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Results for “direct electron beam lithography”

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All sources NASA NTRS DOE OSTI

DOE OSTI2024

Direct electron beam patterning of electro-optically active PEDOT:PSS

The optical and electronic tunability of the conductive polymer poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) has enabled emerging applications as diverse as bioelectronics, flexible electronics, and micro- and nano-photonics. High-resolution spatial patterning of PEDOT:PSS opens up opportunities for novel active devices in a range of fields. However, typical lithographic processes require tedious indirect patterning and dry etch processes, while solution-processing methods such as ink-jet printing have limited spatial resolution. Here, we report a method for direct write nano-patterning of commercially available PEDOT:PSS through electron-beam induced solubility modulation. The written structures are water stable and maintain the conductivity as well as electrochemical and optical properties of PEDOT:PSS, highlighting the broad utility of our method. We demonstrate the potential of our strategy by preparing prototypical nano-wire structures with feature sizes down to 250 nm, an order of magnitude finer than previously reported direct write methods, opening the possibility of writing chip-scale microelectronic and optical devices. We finally use the high-resolution writing capabilities to fabricate electrically-switchable optical diffraction gratings. We show active switching in this archetypal system with >95 % contrast at CMOS-compatible voltages of +2 V and -3 V, offering a route towards highly-miniaturized dynamic optoelectronic devices.

42 ENGINEERING↗

DOE OSTI2020

Fluidic Flow Assisted Deterministic Folding of Van der Waals Materials

Origami offers a distinct approach for designing and engineering new material structures and properties. The folding and stacking of atomically thin van der Waals (vdW) materials, for example, can lead to intriguing new physical properties including bandgap tuning, Van Hove singularity, and superconductivity. On the other hand, achieving well-controlled folding of vdW materials with high spatial precision has been extremely challenging and difficult to scale toward large areas. In this paper, a deterministic technique is reported to fold vdW materials at a defined position and direction using microfluidic forces. Electron beam lithography (EBL) is utilized to define the folding area, which allows precise control of the folding geometry, direction, and position beyond 100 nm resolution. Using this technique, single-atomic-layer vdW materials or their heterostructures can be folded without the need for any external supporting layers in the final folded structure. In addition, arrays of patterns can be folded across a large area using this technique and electronic devices that can reconfigure device functionalities through folding are also demonstrated. Such scalable formation of folded vdW material structures with high precision can lead to the creation of new atomic-scale materials and superlattices as well as opening the door to realizing foldable and reconfigurable electronics.

2D materials↗

DOE OSTI2020

Poling thin-film x-cut lithium niobate for quasi-phase matching with sub-micrometer periodicity

Quasi-phase-matched grating structures in lithium niobate waveguides with sub-micrometer periodicities will benefit the development of short-wavelength nonlinear optical devices. Here, we report on the reproducible formation of periodically poled domains in x-cut single-crystalline thin-film lithium niobate with periodicities as short as 600 nm. Shaped single-voltage poling pulses were applied to electrode structures that were fabricated by a combination of electron-beam and direct-writing laser lithography. Evidence of successful poling with good quality was obtained through second-harmonic microscopy and piezoresponse force microscopy imaging. For the sub-micrometer period structures, we observed patterns with a double periodicity formed by domain interactions and features with sizes <200 nm.

Zhao, Jie (ORCID:0000000306230125)↗

DOE OSTI2022

Review of metal-containing resists in electron beam lithography: perspectives for extreme ultraviolet patterning

Background: Metal-containing resists entered the mainstream semiconductor industry process flow to mitigate the low absorbance of extreme ultraviolet (EUV) radiation by thin films of organic resists that lead to poor sensitivity and their inability to handle rigors of development and etching conditions. Aim: The long and rich history of using metal-containing resists in electron beam lithography can offer interesting lessons, pointers, and insights to the relatively newcomer EUV lithography, which is slightly over a decade old. Approach: Electron beam lithography has been enjoying a considerable amount of freedom in the choice of resist materials for close to 50 years; especially the use of metal-containing resists to attain not only single digit nanometer resolution, higher sensitivity, and etch resistance but also lower line-edge roughness. Here, we make a comprehensive historical review of the progress made in the patterning of metal-containing resists in electron beam lithography and derive insights that can be potentially useful in EUV patterning. Perspectives: Small molecular weight resists are proven to be crucial for achieving higher resolution with low line-edge roughness. Simplifying process flow by reducing etch-stack-layers is conceivable with metal-containing resists, along with direct-patterning of functional materials for heterogeneous integration. Efficient contact hole patterning at tighter pitches may be incumbent on progress in positive-tone resist research.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2020

