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Structural stability of MoS 2 nanosheets were in-situ investigated from selected area electron diffraction. The nano-sheets were stable at low-energy electron irradiation (80 keV) while degraded under high-energy electron irradiation (120 keV).
Electron-irradiation induced creep rates in amorphous alloys, a-SiO2, Fe79B16Si5, Cu60Ta40, and Cu50Ti50, were measured at room temperature using a miniaturized beam-bending apparatus within a transmission electron microscope operated at 200 keV. The creep rates of these amorphous samples increased nearly linearly with both e-beam current density and applied stress, while a reference crystalline (c-)SiO2 sample failed to creep under the same conditions. The irradiation induced creep compliance of a-SiO2 was ~ 15 times larger than that of Fe79B16Si5 and over 1,000 times larger than that of the two Cu alloys. Molecular dynamics computer simulations were employed to simulate electron irradiation induced creep using interatomic potentials representing amorphous Cu75Zr25, Ni80P20, and SiO2 as model systems. The irradiation induced creep compliances calculated for Cu75Zr25 during 200 keV electron irradiation provided good quantitative agreement with the two Cu-based alloys, but that for a-SiO2 was ~ 180 times too small. These results indicate that unlike neutron or ion-beam induced creep in a-SiO2, creep under electron irradiation is dominated by the effects of ionization owing largely to the far higher ratio of electronic stopping to nuclear stopping for electrons than for ions.
Controlled point-like disorder induced by low temperature 2.5 MeV electron irradiation was used to probe the nature of the Verwey transition in magnetite, Fe 3 O 4 . Two large single crystals, one with optimal transition temperature, T V ≈ 121 K, and another with T V ≈ 109 K, as well as magnetite magnetosome nanocrystals harvested from the lysed cells of the marine magnetotactic vibrio Magnetovibrio blakemorei strain MV-1, T V ≈ 110 K, were examined. Temperature-dependent resistivity is consistent with the semiconductor-to-semiconductor (insulator) sharp, step-like Verwey transition from a state with a small bandgap of around 60 meV to a state with a large bandgap of about 300 meV. The irradiation causes an up-shift of the resistivity curves above the transition without transition smearing or broadening. It also causes an apparent down-shift of the resistivity maximum at high temperatures. In the lower crystal, the electron irradiation drives the transition temperature into a “forbidden” interval of T V , believed to separate the first order from the second order phase transition. Contrary to this belief, the transition itself remains sharp and hysteretic without a significant change in the hysteresis width indicating the strong 1st order character of the Verwey transition for all TV values. The separate 2nd order - looking transition is likely due to sample inhomogeneities. Here we conclude that the sudden change of the bandgap accompanied (or driven) by the monoclinic distortion and the change of magnetic anisotropy is the reason for the Verwey transition in magnetite and the effect of additional disorder is mostly in the smearing of the sharp gap edges near the Fermi level.
We have characterized an electron-irradiated Ba 1-x K x Fe 2 As 2 (x = 0.53) single-crystal using two different experimental techniques: magneto-optic measurements and microwave measurements. The crystal has been measured before as well as after the 2.5 MeV electron irradiation process. After irradiation it was annealed in a number of steps, between 90 °C and 180 °C, and measured after each annealing step. Most microwave measurements were performed by means of a copper cavity, taking advantage of the TE 011 and TM 110 modes, allowing for the determination of the London penetration depths changes δλ ab (T) and δλ c (T), ie perpendicular and parallel to the sample c-axis. Appropriate equations, based on perturbation theory, were derived to calculate the penetration depths changes δλ ab and δλ c for a rectangular prism geometry. The sample showed a full recovery of its T c , however the observed behavior of δλ c and δλ ab was not monotonic vs annealing temperature, displaying a minimum of δλ c and δλ ab at 120 °C. In conclusion, this finding was confirmed by magneto-optic measurements, where besides verifying the sample uniformity and the absence of visible defects, the lower critical field H c1 of the Ba 1-x K x Fe 2 As 2 single-crystal was obtained and the London penetration depth λab(0) was calculated.
