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Atomic electron energies including relativistic effects and quantum electrodynamic corrections

Atomic electron energies have been calculated relativistically. Hartree-Fock-Slater wave functions served as zeroth-order eigenfunctions to compute the expectation of the total Hamiltonian. A first order correction to the local approximation was thus included. Quantum-electrodynamic corrections were made. For all orbitals in all atoms with 2 less than or equal to Z less than or equal to 106, the following quantities are listed: total energies, electron kinetic energies, electron-nucleus potential energies, electron-electron potential energies consisting of electrostatic and Breit interaction (magnetic and retardation) terms, and vacuum polarization energies. These results will serve for detailed comparison of calculations based on other approaches. The magnitude of quantum electrodynamic corrections is exhibited quantitatively for each state.

Aoyagi, M.↗

Neutral-atom electron binding energies from relaxed-orbital relativistic Hartree-Fock-Slater calculations for Z between 2 and 106

Electron binding energies in neutral atoms have been calculated relativistically, with the requirement of complete relaxation. Hartree-Fock-Slater wave functions served as zeroth-order eigenfunctions to compute the expectation of the total Hamiltonian. A first-order correction to the local approximation was thus included. Quantum-electrodynamic corrections were made. For all elements with atomic numbers ranging from 2 to 106, the following quantities are listed: total energies, electron kinetic energies, electron-nucleus potential energies, electron-electron potential energies consisting of electrostatic and Breit interaction (magnetic and retardation) terms, and vacuum polarization energies. Binding energies including relaxation are listed for all electrons in all atoms over the indicated range of atomic numbers. A self-energy correction is included for the 1s, 2s, and 2p(1/2) levels. Results for selected atoms are compared with energies calculated by other methods and with experimental values.

Huang, K.-N.↗

Pulsed, high-current, in-line reversal electron attachment detector

A new, pulsed, high-current, in-line reversal electron attachment ionizer/detector is described. The ionizer is capable of delivering a beam of electrons into an electrostatic mirror field to form a planar wall of electrons having zero kinetic energy. Electron attachment to a molecular target at the reversal point produces either parent or fragment negative ions through a zero-energy (s-wave) state. The atomic or molecular ion is pulsed out of the attachment region approximately 2 microsec after the electrons are pulsed off, and focused onto the entrance plane of a quadrupole mass analyzer. The sensitivity of the apparatus is preliminarily assessed, and its higher-energy behavior with regard to molecular attachment and ionization is described.

Bernius, Mark T.↗

Microwave Driven Magnetic Plasma Accelerator Studies (CYCLOPS)

A microwave-driven cyclotron resonance plasma acceleration device was investigated using argon, krypton, xenon, and mercury as propellants. Limited ranges of propellant flow rate, input power, and magnetic field strength were used. Over-all efficiencies (including the 65% efficiency of the input polarizer) less than 10% were obtained for specific impulse values between 500 and 1500 sec. Power transfer efficiencies, however, approached 100% of the input power available in the right-hand component of the incident circularly polarized radiation. Beam diagnostics using Langmuir probes, cold gas mapping, r-f mapping and ion energy analyses were performed in conjunction with an engine operating in a pulsed mode. Measurements of transverse electron energies at the position of cyclotron resonant absorption yielded energy values more than an order of magnitude lower than anticipated. The measured electron energies were, however, consistent with the low values of average ion energy measured by retarding potential techniques. The low values of average ion energy were also consistent with the measured thrust values. It is hypothesized that ionization and radiation limit the electron kinetic energy to low-values thus limiting the energy which is finally transferred to the ion. Thermalization by electron-electron collision was also identified as an additional loss mechanism. The use of light alkali metals, which have relatively few low lying energy levels to excite, with the input power to mass ratio selected so as to limit the electron energies to less than the second ionization potential, is suggested. It is concluded, however, that the over-all efficiency for such propellants would be less than 40 per cent.

CYCLOPS PLASMA ACCELERATOR↗

Probe and radar electron temperatures in an isotropic nonequilibrium plasma.

Electron temperatures measured by electrostatic probes and radar backscatter are distinct physical quantities, the temperature from each technique determined from a different moment of the electron-distribution function. Numerical inequality of temperatures results from a non-Maxwellian electron-distribution function or, equivalently, from a nonequilibrium electron plasma. Probe and backscatter electron temperatures are studied for low- and high-energy (isotropic) distortions of the distribution function. The nonequilibrium plasma generally produces higher probe than backscatter temperatures; however, the temperature difference is small for distortions due to realistic photoelectron populations. If the ionosphere is in a highly nonequilibrium state, probe and backscatter temperatures would differ from the temperature characterizing the average electron kinetic energy, and a single temperature applicable to a variety of physical processes would no longer exist.