High-Resolution Three-Dimensional Sculpting of Two-Dimensional Graphene Oxide by E-Beam Direct Write

On demand switchable additive/subtractive patterning of 2D nanomaterials is an essential capability for developing new concepts of functional nanomaterials and their device realizations. Traditionally, this is performed via a multi-step process using photoresist coating and patterning by conventional photo or electron beam lithography, which is followed by bulk dry/wet etch or deposition. This limits the range of functionalities and structural topologies that can be achieved, as well as increases the complexity, cost, and possibility of contamination which are significant barriers to device fabrication from highly sensitive 2D materials. Focused electron beam induced processing (FEBIP) enables a material chemistry/site-specific, high-resolution multi-mode atomic scale processing and provides unprecedented opportunities for direct-write, single-step surface patterning of 2D nanomaterials with an in-situ imaging capability. It allows for realizing a rapid multi-scale/multi-mode approach, ranging from an atomic scale manipulation (e.g., via targeted defect introduction as an active site) to a large-area surface modification on nano and micro scales, including patterned doping and material removal/deposition with 2D (in-plane)/3D (out-of-plane) control. In this work, we report on a new capability of FEBIP for nanoscale patterning of graphene oxide via removal of oxygenated carbon moieties with no use of reactive gas required for etching complemented by carbon atom deposition using focused electron beam. The mechanism of experimentally observed phenomena is explored using the density functional theory (DFT) calculations, revealing that interactions of e-beam liberated reactive oxygen radicals with carbon atoms on graphene basal plane lead to creation of atomic vacancies in the material. The reaction by-products are volatile carbon di-oxides, which are dissociated and volatilized from the graphene oxide surface functional groups by interactions with an energetic focused electron beam. Along with selective “subtractive” patterning of graphene oxide, the same electron beam with increased irradiation doses can deposit out-of-plane 3D carbon nanostructures on top of or around the 2D etched pattern, thus forming a hybrid 2D/3D nanocomposite with feature control down to a few nanometers. Furthermore, this in-operando dual nanofabrication capability of FEBIP is unmatched by any other nanopatterning techniques and opens a new design window for forming 2D/3D complex nanostructures and functional nanodevices.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Dynamic coupling and spin-wave dispersions in a magnetic hybrid system made of an artificial spin-ice structure and an extended NiFe underlayer

We present a combined experimental and numerical study of the spin-wave dispersion in a NiFe artificial spin-ice (ASI) system consisting of an array of stadium-shaped nanoislands deposited on the top of a continuous NiFe film with non-magnetic spacer layers of varying thickness. The spin-wave dispersion, measured by wavevector resolved Brillouin light scattering spectroscopy in the Damon–Eshbach configuration, consists of a rich number of modes, with either stationary or propagating character. We find that the lowest frequency mode displays a bandwidth of ~0.5 GHz, which is independent of the presence of the film underneath. On the contrary, the Brillouin light scattering intensity of some of the detected modes strongly depends on the presence of the extended thin-film underlayer. Micromagnetic simulations unveil the details of the dynamic coupling between the ASI lattice and film underlayer. Interestingly, the ASI lattice facilitates dynamics of the film either specific wavelengths or intensity modulation peculiar to the modes of the ASI elements imprinted in the film. Our results demonstrate that propagating spin waves can be modulated at the nanometer length scale by harnessing the dynamic mode coupling in the vertical, i.e., the out-of-plane direction of suitably designed magnonic structures.

36 MATERIALS SCIENCE↗

DOE OSTI2026

Integrated Strategies for Overcoming Resolution Limits in Electron Beam Lithography of Chemically Amplified Resists

