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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

Electrical characterization of 6H crystalline silicon carbide

Crystalline silicon carbide (SiC) substrates and epilayers, undoped as well as n- and p-doped, have been electrically characterized by performing Hall effect and resistivity measurements (van der Pauw) over the temperature range of approximately 85 K to 650 K (200 K to 500 K for p-type sample). By fitting the measured temperature dependent carrier concentration data to the single activation energy theoretical model: (1) the activation energy for the nitrogen donor ranged from 0.078 eV to 0.101 eV for a doping concentration range of 10(exp 17) cm(exp -3) to 10(exp 18) cm(exp -3) and (2) the activation energy for the aluminum acceptor was 0.252 eV for a doping concentration of 4.6 x 10(exp 18) cm(exp -3). By fitting the measured temperature dependent carrier concentration data to the double activation energy level theoretical model for the nitrogen donor: (1) the activation energy for the hexagonal site was 0.056 eV and 0.093 eV corresponding to doping concentrations of 3.33 x 10 (exp 17) cm(exp -3) and 1.6 x 10(exp 18) cm(exp -3) and (2) the activation energy for the cubic site was 0.113 and 0.126 eV corresponding to doping concentrations of 4.2 x 10(exp 17) cm(exp -3) and 5.4 x 10(exp 18) cm(exp -3).

Lempner, Stephen E.↗
NASA NTRS1985

Proceedings of the Flat-plate Solar Array Project Research Forum on High-efficiency Crystalline Silicon Solar Cells

The high-efficiency crystalline silicon solar cells research forum addressed high-efficiency concepts, surface-interface effects, bulk effects, modeling and device processing. The topics were arranged into six interactive sessions, which focused on the state-of-the-art of device structures, identification of barriers to achieve high-efficiency cells and potential ways to overcome these barriers.

Kachare, R.↗
NASA NTRS1985

Structural defects in crystalline silicon

The basic photovoltaic properties of a given crystalline silicon specimen seem to be governed by density and nature of two to three dimensional lattice defects. These are mainly generated by primary growth conditions as grain boundaries of more or less intrinsic character or second phase precipitates from supersaturated solutions of carbon or oxygen. Considerably high values of both solubility and diffusivity in connection with their abundance in common refractory material systems account for the predominance of the two particular elements. Unsaturated dislocations of different types very often can be seen as a consequence of the existence of more dimensional defects as described initially. The final performance of a solar cell is dependent of the concentration and distribution of recombination active centers in the different regions of this device. Typical representatives are fast diffusing transition metals in form of either single atoms or simple complexes. Their avoidance, annihilation, or removal is of great concern in different fields of electronic materials development.

Sirtl, E.↗
NASA NTRS1984

High-efficiency crystalline silicon technology development

The rationale for pursuing high efficiency crystalline silicon technology research is discussed. Photovoltaic energy systems are reviewed as to their cost effectiveness and their competitiveness with other energy systems. The parameters of energy system life are listed and briefly reviewed.

Prince, M. B.↗
NASA NTRS1985

Studies of the nature of interfacial barriers in high efficiency crystalline silicon solar cells

The effects of interfacial barriers in crystalline silicon solar cells were studied. The effort was directed toward the investigation and use of such techniques as Angular Resolved Parameter Spectroscopy (ARAPS) and Impedance Spectroscopy in initially characterizing n-type Si doped to levels commonly used for n+p solar cells, and eventually Si solar cells. The objectives of the research are given. Those accomplished are detailed, as are recommendations for future work.

Bates, Clayton W., Jr.↗
NASA NTRS1986

High efficiency crystalline silicon solar cells

The factors which may limit current crystalline silicon solar cells to less than 20 percent efficiency at AM 1 are investigated together with the factors which may limit the ultimate efficiency achievable. It was found that base recombination at residual defect and impurity recombination centers was the likely cause of the 20-percent efficiency barrier. Suggestions for design changes that would cut the losses due to recombinations are presented.