Zirconium diboride (ZrB 2 ) is a ultra-high temperature ceramic with high melting temperature (>3000 K), super strength and hardness, good thermal conductivity, and excellent resistance to plasma erosion and chemical erosion, being widely applied in hypersonic flight, arc-electrodes, refractory materials, and plasma-facing materials in fusion reactors. Therefore, the structural stability of the material is essential for the applications. Up to now, the material was investigated under neutron irradiation and high-energy ion irradiations. It was reported that the neutron irradiation caused swelling and catastrophic cracking. High-energy ions (30 keV He + ) changed the surface morphology and caused the bright blue and brown colors on ZrB 2 surfaces between 920 K and 1120 K. The electron irradiation tolerance of the material has not been reported yet. Here we used convergent beam electron diffraction (CBED) and energy-dispersive X-ray spectroscopy (EDS) to investigate structural tolerances of ZrB 2 crystals under high-energy electrons at room temperature under vacuum. Finally, the investigation would benefit the understanding of its structural tolerance at microscales.
Room-temperature (RT) axial tensile tests were conducted in 2018 and 2021 with flat, sub-sized, dog-boned samples of non-irradiated and irradiated Inconel 718 and irradiated beryllium (Be). The sample gauge length was 7.62 mm. Tensile properties of interest are the engineering yield stress (YS), ultimate tensile stress (UTS), uniform elongation (UE) and total elongation (TE). The electron dose of the 2021 samples was ≈2 times the dose of samples tested in 2018. Relative dose rates of 0, 1 (2018), and 2 (2021) are assigned to these samples. The 2021 electron-irradiated Be samples were brittle with a low failure stress of 338±64 MPa based on two samples. The failures occurred in the gauge section. The 2018 results for electron-irradiated Be indicated a slight decrease in ductility and strength for the one electron-irradiated sample that failed in the gauge section.
The effects of 2.5-MeV electron irradiation were studied in the superconducting phase of single crystals of LaNiGa 2 , using measurements of electrical transport and radio-frequency magnetic susceptibility. The London penetration depth is found to vary exponentially with temperature, suggesting a fully gapped Fermi surface. The inferred superfluid density is close to that of a single-gap weak-coupling isotropic s – wave superconductor. Superconductivity is extremely robust against nonmagnetic point-like disorder induced by electron irradiation. Our results place strong constraints on the previously proposed triplet pairing state by requiring fine-tuned impurity scattering amplitudes and are most naturally explained by a sign-preserving, weak-coupling, and approximately momentum-independent singlet superconducting state in LaNiGa 2 , which does not break time-reversal symmetry. Finally, we discuss how our findings could be reconciled with previous measurements that indicated magnetic signatures in the superconducting phase.
Optical and electrical properties of Hf- and Zn-doped β-Ga 2 O 3 samples, which are n-type and insulating, respectively, were altered via high-energy electron irradiation at 2.5 or 0.5 MeV. The β-Ga 2 O 3 :Hf samples irradiated with 2.5 MeV electrons experienced a color change from blue to yellow and a large drop in conductivity, attributed to the creation of gallium vacancies, which compensate donors. This irradiation resulted in the absence of free carrier absorption and the presence of Cr 3+ photoluminescence (PL). PL mapping prior to irradiation revealed optically active ZnO precipitates that formed during the growth of β-Ga 2 O 3 :Zn. These precipitates have a 384 nm (3.23 eV) stacking fault emission in the core; in the outer shell of the precipitate, the PL blue-shifts to 377 nm (3.29 eV) and a broad defect band is observed. After 0.5 MeV electron irradiation, the defect band broadened and increased in intensity. The blue PL band (435 nm) of β-Ga 2 O 3 was enhanced for both Hf- and Zn-doped samples irradiated with 0.5 MeV. This enhancement is correlated with an increase in oxygen vacancies.
