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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Electric field reversals resulting from voltage waveform tailoring in Ar/O 2 capacitively coupled plasmas sustained in asymmetric systems

The etching of nanometer scale high-aspect-ratio (HAR) features into dielectric materials in low pressure radio frequency excited plasmas is often accompanied by charge accumulation inside the features which can slow etching rates and produce distortions such as twisting. The intra feature charging is at least partially produced by differences in electron and ion energy and angular distributions (EADs). Positive ions, accelerated to high energies having narrow angular spreads by the sheath electric field, can penetrate deeply into HAR features. Electrons typically arrive at the wafer with nearly thermal and isotropic distributions and do not penetrate deeply into HAR features. These disparities lead to differential charging of the inside of the feature, which can lead to reductions in etch rate and feature distortion due to ion deflection. With in-creasing aspect ratio of features, charging challenges are expected to continue for the foreseeable future. In this work, the use of tailored voltage waveforms in geometrically asymmetric capacitively coupled plasmas sustained in Ar/O 2 at 40 mTorr was computationally investigated with the goal of shaping the EAD of electrons incident onto the substrate to address differential charging. The tailored waveform consisted of a sinusoidal wave and its higher harmonics with a fundamental frequency of 1 MHz. Further, we found that electric field reversals in the sheath and presheath can occur during the anodic portion of the cycle. The electric field reversal increases the energy and decreases the angular spread of electrons incident onto the substrate. The magnitude of the electric field reversal can be controlled by the phase angle of the even harmonics and the gas composition. Due to its electronegative nature, increasing mole fractions of O 2 impedes electron transport to the surface which further increases the electric field reversal.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Study of synchronous RF pulsing in dual frequency capacitively coupled plasma

Low-pressure multi-frequency capacitively coupled plasmas (CCPs) are used for numerous etch and deposition applications in the semiconductor industry. Pulsing of the radio-frequency (RF) sources enables control of neutral and charged species in the plasma on a millisecond timescale. The synchronous (i.e. simultaneous, in-phase) pulsing of both power sources in a dual frequency CCP is examined in this article. Due to the low gas pressure, modeling has been done using the electrostatic particle-in-cell/Monte Carlo collision method. Here, the objective of this work is to investigate the sensitivity of the plasma properties to small changes in timing during synchronous pulsing of the two RF sources. It is demonstrated that small deviations in the on and off times of the two RF sources can lead to major changes in the plasma characteristics. This high sensitivity is of concern for process repeatability but can be utilized to enable better control of the dynamics of plasma-surface interaction. In the simulations, the pulsing parameters (on and off times and ramp rates) are varied and the temporal evolution of plasma characteristics such as electron density (n e ), species current at the electrode, and electron temperature are examined. It is demonstrated that if the low-frequency (LF) source is turned off a few μs before (or after) the high-frequency source, n e during the off-state is significantly higher (or lower) due to the frequency coupling effect. Similarly, turning on the LF source with a small delay results in a sharp increase in the plasma density when the RF sources are turned on.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

On the Ohmic-dominant heating mode of capacitively coupled plasma inverted by boundary electron emission

Electron emission from the boundary is ubiquitous in a capacitively coupled plasma (CCP) and precipitates nonnegligible influence on the discharge properties. Here, we present Particle-in-Cell/Monte Carlo Collision simulation of an Ohmic-dominant heating mode of the capacitively coupled plasma, where the stochastic heating vanishes and only Ohmic heating sustains the discharge due to sheath inversion by boundary electron emission. The inverted CCP features negative sheath potential without Bohm presheath, hence excluding plasma heating due to sheath edge oscillation. The particle and energy transport of the proposed heating mode is analyzed. The influence of boundary electron emission flux, source voltage, and neutral pressure on the transition between classic and Ohmic-dominant CCP heating modes is shown with designated simulation scans. Further, a modified inverse sheath–plasma coupling due to excessive ionization is discovered. In the end, key indicators of the proposed heating mode in plasma diagnostics are provided for future experimental verifications.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

