Impurity profile and energy band diagram for the cuprous sulfide-cadmium sulfide heterojunction
Impurity profile and energy band diagram for cuprous sulfide-cadmium sulfide heterojunction
Brandhorst, H. W., Jr.↗
SEARCH · Engineering Papers
Results for “band diagrams”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Impurity profile and energy band diagram for the Cu sub 2 S-CdS heterojunction.
Impurity profiles and energy band diagram for cuprous sulfide-CdS heterojunction based on capacitance, Hall and electron microprobe measurements
Brandhorst, H. W., Jr.↗
Effect of InAlAs window layer on efficiency of indium phosphide solar cells
Indium phosphide (InP) solar cell efficiencies are limited by surface recombination. The effect of a wide bandgap, lattice-matched indium aluminum arsenide (In(0.52)Al(0.48)As) window layer on the performance of InP solar cells was investigated by using the numerical code PC-1D. The p(+)n InP solar cell performance improved significantly with the use of the window layer. No improvement was seen for the n(+)p InP cells. The cell results were explained by the band diagram of the heterostructure and the conduction band energy discontinuity. The calculated current voltage and internal quantum efficiency results clearly demonstrated that In(0.52)Al(0.48)As is a very promising candidate for a window layer material for p(+)n InP solar cells.
Jain, Raj K.↗
Effect of InAlAs window layer on the efficiency of indium phosphide solar cells
Indium phosphide (InP) solar cell efficiencies are limited by surface recombination. The effect of a wide-bandgap lattice-matched indium aluminum arsenide (In0.52Al0.48As) window layer on the performance of InP solar cells was investigated using a numerical code PC-1D. The p(+)n InP solar cell performance improves significantly with the use of a window layer. No improvement is seen for n(+)p InP cells. Cell results are explained by the band diagram of the heterostructure and the conduction-band energy discontinuity. The calculated I-V and internal quantum efficiency results clearly demonstrate that In0.52Al0.48As is a promising candidate as a window layer material for p(+)n InP solar cells.
Jain, R. K.↗
Scalar Atomic Defect-Based Solid-State Self-calibrating Magnetometer (3SM) for Space Plasma Analysis
The Earth’s magnetosphere is a system of multiple, co-located particle populations interacting via plasma waves. Things to understand are driving processes, radiation belt and ring current issues, auroral physics, internal plasma processes, and magnetosphere-ionosphere mapping issues. These plasma-physics processes enable the Earth’s magnetosphere to evolve in response to temporal changes in the solar wind and they underlie the phenomena of space weather, which impacts spacecraft systems, astronauts, radio communications, and ground based electric-power grids. The objective of 3SM is to measure magnetic field strength and to calibrate the Vector Magnetometer (VM) device to maintain absolute accuracy during a mission. The 3SM features make the instrument preferably suited not only for the traditional role of scalar magnetometers as absolute references for the calibration of the on-board vector instruments, but also for extended operational capacities, such as higher frequency scalar measurements (of potential interest for magnetosphere studies for the low frequency part of the spectrum) or autonomous scalar / vector operations. Diamond has been the solid-state platform of choice for quantum device technologies for some time, however, it suffers from difficulties such as scalability, integration, and cost. While the diamond platform is very useful for quantum technologies, further development is needed to make it viable. The material platform of choice for NASA Glenn’s Quantum Sensing And Spin Physics (Q-SASP) is silicon carbide (SiC). This is due to the much higher industry development of the SiC material platform for high-power and high-temperature electronics. It leverages both the decades-long SiC development expertise and infrastructure at NASA Glenn and its growing capabilities in quantum metrology. To make SiC devices usable for quantum technologies such as quantum sources, a much deeper understanding of defects is needed. Q-SASP is developing quantum metrology capabilities to evaluate the energy structure, defect formation energy, band structure augmentation, generation/recombination rates, and limits of dipole-dipole coupling in non-metal implanted SiC devices. This can be achieved by analysis of zero-field splitting, low-field