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Results for “digital atomic scale fabrication”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sources NASA NTRS DOE OSTI

DOE OSTI2020

Atomically precise digital e-beam lithography

Hydrogen Depassivation Lithography (HDL) is a version of electron beam lithography that uses scanning tunneling microscope (STM) instrumentation to expose a self–developing resist that is a monolayer of H chemisorbed to a Si (100) 2x1 H-passivated surface. Developed in the 1990s it has been largely a laboratory tool used in research for nanofabrication. Here, the technique is capable of atomic resolution, the ability to remove single H atoms from the Si surface and has much higher precision than the best conventional e-beam lithography can possibly achieve exposing polymeric resists. However, its most promising attribute is that it can be used as a digital fabrication tool and is the first of a class of nanofabrication techniques that can be considered digital atomic scale fabrication technologies. Digital Atomic Scale Fabrication can be shown to have similar advantages over analog fabrication techniques that digital information technology has over analog information technology.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2024

Progress Report for W911NF-23-1-0323: Development of Scalable Three-Dimensional Ion Traps for Quantum Information Processing

Trapped atomic ions are a promising platform for scalable quantum information processing. They lead in many key metrics such as single and two qubit gate fidelities, as well as quantum volume. We recently realized novel 3D ion traps with a high resolution 3D-printing process. The traps combine the scalability potential of surface chip traps with the superior trap performance of macroscopic 3D ion traps. Like photolithography, 3D-printing is a digitally defined process and hence allows for rapid iteration between design and fabrication. In contrast to photolithography, it also allows for fully defined 3D structures and, thus, is an ideal process to develop large, well-defined trap arrays with complex 3D electrode structures. Our current goal is to implement key procedures and perform critical measurements that justify incorporation of 3D-printed traps into large-scale quantum computing efforts. En route, we recently realized trapping in horizontal traps that are operating at cryogenic temperatures.

74 ATOMIC AND MOLECULAR PHYSICS↗

DOE OSTI2026

Advancements in NbTiN based circuits for Superconducting Digital Logic

Superconducting (SC) electronics have emerged as a promising platform for high-speed, energy-efficient computing and quantum information processing. This work, centered on NbTiN, presents recent advances in material science and fabrication methods leading to significant improvements in performance, scalability and vertical integration. We specifically report on fabrication and characterization of key components, including Josephson junctions (JJs), flux trapping structures and SC interconnects. Together, these efforts represent critical steps towards realizing practical, complex, dense and large-scale SC integrated circuits.

Pokhrel, A. [Imec,Heverlee,Belgium]↗

DOE OSTI2020

Scalable Substitutional Re‐Doping and its Impact on the Optical and Electronic Properties of Tungsten Diselenide

Abstract Reliable, controlled doping of 2D transition metal dichalcogenides will enable the realization of next‐generation electronic, logic‐memory, and magnetic devices based on these materials. However, to date, accurate control over dopant concentration and scalability of the process remains a challenge. Here, a systematic study of scalable in situ doping of fully coalesced 2D WSe 2 films with Re atoms via metal–organic chemical vapor deposition is reported. Dopant concentrations are uniformly distributed over the substrate surface, with precisely controlled concentrations down to <0.001% Re achieved by tuning the precursor partial pressure. Moreover, the impact of doping on morphological, chemical, optical, and electronic properties of WSe 2 is elucidated with detailed experimental and theoretical examinations, confirming that the substitutional doping of Re at the W site leads to n‐type behavior of WSe 2 . Transport characteristics of fabricated back‐gated field‐effect‐transistors are directly correlated to the dopant concentration, with degrading device performances for doping concentrations exceeding 1% of Re. The study demonstrates a viable approach to introducing true dopant‐level impurities with high precision, which can be scaled up to batch production for applications beyond digital electronics.

Kozhakhmetov, Azimkhan↗