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In this paper, we will discuss the modification of the band bending near the CCD surface by low-temperature MBE and report the applicatio of delta-doped CCDs to low-energy electron detection.
The pressure broadening and line coupling cross sections in the Fano-Ben Reuven theory of line shapes are calculated for bending bands of CO2 in a bath of He atoms. Molecular collision dynamics are simplified by invoking the infinite order sudden (IOS) approximation for molecular rotational and vibrational angular momentum in a manner similar to but not identical with the method developed by Clary and shown to be accurate for CO2-He. Numerical values are obtained using a pairwise additive interaction potential developed by Clary. Predictions are in good accord with data for various infrared bands and pure rotational Raman spectra. It is found that all pressure broadening and state-to-state cross sections depend on only a few dynamical factors (generalized IOS cross sections) and are therefore closely interrelated. Results are used to assess models developed previously to analyze line shapes in this and similar systems.
UV and X-ray photoelectron spectroscopic methods are presently used to study the band-bending behavior and interfacial chemistry of Al, In, Ag, and Pt overlayers on vacuum-cleaved p-CdTe and p-ZnTe (110). All four metals are found to yield Schottky barriers on CdTe and ZnTe. The metal-induced gap states model prediction of a difference in barrier heights for two semiconductors which is dependent on their band lineup is borne out by the results for Ag, Pt, and Al, but not for In. Reaction and intermixing for Al, Ag, and Pt overlayers on CdTe and ZnTe indicate that these interfaces are not ideal.
The Origins, Spectral Interpretation, Resource Identification, and Security–Regolith Explorer (OSIRIS-REx) mission to carbonaceous asteroid (101955) Bennu performed detailed mapping with a suite of instruments to characterize the composition and geology of its surface. Here we use data from the OSIRIS-REx Thermal Emission Spectrometer (OTES) instrument to investigate the relationship of OTES-derived spectral indices to other derived data products from OTES, the OSIRIS-REx Camera Suite (OCAMS), and the OSIRIS-REx Visible and InfraRed Spectrometer (OVIRS) at global and local scales. We quantitatively confirm that high values of the OTES silicate stretching slope (from ∼10 to ∼12 μm) in midday spectra that are indicative of thin and/or patchy dust cover are strongly associated with low thermal inertia (high porosity), low albedo boulders on Bennu. These high porosity boulders have brecciated textures with embedded clasts that likely originated on Bennu's parent body or during its disruption. The high porosity of these boulders is a key factor in the local production of the dust or its entrapment, as some large, brecciated boulders with a lower porosity have little evidence of dust. A second OTES spectral parameter, the silicate bending band depth near 22.7 μm applied to early evening spectra, is not correlated to thermal inertia, but is weakly to strongly correlated to albedo, OVIRS-derived 1.05 μm and 2.74 μm band depths, OVIRS-derived hydrogen abundance, and modeled nanophase troilite abundance. In several regions on Bennu there is a strong spatial relationship between these parameters, whereby areas with shallower silicate bending bands also have shallower 1.05 μm and 2.74 μm bands and lower albedo with higher nanophase troilite abundances. These correlations, combined with analysis of the silicate bending band in laboratory experiments of space weathered and mildly heated carbonaceous chondrites, suggests that decreased silicate bending band depths signify decomposition of phyllosilicates, likely Fe-bearing, due to space weathering or mild heating (<600 °C) via solar radiation during Bennu's time in near-Earth space. There is a strong association of larger silicate bending band depths in areas dominated by small rocks and unresolved material and in areas with small (≤ 25 m) craters identified as the spectrally reddest on Bennu, suggesting that this material has been more recently exposed due to impact and/or mass wasting processes. The shallowest silicate bending depths are associated with larger rocks and boulders that appear to have the longest surface exposure history, although there is band depth variation among them suggesting either initial composition variation that resulted in different responses to space weathering or heating, or varied exposure history of individual boulders themselves. We predict that any grains returned from Bennu with a significant surface exposure history will be characterized by shallower 22.7 μm, 1.05 μm and 2.7 μm band depths and increased sulfide (troilite) abundance, as well as textural and chemical evidence for phyllosilicate dehydration.
Photoelectron spectroscopy is frequently used to study band bending in semiconductors due to charge stored in surface or interface states. This paper examines how such experimental results are modified by photovoltages generated within the band-bending region not only by ambient light sources, but by the incident X-rays themselves. Recent experiments which have suggested dopant-dependent and reversible temperature-dependent band bending in the initial stages of formation of the metal-GaAs(110) interface are used as an example. It is shown that the reported dependence derives from a photovoltaic effect.
