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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Switching limits of top-gated carbon nanotube field-effect transistors

The performance limits of carbon nanotube field-effect transistors (CNFETs) based on a recently reported process are studied by computational techniques at temperatures between 300 K and 4 K. Here, the impact of band-to-band tunneling (BTBT) and source-to-drain tunneling (SDT) is examined for devices with varying gate length through the use of simulations based on the non-equilibrium Green’s function (NEGF) formalism, and calibrated to measurements. Additionally, the case of junctionless chemical doping profiles is analyzed in contrast to electrostatic doping recently reported for test structures. The switching limits of CNFETs are further explored for devices based on carbon nanotubes (CNTs) with more favorable electronic structures.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Nozzle-Free Printing of CNT Electronics Using Laser-Generated Focused Ultrasound

Printed electronics have made remarkable progress in recent years and inkjet printing (IJP) has emerged as one of the leading methods for fabricating printed electronic devices. However, challenges such as nozzle clogging, and strict ink formulation constraints have limited their widespread use. To address this issue, a novel nozzle-free printing technology is explored, which is enabled by laser-generated focused ultrasound, as a potential alternative printing modality called Shock-wave Jet Printing (SJP). Specifically, the performance of SJP-printed and IJP-printed bottom-gated carbon nanotube (CNT) thin film transistors (TFTs) is compared. While IJP required ten print passes to achieve fully functional devices with channel dimensions ranging from tens to hundreds of micrometers, SJP achieved comparable performance with just a single pass. For optimized devices, SJP demonstrated six times higher maximum mobility than IJP-printed devices. Furthermore, the advantages of nozzle-free printing are evident, as SJP successfully printed stored and unsonicated inks, delivering moderate electrical performance, whereas IJP suffered from nozzle clogging due to CNT agglomeration. Moreover, SJP can print significantly longer CNTs, spanning the entire range of tube lengths of commercially available CNT ink. The findings from this study contribute to the advancement of nanomaterial printing, ink formulation, and the development of cost-effective printable electronics.

47 OTHER INSTRUMENTATION↗
DOE OSTI2019

Gate Quantum Capacitance Effects in Nanoscale Transistors

As the physical dimensions of a transistor gate continue to shrink to a few atoms, performance can be increasingly determined by the limited electronic density of states (DOS) in the gate and the gate quantum capacitance (C Q ). We demonstrate the impact of gate C Q and the dimensionality of the gate electrode on the performance of nanoscale transistors through analytical electrostatics modeling. For low-dimensional gates, the gate charge can limit the channel charge, and the transfer characteristics of the device become dependent on the gate DOS. Here, we experimentally observe for the first time, room-temperature gate quantization features in the transfer characteristics of single-walled carbon nanotube (CNT)-gated ultrathin silicon-on-insulator (SOI) channel transistors; features which can be attributed to the Van Hove singularities in the one-dimensional DOS of the CNT gate. In addition to being an important aspect of future transistor design, potential applications of this phenomenon include multilevel transistors with suitable transfer characteristics obtained via engineered gate DOS.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
NASA NTRS2001

Modeling of Kink-Shaped Carbon-Nanotube Schottky Diode with Gate Bias Modulation

A model is proposed for the recent gate-voltage (V(sub G)) modulation experiment of a kink-shaped carbon nanotube (NT) Schottky diode. Since larger V(sub G) increases both the forward and the reverse turn-on voltages of the diode in the experiment, we show that: (1) the rectification must occur at the kink where the metallic and the semiconducting NTs meet, and not at the electrode contact, and (2) the semiconducting NT must be n-type. The turn-on voltages are derived analytically as a function of V(sub G) with the electrode contact contribution and a good agreement is obtained with the experimental data.

