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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Quantification of the effects of generation volume, surface recombination velocity, and diffusion length on the electron-beam-induced current and its derivative Determination of diffusion lengths in the low micron and submicron ranges

A systematic and quantitative analysis is carried out to investigate the effects of the shape (point, cube, Gaussian) and size of the generation volume, the surface recombination velocity, and the diffusion length on the electron-beam-induced current (EBIC) and its derivative (DEIC). Thick homogeneously doped samples exhibiting diffusion lengths in the low micron and submicron range are considered. The results are presented in computed EBIC curves as a function of scanning distance and of the ratio true diffusion length/effective diffusion length. Shown using these curves are: (1) a simple and yet rigorous method for the determination of the true diffusion length, taking into consideration all of the factors cited above, (2) a method for the rapid determination of the surface recombination velocity, (3) the condition under which the source shape becomes insignificant, and (4) a new value for the lower limit of the diffusion length which can be determined by the EBOC technique.

Luke, K. L.↗
NASA NTRS1996

The Influence of Spatial Variations of Diffusion Length on Charge Collected by Diffusion from Ion Tracks

Charge collected by diffusion from ion tracks in a semiconductor substrate may be influenced by the substrate diffusion length, which is related to recombination losses. A theoretical analysis shows that, excluding some extreme cases, charge collection is insensitive to spatial variations in the diffusion length funciton, so it is possible to define an effective diffusion length having the property that collected charge can be approximated by assuming a uniform diffusion length equal to this effective value.

SRAMs epi SRAMs ion tracks charge collection↗
NASA NTRS1990

Estimation of minority carrier diffusion lengths in InP/GaAs solar cells

Minority carrier diffusion length is one of the most important parameters affecting the solar cell performance. An attempt is made to estimate the minority carrier diffusion lengths is the emitter and base of InP/GaAs heteroepitaxial solar cells. The PC-1D computer model was used to simulate the experimental cell results measured at NASA Lewis under AMO (air mass zero) spectrum at 25 C. A 16 nm hole diffusion length in the emitter and a 0.42 micron electron diffusion length in the base gave very good agreement with the I-V curve. The effect of varying minority carrier diffusion lengths on cell short current, open circuit voltage, and efficiency was studied. It is also observed that the front surface recombination velocity has very little influence on the cell performance. The poor output of heteroepitaxial cells is caused primarily by the large number of dislocations generated at the interfaces that propagate through the bulk indium phosphide layers. Cell efficiency as a function of dislocation density was calculated and the effect of improved emitter bulk properties on cell efficiency is presented. It is found that cells with over 16 percent efficiencies should be possible, provided the dislocation density is below 10(exp 6)/sq cm.

Jain, R. K.↗
NASA NTRS1997

Effect of Crystal Defects on Minority Carrier Diffusion Length in 6H SiC Measured Using the Electron Beam Induced Current Method

We report values of minority carrier diffusion length in n-type 6H SiC measured using a planar Electron Beam Induced Current (EBIC) method. Values of hole diffusion length in defect free regions of n-type 6H SiC, with a doping concentration of 1.7El7 1/cu cm, ranged from 1.46 microns to 0.68 microns. We next introduce a novel variation of the planar method used above. This 'planar mapping' technique measured diffusion length along a linescan creating a map of diffusion length versus position. This map is then overlaid onto the EBIC image of the corresponding linescan, allowing direct visualization of the effect of defects on minority carrier diffusion length. Measurements of the above n-type 6H SiC resulted in values of hole diffusion length ranging from 1.2 micron in defect free regions to below 0.1 gm at the center of large defects. In addition, measurements on p-type 6H SiC resulted in electron diffusion lengths ranging from 1.42 micron to 0.8 micron.

Tabib-Azar, Massood↗
NASA NTRS1983

Multiwavelength analyzer for the determination of diffusion lengths

The minority carrier diffusion length Ln in the base or substrate region is an important parameter which governs a solar cell's performance. The present investigation is concerned with the development of a multiwavelength analyzer (MWA) technique for the nondestructive spatial testing of polycrystalline solar cells. The MWA method is based on the utilization of the short-circuit current generated by two or more light-emitting diodes (LEDs) operating at different wavelengths and modulated 180 deg out-of-phase. For a determination of Ln by the MWA technique, it is necessary to know the value of the absorption coefficient.