Electron beam lithography (EBL) of chemically amplified resists (CARs) faces fundamental challenges, including stochastic electron scattering and acid diffusion, that limit resolution and reproducibility. Using SU-8 as a model CAR, this study systematically investigated complementary strategies to address these challenges, combining multipass exposure, proximity effect correction (PEC) with midrange correction factors, base quencher incorporation, and post-exposure bake (PEB) suppression. Monte Carlo simulations and calibrated PEC modeling revealed that extending the point spread function to include a midrange scattering component significantly improved critical dimension (CD) control across varying pattern densities, correcting deviations that conventional two-term PEC failed to capture. Multipass exposure, particularly 4-pass writing with a 25% offset, redistributed the dose to average stochastic beam and scattering fluctuations, reducing line-width roughness by more than 50% and yielding more uniform nanoscale features. Photoacid confinement was investigated by adding urea as a base quencher, which successfully reduced acid diffusion but introduced substantial sensitivity penalties without improving ultimate resolution or Z-factor performance, underscoring the trade-offs of chemical versus physical confinement. Suppressing PEB most directly minimized acid diffusion, resulting in improved Z-factors and reproducible 30 nm half-pitch dense line/space patterns. Overall, these results demonstrated that PEC with midrange correction, multipass strategies, quencher additives, and PEB-free processing addresses different aspects of the EBL process window and that their integration provides a comprehensive framework for managing stochastic scattering, diffusion, and chemical amplification effects. This framework advances dense nanoscale patterning in CARs and establishes guiding principles for optimizing resist design and process strategies in high-resolution EBL and potentially other advanced lithographies, such as extreme ultraviolet (EUV) lithography.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Zinc‐Imidazolate Films as an All‐Dry Resist Technology

Here, motivated by the drawbacks of solution phase processing, an all‐dry resist formation process is presented that utilizes amorphous zinc‐imidazolate (aZnMIm) films deposited by atomic/molecular layer deposition (ALD/MLD), patterned with electron beam lithography (EBL), and developed by novel low temperature (120 °C) gas phase etching using 1,1,1,5,5,5‐hexafluoroacetylacetone (hfacH) to achieve well‐resolved 22 nm lines with a pitch of 30 nm. The effects of electron beam irradiation on the chemical structure and hfacH etch resistance of aZnMIm films are investigated, and it is found that electron irradiation degrades the 2‐methylimidazolate ligands and transforms aZnMIm into a more dense material that is resistant to etching by hfacH and has a C:N:Zn ratio effectively identical to that of unmodified aZnMIm. These findings showcase the potential for aZnMIm films to function in a dry resist technology. Sensitivity, contrast, and critical dimensions of the patterns are determined to be 37 mC cm −2 , 0.87, and 29 nm, respectively, for aZnMIm deposited on silicon substrates and patterned at 30 keV. This work introduces a new direction for solvent‐free resist processing, offering the prospect of scalable, high‐resolution patterning techniques for advanced semiconductor fabrication processes.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2024

Block copolymer self-assembly derived mesoporous magnetic materials with three-dimensionally (3D) co-continuous gyroid nanostructure

Magnetic nanomaterials are gaining interest for their many applications in technological areas from information science and computing to next-generation quantum energy materials. While magnetic materials have historically been nanostructured through techniques such as lithography and molecular beam epitaxy, there has recently been growing interest in using soft matter self-assembly. In this work, a triblock terpolymer, poly(isoprene-block-styrene-block-ethylene oxide) (ISO), is used as a structure directing agent for aluminosilicate sol nanoparticles and magnetic material precursors to generate organic–inorganic bulk hybrid films with co-continuous morphology. After thermal processing into mesoporous materials, results from a combination of small angle X-ray scattering (SAXS) and scanning electron microscopy (SEM) are consistent with the double gyroid morphology. Nitrogen sorption measurements reveal a type IV isotherm with H1 hysteresis, and yield a specific surface area of around 200 m 2 g −1 and an average pore size of 23 nm. The magnetization of the mesostructured material as a function of applied field shows magnetic hysteresis and coercivity at 300 K and 10 K. Comparison of magnetic measurements between the mesoporous gyroid and an unstructured bulk magnetic material, derived from the identical inorganic precursors, reveals the structured material exhibits a coercivity of 250 Oe, opposed to 148 Oe for the unstructured at 10 K, and presence of remnant magnetic moment not conventionally found in bulk hematite; both of these properties are attributed to the mesostructure. This scalable route to mesoporous magnetic materials with co-continuous morphologies from block copolymer self-assembly may provide a pathway to advanced magnetic nanomaterials with a range of potential applications.

