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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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A coherent description of thermal radiative devices and its application on the near-field negative electroluminescent cooling

Using the transmissivity between two thermal reservoirs and the generalized Planck distributions, we describe the devices that use radiative energy transfer between thermal reservoirs in a unified formalism. In this work, four types of devices are distinguished. For power generators that use the temperature difference between reservoirs, photovoltaic (PV) and thermoradiative (TR) devices respectively use the low temperature photovoltaic cell and high-temperature thermoradiative cell to generate electricity. For active cooling, the electroluminescent (EL) cooling devices apply a forward bias voltage on the object we want to cool, whereas the negative EL cooling devices apply a reverse bias voltage to the heat sink. The relationship among these four devices is explicated. The performance of the negative EL cooling is analyzed, both in the Shockley-Queisser (blackbody spectrum and radiative recombination) framework and the near-field enhancement. The “impedance match” condition derived for PV systems is applied to the negative EL devices. One advantageous feature of the negative EL cooling is that it does not apply the voltage to the target object which we want to cool, and the near-field enhancement can apply to various target materials that support the surface resonant modes.

42 ENGINEERING↗

Multijunction Electroluminescent Cooling

We propose a multijunction configuration for an electroluminescent cooling system, incorporating multiple semiconductor layers with different band gaps. Through theoretical analysis focusing on cooling power density and coefficient of performance, we show that increasing the number of semiconductor layers results in an enhanced performance of electroluminescent cooling. We highlight the reduction of operating voltage as a pivotal factor contributing to this improvement. Furthermore, we show that the enhancement can persist in the presence of nonradiative recombination. Our work indicates the potential of multijunction configurations in advancing the capabilities of electroluminescent cooling. Published by the American Physical Society 2024

14 SOLAR ENERGY↗

Electrical properties of III-Nitride LEDs: Recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling

The current-voltage characteristic and ideality factor of III-Nitride quantum well light-emitting diodes (LEDs) grown on bulk GaN substrates are investigated. At operating temperature, these electrical properties exhibit a simple behavior. A model in which only active-region recombinations have a contribution to the LED current is found to account for experimental results. The limit of LED electrical efficiency is discussed based on the model and on thermodynamic arguments, and implications for electroluminescent cooling are examined.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Effect of interface recombination on the efficiency of intracavity double diode structures

In the past ten years, there has been significant progress in solid-state optical refrigeration, causing a renewed interest in the possibility of electroluminescent cooling (ELC) in light emitting diodes (LEDs). More recently, our work on III-As based intracavity double diode structures (DDSs) indicates that the threshold for ELC can be reached, in practice, at high powers and 300 K if certain non-radiative recombination mechanisms and photodetector (PD) losses are minimized. The studied DDSs consist of a LED, incorporating a high-quality GaAs active layer, optically coupled to a GaAs p–n homojunction PD. Both the LED and PD are integrated in a single device, offering a unique environment for studying ELC. In this paper, we provide a brief overview of the DDS characteristics and investigate the impact of non-radiative interface recombination on the LED, showing how the choice of the barrier layer materials can suppress this effect. We use experimental characterization techniques to calibrate numerical simulations, coupling the drift-diffusion model for charge transport to a photon transport model. To explore the interface effects, we compare DDSs with either GaInP/GaAs or AlGaAs/GaAs double heterojunctions. The results suggest that GaInP barriers allow interface recombination suppression that is sufficient to reach internal cooling in the LED.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Towards fully self-consistent optoelectronic simulation of planar devices

Photon recycling plays an important role in various optoelectronic devices, such as thin-film solar cells and intracavity double-diode structures presently studied for electroluminescent cooling. However, a complete description of photon recycling requires developing fully self-consistent simulation tools of photon and electronic charge transport in realistic device structures. In this paper, we describe a possible route towards such simulation tools in planar devices by combining the radiative transfer (RT) equation of photon transport with the drift-diffusion (DD) equations of electron and hole dynamics. We investigate the feasibility of the approach by selected proof-of-principle device studies. The results indicate that combining the RT and DD models not only yields the expected device characteristics, but also produces new insight into the pertinent local emission and absorption properties within the device structures. In particular, the model allows to accurately investigate how emission directivity and saturation affect the coupling coefficient in the double diode structures, showing that the main contribution to the coupling coefficient arises from the reflectivity of the top contact. For completeness, we also discuss how interference affects photon transport in resonant devices by an example calculation using the quantized fluctuational electrodynamics framework, paving way for self-consistent modeling tools that also account for wave-optical effects.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

