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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Mitigating ion migration in perovskite solar cells

The intrinsic ion migration in the metal halide perovskite absorber layer and its interfaces seriously limits the device stability of perovskite solar cells (PSCs). Despite considerable efforts to mitigate the ion migration issue, it remains a formidable challenge in the commercialization of PSCs. In this paper, we provide a short review of the device failure mechanisms induced by intrinsic ion migration and discuss the detrimental effects of ion migration on different component layers of PSCs. We outline the corresponding strategies to mitigate ion migration in PSCs and provide an insight on materials engineering to attain long-term stabilized perovskite photovoltaics.

14 SOLAR ENERGY↗
DOE OSTI2022

Overcoming Degradation Pathways to Achieve Stable Blue Perovskite Light-Emitting Diodes

Mixed halide (Br/Cl) perovskite nanocrystals (NCs) that represent an advanced blue emitter commonly suffer from spectral instability and poor lifespan; notably, the lack of understanding of the failure mechanisms of these devices has restricted the future progress. Here, we determine that the degradation of CsPbBr x Cl 3– x NCs containing blue light-emitting diodes (LEDs) is due to the combination of two effects. Cl – drift among adjoining NCs under an electric field is found to induce a Cl-deficient material region in multiple NC layers, which dominates the unstable electroluminescence and causes fast degradation in the corresponding devices. In comparison, the monolayer NC devices that feature restricted anion drift pathways exhibit better operational stability; however, excess hole injection is demonstrated to induce irreversible chlorine loss in NCs. Such a process that largely arises from electrochemical oxidation of Cl – initiates a mild device failure in operation of tens of minutes. Through revealing these mechanisms, we modulate the devices’ construction and operational conditions to achieve a longer lifespan.

14 SOLAR ENERGY↗
DOE OSTI2020

14 MeV DT Neutron Test Facility at the Sandia Ion Beam Laboratory

A recently completed LDRD project has provided a new facility at Sandia for testing effects of energetic neutrons on electronic components. 14 MeV neutrons are produced with a deuterium ion beam onto a thin-film tritide target. The goal of the project was to increase the neutron fluence to levels needed for radiation effects testing and qualification. This goal was achieved through two technical advances. First, a new multi-layer target concept was developed to reduce the rate of tritium loss from the target by isotope exchange, thereby reducing tritium usage and increasing target lifetime. The second advance was the construction of a new test chamber designed to maximize neutron flux at test locations. Together, these increased the available neutron fluence by several orders of magnitude. This new capability is being used in tests for Sandia nuclear weapon programs, evaluation of commercial parts such as highly-scaled CMOS SRAM lCs, and tests of new devices under development at Sandia such as lll-V HBTs, gallium nitride high-voltage diodes, and for fundamental studies of physical mechanisms of device failure.

36 MATERIALS SCIENCE↗
DOE OSTI2020

ENG 572 Final Report

Thermo-electric coolers (TECs) provide an essential function in many high-powered applications by diverting heat away from a temperature-sensitive load. This summer I have worked with Sandia National Laboratories in exploring the failure mechanisms behind said devices. I have been tasked with determining a plan of action for two TECs manufactured by two different companies labeled A and B respectively. Prior to my involvement in the project, the former has displayed failures during normal operation within its packaging. The latter was subsequently chosen to resolve these issues. Thermal cycling between the extreme expected operating temperatures (-40°C to 80°C) was applied to 5 unmounted TECAs over a period of 5 hours with 1-hour soaks at each extreme. The unmounted TECBs are currently undergoing the same process, and the task is expected to be completed over the next few weeks. The results of the TECA characterization have indicated no failure has occurred, which indicates that failure will need to be induced through either higher temperature extremes or additional mechanical stress.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

