Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “coefficient of thermal expansion”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Lattice-structures and constructs with designed thermal expansion coefficients

A thermal expansion-managed lattice structure having a plurality of unit cells each having flexure bearing-mounted tabs supported on a base and actuated by thermal expansion of an actuator having a thermal expansion coefficient greater than the base and arranged so that the tab is inwardly displaced into a base cavity. The flexure bearing-mounted tabs are connected to other flexure-bearing-mounted tabs of adjacent unit cells so that the adjacent unit cells are spaced from each other to accommodate thermal expansion of individual unit cells while maintaining a desired bulk thermal expansion coefficient of the lattice structure as a whole.

42 ENGINEERING↗
DOE OSTI2019

Thermal expansion coefficients of high thermal conducting BAs and BP materials

Recently reported very high thermal conductivities in cubic boron arsenide (BAs) and boron phosphide (BP) crystals could potentially provide a revolutionary solution in the thermal management of high power density devices. To fully facilitate such an application, the compatible coefficient of thermal expansion (CTE) between the heat spreader and the device substrate, in order to minimize the thermal stress, needs to be considered. Here, we report our experimental CTE studies of BAs and BP in the temperature range from 100 K to 1150 K, through a combination of X-ray single crystal diffraction and neutron powder diffraction. Here, we demonstrated that the room temperature CTEs, 3.6 ± 0.15 × 10 –6 /K for BAs and 3.2 ± 0.2 × 10 –6 /K for BP, are more compatible with most of the semiconductors including Si and GaAs, in comparison with diamond, and thus could be better candidates for the future heat spreader materials in power electronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Tunable negative coefficient thermal expansion materials and composites

The present disclosure is directed to variable composition ceramics. Zr (2−x) Hf (x) WP 2 O 12 and Hf 2 WP 2 O 12 exhibit large negative thermal expansion that is linear over a large temperature range up to at least 900° C., These new ceramic material particles may be mixed with polymers to make a composite suitable for use in backsheets for photovoltaic modules or in other applications. The thermal expansion coefficient of the composite can be tailored to match that of the solar cell in order to reduce stress resulting from daily thermal cycling.

Gordon, Margaret Ellen↗
DOE OSTI2022

Processing, structure, and thermal properties of ZrW 2 O 8 , HfW 2 O 8 , HfMgW 3 O 12 , Al(HfMg) 0.5 W 3 O 12 , and Al 0.5 Sc 1.5 W 3 O 12 negative and zero thermal expansion coefficient ceramics

Negative and zero coefficient of thermal expansion (CTE) materials are of interest for developing polymer composites in electronic circuits that match the expansion of Si and in zero CTE supports for optical components, e.g., mirrors. In this work, the processing challenges and stability of ZrW 2 O 8 , HfW 2 O 8 , HfMgW 3 O 12 , Al(HfMg) 0.5 W 3 O 12 , and Al 0.5 Sc 1.5 W 3 O 12 negative and zero thermal expansion coefficient ceramics are discussed. Al 0.5 Sc 1.5 W 3 O 12 is demonstrated to be a relatively simple oxide to fabricate in large quantity and is shown to exhibit single phase up to 1300 °C in air and inert N 2 environments. The negative and zero CTE behavior was confirmed with dilatometry. Thermal conductivity and heat capacity were reported for the first time for HfMgW 3 O 12 and Al 0.5 Sc 1.5 W 3 O 12 and thermal conductivity was found to be very low (~0.5 W/mK). Grüneisen parameter is also estimated. Methods for integration of Al 0.5 Sc 1.5 W 3 O 12 with other materials was examined and embedding 50 vol% of the ceramic powder in flexible epoxy was demonstrated with a commercial vendor.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Pressure-Dependent Thermal Expansion Coefficient by a Diamond Anvil Cell

A thermal expansion coefficient (αp) is an essential thermophysical quantity for high-pressure research. The thermal expansion coefficient is the volume change over the temperature in an isobaric heating process. Although isobaric heating processes for diamond anvil cell (DAC) have been conducted by keeping the pressure constant during heating, pressure determination at high-temperature high pressure is debatable for decades long. In this paper, a revertible heating/cooling approach is presented, while its pressure determination at high-temperature high pressure is not required. We report a pressure-dependent thermal expansion coefficient of MgO at 9.5 GPa by reversible heating/cooling was determined by a DAC and its result matches the one collected by a large volume press, whose isobaric heating was conducted by manually adjusting its load/pressure.

