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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Spatiotemporal Observation of Quasi-Ballistic Transport of Electrons in Graphene

We report spatiotemporal observations of room-temperature quasi-ballistic electron transport in graphene, which is achieved by utilizing a four-layer van der Waals heterostructure to generate free charge carriers. The heterostructure is formed by sandwiching a MoS 2 and MoSe 2 heterobilayer between two graphene monolayers. Transient absorption measurements reveal that the electrons and holes separated by the type-II interface between MoS 2 and MoSe 2 can transfer to the two graphene layers, respectively. Transient absorption microscopy measurements, with high spatial and temporal resolution, reveal that while the holes in one graphene layer undergo a classical diffusion process with a large diffusion coefficient of 65 cm 2 s –1 and a charge mobility of 5000 cm 2 V –1 s –1 , the electrons in the other graphene layer exhibit a quasi-ballistic transport feature, with a ballistic transport time of 20 ps and a speed of 22 km s –1 , respectively. The different in-plane transport properties confirm that electrons and holes move independently of each other as charge carriers. Furthermore, the optical generation of ballistic charge carriers suggests potential applications for such van der Waals heterostructures as optoelectronic materials.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Diffusive and ballistic transport in thin InSb nanowire devices using a few-layer-graphene-AlO x gate

Abstract Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable quantum transport regimes has been studied theoretically, highlighting the importance of optimizing both growth and nanofabrication. In this work, we consider both aspects. We developed InSb NW with thin diameters, as well as a novel gating approach, involving few-layer graphene and atomic layer deposition-grown AlO x . Low-temperature electronic transport measurements of these devices reveal conductance plateaus and Fabry–Pérot interference, evidencing phase-coherent transport in the regime of few quantum modes. The approaches developed in this work could help mitigate the role of material and fabrication-induced disorder in semiconductor-based quantum devices.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Multi-frame x-ray radiography and image tracking for quantification of expansion in laser-driven tin ejecta microjets

One regime of experimental particle-laden flow study involves ejecta microjets—often defined as a stream of micrometer-scale particles generated through shock interaction with a non-uniform surface and generally travel above 1 km/s. In order to capture the change in characteristics as a function of propagation time, we apply a multi-frame x-ray radiography platform to observe and track the jet transport dynamics. A synchrotron x-ray source allows us to perform quantitative analyses and comparisons between the eight images captured by the imaging system. Observation of a single jet through time allows the use of a cross correlation algorithm to independently track various regions within the jet and quantify the jet expansion over time using normalized area and normalized areal density values. Through a comparison with the calculated values of ballistic transport, these findings show less expansion than expected for ballistically transporting particles. In conclusion, this work combines multi-frame synchrotron radiography with image tracking to establish a foundation for future studies on jet transport and particle interaction dynamics.

Sun, Yuchen [Lawrence Livermore National Laborator↗
DOE OSTI2024

Nature of polariton transport in a Fabry-Perot cavity

Fabry-Perot microcavities can strongly enhance interactions between light and molecules, leading to the formation of hybrid light-matter states known as polaritons. Polaritons possess much smaller effective masses and much larger group velocities when the molecules are resonant with cavity modes that have finite (nonzero) in-plane wave vectors, giving rise to the possibilities of long-range and ultrafast ballistic transport. In this paper, we present the results of numerical simulations of the ultrafast ballistic transport phenomenon in real space and time during and after initialization with a short, spatially localized pulse. Here, we address this problem with two approaches: the standard transfer-matrix method (TMM) for planar structures and a second simulation based on the numerical solution of the Maxwell-Bloch equations that can be used for general configurations (complex metasurfaces, for instance) and excitation modes. The agreement between the TMM and the full numerical calculation with the Maxwell-Bloch equations when applied to multilayer planar configurations provides proof of the validity of both approaches for the present analyses. Overall, we find that the transport of the molecular excitons inside the cavity synchronize with the evolution of the enhanced electromagnetic field inside the cavity. Moreover, the synchronized transport rate is in good agreement with the group velocities predicted from a calculated dispersion relation across a wide range of frequencies. Finally, we relate the group velocity to the Hopfield coefficient obtained from quantum modeling and suggest that the dependence of light-matter coupling on the in-plane wave vector can be an important but overlooked factor for understanding the transport behavior of polaritons. These simulations provide an intuitive tool for understanding the collective motion of light and excitons and helps us to better understand how experimental observations of polaritons should be interpreted.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Drude weights in one-dimensional systems with a single defect