Low-temperature variable-energy electron irradiation was used to induce non-magnetic disorder in a single crystal of a hole-doped iron-based superconductor, Ba $1-x$ K $x$ Fe 2 As 2 , $x$ = 0.80. To avoid systematic errors, the beam energy was adjusted non-consequently for five values between 1.0 and 2.5 MeV when sample resistance was measured in situ at 22 K. For all energies, the resistivity raises linearly with the irradiation fluence suggesting the creation of uncorrelated dilute point-like disorder (confirmed by simulations). The rate of the resistivity increase peaks at energies below 1.5 MeV. Comparison with calculated partial cross-sections points to the predominant creation of defects in the iron sublattice. Simultaneously, superconducting $T_c$, measured separately between the irradiation runs, is monotonically suppressed as expected, since it depends on the total scattering rate, hence on the total cross-section, which is a monotonically increasing function of the energy. Our work experimentally confirms an often-made assumption of the dominant role of the iron sub-lattice in iron-based superconductors.
Temperature-dependent London penetration depth, λ(T), of a high quality optimally-doped YBa 2 Cu 3 O 7-δ single crystal was measured using tunnel-diode-resonator technique. Controlled artificial disorder was induced by low-temperature 20 K irradiation by 2.5 MeV electrons at two large doses of 3.8 x 10 19 and 5.3 x 10 19 electrons per cm 2 . The irradiation caused significant suppression of the superconductor's critical temperature, T c , from 94.6 K to 90.0 K, and to 78.7 K, respectively. The low-temperature behavior of λ(T) evolves from a T-linear in pristine state to a T 2 behavior after irradiation, expected for a line-nodal d-wave superconductor. However, the original theory that explained such behavior assumed a unitary limit of the scattering potential, whereas usually in normal metals and semiconductors, Born scattering is sufficient to describe the experiment. To estimate the scattering potential strength, we calculated the superfluid density, ρ s (t = T/T c ) = λ 2 (0)/λ 2 (T), varying the amount and strength of non-magnetic scattering using a self-consistent t-matrix theory. Fitting the obtained curves to a power law, ρ s = 1 - Rt n , and to a polynomial, ρ s = 1 - At - Bt 2 , and comparing the coefficients n in one set and A and B in another with the experimental values, we estimate the phase shift to be around 70 and 65°, respectively. We correlate this result with the evolution of the density of states with nonmagnetic disorder.
The dynamics and structure of the liquid and vapor interface has remained elusive for decades due to the lack of an effective tool for directly visualization beyond micrometer resolution. Here, we designed a simple liquid-cell for encapsulating the liquid state of sodium for transmission electron microscopic (TEM) observation. The real-time dynamic structure of the liquid-vapor interface was imaged and videoed by TEM on the sample of electron irradiated sodium chloride (NaCl) crystals, a well-studied sample with low melting temperature and quantum super-shells of clusters. The nanometer resolution images exhibit the fine structures of the capillary waves, composed of first-time observed three zones of structures and features, i.e. flexible nanoscale fibers, nanoparticles/clusters, and a low-pressure area that sucks the nanoparticles from the liquid to the interface. Although the phenomenons were observed based on irradiated NaCl crystals, the similarities of the phenomenons to predictions suggest our real-time ovserved dynamic structure might be useful in validating long-debated theoretical models of the liquid-vapor interface, and enhancing our knowledge in understanding the non-equilibrium thermodynamics of the liquid-vapor interface to benefit future engineering designs in microfluidics.
Carrier-transport mechanisms are studied in high-purity diamond irradiated with 6 MeV electrons in the dose range of 10 12 –10 16 cm -2 and annealed at different temperatures up to 1450°C. Lifetimes and diffusion coefficients are extracted using two pump–probe techniques based on free-carrier absorption and transient-grating principles and then correlated with the corresponding defect evolution from spectroscopic measurements. Furthermore, the neutral monovacancy is revealed as the main carrier recombination center in the as-irradiated diamond, providing bipolar carrier lifetimes of a few nanoseconds at the highest irradiation dose. Carrier-capture cross sections are reduced during annealing as vacancies aggregate into divacancies at ≤1000°C and extended vacancy clusters at 1450°C.