36 MATERIALS SCIENCE↗
DOE OSTI2014

High temperature XRD of Cu{sub 2.1}Zn{sub 0.9}SnSe{sub 4}

Quaternary compound with chemical composition Cu{sub 2.1}Zn{sub 0.9}SnSe{sub 4} is prepared by solid state synthesis. High temperature XRD (X-Ray Diffraction) of this compound is used in studying the effect of temperature on lattice parameters and thermal expansion coefficients. Thermal expansion coefficient is one of the important quantities in evaluating the Grüneisen parameter which further useful in determining the lattice thermal conductivity of the material. The high temperature XRD of the material revealed that the lattice parameters as well as thermal expansion coefficients of the material increased with increase in temperature which confirms the presence of anharmonicty.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Ultraprecise Studies of the Thermal Expansion Coefficient of Diamond using Backscattering X-ray Diffraction

The linear thermal expansion coefficient of diamond crystals of type IIa and type Ia was measured in the temperature range from 10 to 295 K. Neither negative thermal expansion nor any substantial difference in the thermal expansion coefficient in crystals of the different types were observed. An empirical expression was obtained that approximates the temperature dependence of the thermal expansion coefficient of diamond. The T{sup 3} temperature dependence of a Debye solid holds below {approx}100 K with an accuracy of {approx}10{sup -8} K{sup -1}. A slight increase in the value of the lattice parameter was found for the Ia-type crystal, which suggests lattice dilatation by nitrogen impurity. The measurements were performed using Bragg diffraction in backscattering from diamond crystals of highly monochromatic 23.7 keV x rays with the recently demonstrated high relative accuracy of 1.2 x 10{sup -8} in the determination of the lattice parameter [S. Stoupin and Yu. Shvyd'ko Phys. Rev. Lett. 104 085901 (2010)].

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Negative thermal expansion coefficient and amorphization in defective 4H-SiC

This paper presents thermal expansion coefficient (TEC) and amorphization in 4H-SiC containing point defects at different concentrations. We considered vacancy defects, interstitial defects, and Frenkel pair defects and investigated the thermomechanical response of the lattice over a wide range of temperatures using classical molecular dynamics simulations. The results show that 4H-SiC with vacancy defects exhibits a negative TEC above a critical defect density of around 9% (irrespective of the temperature). With interstitial defects, it exhibits a positive TEC (regardless of the defect density), and with Frenkel pair defects it shows a transition from positive TEC to negative TEC for a defect density greater than 8%. The coupling between temperature-induced expansion and defect-introduced stress in the lattice forms the mechanistic basis for the observed variation in TEC. Furthermore, the specific heat decreases rapidly with an increase in defect density at room temperature, with the highest sensitivity of the lattice observed for the Frenkel pair defects followed by interstitial defects and then by vacancy defects. Finally, these findings highlight the critical implications of defects on thermal expansion behavior of 4H-SiC with applications in radiation environments.

36 MATERIALS SCIENCE↗
NASA NTRS1969

Technique for predicting the thermal expansion coefficients of cryogenic metallic alloys

Series of measurements on the thermal expansion coefficients of several aerospace alloys and standard materials establish relationships between related alloys that would aid in predicting their thermal expansion reliability. Thermal expansion data are also necessary for the reduction of electrical resistivity measurements of those same materials.