resonance, and singlet-triplet mixing through various forms of Electrically Detectable Magnetic Resonance (EDMR) and Near-Zero Field Magnetic Resonance (NZFMR) spectroscopy. This work will discuss recent system developments, device developments, computational modeling, and spectroscopy results and analysis of defects created by non-metal implantations in SiC devices. The defect formation energies of V Si ,V C , V C V Si , N C V Si , N Si , N C in 4H-SiC are previously reported values in other research [2]-[3]. The defect formation energies of PSi and PC were calculated in GPAW [fig 1A]. The basic underlying mechanism of the zero-field phenomenon is the mixing of singlet and triplet states [4]-[5]. In most spin-dependent transport, two electron spins are involved, and thus one must consider each of their interactions with the field. We investigated the electronic and magnetic properties of 4H-SiC and 6H-SiC. The defect formation energy helps us determine what types of defects we are observing in the SiC EDMR experiment. They have very low formation energy (it is negative). The phosphorus substitution in 4H-SiC is a very stable defect. The band diagrams provide us with vital information about how the electronic properties of SiC (such as band gap) change as we add non-metal defects. The zero-field splitting parameters allow us to study the inflection point in the NZFMR [fig 1B]. We clearly observed zero-field splitting. We also noted that the zero-field splitting remained constant with changing bias. We aspect it zero-field splitting to remain constant while the hyperfine and exchange interaction perturbations shift under the influence of an external magnetic field. This is the essence of quantum magnetometry and self-calibration.
space plasma↗
Effect of interfacial oxide layers on the current-voltage characteristics of Al-Si contacts
Aluminum-silicon contacts with very thin interfacial oxide layers and various surface impurity concentrations are studied for both n and p-type silicon. To determine the surface impurity concentrations on p(+)-p and n(+)-n structures, a modified C-V technique was utilized. Effects of interfacial oxide layers and surface impurity concentrations on current-voltage characteristics are discussed based on the energy band diagrams from the conductance-voltage plots. The interfacial oxide and aluminum layer causes image contrasts on X-ray topographs.
Porter, W. A.↗
Analysis of energy states in modulation doped multiquantum well heterostructures
A precise and effective numerical procedure to model the band diagram of modulation doped multiquantum well heterostructures is presented. This method is based on a self-consistent iterative solution of the Schroedinger equation and the Poisson equation. It can be used rather easily in any arbitrary modulation-doped structure. In addition to confined energy subbands, the unconfined states can be calculated as well. Examples on realistic device structures are given to demonstrate capabilities of this procedure. The numerical results are in good agreement with experiments. With the aid of this method the transitions involving both the confined and unconfined conduction subbands in a modulation doped AlGaAs/GaAs superlattice, and in a strained layer InGaAs/GaAs superlattice are identified. These results represent the first observation of unconfined transitions in modulation doped multiquantum well structures.
Ji, G.↗
Modeling of InGaAsSb-Based Avalanche Photodetectors for 2-Micron Wavelengths
The main focus of this research is to study and evaluate the potential of InGaAsSb-AlGaAsSb based 2 micron avalanche photo-detectors. The photodetector contains a separate absorption and multiplication region (SAM) structure. The analysis has mainly been done to understand the electrical response characteristics of the devices existing at NASA, and to evaluate alternate structures proposed. Calculating the current flow for the existing detector structure, on the basis of its energy band diagram, is important. This analysis also helps to find shortcomings in the existing detector structure. It is shown that, unfortunately, the existing structure cannot lead to strong multiplication or voltage dependent gain. Two alternate structures are suggested, that could overcome the inherent flaws, and help achieve improved performance. These devices are obtained through modifications of the original structure, which include varying the doping levels, and changing the thicknesses of detector sub-regions. The results of our study are presented and discussed.