High Temperature Optocoupler for 3D High Density Power Modules

The goal of this proposed research is to develop a reliable high-temperature optocouplers, which can operate at 250°C with at least ten-year lifetime, and replace isolation transforms as the galvanic isolation solution for the 3D integration of high density power modules. The electrification of future transportations (i.e., electric vehicles) will continuously drive the demand for high density power modules. Optocouplers (i.e., packaged light emitter and detector) as a promising candidate to replace bulky isolation transformers are highly desirable to facilitate the continuous scale-down of gate driver circuitry that will lead to 3D high density power modules and achieve disruptive performance in terms of thermal management, power density, power efficiency, reliability and operating environments. However, regular semiconductor optoelectronic materials and devices have significant difficulty functioning in the harsh environments designated for high density power module usage (such as operation at high temperatures). Ultimately, it is not the intrinsic properties of power devices that prevent their use at higher temperatures, but rather the low voltage electronics needed to drive them and the packaging that surrounds them. The typical operating temperature for optocouplers is only up to 100°C, due to the limitations of light emitting diode (LED) devices inside and packaging materials. A systematic characterization methodology will be developed to analyze the performance, lifetime and reliability of LED devices and distinguish multiple failure mechanisms at high temperatures. An original methodology of “design for reliability” will be developed to design the optoelectronic devices with high reliability and long lifetime at high temperatures. A new architecture of high temperature high reliable optocouplers will be developed, fabricated and demonstrated with continuous operating at 250°C. The development of efficient, reliable high density 3D power modules is the foundation for energy efficiency and energy reliability. Enabled with advanced 3D integration and packaging technologies, high density power module solutions can achieve much more superior performance over the conventional discrete solutions in terms of efficiency, thermal management and power density. The proposed concept of high temperature optocouplers as the galvanic isolation solution for high density power modules will bring together interdisciplinary research involving the wide bandgap materials, optoelectronics, high reliable device design, electronics packaging and power modules. A streamline of skilled personnel would be trained including graduate and undergraduate students, local engineers and scientists which are in great demand to both academia and optoelectronics industry. The proposed research topics, such as, solid state lighting and high temperature device reliability, are currently of major interest at the Department of Energy, in particular, Sandia National Laboratories. This project can enhance collaborations between the University of Arkansas (UA) and Sandia National Laboratories. The findings of the proposed research are expected to be integrated into high density 3-D power modules at the Engineering Research Center for Power Optimization for Electro-Thermal Systems (POETS).

42 ENGINEERING↗
DOE OSTI2022

Automating Component-Level Stress Measurements for Inverter Reliability Estimation

In the near future, grid operators are expected to regularly use advanced distributed energy resource (DER) functions, defined in IEEE 1547-2018, to perform a range of grid-support operations. Many of these functions adjust the active and reactive power of the device through commanded or autonomous operating modes which induce new stresses on the power electronics components. In this work, an experimental and theoretical framework is introduced which couples laboratory-measured component stress with advanced inverter functionality and derives a reduction in useful lifetime based on an applicable reliability model. Multiple DER devices were instrumented to calculate the additional component stress under multiple reactive power setpoints to estimate associated DER lifetime reductions. A clear increase in switch loss was demonstrated as a function of irradiance level and power factor. This is replicated in the system-level efficiency measurements, although magnitudes were different—suggesting other loss mechanisms exist. Using an approximate Arrhenius thermal model for the switches, the experimental data indicate a lifetime reduction of 1.5% when operating the inverter at 0.85 PF—compared to unity PF—assuming the DER failure mechanism thermally driven within the H-bridge. If other failure mechanisms are discovered for a set of power electronics devices, this testing and calculation framework can easily be tailored to those failure mechanisms.

Flicker, Jack (ORCID:0000000212232154)↗
DOE OSTI2024

Chiral-structured heterointerfaces enable durable perovskite solar cells

Mechanical failure and chemical degradation of device heterointerfaces can strongly influence the long-term stability of perovskite solar cells (PSCs) under thermal cycling and damp heat conditions. Here, we report chirality-mediated interfaces based on R-/S-methylbenzyl-ammonium between the perovskite absorber and electron-transport layer to create an elastic yet strong heterointerface with increased mechanical reliability. This interface harnesses enantiomer-controlled entropy to enhance tolerance to thermal cycling–induced fatigue and material degradation, and a heterochiral arrangement of organic cations leads to closer packing of benzene rings, which enhances chemical stability and charge transfer. The encapsulated PSCs showed retentions of 92% of power-conversion efficiency under a thermal cycling test (-40°C to 85°C; 200 cycles over 1200 hours) and 92% under a damp heat test (85% relative humidity; 85°C; 600 hours).

