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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Analytical modeling and simulation of electrical contact resistance for elastic rough electrode surface contact including frictional temperature rise

An improved electrical contact resistance (ECR) model for elastic rough electrode contact is proposed, incorporating the effects of asperity interactions and temperature rise by frictional and joule heating. The analytical simulation results show that the ECR decreases steeply at the beginning of the contact between Al and Cu. However, it becomes stabilized after reaching a specific contact force. It is also found that the longer elapsed sliding contact time, the higher ECR due to the increase in electrical resistivity of electrode materials by the frictional temperature rise at the interface. The effects of surface roughness parameters on ECR are studied through the 3 2 full-factorial design-of-experiment analysis. Based on the two representative roughness parameters, i.e., root-mean-square (rms) roughness and asperity radius, their individual and coupled effects on the saturated ECR are examined. The saturated ECR increases with the rms roughness for a rough machined surface condition, but it is hardly affected by the asperity radius. On the other hand, the saturated ECR increases with both the rms roughness and the asperity radius under a smooth thin film surface condition.

42 ENGINEERING↗
NASA NTRS1993

Development of superconducting YBa2Cu3O(x) wires with low resistance electrical contacts

Materials exhibiting superconductivity above liquid nitrogen temperatures (77 K) will enable new applications of this phenomena. One of the first commercial applications of this technology will be superconducting magnets for medical imaging. However, a large number of aerospace applications of the high temperature superconducting materials have also been identified. These include magnetic suspension and balance of models in wind tunnels and resistanceless leads to anemometers. The development of superconducting wires fabricated from the ceramic materials is critical for these applications. The progress in application of a patented fiber process developed by Clemson University for the fabrication of superconducting wires is reviewed. The effect of particle size and heat treatment on the quality of materials is discussed. Recent advances made at Christopher Newport College in the development of micro-ohm resistance electrical contacts which are capable of carrying the highest reported direct current to this material is presented.

Buoncristiani, A. M.↗
NASA NTRS1985

Thermal and electrical contact conductance studies

Prediction of electrical and thermal contact resistance for pressed, nominally flat contacts is complicated by the large number of variables which influence contact formation. This is reflected in experimental results as a wide variation in contact resistances, spanning up to six orders of magnitude. A series of experiments were performed to observe the effects of oxidation and surface roughness on contact resistance. Electrical contact resistance and thermal contact conductance from 4 to 290 K on OFHC Cu contacts are reported. Electrical contact resistance was measured with a 4-wire DC technique. Thermal contact conductance was determined by steady-state longitudinal heat flow. Corrections for the bulk contribution ot the overall measured resistance were made, with the remaining resistance due solely to the presence of the contact.

Vansciver, S. W.↗
NASA NTRS2021

Thermoelectric System Economics - The Apex: New Paradigms in Manufacturing and Interface Performance Relationships Driving System Cost Optimizations