Yamada, Toshishige↗
DOE OSTI2022

Hall effect in gated single-wall carbon nanotube films

The presence of hopping carriers and grain boundaries can sometimes lead to anomalous carrier types and density overestimation in Hall-effect measurements. Previous Hall-effect studies on carbon nanotube films reported unreasonably large carrier densities without independent assessments of the carrier types and densities. Here, we have systematically investigated the validity of Hall-effect results for a series of metallic, semiconducting, and metal–semiconductor-mixed single-wall carbon nanotube films. With carrier densities controlled through applied gate voltages, we were able to observe the Hall effect both in the n- and p-type regions, detecting opposite signs in the Hall coefficient. By comparing the obtained carrier types and densities against values derived from simultaneous field-effect-transistor measurements, we found that, while the Hall carrier types were always correct, the Hall carrier densities were overestimated by up to four orders of magnitude. This significant overestimation indicates that thin films of one-dimensional SWCNTs are quite different from conventional hopping transport systems.

42 ENGINEERING↗
NASA NTRS2002

Modeling of Gate Bias Modulation in Carbon Nanotube Field-Effect-Transistor

The threshold voltages of a carbon-nanotube (CNT) field-effect transistor (FET) are studied. The CNT channel is so thin that there is no voltage drop perpendicular to the gate electrode plane, and this makes the device characteristics quite unique. The relation between the voltage and the electrochemical potentials, and the mass action law for electrons and holes are examined in the context of CNTs, and inversion and accumulation threshold voltages (V(sub Ti), and V(sub Ta)) are derived. V(sub Ti) of the CNTFETs has a much stronger doping dependence than that of the metal-oxide- semiconductor FETs, while V(sub Ta) of both devices depends weakly on doping with the same functional form.

Toshishige, Yamada↗
NASA NTRS2008

Fabrication of Gate-Electrode Integrated Carbon-Nanotube Bundle Field Emitters

A continuing effort to develop carbon-nanotube-based field emitters (cold cathodes) as high-current-density electron sources has yielded an optimized device design and a fabrication scheme to implement the design. One major element of the device design is to use a planar array of bundles of carbon nanotubes as the field-emission tips and to optimize the critical dimensions of the array (principally, heights of bundles and distances between them) to obtain high area-averaged current density and high reliability over a long operational lifetime a concept that was discussed in more detail in Arrays of Bundles of Carbon Nanotubes as Field Emitters (NPO-40817), NASA Tech Briefs, Vol. 31, No. 2 (February 2007), page 58. Another major element of the design is to configure the gate electrodes (anodes used to extract, accelerate, and/or focus electrons) as a ring that overhangs a recess wherein the bundles of nanotubes are located, such that by virtue of the proximity between the ring and the bundles, a relatively low applied potential suffices to generate the large electric field needed for emission of electrons.

Toda, Risaku↗
DOE OSTI2021

Electrostatic gating of ion transport in carbon nanotube porins: A modeling study

Carbon nanotube porins (CNTPs) are biomimetic membrane channels that demonstrate excellent biocompatibility and unique water and ion transport properties. Gating transport in CNTPs with external voltage could increase control over ion flow and selectivity. Herein, we used continuum modeling to probe the parameters that enable and further affect CNTP gating efficiency, including the size and composition of the supporting lipid membrane, slip flow in the carbon nanotube, and the intrinsic electronic properties of the nanotube. Our results show that the optimal gated CNTP device consists of a semiconducting CNTP inserted into a small membrane patch containing an internally conductive layer. Moreover, we demonstrate that the ionic transport modulated by gate voltages is controlled by the charge distribution along the CNTP under the external gate electric potential. The theoretical understanding developed in this study offers valuable guidance for the design of gated CNTP devices for nanofluidic studies, novel biomimetic membranes, and cellular interfaces in the future.

