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At least 19 records

Incorporation of Oxygen Carrier Recycle into Large-Scale Production of Cu-Based Oxygen Carriers

One of the greatest challenges in the chemical looping combustion (CLC) of solid fuels is developing an oxygen carrier material that is reactive and attrition resistant and can be prepared at a reasonable cost. Recent efforts in oxygen carrier development have followed two primary approaches: (1) using natural ores, such as ilmenite, or (2) developing highly attrition-resistant and reactive synthetic materials. Both approaches have shortcomings, namely, the low reactivity and incompatibility of ores with solid fuel CLC and the high cost and low durability of synthetic materials. Here, a different approach is taken where attrition is assumed inevitable and the recycling of spent oxygen carrier materials is incorporated into oxygen carrier manufacture. For solid fuel CLC, Cu-based oxygen carriers are attrited and are collected with fly ash. Copper oxides are more reactive with nitric acid than most ash materials, meaning that a copper-nitrate-rich leachate can be generated. This copper nitrate stream could then be reused in oxygen carrier synthesis by impregnation. For proof of concept, leaching experiments were conducted to verify that copper oxides are selectively leached from ash-containing spent oxygen carriers. Several cases for process design are proposed based on the composition of spent materials, as the degree of copper oxidation and type of solid fuel dictate leaching residence times and general processing intensity. The four stages proposed here include impurity removal, copper leaching and recovery, solid–liquid separation, and evaporation/concentrating. The resulting process should be able to recover up to 95% of copper while minimizing inclusion of undesirable ash-based impurities.

anions↗

Coherently coupled carrier and phonon dynamics in elemental tellurium probed by extreme ultraviolet transient absorption

The narrow band-gap semiconductor elemental tellurium (Te) has a unique electronic structure due to strong spin-orbit splitting and a lack of inversion symmetry of its helical lattice. Using broadband extreme ultraviolet core-level transient absorption, we simultaneously measure the coherently coupled photoinduced carrier and lattice dynamics at the Te N4,5 edge initiated by a few-cycle NIR pulse. Ultrafast excitation of carriers leads to a coherently excited A1 phonon oscillation and the generation of a hot carrier population distribution that oscillates in temperature, and the phonon excursion and hot carrier temperature are π out of phase with respect to each other. The depths of modulation suggest a significant coupling between the electronic and lattice degrees of freedom in Te. A long-lived shift of the absorption edge suggests an excited state of Te in another equilibrium potential energy surface that lives on the order of the carrier recombination timescale. The observed phonon-induced oscillations of the hot carriers are supportive of a change in the metallicity, whereby Te becomes more metallic with increasing phonon-induced displacement. Additionally, near the Fermi level we observe an energy-dependent phase of the displacive excitation of the A1 phonon mode. The discovery of coherent coupling between the lattice and hot carriers in Te provides the basis to investigate coherent interactions between spin and orbital degrees of freedom. The results spectrally and temporally resolve the correlation between photoexcited hot carriers and coherent lattice excitations, providing insight on the optical manipulation of the Te electronic structure at high carrier densities exceeding 1021cm−3.

Adelman, Jonah R↗

Ultrafast Nanoimaging of Carrier Funneling in Composition-Graded Semiconductor Nanowires

Recent advances in bandgap engineering of low-dimensional semiconductors have enabled high-efficiency carrier transport in miniaturized electronic and optoelectronic devices. The physical properties and functionalities of these materials are governed by complex carrier dynamics coupled with multiple transport mechanisms in tailored band structures. Here, we report ultrafast nanoimaging of carrier funneling and recombination in composition-grade CdSxSe1-x nanowires using pump-probe near-field nanoscopy. Leveraging the high resolution of this technique in both space and time, we resolve nanoscale local carrier dynamics along composition-graded nanowires, revealing the local variation of composition-dependent carrier mobilities and lifetimes that significantly differ from their uniform composition counterparts. Furthermore, we demonstrate a length-dependent behavior wherein shorter nanowires exhibit enhanced funneling effects, accelerating carrier transport by up to 33%. Our findings provide direct visualization of nanoscale carrier transport while supporting an effective approach for investigating complex carrier interactions in inhomogeneous semiconductor nanostructures, with implications for optimizing next-generation optoelectronic devices.