Thermoelectric energy recovery systems require cost-optimized designs with high thermal and thermoelectric (TE) performance to surmount common commercialization barriers controlling the acceptance of thermoelectric generator (TEG) systems. Recent work has addressed this requirement with new analytic tools and paradigms that allow integrated TEG cost-performance analysis and optimization. New work herein has identified the existence of optimized TE element design (i.e., TE element length) for minimizing TEG cost and provides design guidelines associated with critical thermal and electrical contact resistance effects and TE manufacturing sensitivities. Once optimum hot-side heat flux criteria are satisfied, this work highlights the tradeoffs between interface resistance effects and manufacturing cost effects in determining optimum-cost TE element lengths, and then quantifies the increase in optimum-cost TE lengths as manufacturing costs become more sensitive to TE element lengths. Optimized TE element design criteria and key non-dimensional design parameters (i.e., [𝐶′′′LTE/𝐶′′], [TE/con], [con/(TE,aveLTE)]) driving the design are presented and explained showing the interdependencies between manufacturing cost parameters and thermal and electrical interface impacts on integrated TE cost-performance analysis and design. Comprehensive TEG system cost-performance relationships clearly demonstrate the two parameters that most greatly impact the TEG system cost are heat exchanger costs ($/(W/K)) and TE hot side heat flux. Reducing heat exhanger cost from $1/(W/K) to $0.5/(W/K) can decrease TEG system cost by $2/W to $4/W depending on TE hot side heat fluxes from 4-10 W/cm2. The impact of TE hot side heat flux on TEG system cost is larger; reducing TE system cost by factors of 2-4 as TE hot side heat flux increases from 4 W/cm2 to high levels around 18 W/cm2. The levels of thermal contact resistance and electrical contact resistance required to even approach the critical TEG system cost level of $1/W are characterized by con = 1.0 x 10-10 -m2 and r = 0.1, respectively. This not only lowers TEG costs, but it also makes the TEG system costs less sensitive to TE manufacturing dependences on TE element length. New design paradigms and relationships create holistic, integrated TE performance-cost models that enhance understanding of crucial interrelationships between component costs, TE design parameters and material properties, heat exchanger design parameters, interfacial heat flux, and now thermal and electrical interface effects in minimizing TEG system costs.

Hendricks, Terry J.↗
DOE OSTI2024

Fabrication and Performance Evaluation of Double-Sided Copper Nanowire Arrays as Thermal and Electrical Interfacial Layers

Reducing contact interface thermal and electrical resistances is in great demand across various industries, particularly in the semiconductor industry. This study introduces an approach using double-sided copper nanowire (Cu NW) arrays on copper sheets as both thermal and electrical interfacial layers, designed to effectively accommodate the topographical inconsistencies between contact surfaces. Further, experimental outcomes reveal a significant reduction in thermal contact resistance (TCR), with a value of 2.5 mm 2 K W –1 , thereby exceeding the efficiency of reported nanostructural thermal interface materials (TIMs). Additionally, when utilized as an electrical interfacial layer, these double-sided Cu NWs arrays dramatically reduced electrical contact resistance (ECR), outperforming traditional conductive grease in applications necessitating separable bonding, though showing comparable performance to costly silver-based conductive epoxies required for permanent, inseparable bonds. The promising results of the double-sided Cu NWs arrays in reducing both TCR and ECR, confirmed by finite element simulation, highlight their substantial potential in advancing TIMs and electrical interconnection applications across various sectors.

42 ENGINEERING↗
DOE OSTI2026

Optimizing Porous Transport Layer Porosity for Proton Exchange Membrane Water Electrolysis

An empirical model is presented that describes anode-side losses related to porous transport layer (PTL) morphology in proton exchange membrane water electrolysis (PEMWE). The model is based on an advanced voltage breakdown analysis that links various overpotentials to PTL morphology. Custom Ti PTLs, spanning uncommonly low porosities (22 - 31%), were fabricated and analyzed with X-ray CT to obtain pore and particle size distributions. Particle size distributions were consistent across samples with an average particle diameter of 12.0?..mu..m, whereas average pore diameters ranged from 6.0 to 7.0?..mu..m. The PTLs were tested in standard PEMWE cell assemblies with anode catalyst loadings of 0.1 mgIr cm-2 to obtain polarization curves, electrochemical impedance spectra, and augmented Tafel analysis. The PTL-dependent anode side losses were deconvoluted and assigned to excess utilization, concentration, ion transport resistance, and electrical contact resistance overpotentials. The data and model reveal an optimal 20 - 28% PTL porosity region where utilization and contact resistance overpotentials are minimized without triggering concentration and ion transport losses related to water deprivation. The optimal PTL porosity depends on the operating current density and is demonstrated at realistic PEMWE water flow rates to establish PTL design guidance for operation at scale.