Hoegy, W. R.↗

Disabling CNT Electronic Devices by Use of Electron Beams

Bombardment with tightly focused electron beams has been suggested as a means of electrically disabling selected individual carbon-nanotubes (CNTs) in electronic devices. Evidence in support of the suggestion was obtained in an experiment in which a CNT field-effect transistor was disabled (see figure) by focusing a 1-keV electron beam on a CNT that served as the active channel of a field-effect transistor (FET). Such bombardment could be useful in the manufacture of nonvolatile-memory circuits containing CNT FETs. Ultimately, in order to obtain the best electronic performances in CNT FETs and other electronic devices, it will be necessary to fabricate the devices such that each one contains only a single CNT as an active element. At present, this is difficult because there is no way to grow a single CNT at a specific location and with a specific orientation. Instead, the common practice is to build CNTs into electronic devices by relying on spatial distribution to bridge contacts. This practice results in some devices containing no CNTs and some devices containing more than one CNT. Thus, CNT FETs have statistically distributed electronic characteristics (including switching voltages, gains, and mixtures of metallic and semiconducting CNTs). According to the suggestion, by using a 1-keV electron beam (e.g., a beam from a scanning electron microscope), a particular nanotube could be rendered electrically dysfunctional. This procedure could be repeated as many times as necessary on different CNTs in a device until all of the excess CNTs in the device had been disabled, leaving only one CNT as an active element (e.g., as FET channel). The physical mechanism through which a CNT becomes electrically disabled is not yet understood. On one hand, data in the literature show that electron kinetic energy >86 keV is needed to cause displacement damage in a CNT. On the other hand, inasmuch as a 1-keV beam focused on a small spot (typically a few tens of nanometers wide) deposits a significant amount of energy in a small volume, the energy density may suffice to thermally induce structural and/or electronic changes that disable the CNT. Research may be warranted to investigate this effect in detail.

Petkov, Mihail↗

Laser/Plasma/Chemical-Vapor Deposition Of Diamond

Proposed process for deposition of diamond films includes combination of plasma induced in hydrocarbon feed gas by microwave radiation and irradiation of plasma and substrate by lasers. Deposition of graphite suppressed. Reaction chamber irradiated at wavelength favoring polymerization of CH2 radical into powders filtered out of gas. CH3 radicals, having desired sp3 configuration, remains in gas to serve as precursors for deposition. Feed gas selected to favor formation of CH3 radicals; candidates include CH4, C2H4, C2H2, and C2H6. Plasma produced by applying sufficient power at frequency of 2.45 GHz and adjusting density of gas to obtain electron kinetic energies around 100 eV in low-pressure, low-temperature regime.

Hsu, George C.↗

Segmented Ge detector rejection of internal beta activity produced by neutron irradiation

Future Ge spectrometers flown in space to observe cosmic gamma-ray sources will incorporate segmented detectors to reduce the background from radioactivity produced by energetic particle reactions. To demonstrate the effectiveness of a segmented Ge detector in rejecting background events due to the beta decay of internal radioactivity, a laboratory experiment has been carried out in which radioactivity was produced in the detector by neutron irradiation. A Cf-252 source of neutrons was used to produce, by neutron capture on Ge-74 (36.5 percent of natural Ge) in the detector itself, Ge-75 (t sub 1/2 = 82.78 min), which decays by beta emission with a maximum electron kinetic energy of 1188 keV. By requiring that an ionizing event deposit energy in two or more of the five segments of the detector, each about 1-cm thick, the beta particles, which have a range of about 1-mm, are rejected, while most external gamma rays incident on the detector are counted. Analysis of this experiment indicates that over 85 percent of the beta events from the decay of Ge-75 are rejected, which is in good agreement with Monte Carlo calculations.

Varnell, L. S.↗

Measuring Traces Of Oxygen By Resonant Electron Attachment

Method of detecting trace amounts of oxygen based on dissociative attachment of electrons to oxygen molecules followed by measurement of resulting flux of negative oxygen ions in mass spectrometer. High sensitivity achieved in method by exploiting resonance in dissociative attachment of electrons to oxygen molecules: electron-attachment cross section rises to high peak at incident electron kinetic energy of 6.2 eV. Relative concentrations below 1 ppb detected. Devised to increase sensitivity of detection of oxygen in processing chambers in which oxygen regarded as contaminant; for example, chambers used in making semiconductor devices and in growing high-purity crystals.