14 SOLAR ENERGY↗
DOE OSTI2024

Synthesis, Processing, and Use of Isotopically Enriched Epitaxial Oxide Thin Films

Isotopic engineering has emerged as a key approach to study the nucleation, diffusion, phase transitions, and reactions of materials at an atomic level. It aims to uncover mass transport pathways, kinetics, and operational and failure mechanisms of functional materials and devices. Understanding these phenomena leads to deeper insights into important physical processes, such as the transport of ions in energy conversion and storage devices and the role of active sites and supports during heterogeneous catalytic reactions. Likewise, isotopic engineering is being pursued as a means of modifying functionality to enable future technological applications. In this Account, we summarize our recent work employing isotope labeling (e.g., 18 O 2 and 57 Fe) during thin film synthesis and postgrowth processing to reveal growth mechanisms, defect chemistry, and elemental diffusion under working and extreme conditions. Isotope-resolved analysis techniques with nanometer-scale spatial resolution, such as time-of-flight secondary ion mass spectrometry and atom probe tomography, facilitate the accurate quantification of isotopic placement and concentration in our well-defined heterostructures with precisely positioned, isotope-enriched layers. By measuring the nanometer-scale redistribution between natural abundance and isotopically enriched oxygen layers during the deposition of Fe 2 O 3 and Cr 2 O 3 by molecular beam epitaxy, we identified intermixing processes driven by surface adatoms occurring both at the film growth surface and within the first few layers below the surface. Further insights into synthesis mechanisms were gained by studying the tungsten oxide thin films grown by evaporating WO 3 powder in the presence of background 18 O 2 , revealing minimal incorporation of background oxygen during the film formation process. Thermal and radiation-enhanced diffusion in epitaxial Fe and Cr oxides were precisely tracked using 18 O and 57 Fe tracer layers incorporated into model epitaxial oxide thin films. This approach has allowed us to access thermal diffusion behavior at lower temperatures than previously measured, revealing a potential changeover in diffusion mechanism. Understanding radiation-enhanced diffusion in model oxides that represent the surface layers on the structural components of nuclear reactors informs our understanding of their corrosion behavior under irradiation. Isotopic labeling can also provide unique insights into the surface exchange reactions and defect chemistry of electrocatalysts. For instance, tracking the change in 18 O concentration at the surface of an epitaxial LaNiO 3 thin film after the electrocatalytic oxygen evolution reaction revealed the participation of lattice oxygen, confirming a hypothesis that had been proposed previously. Lastly, we highlight a new direction wherein we perform in situ processing studies utilizing isotopic tracers in conjunction with model epitaxial thin films within the atom probe tomography instrument. Additionally, this Account illustrates the great potential of isotopic engineering to enable fundamental mechanistic insights into physical processes and engineer functional properties in epitaxial films, heterostructures, and superlattices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Large scale polymer toughening of two-dimensional materials revealed by in situ TEM fracture tests and multiscale simulations

Two-dimensional (2D) materials offer significant potential for applications in energy-harvesting devices, batteries, sensors, and transistors. However, their intrinsic brittleness makes them prone to mechanical failure, limiting their practical use. In this work, we perform in situ transmission electron microscopy (TEM) fracture tests on monolayer MoSe2 and uncover an extrinsic toughening effect induced by an ultrathin adsorbed polystyrene adlayer. This adlayer substantially enhances the fracture resistance of the 2D flakes. Through a combination of molecular dynamics simulations and finite element analysis, we elucidate the molecular mechanism behind this toughening effect. Further, it arises from the active crack-bridging behavior of entangled polymer chains and the formation of a fracture process zone that stabilizes crack propagation and increases the energy required for crack extension. The proposed toughening mechanism offers a pathway to improving the mechanical reliability of 2D material-based devices by mitigating the risk of sudden failure.

2D materials↗
DOE OSTI2020

Stable Glasses of Organic Semiconductor Resist Crystallization

The instability of glassy solids poses a key limitation to their use in several technological applications. Well-packed organic glasses, prepared by physical vapor deposition (PVD), have drawn attention recently because they can exhibit significantly higher thermal and chemical stability than glasses prepared from more traditional routes. We show here that PVD glasses can also show enhanced resistance to crystallization. By controlling the deposition temperature, resistance toward crystallization can be enhanced by at least a factor of ten in PVD glasses of the model organic semiconductor Alq3 (tris(8-hydroxyquinolinato) aluminum). PVD glasses of Alq3 first transform into a supercooled liquid before crystallizing. By controlling the deposition temperature, we increase the glass → liquid transformation time thereby also increasing the overall time for crystallization. Furthermore, we thus demonstrate a new strategy to stabilize glasses of organic semiconductors against crystallization, which is a common failure mechanism in organic light emitting diode devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Thermal Performance of Perovskite-Based Photovoltaics for Operation in Low Earth Orbit

Perovskite-based photovoltaics are attractive for applications in space. The space environment is harsh with ionizing radiation, atomic oxygen, UV radiation, extreme temperatures, and thermal cycling. Herein, the thermal performance of perovskite active layer and perovskite photovoltaic devices in low earth orbit is analyzed. A 1 μm silicon oxide layer coupled with 500 nm zirconia thin film aid in cell thermal management is determined. The residual stresses between various layers in a device are modeled and it is proved that thermally induced mechanical failure of the perovskite (time > 460 years) is unlikely during operating lifetime of any mission. In conclusion, target power conversion efficiencies are also shared to manage maximum operating temperature of a perovskite-based device.