Ballistic transport of a quantum system can be characterized by Drude weight, which quantifies the response of the system to a uniform electric field in the infinitely long timescale. The Drude weight is often discussed in terms of the Kohn formula, which gives the Drude weight by the derivative of the energy eigenvalue of a finite-size system with the periodic boundary condition in terms of the Aharonov-Bohm flux. Recently, the Kohn formula is generalized to nonlinear responses. However, the nonlinear Drude weight determined by the Kohn formula often diverges in the thermodynamic limit. In order to elucidate the issue, in this work we examine a simple example of a one-dimensional tight-binding model in the presence of a single defect at zero temperature. We find that its linear and nonlinear Drude weights given by the Kohn formula (i) depend on the Aharonov-Bohm flux and (ii) diverge proportionally to a power of the system size. Here, we argue that the problem can be attributed to different order of limits. The Drude weight according to the Kohn formula (“Kohn-Drude weight”) indicates the response of a finite-size system to an adiabatic insertion of the Aharonov-Bohm flux. While it is a well-defined physical quantity for a finite-size system, its thermodynamic limit does not always describe the ballistic transport of the bulk. The latter should be rather characterized by a “bulk Drude weight” defined by taking the thermodynamic limit first before the zero-frequency limit. While the potential issue of the order of limits has been sometimes discussed within the linear response, the discrepancy between the two limits is amplified in nonlinear Drude weights. We demonstrate the importance of the low-energy excitations of O(1/L), which are excluded from the Kohn-Drude weight, in regularizing the bulk Drude weight.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Dominant Energy Carrier Transitions and Thermal Anisotropy in Epitaxial Iridium Thin Films

High aspect ratio metal nanostructures are commonly found in a broad range of applications such as electronic compute structures and sensing. The self-heating and elevated temperatures in these structures, however, pose a significant bottleneck to both the reliability and clock frequencies of modern electronic devices. Any notable progress in energy efficiency and speed requires fundamental and tunable thermal transport mechanisms in nanostructured metals. Here, in this work, time-domain thermoreflectance is used to expose cross-plane quasi-ballistic transport in epitaxially grown metallic Ir(001) interposed between Al and MgO(001). Thermal conductivities ranges from roughly 65 (96 in-plane) to 119 (122 in-plane) W m -1 K -1 for 25.5–133.0 nm films, respectively. Further, low defects afforded by epitaxial growth are suspected to allow the observation of electron–phonon coupling effects in sub-20 nm metals with traditionally electron-mediated thermal transport. Via combined electro-thermal measurements and phenomenological modeling, the transition is revealed between three modes of cross-plane heat conduction across different thicknesses and an interplay among them: electron dominant, phonon dominant, and electron–phonon energy conversion dominant. The results substantiate unexplored modes of heat transport in nanostructured metals, the insights of which can be used to develop electro-thermal solutions for a host of modern microelectronic devices and sensing structures.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Nanoscale control of LaAlO 3 /SrTiO 3 conductance beyond the polar catastrophe

Conductive atomic force microscope (c-AFM) lithography can be utilized to create a wide range of LaAlO 3 /SrTiO 3 (LAO/STO)-based nanoelectronic devices in a reconfigurable manner. Experiments were generally performed with intrinsically insulating LAO/STO heterostructures, with LAO thickness less than the critical value at which a polar catastrophe takes place [<4 unit cell (u.c.)]. Here, we use inductively coupled plasma reactive ion etching (ICPRIE) to fabricate c-AFM “canvases” on intrinsically conducting LAO/STO samples with ≥4 u.c. LAO. We observe that its interfacial two-dimensional electron gas (2DEG) can be pinched off and then switched back on by c-AFM lithography. Nanowires created with initially conductive LAO/STO interfaces have an order-of-magnitude longer lifetime in ambient conditions, when compared to an identically created 3.4 u.c. LAO/STO nanowire. We also demonstrate key nanoscale properties such as ballistic transport in a quasi-one-dimensional electron waveguide at a 5 u.c. LAO/STO interface. This approach frees c-AFM-written nanodevice designs from time constraints in air associated with <4 u.c. LAO/STO heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Hofstadter butterfly and quantum transport benchmarks in PVA-exfoliated graphene heterostructures