A model is proposed for the recently observed lower Schottky barrier for holes in air than in vacuum at a metallic electrode - semiconducting carbon nanotube (CNT) junction. In air, the CNT is oxidized. The oxygen molecules on the CNT surface will attract negative charges and will be negatively charged. The negative charges on the solid surface generally enhance the surface dipole and provide stronger electron confinement within the solid. Thus the CNT work function will increase in air. Then the Schottky barrier for holes will have to increase in air according to the standard band-alignment theory, but this is against the experiment. In order to overcome this difficulty, we propose a new Schottky barrier model, assuming that there is a transition region between the electrode and the CNT, where an appreciable potential can drop. We assume that electrodes are placed at the side of the CNT and the contact is formed via the van der Waals interaction. Since the electrode surface is not atomically flat in practical situations, the contact will not be intimate and there will be a transition region before the usual metallic bulk structure starts. In this view, the Schottky barrier is determined not only by the work function difference of the electrodes and the CNT, but also by the potential drop in the transition region. The oxidation increases the potential drop and leads to a lower Schottky barrier for holes. This relation will be demonstrated in a graphical manner by expressing the potential drop as a function of CNT band bending. The potential drop is comparable to the CNT band gap when, e.g., the transition region is about a few Angstroms thick, the oxygen molecule coverage is about 10 %, and an oxygen molecule is charged by about 0.01-0.1 of the unit charge (1-10 % of molecules are charged). The proposed mechanism prevails for both p - and n-CNTs. The model consistently explains the CNT oxidation experiments reported so far.
A highly efficient DC electroluminescent display is presented. A variably spaced superlattice structure is used to produce high energy injection of electrons into a ZnSe:Mn active layer in which impact excitation of the Mn centers can occur. The device is predicted to operate at an applied external bias on order of magnitude less than the best DC electroluminescent device to date. The device is predicted to have comparable brightness, since it operates in the saturation regime. The improved efficiency stems from avoiding significant energy loss to phonons. The electrons sequentially tunnel through a multilayer ZnSe/CaSrF2 stack under bias and emerge into the active layer at an energy equal to the conduction band bending. The injection energy is chosen to coincide with the impact excitation energy of the Mn centers. Different device designs are presented and their performance is predicted.
A new, highly efficient dc electroluminescent display is presented. A variably spaced superlattice scheme is suggested herein which can produce high-energy injection of electrons into a ZnSe:Mn active layer in which impact excitation of the Mn centers can occur. The device is predicted to operate at an applied external bias an order of magnitude less than the best dc electroluminescent device to date. The device is predicted to have comparable brightness, since it operates in the saturation regime. The improved efficiency stems from avoiding significant energy loss to phonons. The electrons sequentially tunnel through a multilayer stack under bias and emerge into the active layer at an energy equal to the conduction-band bending. The injection energy is chosen to coincide with the impact excitation energy of the Mn centers. Different device designs are presented and their performance is predicted.
Scanning tunneling microscopy (STM) methods are used to directly control the barrier height of a metal tunnel tip-semiconductor tunnel junction. Barrier behavior is measured by tunnel current-voltage spectroscopy and compared to theory. A unique surface preparation method is used to prepare a low surface state density Si surface. Control of band bending with this method enables STM investigation of semiconductor subsurface properties.
Interfacial morphology and Fermi-level pinning behavior at the interfaces of Al, Ag, and Pt with UHV-cleaved CdTe and ZnTe are studied using X-ray photoelectron and ultraviolet photoemission spectroscopies. Results are compared to metal/HgCdTe interface formation. For Al/CdTe, a case is found where significantly greater intermixing occurs in CdTe than seen on HgCdTe. The Al/ZnTe interface is also more abrupt than Al/CdTe. Band bending results for interfaces of all three metals with p-CdTe and p-ZnTe are presented and implications for metal/HgZnTe interface formation are considered.
The compositional significance of outstanding spectral features in the reflectance spectra of particulate igneous rocks was investigated by analyzing directional reflectance spectra, obtained with an FTIR spectrophotometer at 2.17-13.5 microns, of a suite of well-characterized igneous rocks ground to fine particle size. It was found that, using spectral features associated with the principal Christiansen frequency and with a region of relative transparency between the Si-O stretching and bending bands, it is possible to identify general rock type using the Walter and Salisbury (1989) SCFM chemical index, SCFM, defined as SCFM = SiO2/(SiO2 + CaO + FeO + MgO). It is emphasized, however, that the appearance and the wavelength of these features may be affected by environmental factors.