Stafsudd, O. M.↗
NASA NTRS2004

Measurement of N-Type 6H SiC Minority-Carrier Diffusion Lengths by Electron Bombardment of Schottky Barriers

Minority-Carrier diffusion lengths of n-type 6H-SiC were measured using the electron-beam induced current (EBIC) technique. Experimental values of primary beam current, EBIC, and beam voltage were obtained for a variety of SIC samples. This data was used to calculate experimental diode efficiency vs. beam voltage curves. These curves were fit to theoretically calculated efficiency curves, and the diffusion length and metal layer thickness were extracted. The hole diffusion length in n-6H SiC ranged from 0.93 +/- 0.15 microns.

Hubbard, S. M.↗
NASA NTRS1981

Effect of short wavelength illumination on the characteristic bulk diffusion length in ribbon silicon solar cells

The influence of short wavelength light on the characteristic bulk minority carrier diffusion length of the ribbon silicon photovoltaic cell has been investigated. We have measured the intensity and wavelength dependence of the diffusion length in an EFG ribbon cell, and compared it with a standard Czochralski grown silicon cell. While the various short wavelength illuminations have shown no influence on the diffusion length in the CZ cell, the diffusion lengths in the ribbon cell exhibit a strong dependence on the volume generation rate as well as on the wavelength of the superimposed lights. We have concluded that the trap-filling phenomenon at various depths in the bulk neutral region of the cell is consistent with the experimental observation.

Ho, C. T.↗
NASA NTRS1993

Diffusion length variation and proton damage coefficients for InP/In(x)Ga(1-x)As/GaAs solar cells

Indium phosphide solar cells are more radiation resistant than gallium arsenide and silicon solar cells, and their growth by heteroepitaxy offers additional advantages leading to the development of lighter, mechanically strong and cost-effective cells. Changes in heteroepitaxial InP cell efficiency under 0.5 and 3 MeV proton irradiations are explained by the variation in the minority-carrier diffusion length. The base diffusion length versus proton fluence is calculated by simulating the cell performance. The diffusion length damage coefficient K(L) is plotted as a function of proton fluence.

Jain, R. K.↗
NASA NTRS1993

Diffusion length variation in 0.5- and 3-MeV-proton-irradiated, heteroepitaxial indium phosphide solar cells

Indium phosphide (InP) solar cells are more radiation resistant than gallium arsenide (GaAs) and silicon (Si) solar cells, and their growth by heteroepitaxy offers additional advantages leading to the development of light weight, mechanically strong, and cost-effective cells. Changes in heteroepitaxial InP cell efficiency under 0.5- and 3-MeV proton irradiations have been explained by the variation in the minority-carrier diffusion length. The base diffusion length versus proton fluence was calculated by simulating the cell performance. The diffusion length damage coefficient, K(sub L), was also plotted as a function of proton fluence.

Jain, Raj K.↗
NASA NTRS1978

Diffusion lengths in amphoteric GaAs heteroface solar cells

Minority-carrier diffusion lengths in amphoteric GaAs:Si were investigated. Electron and hole diffusion lengths in p- and n-type, respectively, were determined to be 13 microns and 7 microns. Preliminary efficiency measurements on heteroface structures based on amphoteric GaAs:Si p-n junctions indicated that these devices should make excellent solar cells.

Ashley, K. L.↗
NASA NTRS1978

Lifetime and diffusion length measurements on silicon material and solar cells

Experimental methods were evaluated for the determination of lifetime and diffusion length in silicon intentionally doped with potentially lifetime-degrading impurities found in metallurgical grade silicon, impurities which may be residual in low-cost silicon intended for use in terrestrial flat-plate arrays. Lifetime measurements were made using a steady-state photoconductivity method. Diffusion length determinations were made using short-circuit current measurements under penetrating illumination. Mutual consistency among all experimental methods was verified, but steady-state photoconductivity was found preferable to photoconductivity decay at short lifetimes and in the presence of traps. The effects of a number of impurities on lifetime in bulk material, and on diffusion length in cells fabricated from this material, were determined. Results are compared with those obtained using different techniques. General agreement was found in terms of the hierarchy of impurities which degrade the lifetime.