Yang, Rundi↗

Strain-Driven Evolution of Structural and Carrier Recombination Dynamics in Germanium

Strain engineering in group-IV semiconductors, in particular germanium (Ge), offers a promising route for advancing next-generation optoelectronic device performance. High minority carrier lifetime serves as a direct indicator of superior material quality and device efficiency. Several factors govern the minority carrier lifetime in both strained Ge and strained GeSn, such as strain level, epilayer thickness, defects, surface roughness, and Sn alloying. In this study, the impact of biaxial strain on effective minority carrier lifetimes of tensile-strained Ge (0% ..epsilon..-Ge/Al?As, 0.78% ..epsilon..-Ge/In0.115?Ga0.885?As, and 0.93% ..epsilon..-Ge/In0.16?Ga0.84?As) and compressively strained GeSn (-0.53% c-Ge0.97?Sn0.03/Al?As) epilayers, grown by molecular beam epitaxy, was experimentally investigated via the microwave-reflection photoconductive decay (..mu..-PCD) technique as a simultaneous function of thickness and strain. The structural and strain-relaxation properties were analyzed by high-resolution x-ray diffraction and Raman spectroscopy, while surface morphology analysis using atomic force microscopy provided insights into the surface roughness of strained Ge-based epilayers. Defect characterization by cross-section transmission electron microscopy revealed superior crystalline quality of ..epsilon..-Ge in one epilayer, while twin boundary formation was observed in the other. We investigated the carrier recombination dynamics in epitaxially strained Ge by extracting the bulk recombination lifetime and surface recombination velocity using the thickness-dependent minority carrier lifetime. High effective minority carrier lifetimes of approximately 60-340 ns were achieved at high strain levels with minimal dependence on the thickness of the strained Ge-based epilayers by means of the ..mu..-PCD technique. Minority carrier lifetimes in Ge-based epilayers exhibit a quadratic dependence on the biaxial strain, ranging from -0.88% (compressive) to +1.6% (tensile). The analysis of the carrier recombination dynamics in strained Ge-based heterostructures offers a pathway to designing group-IV based optoelectronic devices.

36 MATERIALS SCIENCE↗

Metallurgical Analysis of the High Flux Isotope Reactor (HFIR) Carrier Lifting Bails (Rev.1)

The dissolution rates of the aluminum alloys in the High Flux Isotope Reactor (HFIR) element carriers and the Material Test Reactor (MTR) L-bundles in the H-Canyon facility have been identified as the possible cause of extended dissolutions that result in significant time and financial expenditures. A study, carried out by Savannah River National Laboratory (SRNL) to determine relationships between the dissolution rates and the metallurgical properties of the aluminum alloy materials of construction of the HFIR carriers and the L-bundles, considered the dissolution rates of aluminum alloy (AA) series 1100, 6061, and 6063. The study determined that the aluminum alloy compositions played a principal role in the dissolution rate of the carrier/bundle components. Higher dissolution rates were correlated with lower concentrations of the minor element additions in the alloys and with specific element concentrations. Aluminum alloys 1100 and 6063 were found to have similar dissolution rates that were approximately two orders of magnitude (100X) greater than those of AA6061. Based on the results of the dissolution behavior study, a Technical Assistance Request (TAR) was first issued to determine if the replacement of AA6061-T6 with AA6063-T6 is feasible for the HFIR carrier lifting bails. A Technical Task Request was then issued to consider AA6063-T5 as well as other alloys to improve possible supply chain issues. The metallurgical properties of the L-bundle (specifically the end caps) were not evaluated in this report because L-Bundle drawings already allow for the use of AA6063-T6 in all structural components. The HFIR carriers are composed of thin-walled components with significant surface areas that allow for relatively quick overall dissolution times. Conversely, the carrier lifting bails and the supporting constituents are composed of solid bars and thick plate regions with relatively small surface areas that experience longer overall dissolution times. While the MTR L-bundle design includes allowances for the materials of construction to be either AA6061-T6 or AA6063-T6, the HFIR carriers are specified to be constructed fully with AA6061-T6 alloy. This report analyzes the recommendations of the dissolution behavior study to replace the materials of construction of the HFIR carrier lifting bails. The analysis considers the operational requirements of the lifting bail and its supporting structures. To decrease dissolution times, the analysis considers direct replacement of the material as well as reductions in the thicknesses of the components to decrease the mass of the elements. Material reductions are considered on options for using either AA6061 and/or AA6063. The calculations are based on specifications from the American Society of Mechanical Engineer (ASME) and The Aluminum Association, Inc. design codes. The analysis finds that direct replacement of the lifting bail material of construction with AA6063-T6, and AA6063-T5 as well as reductions in the dimensions of the lifting bail components are acceptable. Note that this study considers the structural suitability of the alloys. It does not consider their dissolution rates in the dissolvers.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Defect-Limited Carrier Lifetime in Epitaxially Strained Germanium-On-Silicon Heterostructures

