Forces acting on free carriers in semiconductors of inhomogeneous composition I, II
An investigation shows that the extended Wannier-Slater theorem with its position-dependent effective mass m cannot be considered a viable description of a semiconductor with compositional changes. The correct description of the behavior of the electron or hole flow in semiconductors in which the chemical composition changes gradually from position to position is more difficult. It is necessary to find a model Hamiltonian. This model Hamiltonian is to some extent arbitry, but it must be representative of a homogeneous sample. The difference between the true and the model Hamiltonian should be small in the sense that this difference may be considered a perturbation. However, a Hamiltonian with the required specifications can always be found provided that the compositional inhomogeneities do not change drastically over the distances of interest.