Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “digital alloy”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Semiconductor-compatible topological digital alloys

Recently, GeSn alloys have attracted much interest for direct-gap infrared photonics and as potential topological materials which are compatible with the semiconductor industry. However, for photonics, the high-Sn content required leads to low detectivity, associated with poor material quality, and the (>35 %) Sn required for topological properties have been out of reach experimentally. Here, we demonstrate that by patterning the Sn distribution within Ge, the electronic properties have a far greater tunability than is possible with the random alloy. For the GeSn δ-digital alloy (DA) formed by confining Sn atoms in atomic layer(s) along the [111] direction of Ge, we show that ∼ 10 % Sn can lead to a triple-point semimetal. These findings are understood in terms of Sn ordering causing spatial separation of Sn and Ge band edges, leading to band inversion. This mechanism can also lead to a weak topological insulator, Weyl semimetal, and enables tunable direct bandgaps down to 2 meV, covering the entire infrared range. This DA induced topological properties are also identified in compound semiconductors, such as InAs 1-x Sb x , showing the general applicability of the DA design for realizing topological properties on conventional semiconductor platforms. Furthermore, our findings not only point to a new class of currently unexplored topological systems accessible by epitaxy, but also establish the promise of low-Sn GeSn DAs for application as infrared laser diodes and photodetectors in Si photonic integrated circuits and infrared image sensors.

3D topological semimetal↗
NASA NTRS2017

Evidence of Carrier Localization in InAsSb/InSb Digital Alloy nBn Detector

Recently we have demonstrated a novel method of extending the cut-off wavelength of InAsSb nBn detectors, by incorporating a series of monolayers of InSb. Here we study photoluminescence and minority carrier lifetime of this InAsSb/InSb digital alloy. While increasing temperature from 15 K to 40 K we show a 14 meV blue shift of the photoluminescence peak energy and a decrease in lifetime. This deviation from the expected Varshni empirical relation indicates strong carrier localization. We contrast to photoluminescence and lifetime results in bulk InAsSb. We discuss implications of this localization for design of digital alloy InAsSb/InSb nBn detectors.

Pepper, Brian J.↗
NASA NTRS2016

Digital Alloy Absorber for Photodetectors

In order to increase the spectral response range and improve the mobility of the photo-generated carriers (e.g. in an nBn photodetector), a digital alloy absorber may be employed by embedding one (or fraction thereof) to several monolayers of a semiconductor material (insert layers) periodically into a different host semiconductor material of the absorber layer. The semiconductor material of the insert layer and the host semiconductor materials may have lattice constants that are substantially mismatched. For example, this may performed by periodically embedding monolayers of InSb into an InAsSb host as the absorption region to extend the cutoff wavelength of InAsSb photodetectors, such as InAsSb based nBn devices. The described technique allows for simultaneous control of alloy composition and net strain, which are both key parameters for the photodetector operation.

Hill, Cory J.↗
NASA NTRS2017

Extended Cut-Off Wavelength nBn Detector Utilizing InAsSb/InSb Digital Alloy Absorber

We investigated a novel approach to extend a cut -off wavelength of Sb-based nBn detectors. We incorporated a series of single InSb monolayer into InAsSb bulk that allowed to realize a digital alloy absorber with an extended cut-off wavelength of λ = 4.6 μm at T = 200 K. The cut-off wavelength extension to 4.6μm is technologically important for realization of detectors covering CO2 absorption line at 4.26μm

InAsSb/InSb photodiodes↗
DOE OSTI2024

High Temperature Mechanical Behavior of Refractory Alloys with Digital Image Correlation

Gas turbine efficiency is typically limited by the maximum allowable temperature for components at the inlet side and in the hot gas flow. Refractory alloys and SiC/SiC ceramic-matrix composites (CMCs) are promising candidates for advancing operating temperatures beyond those of Ni-based alloys (>1200 °C). Refractory alloys are more suitable than SiC/SiC CMCs for dynamic components, due to the latter's low toughness and ductility. However, it is well known that refractory alloys suffer from poor oxidation behavior under service lifetimes and conditions, leading to embrittlement concerns. The ARPA-E ULTIMATE program has set out to combine new alloys with advanced coatings to mitigate oxidation/embrittlement effects, while increasing the mechanical performance benefits of refractory materials. Low oxygen (inert gas) or vacuum systems are needed to assess high temperature mechanical performance of developed alloys. To investigate the environmental sensitivity of candidate alloys and develop high temperature testing capabilities, four argon tensile frames were upgraded as well as a single vacuum system at Oak Ridge National Laboratory. Digital image correlation was incorporated into the vacuum frame allowing for surface strain determination and refined insight into thermomechanical response. Creep testing was performed at 1300 °C on two alloys, C-103 and MHC in vacuum and high purity argon environments. The Mo-based alloy showed less sensitivity to oxygen, indicating that testing in well-controlled argon environments may be suitable. The C-103 alloy demonstrated a stronger sensitivity to oxygen in the well-controlled argon environment, illustrating the need for the developed vacuum testing capabilities. “Small” 25 mm and “large” 76 mm MHC specimens showed comparable results in terms of strain rate during creep testing and ultimate tensile strength during tensile testing, suggesting the viability of smaller geometries that use less material of advanced developmental alloys.