Sah, C. T.↗
NASA NTRS1985

Crystalline-silicon reliability lessons for thin-film modules

The reliability of crystalline silicon modules has been brought to a high level with lifetimes approaching 20 years, and excellent industry credibility and user satisfaction. The transition from crystalline modules to thin film modules is comparable to the transition from discrete transistors to integrated circuits. New cell materials and monolithic structures will require new device processing techniques, but the package function and design will evolve to a lesser extent. Although there will be new encapsulants optimized to take advantage of the mechanical flexibility and low temperature processing features of thin films, the reliability and life degradation stresses and mechanisms will remain mostly unchanged. Key reliability technologies in common between crystalline and thin film modules include hot spot heating, galvanic and electrochemical corrosion, hail impact stresses, glass breakage, mechanical fatigue, photothermal degradation of encapsulants, operating temperature, moisture sorption, circuit design strategies, product safety issues, and the process required to achieve a reliable product from a laboratory prototype.

Ross, R. G., Jr.↗
NASA NTRS1986

Use of low-energy hydrogen ion implants in high-efficiency crystalline-silicon solar cells

The use of low-energy hydrogen implants in the fabrication of high-efficiency crystalline silicon solar cells was investigated. Low-energy hydrogen implants result in hydrogen-caused effects in all three regions of a solar cell: emitter, space charge region, and base. In web, Czochralski (Cz), and floating zone (Fz) material, low-energy hydrogen implants reduced surface recombination velocity. In all three, the implants passivated the space charge region recombination centers. It was established that hydrogen implants can alter the diffusion properties of ion-implanted boron in silicon, but not ion-implated arsenic.

Fonash, S. J.↗
NASA NTRS1985

Use of low energy hydrogen ion implants in high efficiency crystalline silicon solar cells

This program is a study of the use of low energy hydrogen ion implantation for high efficiency crystalline silicon solar cells. The first quarterly report focuses on two tasks of this program: (1) an examination of the effects of low energy hydrogen implants on surface recombination speed; and (2) an examination of the effects of hydrogen on silicon regrowth and diffusion in silicon. The first part of the project focussed on the measurement of surface properties of hydrogen implanted silicon. Low energy hydrogen ions when bombarded on the silicon surface will create structural damage at the surface, deactivate dopants and introduce recombination centers. At the same time the electrically active centers such as dangling bonds will be passivated by these hydrogen ions. Thus hydrogen is expected to alter properties such as the surface recombination velocity, dopant profiles on the emitter, etc. In this report the surface recombination velocity of a hydrogen emplanted emitter was measured.

Fonash, S. J.↗
NASA NTRS1984

The future of crystalline silicon technology in the US Department of Energy program

Two basic findings were presented in the outlined report. The first is that silicon has a very high potential efficiency, demonstrated improvement in reliability and a significant potential for cost reductions. The second is that the photovoltaic technology development process is highly uncertain, but crystalline silicon technology has a substantial knowledge base to draw from, improving its chances of success. Several issues to be addressed are outlined.

Scolaro, A. F.↗
NASA NTRS1986

High efficiency crystalline silicon solar cells

A review of the entire research program since its inception ten years ago is given. The initial effort focused on the effects of impurities on the efficiency of silicon solar cells to provide figures of maximum allowable impurity density for efficiencies up to about 16 to 17%. Highly accurate experimental techniques were extended to characterize the recombination properties of the residual imputities in the silicon solar cell. A numerical simulator of the solar cell was also developed, using the Circuit Technique for Semiconductor Analysis. Recent effort focused on the delineation of the material and device parameters which limited the silicon efficiency to below 20% and on an investigation of cell designs to break the 20% barrier. Designs of the cell device structure and geometry can further reduce recombination losses as well as the sensitivity and criticalness of the fabrication technology required to exceed 20%. Further research is needed on the fundamental characterization of the carrier recombination properties at the chemical impurity and physical defect centers. It is shown that only single crystalline silicon cell technology can be successful in attaining efficiencies greater than 20%.

Sah, C. Tang↗
NASA NTRS2018

Astronomical X-Ray Optics Using Mono-Crystalline Silicon: High Resolution, Light Weight, and Low Cost

X-ray astronomy critically depends on X-ray optics. The capability of an X-ray telescope is largelydetermined by the point-spread function (PSF) and the photon-collection area of its mirrors, the same astelescopes in other wavelength bands. Since an X-ray telescope must be operated above the atmosphere inspace and that X-rays reflect only at grazing incidence, X-ray mirrors must be both lightweight and thin, bothof which add significant technical and engineering challenge to making an X-ray telescope. In this paper wereport our effort at NASA Goddard Space Flight Center (GSFC) of developing an approach to making an Xraymirror assembly that can be significantly better than the mirror assembly currently flying on the ChandraX-ray Observatory in each of the three aspects: PSF, effective area per unit mass, and production cost per uniteffective area. Our approach is based on the precision polishing of mono-crystalline silicon to fabricate thinand lightweight X-ray mirrors of the highest figure quality and micro-roughness, therefore, having thepotential of achieving diffraction-limited X-ray optics. When successfully developed, this approach will makeimplementable in the 2020s and 2030s many X-ray astronomical missions that are currently on the drawingboard, including sounding rocket flights such as OGRE, Explorer class missions such as STAR-X andFORCE, Probe class missions such as AXIS, TAP, and HEX-P, as well as large missions such as Lynx.

