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At least 19 records

Material Needs and Measurement Challenges for Advanced Semiconductor Packaging: Understanding the Soft Side of Science

This Perspective builds upon insights from the National Institute of Standards and Technology (NIST)-organized workshop, “Materials and Metrology Needs for Advanced Semiconductor Packaging Strategies,” held at the 35th annual Electronics Packaging Symposium in Binghamton, NY, on September 5, 2024. It outlines critical challenges and opportunities related to polymer-based “soft” materials in advanced semiconductor packaging, with emphasis on polymer science, measurement science (metrology), and the strategic development of Research-Grade Test Materials (RGTMs). These efforts, led by the NIST CHIPS team, aim to advance the fundamental understanding of structure-property-processing relationships, promote standardized guidelines and innovative methods for material characterization, and accelerate the development, qualification, and adoption of next-generation packaging materials. The Perspective also distills key insights from the panel discussion with industry experts, emphasizing the need for close collaboration among materials scientists, process engineers, and metrology experts to enable a holistic strategy, further highlighting the importance of cross-sector partnerships among industry, academia, and government to address pressing challenges in packaging materials and processes.

97 MATHEMATICS AND COMPUTING

Enabling More than Moore: Accelerated Reliability Testing and Risk Analysis for Advanced Electronics Packaging

For five decades, the semiconductor industry has distinguished itself by the rapid pace of improvement in miniaturization of electronics products-Moore's Law. Now, scaling hits a brick wall, a paradigm shift. The industry roadmaps recognized the scaling limitation and project that packaging technologies will meet further miniaturization needs or ak.a "More than Moore". This paper presents packaging technology trends and accelerated reliability testing methods currently being practiced. Then, it presents industry status on key advanced electronic packages, factors affecting accelerated solder joint reliability of area array packages, and IPC/JEDEC/Mil specifications for characterizations of assemblies under accelerated thermal and mechanical loading. Finally, it presents an examples demonstrating how Accelerated Testing and Analysis have been effectively employed in the development of complex spacecraft thereby reducing risk. Quantitative assessments necessarily involve the mathematics of probability and statistics. In addition, accelerated tests need to be designed which consider the desired risk posture and schedule for particular project. Such assessments relieve risks without imposing additional costs. and constraints that are not value added for a particular mission. Furthermore, in the course of development of complex systems, variances and defects will inevitably present themselves and require a decision concerning their disposition, necessitating quantitative assessments. In summary, this paper presents a comprehensive view point, from technology to systems, including the benefits and impact of accelerated testing in offsetting risk.

Ghaffarian, Reza

The Heterogeneous Integration of Electronic Components

Heterogeneous integration (HI) of electronics components is broadly recognized as a powerful and crucial enabler for the continued growth of computing and communication. From 2010 onwards, the value of HI is increasingly visible in the advanced packaging used in artificial intelligence, high-performance computing, smartphones and communications product implementations. In this Perspective, we argue that HI is crucial to semiconductors and more broadly to the continued evolution of computing and communications. We use leading-edge advanced packaging examples to represent the value, advancements and opportunities for HI. To succeed, it is critical to develop comprehensive HI roadmaps that inform collaborations across the design, manufacturing and reliability spectrum between systems architects, packaging and semiconductor technologists to common goals. Although this article does not provide a full roadmap, we instead detail additional parameters for artificial intelligence, smartphone and other cellular communication devices, and their constituent building blocks including interconnects, power electronics, photonics, thermal management, reliability, modelling and co-design, to foster greater collaboration opportunities among academia, research laboratories and industry.

42 ENGINEERING

Integrated Arrays on Silicon at Terahertz Frequencies

In this paper we explore various receiver font-end and antenna architecture for use in integrated arrays at terahertz frequencies. Development of wafer-level integrated terahertz receiver front-end by using advanced semiconductor fabrication technologies and use of novel integrated antennas with silicon micromachining are reported. We report novel stacking of micromachined silicon wafers which allows for the 3-dimensional integration of various terahertz receiver components in extremely small packages which easily leads to the development of 2- dimensioanl multi-pixel receiver front-ends in the terahertz frequency range. We also report an integrated micro-lens antenna that goes with the silicon micro-machined front-end. The micro-lens antenna is fed by a waveguide that excites a silicon lens antenna through a leaky-wave or electromagnetic band gap (EBG) resonant cavity. We utilized advanced semiconductor nanofabrication techniques to design, fabricate, and demonstrate a super-compact, low-mass submillimeter-wave heterodyne frontend. When the micro-lens antenna is integrated with the receiver front-end we will be able to assemble integrated heterodyne array receivers for various applications such as multi-pixel high resolution spectrometer and imaging radar at terahertz frequencies.