High-Fidelity Computational Studies of Intermediate Pressure Capacitively Coupled Plasmas

This report discussed progress made in the development of a computational model for intermediate pressure capacitively coupled plasma discharge. A new full fidelity argon chemistry model has been developed that includes electron, argon ion, three lumped states for electronically excited species, and the background ground state argon. As such the mechanism has been validated over a wide range of intermediate pressure conditions from 100 mTorr to a few Torr. Uncertainties in the electron impact cross sections and the rate coefficients for the reactions are propagated through the model to establish uncertainties that emerge in the model due the reaction mechanism and its impact on the discharge properties. The model is therefore validated in face of uncertainties.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2026

Dynamics of argon metastables in Ar–CH 4 radio frequency capacitively-coupled plasma: real-time monitoring with neural network-augmented broadband optical emission spectroscopy

In moderate-pressure radio frequency (RF) capacitively coupled plasmas generated in argon–methane mixtures, the density of argon metastable atoms (Ar 1 s 5 ) exhibits a non-monotonic dependence on methane (CH 4 ) concentration. Laser-induced fluorescence (LIF) was used to measure and compare local Ar 1 s 5 densities in Ar and Ar–CH 4 plasmas at 2.6 Torr and RF powers of 17–117 W. The addition of 1% CH 4 increases the metastable density, and 2% CH 4 triggers a strong depletion by an order of magnitude, compared to 1% CH 4 case. This non-monotonic behavior demonstrates the sensitivity of metastable populations to small gas admixtures, which is critical for processes where metastables drive precursor dissociation. For real-time monitoring of metastable population, broadband optical emission spectroscopy (OES) is augmented with a feedforward neural network (NN) to predict Ar s1 5 densities from spectral features. When trained on LIF data, the NN replicates the absolute densities and the dynamic trends of Ar 1 s 5 density variation. The NN-augmented broadband OES approach can be used as a simple and cost-effective tool for tracking Ar metastables in Ar-rich plasmas, facilitating industrial-scale optimization.

Yatom, Shurik [Princeton Plasma Physics Laboratory↗
DOE OSTI2024

Accuracy of the explicit energy-conserving particle-in-cell method for under-resolved simulations of capacitively coupled plasma discharges

The traditional explicit electrostatic momentum-conserving particle-in-cell algorithm requires strict resolution of the electron Debye length to deliver numerical stability and accuracy. The explicit electrostatic energy-conserving particle-in-cell algorithm alleviates this constraint with minimal modification to the traditional algorithm, retaining its simplicity, ease of parallelization, and acceleration on modern supercomputing architectures. In this article, we apply the algorithm to model a one-dimensional radio frequency capacitively coupled plasma discharge relevant to industrial applications. The energy-conserving approach closely matches the results from the momentum-conserving algorithm and retains accuracy even for cell sizes up to 8 times the electron Debye length. For even larger cells, the algorithm loses accuracy due to poor resolution of steep gradients within the radio frequency sheath. Accuracy can be recovered by adopting a non-uniform grid, which resolves the sheath and allows for cell sizes up to 32 times the electron Debye length in the quasi-neutral bulk of the discharge. The effect is an up to 8 times reduction in the number of required simulation cells, an improvement that can compound in higher-dimensional simulations. We therefore consider the explicit energy-conserving algorithm as a promising approach to significantly reduce the computational cost of full-scale device simulations and a pathway to delivering kinetic simulation capabilities of use to industry.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Direct implicit and explicit energy-conserving particle-in-cell methods for modeling of capacitively coupled plasma devices

