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At least 19 records

Metallic copper in ordinary chondrites

Metallic Cu of moderately high purity (approximately 985 mg/g Cu, approximately 15 mg/g Ni) occurs in at least 66% of ordinary chondrites (OC) as heterogeneously distributed, small (typically less than or equal to 20 micrometers) rounded to irregular grains. The mean modal abundance of metallic Cu in H, L and LL chondrites is low: 1.0 to 1.4 x 10(exp -4) vol%, corresponding to only 4 - 5 % of the total Cu in OC whole rocks. In more than 75% of the metallic-Cu-bearing OC, at least some metallic Cu occurs at metallic-Fe-Ni-troilite grain boundaries. In some cases it also occurs within troilite, within metallic Fe-Ni, or at the boundaries these phases form with silicates or chromite. Ordinary chondrites that contain a relatively large number of occurrences of metallic Cu/sq mm have a tendency to have experienced moderately high degrees of shock. Shock processes can cause local melting and transportation of metallic Fe-Ni and troilte; because metallic Cu is mainly associated with these phases, it also gets redistributed during shock events. In the most common petrographic assemblage containing metallic Cu, the Cu is adjacent to small irregular troilite grains surrounded by taenite plus tetrataenite; this assemblage resembles fizzed troilite and may have formed by localized shock melting or remelting of a metal-troilite assemblage.

Rubin, Alan E.↗

Iron-copper metallization for flexible solar/cell arrays

The feasibility of a copper-base metallization for shallow-junction cells applied in flexible solar arrays in space is discussed. This type of metallization will reduce usage of precious metals (such as silver), increase case of bonding (by welding or by soldering) and eliminate heavy high Z interconnects (such as molybdenum). The main points of concern are stability against thermally induced diffusion of copper into silicon which causes degradation of shallow cell junctions, and low series resistance of the contact with semiconductor which promotes cell efficiency.

Lavendel, H. W.↗

Development of technique for AR coating and nickel and copper metallization of solar cells. FPS Project: Product development

Printed nickel overplated with copper and applied on top of a predeposited silicon nitride antireflective coating system for metallizing solar cells was analyzed. The ESL D and E paste formulations, and the new formulations F, G, H, and D-1 were evaluated. The nickel thick films were tested after firing for stability in the cleaning and plating solutions used in the Vanguard-Pacific brush plating process. It was found that the films are very sensitive to the leaning and alkaline copper solutions. Less sensitivity was displayed to the neutral copper solution. Microscopic and SEM observations show segregation of frit at the silicon nitride thick film interface with loose frit residues after lifting off plated grid lines.

Taylor, W.↗

Development of technique for air coating and nickel and copper metalization of solar cells

Solar cells were made with a variety of base metal screen printing inks applied over silicon nitride AR coating and copper electroplated. Fritted and fritless nickel and fritless tin base printing inks were evaluated. Conversion efficiencies as high as 9% were observed with fritted nickel ink contacts, however, curve shapes were generally poor, reflecting high series resistance. Problems encountered in addition to high series reistance included loss of adhesion of the nickel contacts during plating and poor adhesion, oxidation and inferior curve shapes with the tin base contacts.

Source record↗

Development of technique for AR coating and nickel and copper metallization of solar cells: FPS project, product development

Silicon nitride and nickel pastes are investigated in conjunction with a brush copper plating process for the purpose of identifying one or more fabrication sequences which yield at least 10 percent efficient N(+)/P(+) flat plate solar cells. The adhesion of all nickel pastes is reduced significantly when subjected to acidic and alkaline brush copper plating solutions as a result of a combination of thermally induced stress and chemical attack of the frit, which occurs at the interface with the silicon solar cell. The AgF is penetrating the 800 a of Si3N4 and ohmic contact is occurring at all fire-in tempertures. During the brush plating process, fingers and buss bars tend to spread.

Rominger, C. G.↗

Development of technique for AR coating nickel and copper metallization of solar cells FPS project product development

Experimental matrices were conducted to determine a suitable firing schedule for fritless tin printing ink. considerable difficulties were encountered with oxidation. Best results were obtained with a firing cycle consisting of 400 C for 20 minutes in nitrogen followed by 5 minutes in air at 500 C. Elimination of oxidizing conditions impaired the adhesion of both tin and copper fritless printing inks, although adhesion of fritless copper inks was obtained when fired in nitrogen with slight oxidation.