silicon micromaching

Electronics for Low-Temperature Space Operation Being Evaluated

Electronic components and systems capable of low-temperature operation are needed for many future NASA missions where it is desirable to have smaller, lighter, and cheaper (unheated) spacecraft. These missions include Mars (-20 to -120 C) orbiters, landers, and rovers; Europa (-150 C) oceanic exploratory probes and instrumentation; Saturn (-183 C) and Pluto (-229 C) interplanetary probes. At the present, most electronic equipment can operate down to only -55 C. It would be very desirable to have electronic components that expand the operating temperature range down to -233 C. The successful development of these low-temperature components will eventually allow space probes and onboard electronics to operate in very cold environments (out as far as the planet Pluto). As a result, radioisotope heating units, which are used presently to keep space electronics near room temperature, will be reduced in number or eliminated. The new cold electronics will make spacecraft design and operation simpler, more flexible, more reliable, lighter, and cheaper. Researchers at the NASA Glenn Research Center are evaluating potential commercial off-the- shelf devices and are developing new electronic components that will tolerate operation at low temperatures down to -233 C. This work is being carried out mainly inhouse and also through university grants and commercial contracts. The components include analog-to-digital converters, semiconductor switches, capacitors, dielectric and packaging material, and batteries. For example, the effect of low temperature on the capacitance of three different types of capacitors is shown in the graph. Using these advanced components, system products will be developed, including dc/dc converters, battery charge/discharge management systems, digital control electronics, transducers, and sensor instrumentation.

Patterson, Richard L.

Terahertz Array Receivers with Integrated Antennas

Highly sensitive terahertz heterodyne receivers have been mostly single-pixel. However, now there is a real need of multi-pixel array receivers at these frequencies driven by the science and instrument requirements. In this paper we explore various receiver font-end and antenna architectures for use in multi-pixel integrated arrays at terahertz frequencies. Development of wafer-level integrated terahertz receiver front-end by using advanced semiconductor fabrication technologies has progressed very well over the past few years. Novel stacking of micro-machined silicon wafers which allows for the 3-dimensional integration of various terahertz receiver components in extremely small packages has made it possible to design multi-pixel heterodyne arrays. One of the critical technologies to achieve fully integrated system is the antenna arrays compatible with the receiver array architecture. In this paper we explore different receiver and antenna architectures for multi-pixel heterodyne and direct detector arrays for various applications such as multi-pixel high resolution spectrometer and imaging radar at terahertz frequencies.

direct detector arrays

Advanced Packaging Technology Used in Fabricating a High-Temperature Silicon Carbide Pressure Sensor

The development of new aircraft engines requires the measurement of pressures in hot areas such as the combustor and the final stages of the compressor. The needs of the aircraft engine industry are not fully met by commercially available high-temperature pressure sensors, which are fabricated using silicon. Kulite Semiconductor Products and the NASA Glenn Research Center have been working together to develop silicon carbide (SiC) pressure sensors for use at high temperatures. At temperatures above 850 F, silicon begins to lose its nearly ideal elastic properties, so the output of a silicon pressure sensor will drift. SiC, however, maintains its nearly ideal mechanical properties to extremely high temperatures. Given a suitable sensor material, a key to the development of a practical high-temperature pressure sensor is the package. A SiC pressure sensor capable of operating at 930 F was fabricated using a newly developed package. The durability of this sensor was demonstrated in an on-engine test. The SiC pressure sensor uses a SiC diaphragm, which is fabricated using deep reactive ion etching. SiC strain gauges on the surface of the diaphragm sense the pressure difference across the diaphragm. Conventionally, the SiC chip is mounted to the package with the strain gauges outward, which exposes the sensitive metal contacts on the chip to the hostile measurement environment. In the new Kulite leadless package, the SiC chip is flipped over so that the metal contacts are protected from oxidation by a hermetic seal around the perimeter of the chip. In the leadless package, a conductive glass provides the electrical connection between the pins of the package and the chip, which eliminates the fragile gold wires used previously. The durability of the leadless SiC pressure sensor was demonstrated when two 930 F sensors were tested in the combustor of a Pratt & Whitney PW4000 series engine. Since the gas temperatures in these locations reach 1200 to 1300 F, the sensors were installed in water-cooled jackets, as shown. This was a severe test because the pressure-sensing chips were exposed to the hot combustion gases. Prior to the installation of the SiC pressure sensors, two high-temperature silicon sensors, installed in the same locations, did not survive a single engine run. The durability of the leadless SiC pressure sensor was demonstrated when both SiC sensors operated properly throughout the two runs that were conducted.

