Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “cryogenically-cooled converter”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

4 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2019

Characterization and Failure Analysis of 650 V Enhancement-Mode GaN HEMT for Cryogenically-Cooled Power Electronics

In order to evaluate the feasibility of newly developed GaN devices in a cryogenically-cooled converter, this paper characterizes a 650 V enhancement-mode Gallium-Nitride high-electron-mobility transistor (GaN HEMT) at cryogenic temperatures. The characterization includes both static and dynamic behaviors. The results show that this GaN HEMT is an excellent device candidate to be applied in cryogenic-cooled applications. For example, transconductance at cryogenic temperature (93 K) is 2.5 times higher than one at room temperature (298 K), and accordingly, peak di/dt during turn-on transients at cryogenic temperature is around 2 times of that at room temperature. Moreover, the on-resistance of the channel at cryogenic temperature is only one-fifth of that at room temperature. The corresponding explanations of performance trends at cryogenic temperatures are also given from the view of semiconductor physics. In addition, several device failures were observed during the dynamic characterization of GaN HEMTs at cryogenic temperatures. The ultra-fast switching speed induced high di/dt and dv/dt at cryogenic temperatures amplifies the negative effects of parasitics inside the switching loop. Based on failure waveforms, two failure modes were classified, and detailed failure mechanisms caused by ultra-fast switching speed are given in this paper.

Static and dynamic characterization↗
DOE OSTI2021

SiC and GaN Devices With Cryogenic Cooling

This article presents the cryogenically cooled application for wide bandgap (WBG) semiconductor devices. Characteristics of silicon carbide (SiC) and gallium nitride (GaN) at cryogenic temperatures are illustrated. SiC MOSFETs exhibit increased on-state resistance and slower switching speed at cryogenic temperatures. However, cryogenic cooling provides low ambient temperature environment and thus enables the SiC converter to operate at lower junction temperature to achieve higher efficiency compared to room temperature cooling. A cryogenically cooled MW-level SiC inverter prototype is developed and demonstrated the feasibility of operating high-power SiC converter with cryogenic cooling. GaN HEMTs exhibit more than five times on-state resistance reduction and faster switching speed at cryogenic temperatures which makes GaN HEMTs an excellent candidate for cryogenic power electronics applications. The significantly reduced on-state resistance of GaN devices provides the possibility to operate them at a current level much higher than rated current at cryogenic temperatures. A GaN double pulse test (DPT) circuit is constructed and demonstrated that GaN HEMTs can operate at nearly four times of rated current at cryogenic temperatures. Challenges of utilizing WBG device with cryogenic cooling are discussed and summarized.

42 ENGINEERING↗
NASA NTRSDate not supplied

A Cryogenically-Cooled MW Inverter for Electric Aircraft Propulsion

Power electronic converter will be a key enabler for future electrified aircraft propulsion system. In aircraft applications, superconducting technologies such as superconducting motors and generators along with supporting power systems will grow in importance. Utilizing cryogenic cooling for power converter potentially can significantly improve the inverter system efficiency and specific power. This paper presents the cooling, hardware,and testing of a cryogenically-cooled MW inverter developed for electrified aircraft propulsion system. The 1 MVA full load testing with cryogenic cooling is demonstrated. The developed inverter system achieves 18 kVA/kg specific power and 99% efficiency, which provides a promising solution to achieve high power density and efficiency for future electrified aircraft propulsion system.

cryogenically-cooled inverter↗
NASA NTRS1978

Low-noise receivers: S-band parametric up converter development

The combination of a cryogenically-cooled parametric upconverter and a higher frequency maser post amplifier was proposed as a method of achieving maser-like receiver noise temperatures over much larger instantaneous bandwidths and tuning ranges than are presently obtainable with masers in the range of 1 to 18 GHz. An experimental 2.0- to 2.5-GHz parametric upconverter/maser system was developed to explore these possibilities. Initial tests of this system resulted in an effective input noise temperature of 3.1 K at 2295 MHz and 3.2 K at 2388 MHz. The parametric upconverter logged over 1500 hours at 4.5 K and underwent 5 thermal cycles (300 K to 4.5 K to 300 K) without degradation.

Petty, S.↗