SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
A digital logic controller provides instruction execution times on the order of 50 nanoseconds and employing read-only memory outputting instructions to a pipeline register, a portion of each instruction providing a status-select control signal and address signals for controlling selection of the next instruction from the read-only memory.
A circuit topography is presented which is used to create usable digital logic gates using N (negatively doped) channel Junction Field Effect Transistors (JFETs) and load resistors, level shifting resistors, and supply rails whose values are based on the direct current (DC) parametric distributions of those JFETs. This method has direct application to the current state of the art in high temperature, for example 300.degree. C. to 500.degree. C. and higher, silicon carbide (SiC) device production. The ability to produce inverting and combinatorial logic enables the production of pulse and edge triggered latches. This scale of logic synthesis would bring digital logic and state machine capabilities to devices operating in extremely hot environments, such as the surface of Venus, near hydrothermal vents, within nuclear reactors (SiC is inherently radiation hardened), and within internal combustion engines. The basic logic gate can be configured as a driver for oscillator circuits allowing for time bases and simple digitizers for resistive or reactive sensors. The basic structure of this innovation, the inverter, can be reconfigured into various analog circuit topographies through the use of feedback structures.
Constructing Exclusive-Or digital logic circuit in single module
Digital logic control of chromatographic system for measuring instrumental contributions to band broadening
A circuit topography is used to create usable, digital logic gates using N (negatively doped) channel junction field effect transistors (JFETs), load resistors, level shifting resistors, and supply rails whose values are based on the DC parametric distributions of these JFETs. This method has direct application to the current state-of-the-art in high-temperature (300 to 500 C and higher) silicon carbide (SiC) device production, and defines an adaptation to the logic gate described in U.S. Patent 7,688,117 in that, by removing the level shifter from the output of the gate structure described in the patent (and applying it to the input of the same gate), a source-coupled gate topography is created. This structure allows for the construction AND/OR (sum of products) arrays that use far fewer transistors and resistors than the same array as constructed from the gates described in the aforementioned patent. This plays a central role when large multiplexer constructs are necessary; for example, as in the construction of memory. This innovation moves the resistive level shifter from the output of the basic gate structure to the front as if the input is now configured as what would be the output of the preceding gate, wherein the output is the two level shifting resistors. The output of this innovation can now be realized as the lone follower transistor with its source node as the gate output. Additionally, one may leave intact the resistive level shifter on the new gate topography. A source-coupled to direct-coupled logic translator will be the result.
The nonlinear phenomena of signal beam saturation, pump beam depletion, and optically controlled coupling coefficient of two-beam interaction in photorefractive materials are analyzed. Applications of these phenomena to digital logic operations is discussed and supported by experimental results obtained in photorefractive BaTiO3.
The High Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. The HTIES team recently fabricated and demonstrated the first semiconductor digital logic gates ever to function at 600 C.
According to the invention, a digital design method for manipulating a digital circuit netlist is disclosed. In one step, a first netlist is loaded. The first netlist is comprised of first basic cells that are comprised of first kernel cells. The first netlist is manipulated to create a second netlist. The second netlist is comprised of second basic cells that are comprised of second kernel cells. A percentage of the first and second kernel cells are selection circuits. There is less chip area consumed in the second basic cells than in the first basic cells. The second netlist is stored. In various embodiments, the percentage could be 2% or more, 5% or more, 10% or more, 20% or more, 30% or more, or 40% or more.
A dc analog input can be used to produce an integrator with high dynamic range or a position servo with inherent stability. This is done by a switching system using digital-to-analog converters and an electronic switch to obtain the desired outputs.
Analytical design and testing of flip-flop and Nand gate for spacecraft electronic subsystems
An apparatus is provided that includes a first field effect transistor with a source tied to zero volts and a drain tied to voltage drain drain (Vdd) through a first resistor. The apparatus also includes a first node configured to tie a second resistor to a third resistor and connect to an input of a gate of the first field effect transistor in order for the first field effect transistor to receive a signal. The apparatus also includes a second field effect transistor configured as a unity gain buffer having a drain tied to Vdd and an uncommitted source.