Achieving large-scale kinetic modeling is a crucial task for the development and optimization of modern plasma devices. With the trend of decreasing pressure in applications, such as plasma etching, kinetic simulations are necessary to self-consistently capture the particle dynamics. The standard, explicit, electrostatic, momentum-conserving particle-in-cell method suffers from restrictive stability constraints on spatial cell size and temporal time step, requiring resolution of the electron Debye length and electron plasma period, respectively. This results in a very high computational cost, making the technique prohibitive for large volume device modeling. We investigate the direct implicit algorithm and the explicit energy conserving algorithm as alternatives to the standard approach, both of which can reduce computational cost with a minimal (or controllable) impact on results. These algorithms are implemented into the well-tested EDIPIC-2D and LTP-PIC codes, and their performance is evaluated via 2D capacitively coupled plasma discharge simulations. The investigation reveals that both approaches enable the utilization of cell sizes larger than the Debye length, resulting in a reduced runtime, while incurring only minor inaccuracies in plasma parameters. The direct implicit method also allows for time steps larger than the electron plasma period; however, care must be taken to avoid numerical heating or cooling. It is demonstrated that by appropriately adjusting the ratio of cell size to time step, it is possible to mitigate this effect to an acceptable level.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2019

Filamentation of capacitively coupled plasmas in large magnetic fields

Over the last decade, dusty plasma research has sought to explore the physics of magnetized dusty plasmas. Due to the small charge-to-mass ratio of micron-sized dust grains, magnetic fields of B ≥ 1 T are needed to magnetize these particles. A peculiar phenomenon that occurs in capacitively coupled, glow discharge dusty plasmas at high magnetic fields that are perpendicular to the electrodes is the formation of stationary or mobile filamentary structures that are aligned along the magnetic field. In experiments, these filaments are found to form at a low neutral gas pressure, low applied radio frequency power, and a high magnetic field. This paper reports on new simulations of capacitively coupled plasmas at a high magnetic field for a configuration with a powered metal electrode and a grounded electrode with a dielectric barrier. It is shown that for this configuration, it is possible to form filamentary structures that appear in the electron density, potential, and light emission, which have properties that scale qualitatively with experiments. Finally, for these conditions, the dielectric strength of the boundary is most strongly correlated with the formation of the filaments. Implications of these observations and how they could be used to motivate future experiments are discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

On the importance of excited state species in low pressure capacitively coupled plasma argon discharges

In the past three decades, first principles-based fully kinetic particle-in-cell Monte Carlo collision (PIC/MCC) simulations have been proven to be an important tool for the understanding of the physics of low pressure capacitive discharges. However, there is a long-standing issue that the plasma density determined by PIC/MCC simulations shows quantitative deviations from experimental measurements, even in argon discharges, indicating that certain physics may be missing in previous modeling of the low pressure radio frequency (rf) driven capacitive discharges. In this work, we report that the energetic electron-induced secondary electron emission (SEE) and excited state atoms play an important role in low pressure rf capacitive argon plasma discharges. The ion-induced secondary electrons are accelerated by the high sheath field to strike the opposite electrode and produce a considerable number of secondary electrons that lead to additional ionizing impacts and further increase of the plasma density. Importantly, the presence of excited state species even further enhances the plasma density via excited state neutral and resonant state photon-induced SEE on the electrode surface. The PIC/MCC simulation results show good agreement with the recent experimental measurements in the low pressure range (1–10 Pa) that is commonly used for etching in the semiconductor industry. At the highest pressure (20 Pa) and driving voltage amplitudes 250 and 350 V explored here, the plasma densities from PIC/MCC simulations considering excited state neutrals and resonant photon-induced SEE are quantitatively higher than observed in the experiments, requiring further investigation on high pressure discharges.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Erosion of focus rings in capacitively coupled plasma etching reactors

