An Innovative Additive Manufacturing Technology for High Density Interconnects
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Optimization of Geometric Perturbations on a Rod Moving Through a High Explosive Target
After completing a study to ensure the simulation results were converged, several high resolution 3D Smoothed Particle Hydrodynamic (SPH) simulations of copper rods impacting a high explosive (LX14) target were performed. This was then formulated into an optimization problem: I wanted to find the optimum shape and location of a perturbation on the rod that would maximize its erosion after it left the target. The shape of the perturbation was modeled as a 2D Gaussian bump and parameterized by its location along the rod axis (z 0 ) and amplitude (A). The final mass of the coherent part of the rod as it leaves the target was used as a metric to represent the erosion of the rod, and the optimization was formulated to maximize this metric with respect to the aforementioned design variables. Due to the expensive nature of the high-fidelity 3D SPH simulations, a surrogate model needed to be chosen so that many function calls to the optimizer would be feasible. Thus, a strategic full factorial sampling plan was chosen to build a dataset, which consisted of 24 high-fidelity simulations. Two surrogate models, a third order polynomial regression model and a Gaussian Process Model, were analyzed using a 14%/86% test/train holdout technique. The root mean square and R2 score of the test set was used to determine the best model, and the third order polynomial regression model was chosen as the surrogate model. Finally, the Nelder-Mead Simplex and Basin-hopping optimization algorithms were implemented, and it was found that the two algorithms gave slightly different optimum values. Nelder-Mead gave an optimum point of [z* 0 ;A*] = [9:9;0:4] and Basin-Hopping gave an optimum value of x* = [z* 0 ;A*] = [9:2;0:1].
45 MILITARY TECHNOLOGY, WEAPONRY, AND NATIONAL DEF↗
Thin Film Characterization on Cu/SnAg Solder Interface for 3D Packaging Technologies
Copper is a commonly used interconnect metal in microelectronic interconnects due to its exceptional electrical and thermal properties. Particularly in applications of the 2.5 and 3D integration, Cu is utilized in through-silicon-vias (TSVs) and flip chip interconnects between microelectronic chips for providing miniaturization, lower power and higher performance than current 2D packaging approaches. Furthermore, SnAg capped Cu pillars are a common high-density interconnect technology for flip chip bonding. For these interconnects, specific properties of the Cu surface, such as roughness and cleanliness, are an important factor in the process to ensure quality solder bumps. During electroplating, tight processing parameters must be met so that defects are avoided, and high bump uniformity is achieved. An understanding of the interactions at the solder and Cu pillar interface is needed, based on the electroplating parameters, to determine the best method for populating solder on the wafer surface. In this study, surface treatment techniques such as oxygen plasma cleaning were performed on the Cu surfaces and the SnAg plating chemistry for depositing the solder were evaluated through hull cell testing to qualitatively determine the range of current densities to investigate. It was observed that current density while plating played a large role in solder bump deposition morphology. At the higher current densities greater than 60 mA/cm 2 , bump height non-uniformity and dendritic growth are observed and at lower current densities, less than or equal to 60 mA/cm 2 , uniform, continuous bump height occurred.
36 MATERIALS SCIENCE↗