Joshi, Ravindra P.↗
In Situ Electrochemistry of Buried Interfaces in Metal Halide Perovskites: Probing Energy Bands, Halide Redox Activity, and Kinetics
Control over charge injection and extraction processes across buried interfaces is fundamental for all (opto)electronic multilayer device platforms, necessitating detailed understanding of local structural and chemical differences that promote defect formation, distort energetic band-edge alignments, and alter charge transport processes. Herein, the implementation of a low-cost electroanalytical methodologies’ tool suite is described to quantitatively characterize buried interfaces and redox reactions in printable, mixed electrical–ionic, and redox-active metal halide perovskites and a prototypical hole-transporting nickel oxide (NiO x ) thin film. The objective is to demonstrate the power of electrochemical methodologies to improve the nanoscale understanding of complex interfaces within optoelectronic devices by providing case studies on how to: i) differentiate between electronic and chemical properties in NiO x contacts; ii) measure changes in reversibility of halide redox reactions via NiO x surface states; iii) assess energy alignment and charge transport across (modified) buried interfaces; and iv) quantify defects at buried interfaces that change with modifiers and differences in perovskite processing, including increasing defect concentrations when films are slot-die-coated versus spin-cast. The collective approach addresses major challenges in understanding the precise energy landscape and interface reactivity under relevant electric fields that mimic operando conditions (away from equilibrium) and across length scales in thin film device formats.
(spectro)electrochemistry↗
Switches, lasers and electronically-hopped beam antennas in space - NASA's advanced communications technology satellite
The proposed design and operation of the Advanced Communications Technology Satellite (ACTS) are described. The ACTS is a three-axis stabilized spacecraft with an in-orbit weight of 2300 lbs and a beginning-of-life power of 1770 W; it is composed of a 20 GHz 2.2 m downlink antenna, a 30 GHz 3.3 m uplink antenna, a 1 m steerable antenna, and a laser package. The space segment communications payload uses high and low burst rate modes; the operations of these modes are discussed. The components of the laser intersatellite link instrument package are examined. Consideration is given to the ACTS's antennas, RF matrix switch system, and the base band processor. Diagrams of the ACTs systems are presented.
Lovell, Robert R.↗
LWIR detector research in InAsSb/InAs
The InAsSb/InSb strained-layer system forms a type-II superlattice in the Sb-rich region of the phase diagram. The band gap of InAsSb/InSb strained-layer superlattices grown on lattice-matched buffers can be varied continuously to produce semiconducting systems with band gaps ranging from that of InSb (0.23 eV with an absorption edge at 5.5 microns at 77 K) to 0. The semiconductor to semimetal transition occurs at As concentrations of approximately 33 percent, with the precise value dependent upon the strain and quantum well dimensions. At higher As content, the system is a semimetal. The authors fabricated photovoltaic detectors with high D asterisk at 77 K at wavelengths beyond 10 microns, and both photovoltaic and photoconductive detectors have been demonstrated with response to 15 microns. The photoconductive detectors exhibit gain of up to 100. Details of the materials growth, studies of the band structure and properties, device processing and the detector performance observed to date in these systems are discussed.
Peercy, Paul S.↗
The Hawaii K-band galaxy survey. 3: Spectroscopy of K less than 20 galaxies
We present spectra and multicolor (B, I, K) data for near-infrared (K) selected spatially complete magnitude limited (K is less than 20) galaxy samples from the Hawaii Survey. The redshift indentification of the sample of 298 galaxies is substantially complete to a B magnitude of 26 and an I magnitude of 22.5, and identification of observed galaxies ranges from nearly 100% completeness at K is less than 18 to approximately 70% completeness at K = 19-20. We note that many of the unidentified objects appear to be red (I-K) objects which are flat in the optical and spectroscopically featureless. Strengths of spectral-line features and breaks are tabulated for the 262 galaxies with reasonably secure redshifts. The measured redshifts may nearly all fall at z is less than or approximately 1, with the exception of a compact absorption-line object at z = 2.35. At K is less than or equal to 18, the redshift distribution is well fitted by a model with no luminosity evolution, implying that from the K-band Hubble diagram, the Hubble constant can vary at most by 10% over the redshift range from z approximately 0.025 to 0.25, and that positive luminosity evolution at any significant level between z = 0 and z = 1 is ruled out. However, the evolution of both the emission-line strengths and the 4000 A break indicates that galaxies were undergoing significantly more star formation at z = 1 than at the present time.