High-performance near-field electroluminescent refrigeration device consisting of a GaAs light emitting diode and a Si photovoltaic cell

We consider a near-field electroluminescent refrigeration device. The device uses a GaAs light emitting diode as the cold side, and a Si photovoltaic cell as the hot side. The two sides are brought in close proximity to each other across a vacuum gap. The cooling is achieved by applying a positive bias on the GaAs light emitting diode. We show that the choice of GaAs and Si here can suppress the non-idealities for electroluminescent cooling purposes: GaAs has a wide bandgap with low Auger recombination, and Si is a non-polar semiconductor which leads to significantly reduced sub-bandgap heat transfer. We show that by using this configuration in the near-field regime, the cooling power density can reach 10 5 W/m 2 even in the presence of realistic Auger recombination and Shockley-Read-Hall recombination. In addition, with photovoltaic power recovery from the Si cell, the efficiency of the device can be further improved. Our work points to the significant potential of combining near-field heat transfer with active semiconductor devices for the control of heat flow.

14 SOLAR ENERGY↗

Dynamics of thermalization in GaInN/GaN quantum wells grown on ammonothermal GaN

In this work, we present measurements of the dynamics of photoexcited carriers in GaInN/GaN quantum wells (QWs) grown on ammonothermal GaN, especially thermalization and recombination rates. Emission properties were measured by time-resolved photoluminescence (PL) and electroluminescence spectroscopy. Due to the use of high quality homoepitaxial material, we were able to obtain very valuable data on carrier thermalization. The temperature dependence of the QW energy observed in PL shows characteristic S-shape with a step of about 10 meV. Such a behavior (related to thermalization and localization at potential fluctuations) is often reported for QWs; but in our samples, the effect is smaller than in heteroepitaxial InGaN/GaN QWs due to lower potential fluctuation in our material. Absorption properties were studied by photocurrent spectroscopy measurements. A comparison of emission and absorption spectra revealed a shift in energy of about 60 meV. Contrary to PL, the QW energy observed in absorption decreases monotonically with temperature, which can be described by a Bose-like dependence E(T) = E(0) − λ/(exp(θ/T) − 1), with parameters λ = (0.11 ± 0.01) eV, θ = (355 ± 20) K, or by a Varshni dependence with coefficients α = (10 ± 3) × 10{sup −4} eV/K and β = (1500 ± 500) K. Taking into account absorption and emission, the fluctuation amplitude (according to Eliseev theory) was σ = 14 meV. The time resolved PL revealed that in a short period (<1 ns) after excitation, the PL peaks were broadened because of the thermal distribution of carriers. We interpreted this distribution in terms of quasi-temperature (T{sub q}) of the carriers. The initial T{sub q} was of the order of 500 K. The thermalization led to a fast decrease of T{sub q}. The obtained cooling time in the QW was τ{sub C} = 0.3 ns, which was faster than the observed recombination time τ{sub R} = 2.2 ns (at 4 K)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Electroluminescent refrigeration by ultra-efficient GaAs light-emitting diodes

Electroluminescence—the conversion of electrons to photons in a light-emitting diode (LED)—can be used as a mechanism for refrigeration, provided that the LED has an exceptionally high quantum efficiency. We investigate the practical limits of present optoelectronic technology for cooling applications by optimizing a GaAs/GaInP double heterostructure LED. We develop a model of the design based on the physics of detailed balance and the methods of statistical ray optics, and predict an external luminescence efficiency of η ext = 97.7% at 263 K. To enhance the cooling coefficient of performance, we pair the refrigerated LED with a photovoltaic cell, which partially recovers the emitted optical energy as electricity. For applications near room temperature and moderate power densities (1.0–10 mW/cm 2 ), we project that an electroluminescent refrigerator can operate with up to 1.7× the coefficient of performance of thermoelectric coolers with ZT = 1, using the material quality in existing GaAs devices. We also predict superior cooling efficiency for cryogenic applications relative to both thermoelectric and laser cooling. Large improvements to these results are possible with optoelectronic devices that asymptotically approach unity luminescence efficiency.