In plasma etching reactors, the structure surrounding the wafer, often called a focus ring (FR), plays an important role in maintaining uniform fluxes of reactants across the wafer. The FR is typically made of dielectric materials. During the plasma etching process, the sheath that forms over the wafer to accelerate ions anisotropically into the surface extends over the FR. Electrical charging of the FR modifies the sheath relative to that over the wafer. On the one hand, one wants the sheath to be uniform across the wafer-FR boundary to enable uniform fluxes to the edge of the wafer. On the other hand, maintaining a high voltage sheath over the FR will erode the FR, which is undesirable as the FR is a consumable component that must be periodically replaced in high volume manufacturing. In this work, we computationally investigated the consequences of dielectric constant ε of the FR materials on erosion of the FR. The series capacitance of the FR and its underlying structure is typically smaller than that of the wafer and its underlying structure. As a result, the FR charges quickly relative to the wafer, which then reduces the voltage across the sheath on top of the FR. The ion energy and angular distributions (IEADs) striking the FR are, therefore, generally lower in energy with a broader angular distribution. With ε = 2, the ion energies striking the middle to the outer edge of the FR are 30–180 eV, whereas for ε = 100, the ion energies are 120–380 eV. At the transition between the wafer and the FR, there is a skew in the IEAD as large as 15° that results from the difference in sheath thickness above the wafer and the FR. This skew and the erosion rate across the FR are functions of the dielectric constant of the FR material. With low ε, the FR charges quickly, less plasma is produced above the FR, and there is less voltage across the sheath that results in less FR erosion. Increasing ε of the FR produces a higher sheath voltage as well as higher ion fluxes over the FR, which increases erosion, while the skew at the edge of the wafer is less severe. Further, the material of the subsurface portion of the FR, which dominates its capacitance, is an important consideration in the design of the substrate assembly.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Field reversal in low pressure, unmagnetized radio frequency capacitively coupled argon plasma discharges

In general, the radio frequency (rf) electric field within a sheath points toward the metal electrode in low pressure, unmagnetized rf electropositive capacitively coupled plasma (CCP) glow discharges. This is due to the large ratio of electron to ion mobility and the formation of an ion sheath. In this work, we studied, using fully kinetic particle-in-cell simulations, a reversed electric field induced by the strong secondary electron emission during the phase of sheath collapse in a high-voltage rf-driven low pressure CCP glow discharge. We explored the transition behavior of the formation of field reversal as a function of driving voltage amplitude and found that field reversal starts to form at around 750 V, for a discharge with an electrode spacing of 4 cm at 10 mTorr argon pressure driven at 13.56 MHz. Accordingly, the energy distribution function of electrons incident on the electrode shows peaks from around 3 to 10 eV while varying the driving voltage from 150 to 2000 V, showing potentially beneficial effects in plasma material processing where relatively directional electrons are preferred to solely thermal diffusion electrons.

Physics↗
DOE OSTI2024

Investigating instabilities in magnetized low-pressure capacitively coupled RF plasma using particle-in-cell (PIC) simulations

The effect of a uniform magnetic field on particle transport in low-pressure radio frequency (RF) capacitively coupled plasma (CCP) has been studied using a particle-in-cell model. Three distinct regimes of plasma behavior can be identified as a function of the magnetic field. In the first regime at low magnetic fields, asymmetric plasma profiles are observed within the CCP chamber due to the effect of $\overrightarrow{E}$ × $\overrightarrow{B}$ drift. As the magnetic field increases, instabilities develop and form self-organized spoke-shaped structures that are distinctly seen within the bulk plasma closer to the sheath. In this second regime, the spoke-shaped coherent structures rotate inside the plasma chamber in the -$\overrightarrow{E}$ × $\overrightarrow{B}$ direction, where $\overrightarrow{E}$ × $\overrightarrow{B}$ are the DC electric and magnetic field vectors, respectively, and the DC electric field exists in the sheath and pre-sheath regions. The spoke rotation frequency is in the megahertz range. As the magnetic field strength increases further, the rotating coherent spokes continue to exist near the sheath. The coherent structures are, however, accompanied by new small-scale incoherent structures originating and moving within the bulk plasma region away from the sheath. This is the third regime of plasma behavior. The threshold values of the magnetic field between these regimes were found not to vary with changing plasma reactor geometry (e.g., area ratio between ground and powered electrodes) or the use of an external capacitor between the RF-powered electrode and the RF source. The threshold values of the magnetic field between these regimes shift toward higher values with increasing gas pressure. Analysis of the results indicates that the rotating structures are due to the lower hybrid instability driven by density gradients and electron-neutral collisions. This paper provides guidance on the upper limit of the magnetic field for instability-free operation in low-pressure CCP-based semiconductor deposition and etch systems that use the external magnetic field for plasma uniformity control.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