Beheim, Glenn M.

Power components for the space station 20-kHz power distribution system

Since 1984, NASA Lewis Research Center was developing high power, high frequency space power components as part of The Space Station Advanced Development program. The purpose of The Advanced Development program was to accelerate existing component programs to ensure their availability for use on the Space Station. These components include a rotary power transfer device, remote power controllers, remote bus isolators, high power semiconductor, a high power semiconductor package, high frequency-high power cable, high frequency-high power connectors, and high frequency-high power transformers. All the components were developed to the prototype level and will be installed in the Lewis Research Center Space Station power system test bed.

Renz, David D.

Power components for the Space Station 20-kHz power distribution system

Since 1984, NASA Lewis Research Center was developing high power, high frequency space power components as part of The Space Station Advanced Development program. The purpose of the Advanced Development program was to accelerate existing component programs to ensure their availability for use on the Space Station. These components include a rotary power transfer device, remote power controllers, remote bus isolators, high power semiconductor, a high power semiconductor package, high frequency-high power cable, high frequency-high power connectors, and high frequency-high power transformers. All the components were developed to the prototype level and will be installed in the Lewis Research Center Space Station power system test bed.

Renz, David D.

Advanced Power Electronics and Electric Machines

NLR's advanced power electronics and electric machines (APEEM) research group develops world-class experimental and modeling capabilities to design and evaluate efficient and reliable power electronics and electric machines, as well as innovative thermal management systems to maximize their performance. They also design, fabricate, and characterize advanced power electronics packaging and are developing state-of-health monitoring techniques.

25 ENERGY STORAGE

Nano-Satellite Avionics

Abstract NASA's Goddard Space Flight Center (GSFC) is currently developing a new class of satellites called the nano-satellite (nano-sat). A major objective of this development effort is to provide the technology required to enable a constellation of tens to hundreds of nano-satellites to make both remote and in-situ measurements from space. The Nano-sat will be a spacecraft weighing a maximum of 10 kg, including the propellant mass, and producing at least 5 Watts of power to operate the spacecraft. The electronics are required to survive a total radiation dose rate of 100 krads for a mission lifetime of two years. There are many unique challenges that must be met in order to develop the avionics for such a spacecraft. The first challenge is to develop an architecture that will operate on the allotted 5 Watts and meet the diverging requirements of multiple missions. This architecture will need to incorporate a multitude of new advanced microelectronic technologies. The microelectronics developed must be a modular and scalable packaging of technology to solve the problem of developing a solution to both reduce cost and meet the requirements of various missions. This development will utilize the most cost effective approach, whether infusing commercially driven semiconductor devices into spacecraft applications or partnering with industry to design and develop low cost, low power, low mass, and high capacity data processing devices. This paper will discuss the nano-sat architecture and the major technologies that will be developed. The major technologies that will be covered include: (1) Light weight Low Power Electronics Packaging, (2) Radiation Hard/Tolerant, Low Power Processing Platforms, (3) High capacity Low Power Memory Systems (4) Radiation Hard reconfiguragble field programmable gate array (rFPGA)

Culver, Harry

New Roadmap for Microelectronics: Charting the Semiconductor Industry's Path Over the Next 5, 10, and 20 Years