Man, Kin Fung↗

Curing Composite Materials Using Lower-Energy Electron Beams

In an improved method of fabricating composite-material structures by laying up prepreg tapes (tapes of fiber reinforcement impregnated by uncured matrix materials) and then curing them, one cures the layups by use of beams of electrons having kinetic energies in the range of 200 to 300 keV. In contrast, in a prior method, one used electron beams characterized by kinetic energies up to 20 MeV. The improved method was first suggested by an Italian group in 1993, but had not been demonstrated until recently. With respect to both the prior method and the present improved method, the impetus for the use of electron- beam curing is a desire to avoid the high costs of autoclaves large enough to effect thermal curing of large composite-material structures. Unfortunately, in the prior method, the advantages of electron-beam curing are offset by the need for special walls and ceilings on curing chambers to shield personnel from x rays generated by impacts of energetic electrons. These shields must be thick [typically 2 to 3 ft (about 0.6 to 0.9 m) if made of concrete] and are therefore expensive. They also make it difficult to bring large structures into and out of the curing chambers. Currently, all major companies that fabricate composite-material spacecraft and aircraft structures form their layups by use of automated tape placement (ATP) machines. In the present improved method, an electron-beam gun is attached to an ATP head and used to irradiate the tape as it is pressed onto the workpiece. The electron kinetic energy between 200 and 300 keV is sufficient for penetration of the ply being laid plus one or two of the plies underneath it. Provided that the electron-beam gun is properly positioned, it is possible to administer the required electron dose and, at the same time, to protect personnel with less shielding than is needed in the prior method. Adequate shielding can be provided by concrete walls 6 ft (approximately equal to 1.8 m) high and 16 in. (approximately equal to 41 cm) thick, without a ceiling. The success of the present method depends on the use of a cationic epoxy as the matrix material in the prepreg tape, heating the prepreg tape to a temperature of 50 C immediately prior to layup, and exposing the workpiece to an electron-beam dose of approximately 2 Mrad. Experiments have shown that structures fabricated by the present method have the same mechanical properties as those of nominally identical structures fabricated by the prior method with electron beams of 3 to 4 MeV.

Byrne, Catherine A.↗

The kinetic energy spectrum of protons produced by the dissociative ionization of H2 by electron impact

The kinetic energy spectra of protons resulting from the dissociative ionization of H2 by electron impact have been measured for electron impact energies from threshold (approximately 17 eV) to 160 eV at 90 deg and 30 deg detection angles, using a crossed-beam experimental arrangement. To check reliability, two separate proton energy analysis methods have been employed, i.e., a time-of-flight proton energy analysis and an electrostatic hemispherical energy analyzer. The present results are compared with previous measurements.

Khakoo, M. A.↗

High temperature electronic excitation and ionization rates in gases

The relaxation times for electronic excitation due to electron bombardment of atoms was found to be quite short, so that electron kinetic temperature (T sub e) and the electron excitation temperature (T asterisk) should equilibrate quickly whenever electrons are present. However, once equilibrium has been achieved, further energy to the excited electronic states and to the kinetic energy of free electrons must be fed in by collisions with heavy particles that cause vibrational and electronic state transitions. The rate coefficients for excitation of electronic states produced by heavy particle collision have not been well known. However, a relatively simple semi-classical theory has been developed here which is analytic up to the final integration over a Boltzmann distribution of collision energies; this integral can then be evaluated numerically by quadrature. Once the rate coefficients have been determined, the relaxation of electronic excitation energy can be evaluated and compared with the relaxation rates of vibrational excitation. Then the relative importance of these two factors, electronic excitation and vibrational excitation by heavy particle collision, on the transfer of energy to free electron motion, can be assessed.

Hansen, Frederick↗

Thermophysical properties of simple liquid metals: A brief review of theory

In this paper, we review the current theory of the thermophysical properties of simple liquid metals. The emphasis is on thermodynamic properties, but we also briefly discuss the nonequilibrium properties of liquid metals. We begin by defining a 'simple liquid metal' as one in which the valence electrons interact only weakly with the ionic cores, so that the interaction can be treated by perturbation theory. We then write down the equilibrium Hamiltonian of a liquid metal as a sum of five terms: the bare ion-ion interaction, the electron-electron interaction, the bare electron-ion interaction, and the kinetic energies of electrons and ions. Since the electron-ion interaction can be treated by perturbation, the electronic part contributes in two ways to the Helmholtz free energy: it gives a density-dependent term which is independent of the arrangement of ions, and it acts to screen the ion-ion interaction, giving rise to effective ion-ion pair potentials which are density-dependent, in general. After sketching the form of a typical pair potential, we briefly enumerate some methods for calculating the ionic distribution function and hence the Helmholtz free energy of the liquid: monte Carlo simulations, molecular dynamics simulations, and thermodynamic perturbation theory. The final result is a general expression for the Helmholtz free energy of the liquid metal. It can be used to calculate a wide range of thermodynamic properties of simple metal liquids, which we enumerate. They include not only a range of thermodynamic coefficients of both metals and alloys, but also many aspects of the phase diagram, including freezing curves of pure elements and phase diagrams of liquid alloys (including liquidus and solidus curves). We briefly mention some key discoveries resulting from previous applications of this method, and point out that the same methods work for other materials not normally considered to be liquid metals (such as colloidal suspensions, in which the suspended microspheres behave like ions screened by the salt solution in which they are suspended). We conclude with a brief discussion of some non-equilibrium (i.e., transport) properties which can be treated by an extension of these methods. These include electrical resistivity, thermal conductivity, viscosity, atomic self-diffusion coefficients, concentration diffusion coefficients in alloys, surface tension and thermal emissivity. Finally, we briefly mention two methods by which the theory might be extended to non-simple liquid metals: these are empirical techniques (i.e., empirical two- and three-body potentials), and numerical many-body approaches. Both may be potentially applicable to extremely complex systems, such as nonstoichiometric liquid semiconductor alloys.

Stroud, David↗