Seven rovibrational transitions of the (01/1/0)-(00/0/0) fundamental bending band of C3 have been measured with high precision with the use of a tunable far-infrared laser spectrometer. The C3 molecules were produced by laser vaporization of a graphite rod and cooled in a supersonic expansion. The astrophysically important nu-2 fundamental frequency is determined to be 63.416529(40)/cm. These measurements provide the basis for studies of C3 in the interstellar medium with far-infrared astronomy.
It is shown here that much of the recent photoelectron spectroscopy literature describing the onset of pinning in adsorbate-semiconductor systems at low temperature must be reinterpreted in light of surface photovoltaic effects. Two sources of surface charging are discussed, both of which are strongly enhanced at low temperature. The surface photovoltage resulting from separation of electron-hole pairs by the electric field in the depletion region is usually the dominant source of surface potential shifts, and causes flattening of the semiconductor bands. In addition, surface charging due to photoemission into the vacuum may reverse bias a p-type diode at low temperatures, causing increase band bending.
A two order-of-magnitude enhancement of photoluminescence intensity relative to untreated GaAs has been observed for GaAs surfaces coated with chemical vapor-deposited GaS. The increase in photoluminescence intensity can be viewed as an effective reduction in surface recombination velocity and/or band bending. The gallium cluster /(t-Bu)GaS/4 was used as a single-source precursor for the deposition of GaS thin films. The cubane core of the structurally characterized precursor is retained in the deposited film producing a cubic phase. Furthermore, a near-epitaxial growth is observed for the GaS passivating layer. Films were characterized by transmission electron microscopy, X-ray powder diffraction, and X-ray photoelectron and Rutherford backscattering spectroscopies.
A two order-of-magnitude enhancement of photoluminescence intensity relative to untreated GaAs has been observed for GaAs surfaces coated with chemical vapor-deposited GaS. The increase in photoluminescence intensity can be viewed as an effective reduction in surface recombination velocity and/or band bending. The gallium cluster (/t-Bu/GaS)4 was used as a single-source precursor for the deposition of GaS thin films. The cubane core of the structurally-characterized precursor is retained in the deposited film producing a cubic phase. Furthermore, a near-epitaxial growth is observed for the GaS passivating layer. Films were characterized by transmission electron microscopy, X-ray powder diffraction, and X-ray photoelectron and Rutherford backscattering spectroscopies.
The first characterization of the bending potential of the C7 cluster is reported via the observation of the v = 1(1) and v = 2 deg levels of the nu11 (pi u) bend as hot bands associated with the nu4 (sigma u) antisymmetric stretch fundamental. The lower state hot band rotational constants are measured to be 1004.4(1.3) and 1123.6(9.0) MHz, constituting a 9.3 and 22 percent increase over the ground state rotational constant, 918.89 (41) MHz. These large increases are strong quartic and sextic centrifugal distortion constants determined for the ground and nu 4 = 1 states are found to be anomalously large and negative, evidencing strong perturbations between stretching and bending modes.
Mechanical linkage allows adjacent parts to move relative to each other with low friction and with no chatter, slipping, or backlash. Low-friction joint of two surfaces in rolling contact, held in alinement by taut flexible bands. No sliding friction or "stick-slip" motion: Only rolling-contact and bending friction within bands. Proposed linkage intended for finger joints in mechanical hands for robots and manipulators.
In spite of the fact that the infrared spectroscopic properties of only a few isolated ionized polycyclic aromatic hydrocarbons (PAHs) are known, gaseous, ionized PAHs are thought to be responsible for a very common family of infrared interstellar emission bands. In order to provide a data base to test this hypothesis and, if borne out, to use this emission band family as a probe of many different interstellar environments, we are carrying out a thorough study of the infrared spectroscopic properties of neutral and ionized PAHs in argon matrices. Here we present the near and mid-infrared spectra of the cations of the five most thermodynamically favored PAHs up to coronene: phenanthrene, pyrene, benzo[e]pyrene, benzo[ghilperylene, and coronene. The properties of naphthalene, the first member of the series, are given elsewhere. The spectra of perdeuterated phenanthrene and pyrene are also reported. For those molecules which have been previously studied (pyrene, d(10)-pyrene, and coronene), band positions and relative intensities are in agreement. In all cases we report additional features. Absolute integrated absorbance values are given for the phenanthrene, perdeutero-phenanthrene, pyrene, benzo[ghi]perylene, and coronene cations. With the exception of coronene,the cation bands corresponding to the CC modes are typically 2-5 times more intense than those of the CH out-of-plane bending vibrations. For the cations the CC stretching and CH in-plane bending modes give rise to bands which are an order of magnitude stronger than for the neutral species, and the CH out-of-plane bends produce bands which are 5-20 times weaker than in the neutral species. This behavior is similar to that found in most other PAH cations studied to date. The astronomical implications of these PAH cation spectra are also discussed.