Zhang, William W.↗
NASA NTRS1977

Ionization induced damage in crystalline silicon

Close examination of the interaction of the energetic knock-on atoms with the local lattice environment reveals a damage mechanism which does satisfy the experimental data on proton irradiation of silicon. A proton-atom interaction with high energy transfer is considered where the proton path is delineated by a trail of ionization, and the silicon ion path is characterized by much heavier ionization terminating in a dense displacement cluster. At collision, many of the silicon electrons are stripped off, and the resulting energetic ion subsequently loses energy rapidly by Coulomb interaction with bound electrons. The rate of energy loss depends on the charge state and velocity of the knock-on ion. For ion energies in excess of 1 MeV, the intensity of ionization is sufficient to permit lattice atoms, stripped of their binding electrons, to reorient randomly before having an opportunity to recombine with electrons and re-establish the lattice. The path of a knock-on ion thus becomes a thin cylinder of amorphous material within the crystal. Amorphous silicon has a Fermi level closer to mid-band than does single crystal silicon, and a strong field therefore, results around this damaged region. The field produces a large depletion region, representing a very large capture cross section for minority carriers.

Meulenberg, A., Jr.↗
NASA NTRS1986

Crystalline-silicon photovoltaics summary module design and reliability

The evolution of the design and reliability of solar modules was described. Design requirements involved 14 different considerations, including residential building and material electrical codes, wind-loading, hail impact, operating temperature levels, module flammability, and interfaces for both the array structure and the operation of the system. Reliability research involved in diverse investigations including glass-fracture strength, soiling levels, electrochemical corrosion, and bypass-diode qualification tests. Based on these internationally recognized studies, performance assessments, and failure analyses, the Flat-plate Solar Array Project in its 11-year duration served to nuture the development of 45 different solar module designs from 15 PV manufacturers.

Ross, R. G., Jr.↗
NASA NTRS1985

Crystalline-silicon reliability lessons for thin-film modules

Key reliability and engineering lessons learned from the 10-year history of the Jet Propulsion Laboratory's Flat-Plate Solar Array Project are presented and analyzed. Particular emphasis is placed on lessons applicable to the evolving new thin-film cell and module technologies and the organizations involved with these technologies. The user-specific demand for reliability is a strong function of the application, its location, and its expected duration. Lessons relative to effective means of specifying reliability are described, and commonly used test requirements are assessed from the standpoint of which are the most troublesome to pass, and which correlate best with field experience. Module design lessons are also summarized, including the significance of the most frequently encountered failure mechanisms and the role of encapsulant and cell reliability in determining module reliability. Lessons pertaining to research, design, and test approaches include the historical role and usefulness of qualification tests and field tests.

Ross, Ronald G., Jr.↗
NASA NTRS1987

The economic payoff for a state-of-the-art high-efficiency flat-plate crystalline silicon solar cell technology

In 1986 during the flat-plate solar array project, silicon solar cells 4.0 sq cm in area were fabricated at the Jet Propulsion Laboratory (JPL) with a conversion efficiency of 20.1 percent (AM1.5-global). Sixteen cells were processed with efficiencies measuring 19.5 percent (AM1.5 global) or better. These cells were produced using refined versions of conventional processing methods, aside from certain advanced techniques that bring about a significant reduction in a major mechanism (surface recombination) that limits cell efficiency. Wacker Siltronic p-type float-zone 0.18-ohm-cm wafers were used. Conversion efficiencies in this range have previously been reported by other researchers, but generally on much smaller (0.5 vs. 4.0 cm) devices which have undergone sophisticated and costly processing steps. An economic analysis is presented of the potential payoffs for this approach, using the Solar Array Manufacturing Industry Costing Standards (SAMICS) methodology. The process sequence used and the assumptions made for capturing the economies of scale are presented.

Bickler, Donald B.↗