Songaila, A.↗
A comparison of compact, presumably young with extended, evolved radio active galactic nuclei
Context.The triggering and evolution of active galactic nuclei (AGNs) and the interaction of the AGN with its host galaxy is an important topic in extragalactic astrophysics. Radio sources with peaked spectra (peaked spectrum sources, PSS) and compact symmetric objects (CSO) are powerful, compact, and presumably young AGNs and therefore particularly suitable to study aspects of the AGN-host connection. Aims.We use a statistical approach to investigate properties of a PSS-CSO sample that are related to host galaxies and could potentially shed light on the link between host galaxies and AGNs. The main goal is to compare the PSS-CSO sample with a matching comparison sample of extended sources (ECS) to see if the two have significant differences. Methods.We analysed composite spectra, diagnostic line diagrams, multi-band spectral energy distributions (MBSEDs), star formation (SF) indicators, morphologies, and cluster environments for a sample of 121 PSSs and CSOs for which spectra are available from the Sloan Digital Sky Survey (SDSS). The statistical results were compared with those of the ECS sample, where we generally considered the two subsamples of quasi-stellar objects (QSOs) and radio galaxies separately. The analysis is based on a large set of archival data in the spectral range from the ultraviolet to mid-infrared. Results.We find significant differences between the PSS-CSO and the ECS sample. In particular, we find that the ECS sample has a higher proportion of passive galaxies with a lower star formation activity. This applies to both sub-samples (QSOs or radio galaxies) as well as to the entire sample. The star formation rates of the PSS-CSO host galaxies with available data are typically in the range ∼0 to 5 ℳ ⊙ yr −1 , and the stellar masses are in the range 3 × 10 11 to 10 12 ℳ ⊙ . Secondly, in agreement with previous results, we find a remarkably high proportion of PSS-CSO host galaxies with merger signatures. The merger fraction of the PSS-CSO sample is 0.61 ± 0.07, which is significantly higher than that of the comparison sample (0.15 ± 0.06). We suggest that this difference can be explained by assuming that the majority of the PSSs and CSOs cannot evolve to extended radio sources and are therefore not represented in our comparison sample.
Astronomy & Astrophysics↗
Networks systems and operations
The application of wideband communication techniques for data links with satellites is discussed. A diagram of the demand assigned voice communications system is provided. The development of prototype integrated spacecraft paramps at S- and C-bands is described and the performance of space-qualified paramps is tabulated. The characteristics of a dual parabolic cylinder monopulse zoom antenna for use with the tracking and data relay satellite system (TDRSS) are analyzed. The development of a universally applicable transponder at S-band is reported. A block diagram of the major subassemblies of the S-band transponder is included. The technology aspects of network timing and synchronization of communication systems are to show the use of the Omega navigation system. The telemetry data compression system used during the Skylab program is evaluated.
Source record↗
IRAS results on outer galaxy star formation
An infrared defined (60 micron) sample of IRAS sources were systematically studied in order to investigate star formation in the outer Galaxy. Five percent of the sample are point sources with IRAS spectra that suggest the emission is from a dust shell surrounding a mature star. Ninety five percent have spectra where flux density strictly rises with wavelength. The sources are extended, and it is shown that Point Source Catalog fluxes seriously underestimate total fluxes. CO kinematic distances were reliably assigned to two thirds of the sources. Most of the infrared luminosities correspond to B spectral types. Six cm continuum emission were detected from all sources inferred to have spectral type B1 or earlier. The combined IRAS/CO/6 cm data show these sources are young, moderately massive stars that are embedded in interstellar clouds. The young embedded sources define a distinct band in an IRAS color-colar diagram. Normal IRAS galaxies fall in the same band, consistent with the interpretation that their infrared emission is due to star formation.
