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Results for “cascaded frequency multipliers”

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16 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2011

A 2.5-2.7 THz Room Temperature Electronic Source

We report on a room temperature 2.5 to 2.7 THz electronic source based on frequency multipliers. The source utilizes a cascade of three frequency multipliers with W-band power amplifiers driving the first stage multiplier. Multiple-chip multipliers are utilized for the two initial stages to improve the power handling capability and a sub-micron anode is utilized for the final stage tripler. Room temperature measurements indicate that the source can put out a peak power of about 14 microwatts with more than 4 microwatts in the 2.5 to 2.7 THz range.

Varactor diodes↗
NASA NTRS2005

Planar diode multiplier chains for THz spectroscopy

High-resolution laboratory spectroscopy is utilized as a diagnostic tool to determine noise and harmonic content of balanced [9]-[11] and unbalanced [12]-[14] multiplier designs. Balanced multiplier designs suppress unintended harmonics more than -20dB. Much smaller values were measured on unbalanced multipliers.

high-resolution spectroscopy↗
NASA NTRS1990

Submillimeter sources for radiometry using high power Indium Phosphide Gunn diode oscillators

A study aimed at developing high frequency millimeter wave and submillimeter wave local oscillator sources in the 60-600 GHz range was conducted. Sources involved both fundamental and harmonic-extraction type Indium Phosphide Gunn diode oscillators as well as varactor multipliers. In particular, a high power balanced-doubler using varactor diodes was developed for 166 GHz. It is capable of handling 100 mW input power, and typically produced 25 mW output power. A high frequency tripler operating at 500 GHz output frequency was also developed and cascaded with the balanced-doubler. A dual-diode InP Gunn diode combiner was used to pump this cascaded multiplier to produce on the order of 0.5 mW at 500 GHz. In addition, considerable development and characterization work on InP Gunn diode oscillators was carried out. Design data and operating characteristics were documented for a very wide range of oscillators. The reliability of InP devices was examined, and packaging techniques to enhance the performance were analyzed. A theoretical study of a new class of high power multipliers was conducted for future applications. The sources developed here find many commercial applications for radio astronomy and remote sensing.

Deo, Naresh C.↗
NASA NTRS2010

Optical Sidebands Multiplier

Optical sidebands have been generated with relative frequency tens to hundreds of GHz by using optical sidebands that are generated in a cascade process in high-quality optical resonators with Kerr nonlinearity, such as whispering gallery mode (WGM) resonators. For this purpose, the WGM resonator needs to be optically pumped at two frequencies matching its resonances. These two optical components can be one or several free spectral ranges (FSRs), equal to approximately 12 GHz, in this example, apart from each other, and can be easily derived from a monochromatic pump with an ordinary EOM (electro-optic modulation) operating at half the FSR frequency. With sufficient nonlinearity, an optical cascade process will convert the two pump frequencies into a comb-like structure extending many FSRs around the carrier frequency. This has a demonstratively efficient frequency conversion of this type with only a few milliwatt optical pump power. The concept of using Kerr nonlinearity in a resonator for non-degenerate wave mixing has been discussed before, but it was a common belief that this was a weak process requiring very high peak powers to be observable. It was not thought possible for this approach to compete with electro-optical modulators in CW applications, especially those at lower optical powers. By using the high-Q WGM resonators, the effective Kerr nonlinearity can be made so high that, using even weak seeding bands available from a conventional EOM, one can effectively multiply the optical sidebands, extending them into an otherwise inaccessible frequency range.