Chemistry↗

DOE OSTI2020

Fabrication of field-effect transistors with transfer-free nanostructured carbon as semiconducting channel material

Carbon nanostructures as active channel material in field effect transistors (FETs) are appealing in microelectronics for their improved performance such as high speed and low energy dissipation. However, these devices require the incorporation of nanostructure transfer steps in the fabrication process flow, which makes difficult its application in large scale integration circuits. Here we present a novel method for the fabrication of FETs with nanostructured carbon in the channel with p-type semiconducting properties and intermediate drain-source current (IDS) on/off ratio. The method is based on the use of Ni nanoparticles in the source-drain gap region as seed material for the formation of carbon nanostructures in the FET channel. FETs without Ni nanoparticles in the channel showed no modulation of IDS as a function of gate voltage. The device fabrication process does not require any carbon nanostructure transfer steps since it directly forms carbon nanostructures electrically connected to the device's source and drain electrodes via electron-beam evaporation of carbon and conventional lithographic processes. Since all device fabrication steps are compatible with Si technology processes, they are capable of being further optimized following process development protocols practiced by the semiconductor industry.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2025

Molecular Layer Deposited Aluminum‐Based Hybrid Resist for High‐Resolution Nanolithography and Direct Ultra‐High Aspect Ratio Pattern Transfer

Inorganic-containing hybrid photoresists are critical for next-generation extreme ultraviolet (EUV) lithography and angstrom-era semiconductor miniaturization. However, associated conventional solution processing struggles to achieve ultrathin, uniform films with high conformality and compositional control, limiting overall patterning performance. Here, this study reports the systematic lithographic patterning characterization of an Al-based hybrid resist synthesized via vapor-phase molecular layer deposition (MLD), using the trimethylaluminum (TMA) metal precursor and the hydroquinone (HQ) aromatic organic linker. The resist supports both sub-20 nm high-resolution nanolithography and virtually infinite silicon plasma etch selectivity. Lithographic performance studied using electron beam lithography (EBL) as a proxy for EUV shows that, under an optimized process adopting post-exposure bake, the resist achieves the best resolution of 15.4 nm linewidth under stringent 1:1 line-space high-density patterning—limited only by the minimum beam size of the EBL system. The resist also shows wide dose latitude and balanced performance in resolution, roughness, and sensitivity. The infinite silicon etch selectivity, stemming from spontaneous aluminum oxyfluoride passivation layer formation, enables fabrication of micrometer-tall, 40 nm-wide silicon nanofin structures using only a ≈30 nm-thick resist layer, without no hard mask. These results highlight the potential of MLD-based hybrid resists for developing next-generation resist materials for micro/nanoelectronics manufacturing.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Nanoaperture fabrication in ultra-smooth single-grain gold films with helium ion beam lithography

In this paper, we demonstrate a simple three-step gold thin-film sample preparation process to enhance the morphology and lithographic precision using helium ion based direct-writing. The procedure includes metal deposition, heat treatment and template stripping, which produce smooth monocrystalline gold grains with sizes up to 500 nm and an average surface roughness of 0.267 nm. By using a helium ion microscope, we can fabricate structures with feature sizes less than 20 nm in a 100 nm thick gold film with high-quality sidewalls. We demonstrate the efficacy of this technique by producing high-quality double nanohole (DNH) nanoapertures for single nanoparticle trapping in a single grain of 100 nm thick gold. This procedure can be applied to a wide range of antenna geometries and features that need to be fabricated producing optical and or electronic devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2023

Mitigating challenges in aberration-corrected electron-beam lithography on electron-opaque substrates

Aberration-corrected electron-beam lithography (AC-EBL) using ultra-thin electron transparent membranes has achieved single-digit nanometer resolution in two widely used electron-beam resists: poly (methyl methacrylate) (PMMA) and hydrogen silsesquioxane. On the other hand, AC-EBL implementation on thick, electron-opaque substrates is appealing for conventional top-down fabrication of quantum devices with nanometer-scale features. To investigate the performance of AC-EBL on thick substrates, we measured the lithographic point spread function of a 200 keV aberration-corrected scanning transmission electron microscope by defining both positive and negative patterns in PMMA thin films, spin-cast on thick SiO 2 /Si substrates. We present the problems encountered during pre-exposure beam focusing and discuss methods to overcome them. In addition, applying some of these methods using commercial 50 nm thick SiN X membranes with thick Si support frames, we printed arrays of holes in PMMA with pitches around 26 nm on SiN X /Si substrates with increasing Si thickness. Here, our results show that proximity effects from even 50 nm thick SiN X membranes limit hole arrays to 20 nm pitch; however, down to this limit, the effect of the substrate thickness on the pattern quality is minimal. These results highlight the need for novel resists less susceptible to proximity effects, or resists which can be used directly, after development, as the dielectric material in periodic gates in 2D quantum devices.

