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Dielectric relaxation of gases and sharp rise in microwave absorption coefficient in Cytherean atmosphere
The dielectric relaxation behavior of poly(acry1onitrile-co-methacrylonitrile) dispersed in a cured polydimethyl siloxane (PDMS) matrix as microcapsules was investigated over multiple thermal cycles and at varying concentrations. The copolymer microcapsules contained an isopentane core. In the PDMS matrix this copolymer displayed a pronounced relaxation signal at temperatures above the glass transition of the copolymers due to Maxwell-Wagner-Sillars (MWS) relaxation. The mechanism of MWS relaxation interpreted by the Havriliak-Negami and Kohlrausch-Williams-Watts relaxation functions was found to be very similar to previous studies of neat polyacrylonitrile and its copolymer. The activation energy of the relaxation decreased over successive thermal cycling coincident with a decreasing strength of the relaxation. These observations were attributed to the decreasing concentration of nitrile groups due to intramolecular cyclizations.
The dielectric relaxation behavior of poly(acrylonitrile-co-methacrylonitrile) dispersed in a cured polydimethyl siloxane (PDMS) matrix as microcapsules was investigated over multiple thermal cycles and at varying concentrations. The copolymer microcapsules contained an isopentane core. In the PDMS matrix this copolymer displayed a pronounced relaxation signal at temperatures above the glass transition of the copolymers due to Maxwell-Wagner-Sillars (MWS) relaxation. The mechanism of MWS relaxation interpreted by the Havriliak-Negami and Kohlrausch-Williams-Watts relaxation functions was found to be very similar to previous studies of neat polyacrylonitrile and its copolymer. The activation energy of the relaxation decreased over successive thermal cycling coincident with a decreasing strength of the relaxation. These observations were attributed to the decreasing concentration of nitrile groups due to intramolecular cyclizations.
Strontium titanates ceramics containing various trivalent rare earth ions, observing dielectric relaxation
In order to elucidate the nature of the imperfections which adversely affect pyroelectric processes in boracites, the thermal and dispersive characteristics of the low frequency dielectric response in iron-iodide boracite (Fe3B7O13I) and copper-chloride boracite (Cu3B7O13Cl) have been investigated. These characteristics were measured as a function of crystallographic orientation and applied field in both the ferroelectric and paraelectric states. The low frequency dielectric relaxation of 100 line oriented multi-domain copper-chloride boracite clearly indicates the dipole nature of the lattice imperfections. The activation energies calculated from a noninteracting Debye model, are 0.53 eV in the ferroelectric phase and 0.10 eV in the paraelectric phase.
Relaxations from anelastic and dielectric measurements of fused silica and soda-silica glasses at low temperatures ascribed to vibration modes exceeding Debye spectrum
The computational method described in this paper allows the calculation of the dielectric relaxation strength of an amorphous polymer based solely upon its chemical structure. The 4,4' oxydiphthalic anhydride (ODPA) dianhydride and bis-aminophenoxybenzene (APB) diamine based polyimides, (beta-CN) APB-ODPA and APB-ODPA were studied. Amorphous cells were constructed and then poled using molecular dynamics. Dielectric relaxation strengths of Delta(epsilon) = 17.8 for (beta-CN) APB-ODPA and Delta(epsilon) = 7.7 for APB-ODPA were predicted. These values are in excellent agreement with the experimental values. It was found that both the pendant nitrile dipole and the backbone anhydride residue dipole make significant contributions to the polyimides dielectric response. Specifically, it was shown that the difference in the magnitude of the dielectric relaxations is directly attributable to the nitrile dipole. The size of the relaxations indicate an absence of cooperative dipolar motions, The model was used to explain these results in terms of the average orientation of the nitrile and anhydride dipoles to within 51 deg. and 63 deg., respectively, of the applied electric field.
An amorphous piezoelectric polyimide containing polar functional groups has been developed using a combination of experimental and molecular modeling for potential use in high temperature applications. This amorphous polyimide, (Beta-CN)APB/ODPA, has exhibited good thermal stability and piezoelectric response at temperatures up to 150C. Density functional calculations predicted that a partially cured amic acid (open imide ring) possesses a dipole moment four times larger than the fully imidized closed ring. In situ poling and imidization of the partially cured (Beta-CN)APB/ODPA, was studied in an attempt to maximize the degree of dipolar orientation and the resultant piezoelectric response. A positive corona poling was used to minimize localized arcing during poling and to allow use of higher poling fields without dielectric breakdown. The dielectric relaxation strength, remanent polarization, and piezoelectric response were evaluated as a function of the poling profile. The partially cured, corona poled polymers exhibited higher dielectric relaxation strength (delta varepsilon), remanent polarization (Pr) and piezoelectric strain coefficient (d33) than the fully cured, conventionally poled ones.