Strekalov, Dmitry V.↗
NASA NTRS1996

Design and Analysis of Broad-Band Fixed-Tuned Submillimeter-Waveguide Multipliers using MMIC Style Circuit Topology

The design and analysis of varactor diode doubler, quadrupler and cascaded doubler circuits for 320 and 640 GHz have been completed. A new approach has been employed to produce a tunerless waveguide mount with a very flexible, frequency scaleable, MMIC style multiplier circuit. The concept, design, predicted performance and measurements on some of the constituent mount elements are presented.

varactor diode doubler MMIC style multiplier circu↗
NASA NTRS2013

An All-Solid-State, Room-Temperature, Heterodyne Receiver for Atmospheric Spectroscopy at 1.2 THz

Heterodyne receivers at submillimeter wavelengths have played a major role in astrophysics as well as Earth and planetary remote sensing. All-solid-state heterodyne receivers using both MMIC (monolithic microwave integrated circuit) Schottky-diode-based LO (local oscillator) sources and mixers are uniquely suited for long-term planetary missions or Earth climate monitoring missions as they can operate for decades without the need for any active cryogenic cooling. However, the main concern in using Schottky-diode-based mixers at frequencies beyond 1 THz has been the lack of enough LO power to drive the devices because 1 to 3 mW are required to properly pump Schottky diode mixers. Recent progress in HEMT- (high-electron-mobility- transistor) based power amplifier technology, with output power levels in excess of 1 W recently demonstrated at W-band, as well as advances in MMIC Schottky diode circuit technology, have led to measured output powers up to 1.4 mW at 0.9 THz. Here the first room-temperature tunable, all-planar, Schottky-diode-based receiver is reported that is operating at 1.2 THz over a wide (≈20%) bandwidth. The receiver front-end (see figure) consists of a Schottky-diode-based 540 to 640 GHz multiplied LO chain (featuring a cascade of W-band power amplifiers providing around 120 to 180 mW at W-band), a 200-GHz MMIC frequency doubler, and a 600-GHz MMIC frequency tripler, plus a biasable 1.2-THz MMIC sub-harmonic Schottky-diode mixer. The LO chain has been designed, fabricated, and tested at JPL and provides around 1 to 1.5 mW at 540 o 640 GHz. The sub-harmonic mixer consists of two Schottky diodes on a thin GaAs membrane in an anti-parallel configuration. An integrated metal insulator metal (MIM) capacitor has been included on-chip to allow dc bias for the Schottky diodes. A bias voltage of around 0.5 V/diode is necessary to reduce the LO power required down to the 1 to 1.5 mW available from the LO chain. The epilayer thickness and doping profiles have been specifically optimized to maximize the mixer performance beyond 1 THz. The measured DSB noise temperatures and conversion losses of the receiver are 2,000 to 3,500 K and 12 to 14 dB, respectively, at 120 K, and 4,000 to 6,000 K and 13 to 15 dB, respectively, at 300 K. These results establish the state-of-the-art for all-solid-state, all-planar heterodyne receivers at 1.2 THz operating at either room temperature or using passive cooling only. Since no cryogenic cooling is needed, the receiver is eminently suited to atmospheric heterodyne spectroscopy of the outer planets and their moons.

Siles, Jose V.↗
NASA NTRS2004

Solid-state Terahertz Sources for Space Applications

This paper discusses the construction of solid-state frequency multiplier chains utilized far teraherz receiver applications such as the Herschel Space Observatory . Emphasis will he placed on the specific requirements to be met and challenges that were encountered. The availability of high power amplifiers at 100 GHz makes it possible to cascade frequency doublers and triplers with sufficient RF power to pump heterodyne receivers at THz frequencies. The environmental and mechanical constraints will be addressed as well as reliability issues.

solid state frequency↗
NASA NTRS2001

Experimental Investigation of Local Oscillator Chains with GaAs Planar Diodes at Cryogenic Temperatures

This paper will describe a robust test-bed that has been built to measure multiplier performance over a wide range of temperatures and frequencies. In a 182-212 GRz designed balanced doubler the peak efficiency at 201 GHz improves from 22% to 28% upon cooling from 300 K to 120 K. This stage is then used to pump a 362-424 GRz balanced planar doubler. The peak chain efficiency increases from 3.4% to 6% when the two cascaded doublers are cooled from 300 K to 120 K. This enables the production of 10 mW of peak output power at 377 GHz, which ought to be sufficient for driving the next stage multiplier.