Othmer, S.↗
DOE OSTI2023

Long carrier diffusion length in two-dimensional lead halide perovskite single crystals

Ruddlesden-Popper (RP) perovskites are two-dimensional semiconductors for high-performance optoelectronic devices. In this work, we report a long in-plane carrier diffusion length in 2D RP perovskite single crystals probed by scanning photocurrent microscopy. Carrier diffusion lengths of 7–14μm are observed when the number of PbI 6 –2 octahedra between organic spacers increases from 1 to 3. Using detailed light intensity and electric-field-dependent photocurrent measurements, we attribute the observed long diffusion length to the dominating dissociated free carrier transport. This is further validated by time-resolved photoluminescence measurements, where the decay lifetime increases in the presence of an electric field. From our experiments, we conclude that the in-plane transport in RP perovskites is efficient because of the partial free carrier generation, which overcomes strong excitonic effects. In conclusion, our results suggest that semiconducting devices fabricated from RP perovskite single crystals can be as efficient as their 3D counterparts.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1996

Diffusion lengths in irradiated N/P InP-on-Si solar cells

Indium phosphide (InP) solar cells were made on silicon (Si) wafers (InP/Si) by to take advantage of both the radiation-hardness properties of the InP solar cell and the light weight and low cost of Si wafers. The InP/Si cell application is for long duration and/or high radiation orbit space missions. Spire has made N/P InP/Si cells of sizes up to 2 cm by 4 cm with beginning-of-life (BOL) AM0 efficiencies over 13% (one-sun, 28C). These InP/Si cells have higher absolute efficiency and power density after a high radiation dose than gallium arsenide (GaAs) or silicon (Si) solar cells after a fluence of about 2e15 1 MeV electrons/sq. cm. In this work, we investigate the minority carrier (electron) base diffusion lengths in the N/P InP/Si cells. A quantum efficiency model was constructed for a 12% BOL AM0 N/P InP/Si cell which agreed well with the absolutely measured quantum efficiency and the sun-simulator measured AM0 photocurrent (30.1 mA/sq. cm). This model was then used to generate a table of AM0 photocurrents for a range of base diffusion lengths. AM0 photocurrents were then measured for irradiations up to 7.7e16 1 MeV electrons/sq. cm (the 12% BOL cell was 8% after the final irradiation). By comparing the measured photocurrents with the predicted photocurrents, base diffusion lengths were assigned at each fluence level. A damage coefficient K of 4e-8 and a starting (unirradiated) base electron diffusion length of 0.8 microns fits the data well. The quantum efficiency was measured again at the end of the experiment to verify that the photocurrent predicted by the model (25.5 mA/sq. cm) agreed with the simulator-measured photocurrent after irradiation (25.7 mA/sq. cm).

Wojtczuk, Steven↗
NASA NTRS1978

Characterization of nonideal silicon in terms of lifetime and diffusion length

Experimental methods have been evaluated for the determination of lifetime and diffusion length in silicon intentionally doped with potentially lifetime-degrading impurities which may be present in low-cost silicon intended for use in terrestrial flat-plate arrays. Results obtained with these methods have been compared for mutual consistency. The effects of a number of impurities on bulk lifetime were determined from steady-state photoconductivity, and solar cells fabricated from this material were characterized in terms of diffusion length using a penetrating light technique. Comparison was made with results obtained by others using photoconductivity decay. General agreement was found in terms of the hierachy of impurities to which the lifetime is sensitive. The utility of the steady-state photoconductivity method is established even in the presence of considerable trapping.

Othmer, S.↗
NASA NTRS1978

Method and apparatus for measuring minority carrier lifetimes and bulk diffusion length in P-N junction solar cells

Carrier lifetimes and bulk diffusion length are qualitatively measured as a means for qualification of a P-N junction photovoltaic solar cell. High frequency (blue) monochromatic light pulses and low-frequency (red) monochromatic light pulses were alternately applied to the cell while it was irradiated by light from a solar simulator, and synchronously displaying the derivative of the output voltage of the cell on an oscilloscope. The output voltage is a measure of the lifetimes of the minority carriers (holes) in the diffused N layer and majority carriers (electrons) in the bulk P material, and of the diffusion length of the bulk silicon. By connecting a reference cell in this manner with a test cell to be tested in reverse parallel, the display of a test cell that matches the reference cell will be a substantially zero output.

Vonroos, O. H.↗
NASA NTRS1978

Interpretation of scanning electron microscope measurements of minority carrier diffusion lengths in semiconductors

In scanning electron microscope (SEM) injection measurements of minority carrier diffusion lengths some uncertainties of interpretation exist when the response current is nonlinear with distance. This is significant in epitaxial layers where the layer thickness is not large in relation to the diffusion length, and where there are large surface recombination velocities on the incident and contact surfaces. An image method of analysis is presented for such specimens. A method of using the results to correct the observed response in a simple convenient way is presented. The technique is illustrated with reference to measurements in epitaxial layers of GaAs. Average beam penetration depth may also be estimated from the curve shape.

Flat, A.↗