Epitaxially strained germanium-on-silicon (Ge-on-Si) heterostructures are central to next-generation photonic and electronic devices, yet their performance remains strongly constrained by defect-limited carrier lifetimes. In this work, we investigate the impact of defects on the carrier lifetime in relaxed Ge-on-Si and strained Ge-on-Si heterostructures. High-resolution X-ray diffraction quantifies the strain-state in Ge and reveals signatures of strain relaxation due to lattice mismatch. Cross-sectional and plan-view transmission electron microscopy analyses enable direct visualization of interfacial defects and quantification of threading dislocation densities (TDDs) within the Ge layer. However, the presence of a dense misfit dislocation network obscures the threading dislocation signatures, preventing reliable TDD determination by plan-view transmission electron microscopy in strained-Ge (..epsilon..-Ge). To assess the defect density in this case, etch-pit density measurements were performed, providing an alternative means of quantifying the TDDs in the ..epsilon..-Ge layer. Carrier lifetime measurements by microwave-reflection photoconductive decay reveal a clear relationship with TDDs ranging from 5 x 103 cm-2 to 2 x 1010 cm-2, confirming Shockley-Read-Hall recombination as the limiting mechanism at lower defect densities, with TDD-dominated recombination at higher defect densities. The Ge-on-Si relaxed heterostructure exhibited lifetimes much lower (~12 ns) than the lattice-matched Ge on gallium arsenide (GaAs) (~158 ns) heterostructure. Introducing controlled tensile strain reduces defect formation, suppresses strain-relaxation pathways, and leads to measurable improvements in minority carrier lifetime from 12 ns to 171 ns. These results establish a direct relation between defect suppression and carrier recombination dynamics in both relaxed Ge-on-Si grown directly on Si and strained Ge-on-Si heterostructures incorporating compound-semiconductor buffer layers, offering a materials-driven pathway for engineering Ge with improved carrier lifetime for photonic applications.

36 MATERIALS SCIENCE↗

Ethanol as a hydrogen carrier with a value-added co-product

Traditional liquid organic hydrogen carriers rely on return/re-charge of the carrier and financial subsidy. We show that ethanol, available at scale from fermentation, can be a revenue-positive hydrogen carrier, owing to the value of its potassium acetate co-product, itself an emerging fertilizer. Traditional liquid organic hydrogen carriers (LOHCs) rely on return/re-charge of the carrier and financial subsidy. We show here that ethanol, available at scale from fermentation, can be a revenue-positive hydrogen carrier, owing to the value of its potassium acetate co-product, itself an emerging fertilizer.

Rander, Andrew R↗

Ultrafast carrier dynamics in multiple quantum well p–i–n photodiodes

Quantum well (QW) structures are widely used in lasers, semiconductor optical amplifiers, and modulators, enabling their monolithic integration on the same substrate. As optoelectronic systems evolve to meet the growing bandwidth demands in the terahertz regime, a deep understanding of ultrafast carrier dynamics in QW structures becomes essential. We introduce a comprehensive model to analyze the ultrafast dynamics of interband photo-excited carriers in QW p–i–n structures and to calculate their frequency response. This model characterizes the entire photocarrier transport process, including carrier escape from QWs and movement across heterojunction interfaces. Additionally, we outline theoretical methods for calculating carrier escape times from both QWs and heterojunction interfaces. Using a GaAs/AlGaAs QW p–i–n structure as a case study, we discuss the effects of carrier escape times from QWs and heterojunction interfaces, as well as carrier transit time through the intrinsic region, on the frequency response of QW p–i–n structures.