Terebey, Susan↗
Ground based preparation for microgravity growth of alloy semiconductors
Ground-based research conducted in order to prepare a microgravity space flight experiment is presented. The thermophysical properties of a PbSnTe alloy used for semiconductors are investigated, and furnace calibration and fluid-flow measurements are performed. The alloy has a zero energy crossing at approximately 40 percent SnTe in its band-gap vs composition diagram, which facilitates the design of long-wavelength IR detectors and lasers. The uniformity of devices made from this material depends on the ratio of PbTe and SnTe and requires the composition of the crystal growth to be closely controlled. The main obstacle to such control is the fact that liquid of this material is always solutally or thermally unstable, and, in a high-temperature gradient, the double convective instability cannot be made stable by balancing thermal and solutal expansion. In order to extend the science of crystal growth, the limits of suppression of convection have to be tested in low earth orbit.
Fripp, Archibald L.↗
Growth of Compound Semiconductors in a Low Gravity Environment: Microgravity Growth of PbSnTe
The growth of the alloy compound semiconductor lead tin telluride (PbSnTe) was chosen for a microgravity flight experiment in the Advanced Automated Directional Solidification Furnace (AADSF), on the United States Microgravity Payload-3 (USMP-3) and on USMP-4 Space Shuttle flights in February, 1996, and November, 1997. The objective of these experiments was to determine the effect of the reduction in convection, during the growth process, brought about by the microgravity environment. The properties of devices made from PbSnTe are dependent on the ratio of the elemental components in the starting crystal. Compositional uniformity in the crystal is only obtained if there is no significant mixing in the liquid during growth. Lead tin telluride is an alloy of PbTe and SnTe. The technological importance of PbSnTe lies in its band gap versus composition diagram which has a zero energy crossing at approximately 40% SnTe. This facilitates the construction of long wavelength (>6 micron) infrared detectors and lasers. Observations and experimental methods of crystal growth of PbSnTe on both Space Shuttle Flights are presented.
Fripp, Archibald L.↗
Growth of Compound Semiconductors in a Low Gravity Environment: Microgravity Growth of PbSnTe
The growth of the alloy compound semiconductor lead tin telluride (PbSnTe) was chosen for a microgravity flight experiment in the Advanced Automated Directional Solidification Furnace (AADSF), on the United States Microgravity Payload-3 (USNP-3) in February, 1996 and on USNW- 4 in November, 1997. The objective of these experiments was to determine the effect of the reduction in convection, during the growth process, brought about by the microgravity environment. The properties of devices made from PbSnTe, an alloy of PbTe and SnTe, are dependent on the ratio of the elemental components in the starting crystal. Compositional uniformity in the crystal is only obtained if there is no significant mixing in the liquid during growth. The technological importance of PbSnTe lies in its band gap versus composition diagram which has a zero energy crossing at approximately 40% SnTe. This facilitates the construction of long wavelength (greater than 6 gm) infrared detectors and lasers. The properties and utilization of PbSnTe are the subject of other papers. 1,2 PbSnTe is also interesting from a purely scientific point of view. It is, potentially, both solutally and thermally unstable due to the temperature and density gradients present during growth. Density gradients, through thermal expansion, are imposed in directional solidification because temperature gradients are required to extract heat. Solutal gradients occur in directional solidification of alloys due to segregation at the interface. Usually the gradients vary with both experiment design and inherent materials properties. In a simplified one dimensional analysis with the growth axis parallel to the gravity vector, only one of the two instabilities work at a time. During growth, the temperature in the liquid increases ahead of the interface. Therefore the density, due to thermal expansion, is decreasing in that direction. However, the phase diagram shows that the lighter SnTe is preferentially rejected at the interface. This causes the liquid density to increase with distance away from the interface.
Fripp, A. L.↗