36 MATERIALS SCIENCE↗
NASA NTRS2002

Modeling of Gate Bias Modulation in Carbon Nanotube Field-Effect-Transistors

The threshold voltages of a carbon nanotube (CNT) field-effect transistor (FET) are derived and compared with those of the metal oxide-semiconductor (MOS) FETs. The CNT channel is so thin that there is no voltage drop perpendicular to the gate electrode plane, which is the CNT diameter direction, and this makes the CNTFET characteristics quite different from those in MOSFETs. The relation between the voltage and the electrochemical potentials, and the mass action law for electrons and holes are examined in the context of CNTs, and it is shown that the familiar relations are still valid because of the macroscopic number of states available in the CNTs. This is in sharp contrast to the cases of quantum dots. Using these relations, we derive an inversion threshold voltage V(sub Ti) and an accumulation threshold voltage V(sub Ta) as a function of the Fermi level E(sub F) in the channel, where E(sub F) is a measure of channel doping. V(sub Ti) of the CNTFETs has a much stronger dependence than that of MOSFETs, while V(sub Ta)s of both CNTFETs and MOSFETs depend quite weakly on E(sub F) with the same functional form. This means the transition from normally-off mode to normally-on mode is much sharper in CNTFETs as the doping increases, and this property has to be taken into account in circuit design.

Yamada, Toshishige↗
DOE OSTI2025

Ion Transport in Carbon Nanotube Porins with a pH-Switchable Entrance Gate

Molecular transport in nanofluidic channels often differs drastically from conventional bulk transport. Strong confinement in those channels amplifies the roles of surface transport, surface defects, and molecular gates. Here, in this study, we introduce a chemical functionality at the nanotube rim that acts as a pH-triggered molecular gate by forming a movable lid that blocks the pore entrance. We use ion and proton transport measurements to show that these sub-1 nm diameter fluorescent ultrashort carbon nanotube porins (FUNPs) modulate ion transport by switching between the “open” and “closed” conformations of this gate. Specifically, at neutral pH the channel lid is open, allowing unimpeded ion transport through the gate, whereas at acidic pH values the lid forms a “closed” conformation that blocks transport through the nanotube. We also report first-principles MD simulations that confirm this gating mechanism and reveal molecular details of the ion and proton transport processes in these functional nanopores.

Carbon nanotubes↗
NASA NTRS2008

Radiation-Insensitive Inverse Majority Gates

To help satisfy a need for high-density logic circuits insensitive to radiation, it has been proposed to realize inverse majority gates as microscopic vacuum electronic devices. In comparison with solid-state electronic devices ordinarily used in logic circuits, vacuum electronic devices are inherently much less adversely affected by radiation and extreme temperatures. The proposed development would involve state-of-the-art micromachining and recent advances in the fabrication of carbon-nanotube-based field emitters. A representative three-input inverse majority gate would be a monolithic, integrated structure that would include three gate electrodes, six bundles of carbon nanotubes (serving as electron emitters) at suitable positions between the gate electrodes, and an overhanging anode. The bundles of carbon nanotubes would be grown on degenerately doped silicon substrates that would be parts of the monolithic structure. The gate electrodes would be fabricated as parts of the monolithic structure by means of a double-silicon-on-insulator process developed at NASA's Jet Propulsion Laboratory. The tops of the bundles of carbon nanotubes would lie below the plane of the tops of the gate electrodes. The particular choice of shapes, dimensions, and relative positions of the electrodes and bundles of carbon nanotubes would provide for both field emission of electrons from the bundles of carbon nanotubes and control of the electron current to obtain the inverse majority function, which is described in the paper.