2D quantum devices↗

DOE OSTI2020

Rotational self-alignment of graphene seeds for nanoribbon synthesis on Ge(001) via chemical vapor deposition

The chemical vapor deposition of CH 4 on Ge(001) results in the anisotropic synthesis of graphene nanoribbons that are aligned to Ge$\langle$110$\rangle$ and have faceted armchair edges, sub-10 nm widths, and lengths greater than 100 nm. The utilization of small graphene seeds to initiate nanoribbon synthesis provides control over the nanoribbon placement and orientation. However, in order to exclusively grow nanoribbons and suppress the concomitant growth of lower aspect ratio crystals, it is imperative to control the crystallographic orientation of the seeds with respect to the Ge lattice. Here, we demonstrate that when seeds are less than 18 nm in diameter, they are able to rotate upon annealing at 910 °C prior to nanoribbon synthesis. The effect of this rotation on the resulting nanoribbons’ orientation is characterized as a function of the diameter and initial crystallographic orientation of the seeds. The seeds preferentially rotate to an orientation in which an armchair direction of their lattice is parallel to Ge$\langle$110$\rangle$—subsequently maximizing the anisotropy in growth kinetics. By exploiting this seed rotation phenomenon, we demonstrate the fabrication of seamless nanoribbon meshes and gain understanding that will affect future efforts to create arrays of unidirectionally aligned nanoribbons.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Element-specific first order reversal curves measured by magnetic transmission x-ray microscopy

The first-order reversal curve (FORC) method is a macroscopic measurement technique that can be used to extract quantitative and microscopic properties of hysteretic systems. Using magnetic transmission x-ray microscopy (MTXM), local element-specific FORC measurements are performed on a 20 nm thick film of CoTb. The FORCs measured with microscopy reveal a step-by-step domain evolution under the magnetic field cycling protocol and provide a direct visualization of the mechanistic interpretation of FORC diagrams. They are compared with magnetometry FORCs and show good quantitative agreement. Furthermore, the high spatial resolution and element-specific sensitivity of MTXM provide new capabilities to measure FORCs in small regions or specific phases within multicomponent systems, including buried layers in heterostructures. The ability to perform FORCs on very small features is demonstrated with the MTXM-FORC measurement of a rectangular microstructure with vortex-like Landau structures. This work demonstrates the confluence of two uniquely powerful techniques to achieve quantitative insight into nanoscale magnetic behavior.

36 MATERIALS SCIENCE↗

DOE OSTI2024

High-resolution chemical patterns from negative tone resists for the integration of extreme ultraviolet patterns of metal-oxide resists with directed self-assembly of block copolymers

Extreme ultraviolet (EUV) lithography faces significant challenges in designing suitable resist materials that can provide adequate precision, while maintaining economically viable throughput. These challenges in resist materials have led to printing failures and high roughness in EUV patterns, compromising the performance of semiconductor devices. Integrating directed self-assembly (DSA) of block copolymers (BCPs) with EUV lithography offers a promising solution because, while the BCPs register to the EUV-defined chemical guiding pattern, the thermodynamically determined structures of the BCPs automatically rectify defects and roughness in the EUV pattern. Despite the superior resolution of metal-oxide EUV resists (MORs), their application to DSA is limited by the difficulty in converting them into chemical patterns that allow effective transfer of the rectified patterns of DSA films into inorganic materials. To address this challenge, this study introduces a novel strategy for fabricating chemical patterns using hydrogen silsesquioxane (HSQ), a high-resolution negative tone inorganic resist, as a model system for MORs. Initially, a sacrificial Cr pattern is generated from HSQ patterns via reactive ion etching. The sacrificial Cr pattern is converted into a chemical pattern by first grafting a water-soluble polyethylene oxide brush onto the substrate, then wet etching the Cr, and finally grafting nonpolar polystyrene brushes. Assembling polystyrene-block-poly(methyl methacrylate) on these patterns results in structures oriented and registered with the underlying pattern, achieving 24 nm full-pitch resolutions. In conclusion, this approach has the potential to integrate MOR patterns into the DSA process, thereby enabling the generation of high-quality sub-10 nm patterns with high-χ BCPs.

Atomic force microscopy↗