In the past, the role of strategic planning for semiconductor industry was met by the International Technology Roadmap for Semiconductors (ITRS), serving as a guiding light that provided manufacturers, designers, equipment suppliers, and researchers with direction years in advance. By providing a common framework for coordination across semiconductor industry stakeholders, technology development efforts were efficient and aligned. However, the dissolution of the ITRS in 2015 left a void, leading to years of disjointed efforts. Recognizing the need for unified guidance, the industry rallied for the creation of a new strategic plan, the Microelectronics and Advanced Packaging Technologies (MAPT) Roadmap (2023) was developed, through the efforts of hundreds of industry, academic and government experts, to provide detailed strategies for achieving these goals. This comprehensive plan outlines ambitious goals for the industry's future.

HPC, Roadmap, AI, Liquid Cooling, Power, Silicon,

Advanced CMOS Radiation Effects Testing and Analysis

Presentation at the annual NASA Electronic Parts and Packaging (NEPP) Program Electronic Technology Workshop (ETW). The material includes an update of progress in this NEPP task area over the past year, which includes testing, evaluation, and analysis of radiation effects data on the IBM 32 nm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) process. The testing was conducted using test vehicles supplied by directly by IBM.

cmos

Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions

Benefiting from the superior properties of wide-bandgap semiconductor materials, wide-bandgap power devices demonstrate exceptional switching performance, enabling more efficient and compact power electronics systems. However, ultrafast switching poses challenges to the reliability of the system in terms of severe oscillations and voltage overshoot, electromagnetic interference, and increased risk of partial discharge. By developing advanced power module packaging for fast-switching power devices, the above-mentioned challenges can be mitigated at the packaging level, enabling the full utilization of the fast-switching capability of wide-bandgap devices. Meanwhile, such technology also lays the groundwork for packaging next-generation power devices with even higher blocking voltage and faster switching speed. In this paper, a comprehensive review of ultrafast switching power modules has been made, including the benefits and status of ultrafast switching power modules, challenges brought by ultrafast switching, and promising technologies to address these challenges. In addition, future development trends and research gaps are also discussed in this paper. Furthermore, this review can serve as a reference for future wide-bandgap power module packaging design.

24 POWER TRANSMISSION AND DISTRIBUTION

Low Cost High-Performance HRE-Free 3-in-1 Electric Drive Unit

The project team completed work to expand upon American Axle & Manufacturing’s (AAM) baseline technology and develop a high-speed, AC induction electric drive unit (EDU) with total direct-oil-cooling and integrated power electronics. The project accelerated advancements in EDU technology by allowing AAM to build upon the progress made in developing the underlying baseline technologies. The following seven improvements to AAM’s baseline technology were implemented in this research and development program: 1) Increased speed (30k RPM) AC induction motor, 2) Silver-sintering of discrete silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFET) to heat sinks, 3) Electrically insulated rotor bars, 4) Optimized lamination steel, 5) EDU-integrated 650VDC inverter package, 6) Over-molded stator with molded liners, and 7) 650VDC power-dense stator design. The successful development of the technology resulted in a meaningful cost reduction for EDU systems in the market. Coupled with falling battery system costs, lower EDU costs will likely accelerate the market acceptance and related production scaling of battery electric vehicles. The objective of this project was to research, develop, and test a Heavy Rare Earth (HRE)-free 3-In-1 electric drive unit (EDU) that has class leading power density and cost. The key technologies to be developed were anticipated to meet or exceed the Department of Energy (DOE) targets of a cost ≤ $\$$7/kilowatt (kW), power density ≥ 12 kW/liter, and operating voltage ≥ 600 VDC.

33 ADVANCED PROPULSION SYSTEMS

Integration Methods for High-Density Integrated Electric Drives (Final Technical Report)

The project goal was to research, design and fabricate high-power-density, high-performance SiC power electronic modules for motor drive inverters in electric vehicles (EVs) to enable the subsequent motor drive to achieve a power density of 100 kW/l. EVs use electric motors instead of internal combustion engines as the prime mover, and their core components are semiconductor-based power electronic modules. Efficient power electronic modules play a vital role in power conversion systems. The performance of power modules directly affects the energy efficiency and overall performance of electric vehicles. Therefore, it is particularly important to develop power modules with high power density and high electrical performance that will perform reliably under EV environmental conditions. To achieve these goals, advanced electronic packaging technologies are required. This report describes a 5-year effort to integrate key aspects surrounding the basic power devices into the module itself to increase power density. These include sensing and sensing readout circuits, gate driver circuits, and two-sided cooling solutions.