Manohara, Harish↗
NASA NTRS2008

NASA Tech Briefs, April 2008

Topics covered include: Gas Sensors Based on Coated and Doped Carbon Nanotubes; Tactile Robotic Topographical Mapping Without Force or Contact Sensors; Thin-Film Magnetic-Field-Response Fluid-Level Sensor for Non-Viscous Fluids; Progress in Development of Improved Ion-Channel Biosensors; Simulating Operation of a Complex Sensor Network; Using Transponders on the Moon to Increase Accuracy of GPS; Controller for Driving a Piezoelectric Actuator at Resonance; Coaxial Electric Heaters; Dual-Input AND Gate From Single-Channel Thin-Film FET; High-Density, High-Bandwidth, Multilevel Holographic Memory; Fabrication of Gate-Electrode Integrated Carbon-Nanotube Bundle Field Emitters; Hydroxide-Assisted Bonding of Ultra-Low-Expansion Glass; Photochemically Synthesized Polyimides; Optimized Carbonate and Ester-Based Li-Ion Electrolytes; Compact 6-DOF Stage for Optical Adjustments; Ultrasonic/Sonic Impacting Penetrators; Miniature, Lightweight, One-Time-Opening Valve; Supplier Management System; Improved CLARAty Functional-Layer/Decision-Layer Interface; JAVA Stereo Display Toolkit; Remote-Sensing Time Series Analysis, a Vegetation Monitoring Tool; PyPele Rewritten To Use MPI; Data Assimilation Cycling for Weather Analysis; Hydrocyclone/Filter for Concentrating Biomarkers from Soil; Activating STAT3 Alpha for Promoting Healing of Neurons; and Probing a Spray Using Frequency-Analyzed Light Scattering.

Source record↗
DOE OSTI2025

Exploiting Intersubband Plasmons in Vertically Aligned Carbon Nanotubes for Near-Infrared Electrochromic Windows

Optically transparent materials with switchable near-infrared (NIR) transmissivity are of significant interest for energy-saving smart window technologies. To this end, we demonstrate that semitransparent films of vertically aligned carbon nanotubes (CNTs) incorporated into electrochemically gated devices exhibit NIR transmittance changes up to 47% and bistable optical states that are appealing for low-power, large-area operation. The tunable NIR electrochromic response is driven by a doping-induced intersubband plasmon (ISBP) absorption, an optical feature in CNTs that is selective to light polarized perpendicular to the CNT axis. Vertically aligned CNT films (as opposed to more conventional planar CNT mats) thus allow us to isolate and study the ISBP resonance changes with applied voltage, electrode material, and film thickness.

absorption↗
DOE OSTI2026

Cradle-to-gate life cycle assessment of advanced composite panels incorporating CO 2 -derived multi-walled carbon nanotubes and hemp fiber for sustainable building applications

Advanced composite panels represent a promising pathway to reducing carbon emissions in the construction industry, yet comprehensive environmental impact assessments remain limited. Here, in this study, we conduct a life cycle assessment (LCA) to evaluate the environmental impacts of innovative composite panels produced from multi-walled carbon nanotubes (MWCNTs), hemp fiber (HF), recycled carbon fiber (rCF), and recycled polypropylene (PP), exploring their potential as baseline structural equivalents to conventional gypsum board. MWCNTs and HF play a critical role in sequestering carbon during raw material production, while the recycling processes for CF and PP generally require less energy compared to virgin material production. The LCA evaluates environmental performance using the TRACI 2.1 method, covering global warming potential (GWP), ozone depletion, smog formation, acidification, eutrophication, carcinogenic and non-carcinogenic effects, respiratory impacts, ecotoxicity, and fossil fuel depletion. Compositional variations—resin type (virgin vs. recycled), rCF content (9–29 wt%), and HF content (10–30 wt%)—are introduced for sensitivity and hotspot analyses. Results demonstrate that, when compared on the basis of preliminary structural equivalence, increasing recycled PP, rCF, and HF content can significantly reduce global warming potential compared to gypsum board. Beyond carbon reduction, the composite panels show trade-offs across other environmental categories. With the growing demand for composite materials in interior panels, ceiling systems, and exterior claddings, these findings highlight the environmental benefits and potential trade-offs of the proposed composites, establishing a foundational framework to support their continued development toward full building-system integration.