Polymer exposure during van der Waals heterostructure fabrication is widely regarded as compromising the integrity of the electronic system required for hosting emergent quantum physics. This assumption has persisted largely because electronic benchmarking of heterostructures from polymer-exposed graphene has remained limited to only foundational transport metrics, such as mobility and charge inhomogeneity. Here, we challenge this assumption by establishing that graphene heterostructures produced by polyvinyl alcohol (PVA)-assisted exfoliation and encapsulated in hexagonal boron nitride using elevated-temperature lamination satisfy demanding quantum transport benchmarks. Beyond exhibiting ultra-high mobility and ballistic transport, these heterostructures yield quantum scattering times comparable to the best polymer-free devices. Most demanding of all, moiré superlattices from PVA-exposed graphene exhibit Hofstadter butterfly spectra, confirming spatially uniform interlayer coupling across the device area. These results establish that PVA exposure is compatible with low-disorder electronic systems, relaxing the trade-off between scalable fabrication and low-disorder quantum transport. This study motivates further development of polymer-assisted assembly with engineered residue-removal protocols.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Determining the Electronic Structure and Thermoelectric Properties of MoS 2 /MoSe 2 Type‐I Heterojunction by DFT and the Landauer Approach

Abstract The electronic structure and thermoelectric properties of MoX 2 (X = S, Se) Van der Waals heterojunctions are reported, with the intention of motivating the design of electronic devices using such materials. Calculations indicate the proposed heterojunctions are thermodynamically stable and present a band gap reduction from 1.8 eV to 0.8 eV. The latter effect is highly related to interactions between metallic d‐character orbitals and chalcogen p‐character orbitals. The theoretical approach allows to predict a transition from semiconducting to semi‐metallic behavior. The band alignment indicates a type‐I heterojunction and band offsets of 0.2 eV. Transport properties show clear n‐type nature and a high Seebeck coefficient at 300 K, along with conductivity values (σ/τ) in the order of 10 20 . Lastly, using the Landauer approach and ballistic transport, the proposed heterojunctions can be modeled as a channel material for a typical one‐gate transistor configuration predicting subthreshold values of ≈60 mV dec −1 and field–effect mobilities of ≈160 cm −2 V −1 s −1 .

López‐Galán, Oscar A.↗
DOE OSTI2025

Quantum Anomalies in Condensed Matter

Quantum materials provide a fertile ground in which to test and realize unusual phenomena such as quantum anomalies predicted by quantum field theory. There are three important symmetries that are broken when classical field theory is moved into the quantum regime, the scale anomaly, the axial (chiral) anomaly, and the parity anomaly. Several potential device applications may be realized by the discovery of quantum anomalies in condensed matter, enabled by the new physics they embody, including ultra‐sensitive dark matter detectors, far infrared optical modulators, micro‐bolometric detectors, low‐dissipation ballistic transporters, terahertz‐based qubits, terahertz polarization state controls, passive magnetic field sensors, stable topological superconductors that host Majorana fermions, and qubits topologically protected against decoherence. In this perspective article, the definition of these quantum anomalies is laid out, how little is known in the context of condensed matter, and how quantum anomalies are predicted to manifest as anomalous electronic, thermal, and magnetic behavior in experiments on topological quantum materials, including Weyl and Dirac semimetals. Furthermore, the importance that mechanical strain and defects will play in modifying signatures of quantum anomalies is discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2022

The role of temperature on defect diffusion and nanoscale patterning in graphene

Graphene is of great scientific interest due to a variety of unique properties such as ballistic transport, spin selectivity, the quantum hall effect, and other quantum properties. Nanopatterning and atomic scale modifications of graphene are expected to enable further control over its intrinsic properties, providing ways to tune the electronic properties through geometric and strain effects, introduce edge states and other local or extended topological defects, and sculpt circuit paths. The focused beam of a scanning transmission electron microscope (STEM) can be used to remove atoms, enabling milling, doping, and deposition. Utilization of a STEM as an atomic scale fabrication platform is increasing; however, a detailed understanding of beam-induced processes and the subsequent cascade of aftereffects is lacking. Here, we examine the electron beam effects on atomically clean graphene at a variety of temperatures ranging from 400 to 1000 °C. We find that temperature plays a significant role in the milling rate and moderates competing processes of carbon adatom coalescence, graphene healing, and the diffusion (and recombination) of defects. The results of this work can be applied to a wider range of 2D materials and introduce better understanding of defect evolution in graphite and other bulk layered materials.