33 ADVANCED PROPULSION SYSTEMS

Spinoff 2010

Topics covered include: Burnishing Techniques Strengthen Hip Implants; Signal Processing Methods Monitor Cranial Pressure; Ultraviolet-Blocking Lenses Protect, Enhance Vision; Hyperspectral Systems Increase Imaging Capabilities; Programs Model the Future of Air Traffic Management; Tail Rotor Airfoils Stabilize Helicopters, Reduce Noise; Personal Aircraft Point to the Future of Transportation; Ducted Fan Designs Lead to Potential New Vehicles; Winglets Save Billions of Dollars in Fuel Costs; Sensor Systems Collect Critical Aerodynamics Data; Coatings Extend Life of Engines and Infrastructure; Radiometers Optimize Local Weather Prediction; Energy-Efficient Systems Eliminate Icing Danger for UAVs; Rocket-Powered Parachutes Rescue Entire Planes; Technologies Advance UAVs for Science, Military; Inflatable Antennas Support Emergency Communication; Smart Sensors Assess Structural Health; Hand-Held Devices Detect Explosives and Chemical Agents; Terahertz Tools Advance Imaging for Security, Industry; LED Systems Target Plant Growth; Aerogels Insulate Against Extreme Temperatures; Image Sensors Enhance Camera Technologies; Lightweight Material Patches Allow for Quick Repairs; Nanomaterials Transform Hairstyling Tools; Do-It-Yourself Additives Recharge Auto Air Conditioning; Systems Analyze Water Quality in Real Time; Compact Radiometers Expand Climate Knowledge; Energy Servers Deliver Clean, Affordable Power; Solutions Remediate Contaminated Groundwater; Bacteria Provide Cleanup of Oil Spills, Wastewater; Reflective Coatings Protect People and Animals; Innovative Techniques Simplify Vibration Analysis; Modeling Tools Predict Flow in Fluid Dynamics; Verification Tools Secure Online Shopping, Banking; Toolsets Maintain Health of Complex Systems; Framework Resources Multiply Computing Power; Tools Automate Spacecraft Testing, Operation; GPS Software Packages Deliver Positioning Solutions; Solid-State Recorders Enhance Scientific Data Collection; Computer Models Simulate Fine Particle Dispersion; Composite Sandwich Technologies Lighten Components; Cameras Reveal Elements in the Short Wave Infrared; Deformable Mirrors Correct Optical Distortions; Stitching Techniques Advance Optics Manufacturing; Compact, Robust Chips Integrate Optical Functions; Fuel Cell Stations Automate Processes, Catalyst Testing; Onboard Systems Record Unique Videos of Space Missions; Space Research Results Purify Semiconductor Materials; and Toolkits Control Motion of Complex Robotics.

Source record

Operational Testing of 4H-SiC JFET ICs for 60 Days Directly Exposed to Venus Surface Atmospheric Conditions

Prolonged Venus surface missions (lasting months instead of hours) have proven infeasible to date in the absence of a complete suite of electronics able to function for such durations without protection from the planet’s extreme conditions of ~460 °C, ~9.3 MPa (~ 92 Earth atmospheres) chemically reactive environment. Here we report testing data from a successful two-month (60-day) operational demonstration of two 175-transistor 4H-SiC junction field effect transistor (JFET) semiconductor integrated circuits (ICs) directly exposed (no cooling and no protective chip packaging) to a high-fidelity physical and chemical reproduction of Venus surface atmospheric conditions in a test chamber. These results extend the longest reported duration of electronics operation in Venus surface atmospheric conditions almost 3-fold and were accomplished using prototype SiC JFET chips of more than 7-fold increased complexity. The demonstrated advancement marks a significant step towards realization of electronics with sufficient complexity and durability for implementing robotic landers capable of returning months of scientific data from the surface of Venus.

Integrated Circuit