Advanced composite manufacturing↗
DOE OSTI2021

Gate-tunable plasmons in mixed-dimensional van der Waals heterostructures

Abstract Surface plasmons, collective electromagnetic excitations coupled to conduction electron oscillations, enable the manipulation of light–matter interactions at the nanoscale. Plasmon dispersion of metallic structures depends sensitively on their dimensionality and has been intensively studied for fundamental physics as well as applied technologies. Here, we report possible evidence for gate-tunable hybrid plasmons from the dimensionally mixed coupling between one-dimensional (1D) carbon nanotubes and two-dimensional (2D) graphene. In contrast to the carrier density-independent 1D Luttinger liquid plasmons in bare metallic carbon nanotubes, plasmon wavelengths in the 1D-2D heterostructure are modulated by 75% via electrostatic gating while retaining the high figures of merit of 1D plasmons. We propose a theoretical model to describe the electromagnetic interaction between plasmons in nanotubes and graphene, suggesting plasmon hybridization as a possible origin for the observed large plasmon modulation. The mixed-dimensional plasmonic heterostructures may enable diverse designs of tunable plasmonic nanodevices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS2002

Analysis of Carbon Nanotube Metal-Semiconductor Diode Device

We study recently reported drain current Id-drain voltage Vd characteristics of a carbon nanotube metal semiconductor diode device with the gate voltage Vg applied to modulate the carrier density in the nanotube. The diode was kink-shaped at the metal-semiconductor interface. It was shown that (1) larger negative Vg blocked Id more effectively in the negative Vd region, resulting in the rectifying Id-Vd characteristics, and that (2) positive Vg allowed Id in the both Vd polarities, resulting in the non-rectifying characteristics. The negative Vd was the Schottky reverse direction, judging from the negligible Id behavior for a wide region of -4 V less than Vd less than 0 V, with Vg = -4 V. Such negative Vg would attract positive charges from the metallic electrodes (charge reservoir) to the nanotube and lower the nanotube Fermi energy (EF). With larger negative Vg, the experiment showed that the Schottky forward direction (Vd greater than 0) had a smaller turn-on voltage and the Schottky reverse direction (Vd less than 0) was more resistant to the tunneling breakdown. Therefore, the majority carriers in the transport would be electrons since they can see a lower tunneling barrier (shallower built-in potential) in the forward direction when EF is lowered, and a thicker tunneling barrier (Schottky barrier) in the reverse direction due to the reduction in the electron density when EF is lowered.

Yamada, Toshishige↗
NASA NTRS2001

Analysis of Carbon Nanotube Metal-Semiconductor Diode Device

We study recently reported drain current I(sub d)-drain voltage V(sub d) characteristics of a carbon nanotube metal-semiconductor diode device with the gate voltage V(sub g) applied to modulate the carrier density in the nanotube. The diode was kink-shaped at the metal-semiconductor interface. It was shown that (1) larger negative V(sub g) blocked I(sub d) more effectively in the negative V(sub d) region, resulting in the rectifying I(sub d)-V(sub d) characteristics, and that (2) positive V(sub g) allowed I(sub d) in the both V(sub d) polarities, resulting in the non-rectifying characteristics. The negative V(sub d) was the Schottky reverse direction, judging from the negligible I(sub d) behavior for a wide region of -4 V (is less than) V(sub d) (is less than) 0 V, with V(sub g) = -4 V. Such negative V(sub g) would attract positive charges from the metallic electrodes (charge reservoir) to the nanotube and lower the nanotube Fermi energy (E(sub F)). With larger negative V(sub g), the experiment showed that the Schottky forward direction (V(sub d) (is greater than) 0) had a smaller turn-on voltage and the Schottky reverse direction (V(sub d) (is less than) 0) was more resistant to the tunneling breakdown. Therefore, the majority carriers in the transport would be electrons since they can see a lower tunneling barrier (shallower built-in potential) in the forward direction when E(sub F) is lowered, and a thicker tunneling barrier (Schottky barrier) in the reverse direction due to the reduction in the electron density when E(sub F) is lowered.

Yamada, Toshishige↗