High Throughput Source-less Plasma Deposition of Structured Silicon Anodes for Lithium-Ion Batteries

Amprius developed a manufacturing solution for silicon nanowire anode that relies on an inexpensive, high throughput, and high gas precursor utilization plasma deposition method that uses the anode foils as electrodes for plasma generation. The capacitively couple plasma (CCP) method is used in semiconductor and photovoltaic industry and Amprius modified existing high throughput equipment to use anode foils and to deposit amorphous silicon. The equipment was installed ahead of the program at Amprius site. The rest of the tasks included foil handling and process development. The equipment passed site acceptance tests (SAT) and the process parameter mapping was completed, indicating that the target process window limits produce output materials at the rate and with yield and specifications that meet the manufacturing target criteria. Amprius has hired supporting personnel to optimize processes and run the equipment. A parallel task verified the baseline performance of the silicon anode material, to be used as reference for the new manufacturing method.

25 ENERGY STORAGE↗
DOE OSTI2024

Numerical thermalization in 2D PIC simulations: Practical estimates for low-temperature plasma simulations

The process of numerical thermalization in particle-in-cell (PIC) simulations has been studied extensively. It is analogous to Coulomb collisions in real plasmas, causing particle velocity distributions (VDFs) to evolve toward a Maxwellian as macroparticles experience polarization drag and resonantly interact with the fluctuation spectrum. This paper presents a practical tutorial on the effects of numerical thermalization in 2D PIC applications. Scenarios of interest include simulations, which must be run for many thousands of plasma periods and contain a population of cold electrons that leave the simulation space very slowly. This is particularly relevant to many low-temperature plasma discharges and materials processing applications. We present numerical drag and diffusion coefficients and their associated timescales for a variety of grid resolutions, discussing the circumstances under which the electron VDF is modified by numerical thermalization. Though the effects described here have been known for many decades, direct comparison of analytically derived, velocity-dependent numerical relaxation timescales to those of other relevant processes has not often been applied in practice due to complications that arise in calculating thermalization rates in 1D simulations. Using these comparisons, we estimate the impact of numerical thermalization in several examples of low-temperature plasma applications including capacitively coupled plasma discharges, inductively coupled plasma discharges, beam plasmas, and hollow cathode discharges. Finally, we discuss possible strategies for mitigating numerical relaxation effects in 2D PIC simulations.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Voltage waveform tailoring for high aspect ratio plasma etching of SiO 2 using Ar/CF 4 /O 2 mixtures: Consequences of low fundamental frequency biases

The use of non-sinusoidal waveforms in low pressure capacitively coupled plasmas intended for microelectronics fabrication has the goal of customizing ion and electron energy and angular distributions to the wafer. One such non-sinusoidal waveform uses the sum of consecutive harmonics of a fundamental sinusoidal frequency, f 0 , having a variable phase offset between the fundamental and even harmonics. In this paper, we discuss results from a computational investigation of the relation between ion energy and DC self-bias when varying the fundamental frequency f 0 for capacitively coupled plasmas sustained in Ar/CF 4 /O 2 and how those trends translate to a high aspect ratio etching of trenches in SiO 2 . The fundamental frequency, f 0 , was varied from 1 to 10 MHz and the relative phase from 0° to 180°. Two distinct regimes were identified. Average ion energy onto the wafer is strongly correlated with the DC self-bias at high f 0 , with there being a maximum at φ = 0° and minimum at φ = 180°. In the low frequency regime, this correlation is weak. Average ion energy onto the wafer is instead dominated by dynamic transients in the applied voltage waveforms, with a maximum at φ = 180° and minimum at φ = 0°. The trends in ion energy translate to etch properties. In both, the high and low frequency regimes, higher ion energies translate to higher etch rates and generally preferable final features, though behaving differently with phase angle.

36 MATERIALS SCIENCE↗