08 HYDROGEN↗
NASA NTRS1988

Effects of oxidation and roughness on Cu contact resistance from 4 to 290 K

Knowledge of the factors influencing contact resistance is important for optimizing system design in cryogenic applications. In space cryogenics, indirect cooling of infrared components is the primary concern. The presence of bolted joints results in contact resistances which can dominate all other contributions to the overall heat transfer rate. Here, thermal and electrical contact resistances measured between 4 K and 290 K for a series of bolted OFHC Cu contacts are reported. Surface roughness is found to have little effect on the overall contact resistance within the experimental limits, while oxidation can increase the contact resistance by as much as a factor of 100. Thermal and electrical contact resistances measured on the same contact show that the contact resistance temperature dependence does not follow the bulk dependence. For example, the residual resistance ratio (RRR) of the OFHC Cu is 110, but for contacts made from this material, the RRR is about two.

Nilles, M. J.↗
NASA NTRS1979

Electrical hazards posed by graphite fibers

The direct electrical resistance and the electrical contact resistance of graphite fibers released from both burned and unburned Fiberite T300/1034 composite were measured. The voltage at which arcing occurs due to fibers settling on electrical conductors was also determined. On the basis of results obtained, an assessment was made of the hazards posed by graphite fibers to electrical equipment.

Springer, G. S.↗
DOE OSTI2023

Change of Electrical and Transport Properties of Nickel Oxide by Carrier Concentration and Temperature through First-Principle Calculations

Abstract Nickel is typically used as one of the main components in electrical contact devices or connectors. Nickel oxide (NiO) is usually formed on the surfaces of electrodes and can negatively impact system performance by introducing electrical contact resistance. The thermal, electrical, and transport properties of NiO, as a Mott insulator or a p-type semiconductor, can be altered by operating and environmental conditions such as temperature and stress/strain by contact. In this study, we investigate the fundamental material properties of NiO through the first-principle calculations. First, we obtain and compare the lattice parameter, magnetic moment, and electronic structure for NiO via the WIEN2K simulations with four different potentials (i.e., GGA, GGA + U, LSDA, and LSDA + U). Then, using the WIEN2K simulation results with LSDA + U potential that produces a highly accurate bandgap for NiO, we calculate the electrical conductivity and electrical part of the thermal conductivity of nickel and NiO as a function of temperature and carrier concentration through the BoltzTraP simulations. Systematic simulation results revealed that the electrical conductivity relative to the relaxation time for NiO increases with the carrier concentration, while it shows a slightly decreasing trend with temperature under a fixed carrier concentration. By contrast, the electrical part of the thermal conductivity shows an increasing trend considering carrier concentration and temperature.

Shah, Nayem Md. Reza↗
NASA NTRS1967

Thin film process forms effective electrical contacts on semiconductor crystals

Process makes microscopic, low-resistance electrical contacts on hexagonal n-type silicon carbide crystals used for microelectronic devices. A vacuum deposition of aluminum is etched to expose the bare silicon carbide where the electrical contacts are made. Sputtering alternating layers of tantalum and gold forms the alloy film.

Formigoni, N. P.↗
NASA NTRS1980

Reliability improvements in tunable Pb1-xSnxSe diode lasers

Recent developments in the technology of Pb-salt diode lasers which have led to significant improvements in reliability and lifetime, and to improved operation at very long wavelengths are described. A combination of packaging and contacting-metallurgy improvements has led to diode lasers that are stable both in terms of temperature cycling and shelf-storage time. Lasers cycled over 500 times between 77 K and 300 K have exhibited no measurable changes in either electrical contact resistance or threshold current. Utilizing metallurgical contacting process, both lasers and experimental n-type and p-type bulk materials are shown to have electrical contact resistance values that are stable for shelf storage periods well in excess of one year. Problems and experiments which have led to devices with improved performance stability are discussed. Stable device configurations achieved for material compositions yielding lasers which operate continuously at wavelengths as long as 30.3 micrometers are described.

Linden, K. J.↗
NASA NTRS1985

Eutectic Contact Inks for Solar Cells

Low-resistance electrical contacts formed on solar cells by melting powders of eutectic composition of semiconductor and dopant. Process improves cell performance without subjecting cell to processing temperatures high enough to degrade other characteristics.

Ross, B.↗