In-plane anisotropy of electrical resistivity was studied in samples of the hole-doped Ba 1–x K x Fe 2 As 2 in the composition range 0.21 ≤ x ≤ 0.26 where anisotropy changes sign. Low-temperature (~20 K) irradiation with relativistic 2.5 MeV electrons was used to control the level of disorder and residual resistivity of the samples. Modification of the stress-detwinning technique enabled measurements of the same samples before and after irradiation, leading to the conclusion of anisotropic character of predominantly inelastic scattering processes. Our main finding is that the resistivity anisotropy is of the same sign irrespective of residual resistivity, and remains the same in the orthorhombic C 2 phase above the reentrant tetragonal transition. Unusual T-linear dependence of the anisotropy Δρ ≡ ρ a (T) – ρ b (T) is found in pristine samples with x = 0.213 and x = 0.219 , without similar signatures in either ρ a (T) or ρ b (T). In this paper, we show that this feature can be reproduced by a phenomenological model of R. M. Fernandes et al. We speculate that onset of fluctuations of nematic order on approaching the instability towards the reentrant tetragonal phase contributes to this unusual dependence.
Abstract not provided
Electron beam irradiation near 10 MeV is suitable for wastewater treatment. The Upgraded Injector Test Facility (UITF) at Jefferson Lab is a CW superconducting linear accelerator capable of providing an electron beam of energy up to 10 MeV and up to 100 µA current. This contribution presents the beam transport simulations for a beamline to be used for the irradiation of wastewater samples at the UITF. The simulations were done using the code General Particle Tracer with the goal of obtaining an 8 MeV electron beam of radius (3-σ) of ~2.4 cm. The achieved energy spread is ~74.5 keV. The space charge effects were investigated when the bunch charge is varied to be up to 1000 times and the results showed that they do not affect the beam quality significantly.
Electron beam irradiation near 10 MeV is suitable for wastewater treatment. The Upgraded Injector Test Facility (UITF) at Jefferson Lab is a CW superconducting linear accelerator capable of providing an electron beam of energy up to 10 MeV and up to 100 µA current. This contribution presents the beam transport simulations for a beamline to be used for the irradiation of wastewater samples at the UITF. The simulations were done using the code General Particle Tracer with the goal of obtaining an 8 MeV electron beam of radius (3-σ) of ~2.4 cm. The achieved energy spread is ~74.5 keV. The space charge effects were investigated when the bunch charge is varied to be up to 1000 times and the results showed that they do not affect the beam quality significantly.
We discuss the need to understand materials exposed to overlapping extreme environments such as high temperature, radiation, or mechanical stress. When these stressors are combined there may be synergistic effects that enable unique microstructural evolution mechanisms to activate. Understanding of these mechanisms is necessary for the input and refinement of predictive models and critical for engineering of next generation materials. The basic physics and underlying mechanisms require advanced tools to be investigated. The in situ ion irradiation transmission electron microscope (I 3 TEM) is designed to explore these principles. To quantitatively probe the complex dynamic interactions in materials, careful preparation of samples and consideration of experimental design is required. Particular handling or preparation of samples can easily introduce damage or features that obfuscate the measurements. There is no one correct way to prepare a sample; however, many mistakes can be made. The most common errors and things to consider are highlighted within. The I 3 TEM has many adjustable variables and a large potential experimental space, therefore it is best to design experiments with a specific scientific question or questions in mind. Experiments have been performed on large number of sample geometries, material classes, and with many irradiation conditions. The following are a subset of examples that demonstrate unique in situ capabilities utilizing the I 3 TEM. Au nanoparticles prepared by drop casting have been used to investigate the effects of single ion strikes. Au thin films have been used in studies on the effects of multibeam irradiation on microstructure evolution. Zr films have been exposed to irradiation and mechanical tension to examine creep. Ag nanopillars were subjected to simultaneous high temperature, mechanical compression, and ion irradiation to study irradiation induced creep as well. These results impact fields including: structural materials, nuclear energy, energy storage, catalysis, and microelectronics in space environments.