14 SOLAR ENERGY↗
DOE OSTI2020

Power Electronics Materials and Bonded Interfaces - Reliability and Lifetime

The emergence of wide-bandgap (WBG) devices in power electronics packages has brought significant attention to the reliability and thermal performance of the bonded interfaces. These interfaces, such as die-attach and substrate-attach, need to withstand the severe stress induced on them by the high-temperature (> 200°C) operation of the WBG devices. Sintered silver and transient liquid phase alloys are key bonded interfaces that can enable the high-temperature operation of WBG devices, however it is essential to evaluate their reliability and study the possible failure mechanisms before they can be used in power electronics packages. Sintered silver is already being adopted in commercial packages as a die-attach, but large-area substrate-attach offers additional reliability challenges. In this project, we investigate the reliability of these interface materials under accelerated thermal cycling and correlate these results with finite element simulations to develop lifetime prediction models. The failure mechanisms of these bonded interfaces are also studied.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Guided anisotropic oxygen transport in vacancy ordered oxides

Abstract Anisotropic and efficient transport of ions under external stimuli governs the operation and failure mechanisms of energy-conversion systems and microelectronics devices. However, fundamental understanding of ion hopping processes is impeded by the lack of atomically precise materials and probes that allow for the monitoring and control at the appropriate time- and length- scales. In this work, using in-situ transmission electron microscopy, we directly show that oxygen ion migration in vacancy ordered, semiconducting SrFeO 2.5 epitaxial thin films can be guided to proceed through two distinctly different diffusion pathways, each resulting in different polymorphs of SrFeO 2.75 with different ground electronic properties before reaching a fully oxidized, metallic SrFeO 3 phase. The diffusion steps and reaction intermediates are revealed by means of ab-initio calculations. The principles of controlling oxygen diffusion pathways and reaction intermediates demonstrated here may advance the rational design of structurally ordered oxides for tailored applications and provide insights for developing devices with multiple states of regulation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Advanced Perovskite Solar Cells and Modules

The “Advanced perovskite Cells and Modules” research project was the final agreement focused on enhancing perovskite solar cell (PSC) technologies funded by the US Department of Energy's Solar Energy Technologies Office. The project was designed to address three crucial areas in PSC development: stability, manufacturability, and efficiency. The project was then structured around three main tasks, each targeting one of these strategic goals. The team of experienced researchers in these materials worked collaboratively to address the targets outlined in the technical work plan. building on existing PSC research while also exploring promising new concepts arising in the field. An overview of each primary task is summarized below: Task 1 Stability: This first task, aims to identify material characteristics and metrics that can help predict the primary degradation mechanisms impacting PSC stability. This involved developing specific device tests based on hypotheses regarding mechanisms impacting stability, including fast failure procedures to speed up PSC development and improvement. Various strategies to enhance stability, like incorporating additives, post-treatments, novel contact materials etc. were developed using this fast feedback approach. The relationships between indoor and outdoor stresses were also validated. Task 2 Manufacturability: This second task, focused on creating a scalable production process for PSCs. Initially the objective is to establish a best-known method for a 182 cm2 minimodule. However, given resource limitations, these metrics were modified to focus on the other goal of outlined in the TWP. Specifically, this task worked to demonstrate the transferability of this best-known method to another research institution. Work scope in this area was expanded to material purity and understanding of reagent/process relationships. Examination of other difficulties in PSC production and potential solutions for large-scale production were also evaluated. Given challenges observed in process transfer, work to develop data infrastructure and recording tools for processing of material and devices was then also prioritized in this task. Task 3 Efficiency: This task was focused on improvements to PCE, while still considering Task 1 and Task 2 goal. The efforts targeted a PCE greater than 22% with a T95 exceeding 1000 hours at 25°C in a nitrogen environment for lab-scale devices (approximately 0.1 cm2 devices) across a range of solar-relevant perovskite compositions, including wide-gap (around 1.7 eV) and low-gap (around 1.3 eV) materials, using standard metal contacts. This work then provides a foundation for MHP-based tandem efforts undertaken in other projects and the All-MHP tandem efforts outlined in this projects TWP. Work in this project emphasized disseminating its findings through peer-reviewed publications (PRP), conference presentations, and industrial collaborations. Significant products were produced in all these areas, over 53 peer reviewed publications, 32 conference presentations and industrial investment based on NLR assistance on precompetitive challenges. The team also developed significant intellectual property and awards for their technical excellence, innovations and leadership. The team also leveraged traditional and social media platforms to engage with stakeholders and the public.