Bell, Sam↗
DOE OSTI2025

High polarization InAlGaAs/AlGaAs photocathodes grown using MBE

Strained superlattices of GaAs/GaAsP grown using molecular beam epitaxy (MBE) have been used for more than 20 years to generate high polarization electron beams for nuclear physics. GaAs/GaAsP superlattices have several manufacturing challenges, including the thick graded layer required for the virtual GaAsP substrate, the significant difference in optimal growth temperatures for GaAs and GaAsP, and the scarcity of MBE systems using phosphorus. InAlGaAs/AlGaAs strained superlattice photocathode are an alternative structure that eliminates many of hurdles to growing GaAs/GaAsP in MBE systems. Measurements of quantum efficiency and polarization from InAlGaAs/AlGaAs will be presented. These include studies on a variety of growth parameters to optimize performance, including digital alloys, growth temperature variations, and variation in structure.

Stutzman, Marcy L↗
NASA NTRS1994

(abstract) Transmission Electron Microscopy of Al(sub x)Ga(sub 1-x)N/SiC Multilayer Structures

The potential of wide-band-gap III-V nitrides as solar-blind ultraviolet sensors and light emitters has prompted an increasing amount of work recently, including the fabrication of the first UV sensors from as-deposited single crystal GaN. We have used high resolution transmission electron microscopy (TEM) to study the microstructure of two novel developments of wide-band-gap III-V nitrides: the growth of ultra-short period GaN/AlN super lattices (digital alloys); and the incorporation of SiC layers into Al(sub x)Ga(sub 1-x)N structures. By varying the relative periods in a GaN/AlN superlattice, it should be possible to tailor the band gap of the composite to lie between the elemental values of 365 nm for GaN and 200 nm for AlN. The group IV semiconductor, SiC, has a close lattice match (< 3%) to Al(sub x)Ga(sub 1-x)N for growth on the basal plane. Demonstration of epitaxial growth for Al(sub x)Ga(sub 1-x)N/SiC multilayers could enable an extension of direct band-gap material towards the visible.

microscopy GaN AlN semiconductor SiC↗
NASA NTRSDate not supplied

Using Digital Image Correlation for Material Testing at Cryogenic Temperatures

Recent efforts were made to parametrize an aluminum alloy at cryogenic temperatures to calibrate finite element models simulating material deformation. Digital image correlation (DIC) was used to measure material properties using front/back strains of specimens during tensile tests. Data acquired from DIC was compared to physical extensometer measurements. Two camera pairs (front and back) were mounted via aluminum extrusion to the exterior of an environmental chamber of a hydraulic test stand. Images were taken through single-pane optical glass windows of the environment chamber. Positive pressure bags encased the cameras, attaching to the perimeter of the glass to keep out moisture and prevent windows from frosting. Figure 1 shows the environmental setup and the camera setup during cryogenic testing. Some of the challenges during testing at cryogenic temperatures include the gaseous flow of liquid nitrogen in the optical path of the mounted cameras, frost buildup on the windows as seen in Figure 1b, and frost on the test coupon. The temperature gradient present during the introduction of liquid nitrogen into the chamber can increase the projection error of images captured of the specimen. Figure 2 shows the estimated projection error from DIC as a function of temperature during the cool down process. This presentation addresses some of the concerns and observations when using DIC for testing at cryogenic temperatures using methods of isolated camera system and techniques for maintaining the glass panel clear from frost.

Joseph Cochran↗
NASA NTRS1997

Specific Volumes of the Zr(41.2)Ti(13.8)Cu(12.5)Ni(10.0)Be(22.5) Alloy in the Liquid, Glass, and Crystalline States

The specific volumes of the Zr(41.2)Ti(3.8)Cu(2.5)Ni(10.0)Be(22.5) alloy as a function of temperature, T, are determined by employing an image digitizing technique and numerical calculation methods applied to the electrostatically levitated spherical alloy. The linear fitting of the volumes of the alloy in the liquid, V(sub l), glass, V(sub g) and crystalline V(sub c), states in the temperature ranges shown in parentheses are V(sub l)(T) = 0.1583 + 8.877 x 10(exp -6) T(cu cm/g) (700-1300 K);V(sub g)(T) = 0.1603 + 5.528 x 10(exp -6) T (400-550 K);V(sub c)(T) = 0.1583 + 6.21 x 10(exp -6)T(400-850 K). The average volume thermal expansion coefficients within the temperature ranges are determined to be 5.32, 3.39. and 3.83 x 10(exp -5) (1/K) for the liquid, glass, and crystalline states, respectively.

Ohsaka, K.↗