Maestrini, A.↗
NASA NTRS2004

THz Local Oscillator Technology

The last decade has seen a number of technological advancements that have now made it possible to implement fully solid state local oscillator chains up to 2 THz. These chains are composed of cascaded planar multiplier stages that are pumped with W-band high power sources. The high power W-band sources are achieved by power combining MMIC amplifiers and can provide in access of 150 mW with about 10% bandwidth. Planar diode technology has also enabled novel circuit topologies that can take advantage of the high input power and demonstrate significant efficiencies well into the THz range. Cascaded chains to 1.9 THz have now been demonstrated with enough output power to successfully pump hot-electron bolometer mixers in this frequency range. An overview of the current State-of-the-Art of the local oscillator technology will be presented along with highlighting future trends and challenges.

multipliers↗
NASA NTRS2007

Terahertz Schottky Multiplier Sources

This viewgraph presentation reviews the multiplier source technologies and the status/Performance of THz multiplier sources. An example of a THz application is imaging radar. The presentation reviews areas of requirements for THz sources: (1) Figures of merit, (i.e., Frequency Terahertz for high resolution Bandwidth of at least 15 GHz for high range resolution Efficiency (i.e., minimize power supply requirements) (2) Output power: (i.e., Milliwatts below 800 GHz, 10s of microwatts above 1 THz, 1-2 microwatts near 2 THz (3) Mechanical--stability, compact, low mass (4) Environmental -- radiation, vibration, thermal. Several sources for 0.3 - 2 THz are reviewed: FIR lasers, quantum cascade lasers (QCL), backward-wave oscillator (BWO), and Multiplier sources. The current state of the art (SoA) is shown as Substrateless Technology. It also shows where the SoA is for devices beyond 1 THz. The presentation concludes by reviewing the options for future development, and 2 technology roadmaps

submillimeter wave↗
DOE OSTI2023

Phase Locking of a THz QC-VECSEL to a Microwave Reference

We report high-resolution frequency study and phase locking have been performed on a terahertz (THz) quantum-cascade vertical-external-cavity surface-emitting laser (QC-VECSEL) operating around 2.5 THz. A subharmonic diode mixer is used to down convert the THz signal to a 100 MHz intermediate frequency that is phase locked to a stable 100 MHz microwave reference. Between 90% and 95% of the QC-VECSEL signal is locked within 2 Hz of the multiplied RF reference, and amplitude fluctuations on the order of 1%–10% are observed, depending on the bias point of the QC-VECSEL. The bandwidth of the locking loop is ~1 MHz. Many noise peaks in the IF signal are observed, likely corresponding to mechanical resonances in the 10 Hz–10 kHz. These peaks are generally -30 to -60 dB below the main tone and are below the phase noise level of the multiplied RF reference that ultimately limits the phase noise of the locked QC-VECSEL.

42 ENGINEERING↗
NASA NTRS2011

All-Solid-State 2.45-to-2.78-THz Source

Sources in the THz range are required in order for NASA to implement heterodyne instruments in this frequency range. The source that has been demonstrated here will be used for an instrument on the SOFIA platform as well as for upcoming astrophysics missions. There are currently no electronic sources in the 2 3- THz frequency range. An electronically tunable compact source in this frequency range is needed for lab spectroscopy as well as for compact space-deployable heterodyne receivers. This solution for obtaining useful power levels in the 2 3- THz range is based on utilizing power-combined multiplier stages. Utilizing power combining, the input power can be distributed between different multiplier chips and then recombined after the frequency multiplication. A continuous wave (CW) coherent source covering 2.48 2.75 THz, with greater than 10 percent instantaneous and tuning bandwidth, and having l 14 W of output power at room temperature, has been demonstrated. This source is based on a 91.8 101.8-GHz synthesizer followed by a power amplifier and three cascaded frequency triplers. It demonstrates that purely electronic solid-state sources can generate a useful amount of power in a region of the electromagnetic spectrum where lasers (solid-state or gas) were previously the only available coherent sources. The bandwidth, agility, and operability of this THz source has enabled wideband, high-resolution spectroscopic measurements of water, methanol, and carbon monoxide with a resolution and signal-to-noise ratio unmatched by other existing systems, providing new insight in the physics of these molecules. Further - more, the power and optical beam quality are high enough to observe the Lamb-dip effect in water. The source frequency has an absolute accuracy better than 1 part in 1012, and the spectrometer achieves sub-Doppler frequency resolution better than 1 part in 108. The harmonic purity is better than 25 dB. This source can serve as a local oscillator for a variety of heterodyne systems, and can be used as a method for precision control of more powerful but much less frequency-agile quantum mechanical terahertz sources.