Digital logic circuits for space vehicle logic systems for application in nonspace computer systems
The converter produces a linear analog signal that is linearly proportional to a shaft angle of a resolver over 360.degree.. An excitation cosine signal supplied to the resolver and a response cosine signal received from the output windings of the resolver are converted to logic level signals. Digital logic is performed on the logic level signals in a programmable digital logic device to produce a logic level pulse-width modulated signal. The logic level pulse-width modulated signal is used to control a switch to switch between two reference voltage levels to produce a pulse-width modulated signal, which is filtered and buffered to produce the linear analog signal.
The characteristics of the holographic logic computer are discussed. The holographic operation is reviewed from the Fourier transform viewpoint, and the formation of holograms for use in performing digital logic are described. The operation of the computer with an experiment in which the binary identity function is calculated is discussed along with devices for achieving real-time performance. An application in pattern recognition using neighborhood logic is presented.
Voice (analog) signal is converted to its digital equivalent and stored in solid state memory. Upon command, memory becomes part of annunciator system which includes other digital logic, digital-to-analog converter, and audio amplifier.
Prototype logic gates made of n-channel junction field-effect transistors (JFETs) and epitaxial resistors have been demonstrated, with a view toward eventual implementation of digital logic devices and systems in silicon carbide (SiC) integrated circuits (ICs). This development is intended to exploit the inherent ability of SiC electronic devices to function at temperatures from 300 to somewhat above 500 C and withstand large doses of ionizing radiation. SiC-based digital logic devices and systems could enable operation of sensors and robots in nuclear reactors, in jet engines, near hydrothermal vents, and in other environments that are so hot or radioactive as to cause conventional silicon electronic devices to fail. At present, current needs for digital processing at high temperatures exceed SiC integrated circuit production capabilities, which do not allow for highly integrated circuits. Only single to small number component production of depletion mode n-channel JFETs and epitaxial resistors on a single substrate is possible. As a consequence, the fine matching of components is impossible, resulting in rather large direct-current parameter distributions within a group of transistors typically spanning multiples of 5 to 10. Add to this the lack of p-channel devices to complement the n-channel FETs, the lack of precise dropping diodes, and the lack of enhancement mode devices at these elevated temperatures and the use of conventional direct coupled and buffered direct coupled logic gate design techniques is impossible. The presented logic gate design is tolerant of device parameter distributions and is not hampered by the lack of complementary devices or dropping diodes. In addition to n-channel JFETs, these gates include level-shifting and load resistors (see figure). Instead of relying on precise matching of parameters among individual JFETS, these designs rely on choosing the values of these resistors and of supply potentials so as to make the circuits perform the desired functions throughout the ranges over which the parameters of the JFETs are distributed. The supply rails V(sub dd) and V(sub ss) and the resistors R are chosen as functions of the distribution of direct-current operating parameters of the group of transistors used.
A design for a solid-state parasitic speed controller using digital logic was analyzed. Parasitic speed controllers are used in space power electrical generating systems to control the speed of turbine-driven alternators within specified limits. The analysis included the performance characteristics of the speed controller and the generation of timing functions. The speed controller using digital logic applies step loads to the alternator. The step loads conduct for a full half wave starting at either zero or 180 electrical degrees.
Digital Particle Image Velocimetry (DPIV) is an instantaneous, planar velocity measurement technique that is ideally suited for studying transient flow phenomena in high speed turbomachinery. DPIV is being actively used at the NASA Glenn Research Center to study both stable and unstable operating conditions in a high speed centrifugal compressor. Commercial PIV systems are readily available which provide near real time feedback of the PIV image data quality. These commercial systems are well designed to facilitate the expedient acquisition of PIV image data. However, as with any general purpose system, these commercial PIV systems do not meet all of the data processing needs required for PIV image data reduction in our compressor research program. An in-house PIV PROCessing (PIVPROC) code has been developed for reducing PIV data. The PIVPROC software incorporates fuzzy logic data validation for maximum information recovery from PIV image data. PIVPROC enables combined cross-correlation/particle tracking wherein the highest possible spatial resolution velocity measurements are obtained.