Taylor, W.↗

Optical properties of ion beam textured metals

Copper, silicon, aluminum, titanium and 316 stainless steel were textured by 1000 eV xenon ions from an 8 cm diameter electron bombardment ion source. Simultaneously sputter-deposited tantalum was used to facilitate the development of the surface microstructure. Scanning electron microscopy of the ion textured surfaces revealed two types of microstructure. Copper, silicon, and aluminum developed a cone structure with an average peak-to-peak distance ranging from 1 micron for silicon to 6 microns for aluminum. Titanium and 316 stainless steel developed a serpentine ridge structure. The average peak-to-peak distance for both of these materials was 0.5 micron. Spectral reflectance was measured using an integrating sphere and a holraum reflectometer. Total reflectance for air mass 0 and 2, solar absorptance and total emittance normalized for a 425 K black body were calculated from the reflectance measurements.

Hudson, W. R.↗

Optical properties of ion beam textured metals

Copper, silicon, aluminum, titanium and 316 stainless steel were textured by 1000 eV xenon ions from an 8-cm diameter electron bombardment ion source. Copper, silicon, and aluminum developed a cone structure with an average peak-to-peak distance ranging from 1 micron for silicon to 6 microns for aluminum. Titanium and 316 stainless steel developed a serpentine ridge structure. The average peak-to-peak distance for both of these materials was 0.5 micron. Total reflectance for air mass 0 and 2, solar absorptance, and total emittance, normalized for a 425 K black body were calculated from the reflectance measurements. All materials had solar absorptances between 0.93 (stainless steel) and 0.97 (silicon and aluminum). Total emittance values of 0.75, 0.80, and 0.85 for Si, Al, and Cu, respectively, resulted in a solar absorptance/total emittance ratio of approximately 1.2. Titanium and 316 stainless steel had values of 2.6 and 2.9, respectively, for this ratio.

Hudson, W. R.↗

Electrodes for solid state devices

The invention relates to coated metal powders and to dispersions of such powders in liquid vehicles forming screenable, sinterable pastes for use in forming electrodes on photovoltaic devices. The primary nickel or copper metal particles are provided with a carrier of lower melting sintering metals such as 1-20% by weight, of a non-oxidizing metal such as lead or tin. The powdered metal systems operate on the basis of fusing together by way of eutectic alloying. As the paste is heated during firing the organic binder is first vaporized. An eutectic of the base metal (copper) and coating (tin) forms at the intersections of the base metal grains. This eutectic dissolves the grains and as the temperature is raised above the eutectic temperature, more of the base metal is dissolved. While the temperature is held at the higher value, the much smaller amount of sintering metal disappears as the eutectic dissolves and diffuses into the base metal until the composition of the eutectic is so enriched with base metal that it no longer has the eutectic properties and it solidifies. In this high temperature solidification, the base metal grains became thoroughly alloyed together and will not separate at the eutectic temperature (a lower temperature than their solidification by diffusion).

Bickler, D. B.↗

Explosive Welding of Aluminum, Titanium and Zirconium to Copper Sheet Metal

The main material properties affecting the explosive weldability of a certain metal combination are the yield strength, the ductility, the density and the sonic velocity of the two metals. Successful welding of the metal combination depends mainly on the correct choice of the explosive welding parameters; i.e., the stand off distance, the weight of the explosive charge relative to the weight of the flyer plate and the detonation velocity of the explosive. Based on the measured and the handbook values of the properties of interest, the explosive welding parameters were calculated and the arrangements for the explosive welding of the Al alloy 6061-T6, titanium and zirconium to OFHC copper were determined. The relatively small sheet metal thickness (1/8") and the fact that the thickness of the explosive layer must exceed a certain minimum value were considered during the determination of the explosive welding conditions. The results of the metallographic investigations and the measurements of the shear strength at the interface demonstrate the usefulness of these calculations to minimize the number of experimental trials.

Hegazy, A. A.↗

Copper-acrylic enamel serves as lubricant for cold drawing of refractory metals

Acrylic enamel spray containing metallic copper pigment lubricates refractory metal tubing during cold drawing operations so that the tubing surface remains free from scratches and nicks and does not seize in the die. Zirconium alloys, zirconium, tantalum alloys, niobium alloys, vanandium alloys and titanium alloys have been drawn using this lubricant.

Beane, C.↗

Development of Low Cost Contacts to Silicon Solar Cells

Different electroless plating systems were evaluated in conjunction with copper electroplating. All tests involved simultaneous deposition of front and back contacts using a standard cell materials. Cells with good adhesion and good curve fill factors were obtained using a palladium-chromium-copper metallization system. The final copper contact system was evaluated to determine if the copper would migrate at elevated temperatures. The copper migrated at elevated temperatures causing cell output degradation.