Mehdi, Imran↗
NASA NTRS2004

Reliability of Cascaded THz Frequency Chains with Planar GaAs Circuits

Planar GaAs Schottky diodes will be utilized for all of the LO chains on the HIPI instrument for the Herschel Space Observatory. A better understanding of device degradation mechanisms is desirable in order to specify environmental and operational conditions that do not reduce device life times. Failures and degradation associated with ESD (Electrostatic Discharge), high temperatures, DC currents and RF induced current and heating have been investigated. The goal is to establish a procedure to obtain the safe operating range for a given frequency multiplier.

reliability on Schottky diode multipliers↗
NASA NTRS1992

Spectral analysis of wave motion in plane solids with boundaries

A spectral formulation is employed whereby in-plane stress waves are synthesized from the superposition of components at discrete frequencies and wavenumbers. The summations are performed using the fast Fourier transform and the Fourier series, respectively. Because the components are discrete, the solution to problems (over the entire field) with completely arbitrary loading, both in time and space, is made tractable. Waves generated from a line load acting on an infinite and semiinfinite plane are first considered. A cascade approach is then adopted for the treatment of these waves incident on a free, fixed, and elastic boundary. At each stage, the results are compared with those obtained from the available classical solutions and/or finite element results. These studies will form the basis for the investigation of in-plane stress waves in multiply layered media.

Rizzi, S. A.↗
NASA NTRS2001

InP MMIC Chip Set for Power Sources Covering 80-170 GHz

We will present a Monolithic Millimeter-wave Integrated Circuit (MMIC) chip set which provides high output-power sources for driving diode frequency multipliers into the terahertz range. The chip set was fabricated at HRL Laboratories using a 0.1-micrometer gate-length InAlAs/InGaAs/InP high electron mobility transistor (HEMT) process, and features transistors with an f(sub max) above 600 GHz. The HRL InP HEMT process has already demonstrated amplifiers in the 60-200 GHz range. In this paper, these high frequency HEMTs form the basis for power sources up to 170 GHz. A number of state-of-the-art InP HEMT MMICs will be presented. These include voltage-controlled and fixed-tuned oscillators, power amplifiers, and an active doubler. We will first discuss an 80 GHz voltage-controlled oscillator with 5 GHz of tunability and at least 17 mW of output power, as well as a 120 GHz oscillator providing 7 mW of output power. In addition, we will present results of a power amplifier which covers the full WRIO waveguide band (75-110 GHz), and provides 40-50 mW of output power. Furthermore, we will present an active doubler at 164 GHz providing 8% bandwidth, 3 mW of output power, and an unprecedented 2 dB of conversion loss for an InP HEMT MMIC at this frequency. Finally, we will demonstrate a power amplifier to cover 140-170 GHz with 15-25 mW of output power and 8 dB gain. These components can form a power source in the 155-165 GHz range by cascading the 80 GHz oscillator, W-band power amplifier, 164 GHz active doubler and final 140-170 GHz power amplifier for a stable, compact local oscillator subsystem, which could be used for atmospheric science or astrophysics radiometers.

Ngo, Catherine↗