocatalyst, and the FeN 4 moiety has been identified as a very competitive catalytic active site. Fine tuning of the coordination structure of FeN 4 has an essential impact on the catalytic performance. Herein, we construct a sulfur‐modified Fe–N–C catalyst with controllable local coordination environment, where the Fe is coordinated with four in‐plane N and an axial external S. The external S atom affects not only the electron distribution but also the spin state of Fe in the FeN 4 active site. The appearance of higher valence states and spin states for Fe demonstrates the increase in unpaired electrons. With the above characteristics, the adsorption and desorption of the reactants at FeN 4 active sites are optimized, thus promoting the oxygen reduction reaction activity. This work explores the key point in electronic configuration and coordination environment tuning of FeN 4 through S doping and provides new insight into the construction of M–N–C‐based oxygen reduction reaction catalysts.
Electronic responses of glasses under extreme pressures differ from those of crystalline analogs. Their distinct electronic environments are found in network formers with well-defined, covalent-bonded coordination environments (e.g., [4] Si and [4] Al) and in network modifiers with more disordered, ionic-bonded configurations (e.g., [5,6,7] Ca). Deciphering the evolution of the bonding environment of network modifier cations upon compression provides atomic insights into the pressure-driven hardening and transport properties of glasses. Despite the importance, in contrast to extensive efforts to uncover how network formers behave under pressure, considerable structural disorder around network modifiers makes it challenging to probe their electronic bonding environments under compression. Our understanding of the evolution of network modifiers above megabars is currently absent. Here, we report a discovery of highly densified electronic configurations of network modifier Ca in aluminate glass under extreme compression via the first inelastic X-ray scattering at the Ca L-edge up to 140 GPa. As evidenced by the prominent pressure-driven increases in electronic dispersion and delocalization, densified calcium environments are characterized by a decreased average Ca–O distance, the formation of highly coordinated calcium, a broader distribution of topological variables, and a greater distortion of Ca polyhedra above megabars. The spectral features for the Ca environments reveal significant electronic and bonding modifications, including pressure-driven increases in the ligand field interaction, the covalence characteristic of the Ca–O bond, and the electron–hole Coulomb interaction. These densification paths identify the electronic adaptation of network modifiers above megabars, shedding light on the origins of enhanced electron transport and the electron-storing capacity of glasses under pressure.
Picosecond optical and X-ray absorption spectroscopies with time-dependent density functional theory revealed the reaction pathways, electronic and structural conformations of Ir–Co hydrogen evolution photocatalysts. The dyad bearing 2-phenylpyridine ancillary ligands produced more photoreduced Co(II) than its 2-phenylisoquinoline analogue. These findings are important for designs of earth-abundant photosensitizers for photocatalytic applications.
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This paper focuses on analog/digital electronics at low-temperatures. The experiments cover separate tests of the whole Evolvable Hardware system: the Evolutionary Processor (the DSP in the SABLE system), Xilinx Virtes II Pro FPGA evaluation board, and the Reconfigurable analog array components tested at low and high temperatures.
The need for reconfigurable electronics is driven by requirements to survive longer missions and harsher environments. It is possible to compensate for degradations in Extreme Environments (EE). EE has effect on electronics: circuits are designed to exploit device characteristics and when a certain temperature or radiation range is exceeded the circuit function gradually degrades. It is possible to employ Hardening by reconfiguration (HBR) to mitigate drifts, degradation, or damage on electronic devices in EE by using reconfigurable devices and an adaptive self-reconfiguration of circuit topology. In this manner degraded components can be salvaged, and completely damaged components can be bypassed. The challenge of conventional design is replaced with that of designing a recover process that automatically performs the (re) design in place of the designer. The objective of testing a Digital Signal Processor (DSP) under the extreme temperatures was to determine the lowest temperature at which the DAP can operate. The objective of testing a Xilinx VirtexII Pro FPGA board was to initially find our whether the evaluation board and the FPGA would survive and continue at temperature ranges from -180 C, and 120 C. The Virtex II functioned correctly at the temperatures tested. The next test was done on the GM-C filter building block using the same temperature range as the Virtex II. The current lower and upper limits were shown to be reduced as the temperature gets lower. The device function can be recovered by increasing the Vb from .08V to .85V. The negative and positive saturation voltages increases as the temperature gets higher. The function of the device can be recovered by decreasing the Vb from .8V to around .75V. The next test was performed to test the recovery of the GmC low pass filter through Vb in a filter circuit. The test indicate that bias voltage control adjustment is an efficient mechanism for circuit recovery at extreme temperatures.
Atomic Russell-Saunders coupling states classification from equivalent electrons configurations, using Young diagrams method
Recently, there has been a lot of interest in topological insulators (TIs), being electronic materials, which are insulating in their bulk but with the gapless exotic metallic state on their surface. The surface states observed in such materials behave as a perfect conductor thereby making them more suited for several cutting-edge technological applications such as spintronic devices. Here, we report the synthesis and structural characterization of the Zintl phases AIn 2 As 2 (A = Ca, Sr, Ba), which could become a new class of TIs. Crystal structure elucidation by single-crystal X-ray diffraction reveals that CaIn 2 As 2 and SrIn 2 As 2 are isostructural and crystallize in the EuIn 2 P 2 structure type (space group P6 3 /mmc, no. 194, Z = 2) with unit cell parameters a = 4.1482(6) Å, c = 17.726(4) Å; and a = 4.2222(6) Å, c = 18.110(3) Å, respectively. Their hexagonal structure is made up of alternating [In 2 As 2 ] 2– layers separated by slabs of A 2+ cations. BaIn 2 As 2 on the other hand crystallizes in the monoclinic EuGa 2 P 2 structure type (space group P2/m, no. 10, Z = 4) with unit cell parameters a = 10.2746(11) Å, b = 4.3005(5) Å, c = 13.3317(14) Å and β = 95.569(2)°. This structure is also layered, and it is made up of different type of polyanionic [In 2 As 2 ] 2– units and Ba 2+ cations. The valence electron count for all three compounds adheres to the Zintl-Klemm formalism, and all elements achieve closed-shell electronic configurations. Bulk electronic structure calculations indicate the opening of a bandgap E g ~ 0.03 eV (CaIn 2 As 2 and Sr 2 In 2 As 2 ), and E g ~0.21 eV (BaIn 2 As 2 ) in the absence of strain and spin–orbit coupling (SOC). Furthermore, these results argue in favor of the realization of a nontrivial topological insulator state under the influence of tensile strain and SOC. Preliminary transport properties on BaIn 2 As 2 are suggestive of a degenerate p-type semiconductor—a behavior which is sought after in thermoelectric (TE) materials. Since both TIs and excellent TE materials are known to favor the same material properties such as narrow bandgap, heavy elements, and strong SOC, these three Zintl phases are also projected as candidates TE materials.