Iles, P. A.↗

Electrical properties of polyimides containing a near-surface deposit of silver

Films containing a surface or near-surface deposit of palladium, gold or copper metal as well as tin, cobalt, copper, or lithium oxides have been prepared by dissolving appropriate metal salts into poly(amide-acid)/N,N-dimethylacetamide solutions and curing the solvent cast films to temperatures up to 300 C. This preparation technique has been extended to evaluate the thermal, spectroscopic, and electrical characteristics of condensation polyimide films modified with silver nitrate. A near-surface deposit of metallic silver results but the reflective surface has high electrical resistivity (sheet resistivity) due to a polymer coating or overlayer above the metal. Details pertaining to the silver nitrate modified condensation polyimides are presented. Also, the applicability of the structural model and electrical model previously proposed for the cobalt oxide system are assessed.

Rancourt, J. D.↗

Friction and transfer of copper, silver, and gold to iron in the presence of various adsorbed surface films

Sliding friction experiments were conducted with the noble metals copper, silver, and gold and two binary alloys of these metals contacting iron in the presence of various adsorbates including, oxygen, methyl mercaptan, and methyl chloride. A pin on disk specimen configuration was used with a load of 100 grams, sliding velocity of 60 mm/min; at 25 C with the surfaces saturated with the adsorbates. Auger emission spectroscopy was used to monitor surface films. Results of the experiments indicate that friction and transfer characteristics are highly specific with respect to both the noble metal and surface film present. With all three metals and films transfer of the noble metal to iron occurred very rapidly. With all metals and films transfer of the noble metal to iron continuously increased with repeated passes except for silver and copper sliding on iron sulfide.

Buckley, D. H.↗

Applications of Atomic Layer Deposition in the Modification of Carbon Nanotubes

Atomic Layer Deposition (ALD) is a cost-effective nanoadditive-manufacturing technique that allows for conformal coating of substrates with atomic control in a benign temperature and pressure environment. Using paired precursor gases, thin films can be deposited on flat or textured surfaces ranging from glass, polymers, aerogels, and metals. Through atomic layer control, where single layers of atoms are deposited, fabrication of metal transparent films, nano-laminates, and coatings of nano-channels and pores is achievable. Reaction mechanisms in ALD are normally self-limiting, allowing for atomically accurate control of nanometer (nm) thicknesses. Therefore, high uniformity and precise thickness control make ALD an attractive process for the creation of novel nano-scale devices. Decreases in resistivity and density of electrical wire are needed to improve the function of electronics, electric motors and cables. Such improvements may be accomplished by adding ballistically conducting, metallic carbon nanotubes (CNT) to Cu. ALD was used to coat multiple substrates including CNT with Cu in an effort to make CNT-Cu composites which is more conductive and less dense than Cu. In addition, ALD can be used to as a method to deposit the catalyst layer seed layer for CNT growth using Ni. The ALD of copper metallic films can follow multiple reaction pathways depending on the ALD precursors used. For this work the reaction pathway was deposition of copper oxide and then post process annealing in a hydrogen environment. Copper(II) diacetylacetonate (Cu(acac)2) and ozone are used as precursors for copper oxide. As-deposited copper oxide films prepared at 180°C resulted in a growth per cycle of 1.0 A/cycle with low film resistivity.

Dwivedi, Vivek H.↗

Investigation of welded interconnection of large area wraparound contacted silicon solar cells

An investigation was conducted to evaluate the welding and temperature cycle testing of large area 5.9 x 5.9 wraparound silicon solar cells utilizing printed circuit substrates with SSC-155 interconnect copper metals and the LMSC Infrared Controlled weld station. An initial group of 5 welded modules containing Phase 2 developmental 5.9 x 5.9 cm cells were subjected to cyclical temperatures of + or 80 C at a rate of 120 cycles per day. Anomalies were noted in the adhesion of the cell contact metallization; therefore, 5 additional modules were fabricated and tested using available Phase I cells with demonstrated contact integrity. Cycling of the later module type through 12,000 cycles indicated the viability of this type of lightweight flexible array concept. This project demonstrated acceptable use of an alternate interconnect copper in combination with large area wraparound cells and emphasized the necessity to implement weld pull as opposed to solder pull procedures at the cell vendors for cells that will be interconnected by welding.

Lott, D. R.↗