Electronic band structure↗

Models and Measurements Quantify Photon Recycling, Charge-Carrier Diffusion and Photon Scattering Contributions to Photoluminescence in InP Nanowire Arrays

Nanowire arrays present many unique advantages for solar-to-chemical energy conversion. One possible advantage is that photon recycling between neighboring nanowires has the potential to increase solar energy conversion efficiencies. Here, in this work, we explore three underlying mechanisms of optical and electronic coupling between neighboring nanowires─incident photon scattering, photon recycling, and charge-carrier transport from the photoexcited nanowire to the neighboring nanowire via the underlying substrate─using single nanowire-level microscopy and spectroscopy measurements. We present a comprehensive analysis of light absorption and emission of a single nanowire at open circuit, and subsequent re-absorption and re-emission by a neighboring nanowire. We developed a novel correlated single nanowire microspectroscopy and widefield imaging methodology to spatially resolve photon communication pathways between neighboring nanowires and selectively image re-emitted and reflected photons. We developed unique multiphysics models to couple wave optics and semiconductor photophysics to especially isolate contributions from photon recycling and electronic transport to photon emission from neighboring nanowires. By systematically varying the morphologies of the nanowires modeled, we identified pathways to maximize photon recycling between neighboring nanowires. We concluded that the measured photoluminescence is more strongly influenced by the diffusion of charge carriers as compared to photon recycling in materials with moderate-to-large charge-carrier mobilities (>10 cm 2 V –1 s –1 ), and that photon recycling dictates photoluminescence intensity only when the charge-carrier mobility is low (<1 cm 2 V –1 s –1 ). The experimental and simulation platforms developed herein for photon management strategies can be leveraged by the semiconductor photocatalysis community to enhance solar-to-chemical conversion efficiencies in semiconductor nanowire arrays.

25 ENERGY STORAGE↗

Dynamic Carrier Modulation via Nonlinear Acoustoelectric Transport in van der Waals Heterostructures

Dynamically manipulating carriers in van der Waals heterostructures could enable solid-state quantum simulators with tunable lattice parameters. A key requirement is the formation of deep potential wells to reliably trap excitations. Here, we report the observation of nonlinear acoustoelectric transport and dynamic carrier modulation in boron nitride-encapsulated graphene devices coupled to intense surface acoustic waves (SAWs) on LiNbO 3 substrates. SAWs generate strong acoustoelectric current densities ( J AE ), transitioning from linear to nonlinear regimes with increasing SAW intensity. In the nonlinear regime, periodic carrier (electrons, holes, or their mixtures) stripes emerge. Using counter-propagating SAWs, we create standing SAWs (SSAWs) to dynamically manipulate charge distributions without static gates. The saturation of J AE , attenuation transitions, and tunable resistance peaks confirms strong carrier localization. Finally, these results establish SAWs as a powerful tool for controlling carrier dynamics in two-dimensional (2D) materials, paving the way for the development of time-dependent quantum systems and acoustic lattices for quantum simulation.

2D materials↗

Atomistic Origin of Microsecond Carrier Lifetimes at Perovskite Grain Boundaries: Machine Learning-Assisted Nonadiabatic Molecular Dynamics