Clark, A. F.↗
NASA NTRS1996

A Noncontact Measurement Technique for the Density and Thermal Expansion Coefficient of Solid and Liquid Materials

A noncontact measurement technique for the density and the thermal expansion refractory materials in their molten as well as solid phases is presented. This technique is based on the video image processing of a levitated sample. Experiments were performed using the high-temperature electrostatic levitator (HTESL) at the Jet Propulsion Laboratory in which 2-3 mm diameter samples can be levitated, melted, and radiatively cooled in a vacuum. Due to the axisymmetric nature of the molten samples when levitated in the HTESL, a rather simple digital image analysis can be employed to accurately measure the volumetric change as a function of temperature. Density and the thermal expansion coefficient measurements were made on a pure nickel sample to test the accuracy of the technique in the temperature range of 1045-1565 C. The result for the liquid phase density can be expressed by p = 8.848 + (6.730 x 10(exp -4)) x T (degC) g/cu cm within 0.8% accuracy, and the corresponding thermal expansion coefficient can be expressed by Beta=(9.419 x 10(exp -5)) - (7.165 x 10(exp -9) x T (degC)/K within 0.2% accuracy.

Chung, Sang K.↗
NASA NTRS2007

The JPL Cryogenic Dilatometer: Measuring the Thermal Expansion Coefficient of Aerospace Materials

This slide presentation details the cryogenic dilatometer, which is used by JPL to measure the thermal expansion coefficient of materials used in Aerospace. Included is a system diagram, a picture of the dilatometer chamber and the laser source, a description of the laser source, pictures of the interferometer, block diagrams of the electronics and software and a picture of the electronics, and software. Also there is a brief review of the accurace.error budget. The materials tested are also described, and the results are shown in strain curves, JPL measured strain fits are described, and the coefficient of thermal expansion (CTE) is also shown for the materials tested.

dilatometer↗
DOE OSTI2023

Direct measurement of the thermal expansion coefficient of epitaxial WSe 2 by four-dimensional scanning transmission electron microscopy

Current reports of thermal expansion coefficients (TEC) of two-dimensional (2D) materials show large discrepancies that span orders of magnitude. Determining the TEC of any 2D material remains difficult due to approaches involving indirect measurement of samples that are atomically thin and optically transparent. We demonstrate a methodology to address this discrepancy and directly measure TEC of nominally monolayer epitaxial WSe 2 using four-dimensional scanning transmission electron microscopy (4D-STEM). Experimentally, WSe 2 from metal-organic chemical vapor deposition (MOCVD) was heated through a temperature range of 18- 564 °C using a barrel-style heating sample holder to observe temperature-induced structural changes without additional alterations or destruction of the sample. By combining 4D-STEM measurements with quantitative structural analysis, the thermal expansion coefficient of nominally monolayer polycrystalline epitaxial 2D WSe 2 was determined to be (3.5 ± 0.9) × 10 -6 K -1 and (5.7 ± 2) × 10 -5 K -1 for the in- and out-of-plane TEC, respectively, and (3.6 ± 0.2) × 10 -5 K -1 for the unit cell volume TEC, in good agreement with historically determined values for bulk crystals.

2D materials↗
DOE OSTI2018

Mapping Thermal Expansion Coefficients in Freestanding 2D Materials at the Nanometer Scale

Two-dimensional materials, including graphene, transition metal dichalcogenides and their heterostructures, exhibit great potential for a variety of applications, such as transistors, spintronics, and photovoltaics. While the miniaturization offers remarkable improvements in electrical performance, heat dissipation and thermal mismatch can be a problem in designing electronic devices based on two-dimensional materials. Quantifying the thermal expansion coefficient of 2D materials requires temperature measurements at nanometer scale. Here, we introduce a novel nanometer-scale thermometry approach to measure temperature and quantify the thermal expansion coefficients in 2D materials based on scanning transmission electron microscopy combined with electron energy-loss spectroscopy to determine the energy shift of the plasmon resonance peak of 2D materials as a function of sample temperature. Iin this work, by combining these measurements with first-principles modeling, the thermal expansion coefficients (TECs) of single-layer and freestanding graphene and bulk, as well as monolayer MoS 2 , MoSe 2 , WS 2 , orWSe 2 , are directly determined and mapped.

36 MATERIALS SCIENCE↗