A very sensitive thermal bath is designed to study the effect of temperature on the microwave dielectric response of a sample of nickel oxide and cobalt oxide. The sample under study is placed in a microwave resonant cavity in the TE(sub 011) mode. The perturbations of the electric field are recorded in terms of the frequency shifts and the width changes of the microwave resonant signal as seen on the oscilloscope. The real and imaginary parts of the dielectric constant are calculated by using the values of the frequency shifts and width changes in the Slater's perturbation equations. The dielectric behavior of nickel oxide and cobalt oxide and also their mixture is studied at a microwave frequency of 9.2 GHz as a function of temperature. A computer program is written to analyze the dielectric constant values at different temperatures. The resonant cavity seems to be very sensitive in studying the dielectric relaxation mechanism in these materials. The dielectric behavior is also analyzed using Debye's equations, and relaxation times for these materials are calculated at microwave frequencies.
Cole-Cole diagram in analysis of dielectric relaxation, giving correspondence to Deybe relaxation function
Shift of mechanical and dielectric relaxation maxima of polyvinyl chloride over wide range of frequency, temperature, and pressure, and extension of Eyring theory
An equivalent circuit model (ECM) approach is used to predict the scattering behavior of temperature-activated, electrically lossy dielectric layers. The total electrical response of the dielectric (relaxation + conductive) is given by the ECM and used in combination with transmission line theory to compute reflectance spectra for a Dallenbach layer configuration. The effects of thermally-activated relaxation processes on the scattering properties is discussed. Also, the effect of relaxation and conduction activation energy on the electrical properties of the dielectric is described.
A cylindrical microwave resonant cavity in TE(011) (Transverse Electric) mode is used to study the dielectric relaxation in germanium and silicon. The samples of these semiconductors are used to perturb the electric field in the cavity, and Slater's perturbation equations are used to calculate the real and imaginary parts of the dielectric constant. The dielectric loss of germanium and silicon is studied at different temperatures, and Debye's equations are used to calculate the relaxation time at these temperatures.
Dynamic Dielectric measurements made over a wide range of frequency provide a sensitive and convenient means for monitoring the cure process in thermosets and thermoplastics. The measurement of dielectric relaxation is one of only a few instrumental techniques available for studying molecular properties in both the liquid and solid states. Furthermore, it is probably the only convenient experimental technique for studying the polymerization process of going from a monomeric liquid of varying viscosity to a crosslinked, insoluble, high temperature solid. The objective of the research is to develop on-line dielectric instrumentation for quantitative nondestructive material evaluation and closed loop smart cure cycle control. The key is to relate the chemistry of the cure cycle process to the dielectric properties of the polymer system by correlating the time, temperature, and frequency dependent dielectric measurements with chemical characterization measurements. Measurement of the wide variation in magnitude of the complex permittivity with both frequency and state of cure, coupled with chemical characterization work, have been shown in the laboratory to have the potential to determine: resin quality, composition and age; cure cycle window boundaries; onset of flow and point of maximum flow; extent of and completion of reaction; evolution of volatiles; T sub g; and, crosslinking and molecular weight buildup.
A simulator of lunar permafrost at 100 K exhibits a dielectric relaxation centered at approximately 300 hertz. If permafrost exists in the moon between 100 and 213 K, it should present a relaxation peak at approximately 300 hertz. For temperatures up to 263 K it may go up to 20 kilohertz.
The dielectric response of permafrost at 100 K and vacuums of around 10 ntorr is analyzed, varying its percent ice content from 1 to 18.6. The distributions obtained correspond to dielectric relaxations of the Cole-Cole type, with maximum losses occurring in the 30- to 600-Hz frequency range. The logarithms of such maxima depend linearly on the permafrost ice content, two regions of linear variation being defined above and below 3.6% ice content. Such relations point out the feasibility of determining ice content in permafrost by electromagnetic means.
An oriented piezoelectric film incorporated in the insulator region of a silicon insulated-gate field-effect transistor (FET) results in a sensitive high-frequency strain transducer. Theory governing the transducer properties of the piezoelectric insulator FET transducer is presented. Equations are developed which relate the drain current of the device to induced polarizations of the piezoelectric layer. The highest frequency of surface strains to which the FET transducer can respond is determined by the FET frequency response - ultimately by the channel transit time. This frequency can extend to the GHz range. The low-frequency response to applied strain is determined by the dielectric relaxation frequency of the piezoelectric layer.
Measurements made on several doped-silicon detectors are reported. Topics discussed include: Si:Sb detector, the effects of detector bias on dielectric relaxation; characterization of spontaneous noise and gamma-induced spikes and their circumvention; and the time response of two detectors to step changes in the background photon flux density. Several potential system programs are indicated.