The polycrystalline nature of perovskites, stemming from their facile solution-based fabrication, leads to a high density of grain boundaries (GBs) and point defects. However, the impact of GBs on perovskite performance remains uncertain, with contradictory statements found in the literature. We developed a machine learning force field, sampled GB structures on a nanosecond time scale, and performed nonadiabatic (NA) molecular dynamics simulations of charge carrier trapping and recombination in stoichiometric and doped GBs. The simulations reveal long, microsecond carrier lifetimes, approaching experimental data, stemming from charge separation at the GBs and small NA coupling, 0.01–0.1 meV. Stoichiometric GBs exhibit transient trap states, which, however, are not particularly detrimental to the carrier lifetime. Halide dopants form interstitial defects in the bulk, but have a stabilizing influence on the GB structure by passivating undersaturated Pb atoms and reducing the transient trap state formation. On the contrary, excess Pb destabilizes GBs, allowing formation of persistent midgap states that trap charges. Still, the charge carrier lifetime reduces relatively little, because the midgap states decouple from the bands, and charges are more likely to escape back into bands upon a GB structural fluctuation. The atomistic study into the structural dynamics of perovskite GBs and its influence on charge carrier trapping and recombination provides valuable insights into the complex properties of perovskites and the intricate role of GBs in the material performance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Development of Magnesium Borane Containing Solutions of Furans and Pyrroles as Reversible Liquid Hydrogen Carriers (Final Technical Report)

The objective of this project was the development of a two-way liquid hydrogen carrier having a greater energy efficiency and lower delivery costs than either existing hydrogen carriers or conventional compressed H 2 gas transport technology. It was hypothesized that a hydrogen carrier consisting of solutions of furans and pyrroles containing Mg(BH 4 ) 2 and pincer complex catalyst, would have more than twice the volumetric available hydrogen density of the conventional two-way liquid hydrogen carrier, methylcyclohexane. Most notably the envisioned liquid hydrogen carrier would: 1) maintain high product selectivity through multiple cycles of dehydrogenation and hydrogenation; and 2) undergo rapid dehydrogenation and re-hydrogenation. The project was specifically aimed at the demonstration of at least one LOHC solution of Mg(BH 4 ) 2 and pincer catalyst that releases ≥ 50 g H 2 /L at ≤ 200 °C upon dehydrogenation and undergoes ≥ 25% rehydrogenation under 100 atm of H 2 at ≤ 200 °C.

08 HYDROGEN↗

An Overview of Potential Future Aviation Energy Carriers

Global jet fuel demand is projected to grow to 165 billion gallons by 2050 and there is growing interest in the aviation industry to understand the capabilities of alternative energy carriers. This report considers several potential energy carriers, reviewing their production potential, operational considerations, and economic implications to inform potential next steps in aeronautics research. The following energy carriers (i.e., fuels) were evaluated in this study for future use in aviation: sustainable aviation fuel (SAF) - both biomass-based and power-to-liquids (PtL) - based SAF - cryogenic hydrogen (LH 2 ) - also known as liquid hydrogen - liquefied natural gas (LNG), liquefied ethane (LE), and Jet X. The barriers and opportunities for the evaluated energy carriers vary. SAF is a commercially available drop-in fuel compatible with existing aircraft and infrastructure. SAF is limited by both higher prices and slow commercialization of multiple pathways using different feedstocks necessary to significantly grow supply. Cryogenic fuels, in contrast, have very different thermal, physical, and chemical properties than SAF and Jet A, requiring the construction of new airport storage and dispensing infrastructure and the design of new aircraft energy systems capable of mitigating heat transfer and boil-off. Cryogenic fuels offer an opportunity to diversify aviation fuel carriers from domestic energy relevant for both energy security and resilience. This means cryogenic fuels are more of a longer-term solution for aircraft but are worth exploring for potential future cost savings and emissions benefits. Jet X refers to non-drop-in liquid hydrocarbon fuels in the early stages of investigation seeking favorable properties. There are substantial barriers to non-drop-in liquid aviation fuels that are not compatible with existing aircraft and fuel infrastructure.

33 ADVANCED PROPULSION SYSTEMS↗

As‐Doped Polycrystalline CdSeTe: Localized Defects, Carrier Mobility and Lifetimes, and Impact on High‐Efficiency Solar Cells