36 MATERIALS SCIENCE↗
DOE OSTI2025

On reduced modelling of the modulational dynamics in magnetohydrodynamics

This paper explores structure formation in two-dimensional magnetohydrodynamic (MHD) turbulence as a modulational instability (MI) of turbulent fluctuations. We focus on the early stages of structure formation and consider simple backgrounds that allow for a tractable model of the MI while retaining the full chain of modulational harmonics. This approach allows us to systematically examine the validity of popular closures such as the quasilinear approximation and other low-order truncations. We find that, although such simple closures can provide quantitatively accurate approximations of the MI growth rates in some regimes, they can fail to capture the modulational dynamics in adjacent regimes even qualitatively, falsely predicting MI when the system is actually stable. We find that this discrepancy is due to the excitation of propagating spectral waves (PSWs) which can ballistically transport energy along the modulational spectrum, unimpeded until dissipative scales, thereby breaking the feedback loops that would otherwise sustain MIs. The PSWs can be self-maintained as global modes with real frequencies and drain energy from the primary structure at a constant rate until the primary structure is depleted. To describe these waves within a reduced model, we propose an approximate spectral closure that captures them and MIs on the same footing. We also find that introducing corrections to ideal MHD, conservative or dissipative, can suppress PSWs and reinstate the accuracy of the quasilinear approximation. In this sense, ideal MHD is a ‘singular’ system that is particularly sensitive to the accuracy of the closure within mean-field models.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Metals strengthen with increasing temperature at extreme strain rates

The strength of materials depends on the rate at which they are tested, as defects, for example dislocations, that move in response to applied strains have intrinsic kinetic limitations. As the deformation strain rate increases, more strengthening mechanisms become active and increase the strength. However, the regime in which this transition happens has been difficult to access with traditional micromechanical strength measurements. Here, with microballistic impact testing at strain rates greater than 10 6 s −1 , and without shock conflation, we show that the strength of copper increases by about 30% for a 157 °C increase in temperature, an effect also observed in pure titanium and gold. This effect is counterintuitive, as almost all materials soften when heated under normal conditions. This anomalous thermal strengthening across several pure metals is the result of a change in the controlling deformation mechanism from thermally activated strengthening to ballistic transport of dislocations, which experience drag through phonon interactions. These results point to a pathway to better model and predict materials properties under various extreme strain rate conditions, from high-speed manufacturing operations to hypersonic transport.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Thermal scanning probe and laser lithography for patterning nanowire based quantum devices

Semiconductor nanowire (NW) quantum devices offer a promising path for the pursuit and investigation of topologically-protected quantum states, and superconducting and spin-based qubits that can be controlled using electric fields. Theoretical investigations into the impact of disorder on the attainment of dependable topological states in semiconducting nanowires with large spin–orbit coupling and g-factor highlight the critical need for improvements in both growth processes and nanofabrication techniques. In this work, we used a hybrid lithography tool for both the high-resolution thermal scanning probe lithography and high-throughput direct laser writing of quantum devices based on thin InSb nanowires with contact spacing of 200 nm. Electrical characterization demonstrates quasi-ballistic transport. The methodology outlined in this study has the potential to reduce the impact of disorder caused by fabrication processes in quantum devices based on 1D semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Cryogenic Control Circuitry for Superconducting Qubits

Superconducting qubits have reached the point where system designers are worried about the heat that control wiring brings into the cryostat. To continue scaling cryogenic quantum systems, control solutions that work inside the cold space must be explored. One possibility is to use control electronics that is native to superconductivity, so called single-flux-quantum (SFQ) circuitry, to form an interface between qubits and whatever other electronics is needed to control eventual quantum systems. To begin exploring the utility of SFQ as control circuitry, we performed modeling and experiments on qubit readout using ballistic fluxons which are SFQ in the limit of ballistic fluxon transport. Our modeling results show that a flavor of qubit, the fluxonium, can be read out using ballistic fluxons. We designed test samples to prove some of the key concepts needed for such a readout but were ultimately unable to getting a working demonstration. The lack of testing success was due to challenges in fabrication and running short of time to perform testing rather than a fundamental problem with our analysis.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