14 SOLAR ENERGY↗
DOE OSTI2020

Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs

An essential ruggedness of power devices is the capability of safely withstanding the surge energy. The surge ruggedness of the GaN high-electron-mobility transistor (HEMT), a power transistor with no or minimal avalanche capability, has not been fully understood. This article unveils the comprehensive physics associated with the surge-energy withstand process and the failure mechanisms of p-gate GaN HEMTs. Two commercial p-gate GaN HEMTs with Ohmic- and Schottky-type gate contacts are studied. Two circuits are developed to study the device surge ruggedness: an unclamped inductive switching circuit is first used to identify the withstand dynamics and failure mechanisms, and a clamped inductive switching circuit with a controllable parasitic inductance is then designed to mimic the surge energy in converter-like switching events. The p-gate GaN HEMT is found to withstand the surge energy through a resonant energy transfer between the device capacitance and the load/parasitic inductance rather than a resistive energy dissipation as occurred in the avalanche. If the device resonant voltage goes below zero, the device reversely turns on and the inductor is discharged. The device failure occurs at the transient of peak resonant voltage and is limited by the device overvoltage capability rather than the surge energy, dV/dt , or overvoltage duration. Almost no energy is dissipated in the resonant withstand process and the device failure is dominated by an electric field rather than a thermal runaway. Furthermore, these results provide critical understandings on the ruggedness of GaN HEMTs and important references for their qualifications and applications.

42 ENGINEERING↗
DOE OSTI2025

Electrochemical-Mechanical Coupling Strongly Affects the Performance of Nanopore, Thin-Film, and Solid-State Batteries

Here, the present study focuses on the electrochemical-mechanical (ECM) coupling effects of a thin-film, solid-state battery with only stiff, ceramic materials, in contrast to prior investigations that focus on individual active material particles or aggregations of particles. We model the impacts of ECM couplings including stress-transport and stress-equilibrium potential on the full-cell performance and potential mechanical failure modes of a thin-film battery conformally deposited in a nanopore scaffold, which is an experimentally achievable device. Model results indicate electrode volume changes due to lithium insertion or removal, along with mechanical boundary conditions, result in stress gradients that alter the lithium-ion flux, reduce lithium concentration gradients, and improve cell rate capability. However, the high stress levels in the cell can also lead to mechanics-related failure such as the separation of cell layers. For the parameter set in this work, stress-transport coupling has a much greater influence on rate capability than stress-potential coupling. Optimization of thin-film batteries to harness the benefits of ECM coupling effects requires leveraging geometric design and material selection. The current work underscores the need for further theoretical and experimental investigation into ECM coupling effects in thin-film batteries to enhance their understanding and design optimization.

25 ENERGY STORAGE↗
DOE OSTI2026

From Filamentary Failure to Durable Halide Perovskite Memristors

Halide perovskites have emerged as promising materials for memristive devices. While their pronounced electrochemical reactivity and fast ionic mobility enable numerous advantages including low-voltage operation and fast switching, the same features also render perovskite-based memristors vulnerable to metallic shunts and poor endurance, limiting their practical applications. Here, we elucidate both the resistive switching and failure mechanisms in perovskite memristors with a fluorine-doped tin oxide (FTO)/methylammonium lead triiodide (MAPbI3)/Ag structure and demonstrate a strategy to substantially enhance device durability. As opposed to commonly invoked filamentary mechanisms, electrical, structural, and spectroscopic analyses reveal that resistive switching arises from interfacial barrier modulation by reversible Ag redox reactions that drive electrochemical doping/dedoping within the perovskite. Device failure, however, originates from metallic Ag0 filamentation that ultimately forms permanent conductive pathways. Introducing an ultrathin Al2O3 interlayer at the inert-electrode interface improves device endurance by more than 30-fold, exceeding 15,000 switching cycles, without compromising other performance metrics. Interfacial characterization indicates that the Al2O3 layer modifies wettability of Ag deposits, promoting planar island growth rather than through-film filamentation. These findings establish a clear link between interfacial electrochemistry, metal precipitation behavior, and memristor reliability, highlighting inert-electrode interfacial engineering as an effective pathway toward durable perovskite-based memristors.

14 SOLAR ENERGY↗