Abstract The efficiency potential for single‐junction photovoltaics (PV) is described by the detailed balance model, which requires the elimination of nonradiative recombination and perfect minority carrier collection. Improvements in GaAs, Si, and perovskite PV follow this model. It might be more complex for CdTe, a leading thin‐film PV technology. While lifetime, passivation, and doping goals for 25% efficient CdTe solar cells are largely reached, voltage is ≈20% below the detailed balance limit. Why is that? In Se‐alloyed CdSe x Te 1‐x (Se is required for >20% efficiency) additional losses can occur due to electrostatic and bandgap fluctuations and due to electronic trap states. To understand mechanisms limiting CdSeTe solar cell performance and to suggest improvements, carrier dynamics, and transport in CdSe x Te 1‐x with variation in Se composition and as doping is analyzed. It is shown that trapping, likely due to anion‐site defects and their complexes, is correlated with low charge carrier mobility of 0.1–0.6 cm 2 (Vs) −1 . Even with 1000 ns charge carrier lifetimes, carrier diffusion length is less than the absorber thickness, reducing efficiency to ≈23%. Device simulations are used to analyze the performance of CdSe x Te 1‐x solar cells; thermodynamic models are not sufficient for absorbers with electronic disorder and trapping.

14 SOLAR ENERGY↗

Spectral and small-signal electroluminescence analysis of carrier dynamics in dual-color InGaN/GaN light-emitting diodes

Here, we study carrier transport, distribution, and recombination in dual-color c-plane InGaN/GaN LEDs using spectral analysis and small-signal electroluminescence (SSEL). The emissions from green and blue quantum wells (QWs) were experimentally separated and analyzed. Spectral analysis and SSEL independently demonstrate that emission from the green QW is dominant at low current densities, consistent with its narrower bandgap, while emission from the blue QW is more significant at higher current densities, consistent with its reduced quantum confined Stark effect and larger wavefunction overlap. In addition, we demonstrate that the carrier recombination in the QWs is non-uniform, with carrier transport dramatically affecting the carrier distribution between QWs and the recombination in a specific QW. Finally, our measurements suggest that the effective active region contributing most strongly to radiative recombination corresponds to approximately two to three QWs on the p-GaN side, indicating limited carrier transport to more distant QWs in the structures studied.

36 MATERIALS SCIENCE↗

Multiple Carrier Generation at an Exceptionally Low Energy Threshold

Multiple carrier generation (MCG), a process wherein two or more carriers are generated from a single high-energy absorbed photon, holds immense promise for quantum sensing, metrology, low-threshold lasers, and photovoltaics. Despite its potential, MCG has faced obstacles such as low efficiency and a high threshold photon energy at least twice the band gap (2?Eg) of the semiconductor, limiting its application only to a class of materials with low Eg. Here, we present a new approach that overcomes this limitation by leveraging carrier-donor scattering to excite secondary electrons from donor states strategically positioned below the conduction band. Our method relies on strong Coulomb interaction, reduced dielectric screening, slow hot carrier cooling, and strictly follows the energy conservation rules. We experimentally demonstrated this idea in a model system of monolayer (1L) MoS2 by exploiting electron-donating chalcogen vacancy states. We observed an exceptionally low MCG threshold of ~1.12?Eg for the first time in 1L MoS2. Remarkably, the quantum yield can be further increased to >3 by increasing the photon energy to 1.65?Eg, representing a substantial advancement over existing methods. Our findings extend the horizon of MCG into next-generation high-performance optoelectronic devices with an on-demand operating spectral range spanning from infrared to ultraviolet.

CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS↗

Hole‐Carrier‐Dominant Transport in 2D Single‐Crystal Copper

Abstract In 2D noble metals like copper, the carrier scattering at grain boundaries has obscured the intrinsic nature of electronic transport. However, it is demonstrated that the intrinsic nature of transport by hole carriers in 2D copper can be revealed by growing thin films without grain boundaries. As even a slight deviation from the twin boundary is perceived as grain boundaries by electrons, it is only through the thorough elimination of grain boundaries that the hidden hole‐like attribute of 2D single‐crystal copper can be unmasked. Two types of Fermi surfaces, a large hexagonal Fermi surface centered at the zone center and the triangular Fermi surface around the zone corner, tightly matching to the calculated Fermi surface topology, confirmed by angle‐resolved photoemission spectroscopy (ARPES) measurements and vivid nonlinear Hall effects of the 2D single‐crystal copper account for the presence of hole carriers experimentally. This breakthrough suggests the potential to manipulate the majority carrier polarity in metals by means of grain boundary engineering in a 2D geometry.

36 MATERIALS SCIENCE↗