36 MATERIALS SCIENCE↗

Measurement of scintillation and ionization yield with high-pressure gaseous mixtures of Xe and TMA for improved neutrinoless double beta decay and dark matter searches

The gaseous Xenon(Xe) time projection chamber (TPC) is an attractive detector technique for neutrinoless double beta decay and WIMP dark matter searches. While it is less dense compared to Liquid Xe detectors, it has intrinsic advantages in tracking capability and better energy resolution. The performance of gaseous Xe can be further improved by molecular additives such as trimethylamine(TMA), which is expected to (1) cool down the ionization electrons, (2) convert Xe excitation energy to TMA ionizations through Penning transfer, and (3) produce scintillation and electroluminescence light in a more easily detectable wavelength (300 nm). In order to test the feasibility of the performance improvements with TMA, in this paper we made the first direct measurement of Penning and fluorescence transfer efficiency with gaseous mixtures of Xe and TMA. While we observed a Penning transfer efficiency up to ~35%, we found strong suppression of primary scintillation light with TMA. We also found that the primary scintillation light with Xe and TMA mixture can be well characterized by ~3% fluorescence transfer from Xe to TMA, with further suppression due to TMA self-quenching. No evidence of the scintillation light produced by recombination of TMA ions was found. This strong suppression of scintillation light makes dark matter searches quite challenging, while the possibility of improved neutrinoless double beta decay searches remains open. Finally, this work has been carried out within the context of the NEXT collaboration.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Improving solar panel durability through novel panel designs and advanced manufacturing equipment

Work in the project was spread across 4 main themes:1) Improved Understanding of Why Cracks Form and Cause Degradation in Solar Cells: We developed a finite element model which correlated well with experimental determined deflection vs load profiles and which predicted stress profiles vs load level and temperature. These profiles helped to guide brace designs and showed the high stress levels seen in the silicon near the interconnect wire locations as the temperature is cooled below -30C, likely forming "invisible" microcracks. Experiments showed how for polymer backsheet modules, a brief exposure to such low temperatures made modules extremely sensitive to propagation of these microcracks at relatively low load levels, and how thicker and softer encapsulant helped to reduce this crack sensitivity. We showed for some modules that most cracks that are seen under loading had their origin at short, hard to see, V-cracks from soldering damage, and how the shunting from cells with high densities of cracks reduces energy delivery more than Pmax. 2) Improved Durability Testing Methods With Respect to Cracked Cells: We lobbied the PV community throughout the project that IEC 61215 was insufficient to probe the sensitivity of module Pmax degradation due to cracks in that in did not have a test leg that included a crack creation step (static loading) followed by a crack opening step (cyclic loading and/or thermal cycling). We published extensively on how pre- existing cracks opened up with cyclic loading. The new IEC TS 63209-1 ED1 test sequence now include our recommendations, and this should lead to improved module designs and reduced risk for investors. We also published recommendations for a new "Cold Climate Test" sequence to probe the sensitivity of modules to degradation from short microcracks formed when modules see temperatures below -30C followed by front side loading. We participated in several USTAG meetings related to cracked cells, EL testing, and mechanical load testing and provided input to the group to improve new standards under consideration. We also showed how the act of performing an EL test can affect the test results due to heating from the injected current. 3) New Module Designs and Related Manufacturing Methods & Equipment: We demonstrated reduced crack sensitivity on encapsulated cell coupons the benefits of building protective compressive stress into the cells by laminating them in a bent state and then allowing the coupon to flatten out after lamination. Our attempts to scale this to the module level with a more manufacturable sequence did not demonstrate the same positive effects, but we hope that others will follow up with other variations on this bent lamination or bent cooling concept to make more durable modules. 4) New Module Mounting Designs: We explored a range of bracing concepts which pressed on the backsheet to slightly bow the glass outward and place cells in a state of protective compressive stress and to reduce the deflection under front side loads. These successfully reduced cell cracking and crack opening, but high static loads permanently deformed cost-effective braces, after which they provided little benefit. We settled on an elegant & effective solution – the RailPad, where lightweight bracing elements are placed between the mounting rail(s) and the backsheet, and the existing strength of the rails is used to prevent module deflection under load. New construction and retrofit designs were made, and test sites were implemented in FL and MA. We applied for RailPad patent protection.

14 SOLAR ENERGY↗