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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2020

Joint retrieval of soil moisture and permafrost active layer thickness using L-band InSAR and P-band PolSAR

Seasonal subsidence measured by repeat-pass interferometric synthetic aperture radar (InSAR) can be used to infer the active layer thickness (ALT) in permafrost regions. The differential volume of soil water undergoing the phase change over the thaw season is one of the factors impacting the seasonal subsidence and is a function of both soil moisture profile and thaw depth. Without the information about soil moisture, this InSAR approach can have large biases in the ALT estimates when soil moisture profile is below saturation. Soil moisture and ALT can also be estimated from polarimetric synthetic aperture radar (PolSAR) backscatter observations but the sensing depth of the PolSAR approach is limited when deep ALT is present. In this paper, we integrated these two approaches and applied a joint retrieval method to estimate the soil moisture profiles and ALT from the L-band InSAR and P-band PolSAR data acquired over the Arctic-boreal region during the 2017 Arctic-Boreal Vulnerability Experiment (ABoVE) airborne campaign.

Schaefer, Kevin M.↗
NASA NTRS2019

Developing a soil inversion model framework for regional permafrost monitoring

Currently, the community lacks capabilities to assess and monitor landscape scale permafrost active layer dynamics over large extents. To address this need, we developed a concept of a remote sensing based Soil Inversion Model for regional Permafrost (SIM-P) monitoring. The current SIM-P framework includes a satellite-based soil process model and a soil dielectric model. We are also working on incorporating a radar scattering model for Arctic tundra into the SIM-P framework. A unified soil parameterization scheme was developed to harmonize key soil thermal, hydraulic and dielectric parameters in the soil process and radar models that can be used in the joint soil-radar inversion framework. The soil parameter retrievals of the SIM-P framework include soil organic content (SOC) and active layer thickness (ALT). Initial tests of SIM-P using in-situ soil permittivity observations showed reasonable accuracy in predicting site-level SOC and soil temperature profiles at an Alaska tundra site and ALT in Arctic Alaska. SIM-P will be further tested using airborne P- and L-band radar data collected during NASA’s Arctic Boreal Vulnerability Experiment (ABoVE) to evaluate the sensitivity of longwave radar to active layer properties.

Miller, Charles E.↗
NASA NTRS1982

Effective refractive index and first-order-mode cutoff conditions in InGaAsP/InP DH laser structures /lambda = 1.2-1.6 microns/

A highly accurate analytical expression for the effective refractive index in In GaAsP/InP DH lasers emitting in the 1.2-1.6 micron range is presented. This closed-form expression is used to derive simple wavelength-independent expressions for the first-order mode cutoff conditions of various lateral waveguides. The effective refractive index is a function of emission wavelength and active layer thickness, and the mode cutoff conditions are compared to experimental data from mode-stabilized 1.3 and 1.55 micron DH lasers.

Botez, D.↗
NASA NTRS1989

Blocked impurity band hybrid infrared focal plane arrays for astronomy

High-performance infrared hybrid focal plane arrays using 10- x 50-element Si:As blocked-impurity-band (BIB) detectors (cutoff wavelength = 28 microns) and matching switched MOSFET multiplexers have been developed and characterized for space astronomy. Use of impurity-band-conduction technology provides detectors which are nuclear-radiation-hard and free of the many anomalies associated with conventional silicon photoconductive detectors. Emphasis in the present work is on recent advances in detector material quality which have led to significantly improved detector and hybrid characteristics. Results demonstrating increased quantum efficiency (particularly at short-wavelength infrared), obtained by varying the BIB detector properties (infrared active layer thickness and arsenic doping profile), are summarized. Measured read noise and dark current for different temperatures are reported. The hybrid array performance achieved demonstrates that BIB detectors are well suited for use in astronomical instrumentation.

Reynolds, D. B.↗
NASA NTRS2005

A Regional, Integrated Monitoring System for the Hydrology of the Pan-Arctic Land Mass

Work under this NASA contract developed a system for monitoring and historical analysis of the major components of the pan-Arctic terrestrial water cycle. It is known as Arctic-RIMS (Regional Integrated Hydrological Monitoring System for the Pan-Arctic Landmass). The system uses products from EOS-era satellites, numerical weather prediction models, station records and other data sets in conjunction with an atmosphere-land surface water budgeting scheme. The intent was to compile operational (at 1-2 month time lags) gridded fields of precipitation (P), evapotranspiration (ET), P-ET, soil moisture, soil freeze/thaw state, active layer thickness, snow extent and its water equivalent, soil water storage, runoff and simulated discharge along with estimates of non-closure in the water budget. Using "baseline" water budgeting schemes in conjunction with atmospheric reanalyses and pre-EOS satellite data, water budget fields were conjunction with atmospheric reanalyses and pre-EOS satellite data, water budget fields were compiled to provide historical time series. The goals as outlined in the original proposal can be summarized as follows: 1) Use EOS data to compile hydrologic products for the pan-Arctic terrestrial regions including snowcover/snow water equivalent (SSM/A MODIS, AMSR) and near-surface freeze/thaw dynamics (Sea Winds on QuikSCAT and ADEOS I4 SSMI and AMSR). 2) Implement Arctic-RIMS to use EOS data streams, allied fields and hydrologic models to produce allied outputs that fully characterize pan-Arctic terrestrial and aerological water budgets. 3) Compile hydrologically-based historical products providing a long-term baseline of spatial and temporal variability in the water cycle.

Serreze, Mark↗
NASA NTRS1993

Characterization of Si (sub X)Ge (sub 1-x)/Si Heterostructures for Device Applications Using Spectroscopic Ellipsometry

Spectroscopic ellipsometry (SE) characterization of several complex Si (sub X)Ge (sub 1-x)/Si heterostructures prepared for device fabrication, including structures for heterojunction bipolar transistors (HBT), p-type and n-type heterostructure modulation doped field effect transistors, has been performed. We have shown that SE can simultaneously determine all active layer thicknesses, Si (sub X)Ge (sub 1-x) compositions, and the oxide overlayer thickness, with only a general knowledge of the structure topology needed a priori. The characterization of HBT material included the SE analysis of a Si (sub X)Ge (sub 1-x) layer deeply buried (600 nanometers) under the silicon emitter and cap layers. In the SE analysis of n-type heterostructures, we examined for the first time a silicon layer under tensile strain. We found that an excellent fit can be obtained using optical constants of unstrained silicon to represent the strained silicon conduction layer. We also used SE to measure lateral sample homogeneity, providing quantitative identification of the inhomogeneous layer. Surface overlayers resulting from prior sample processing were also detected and measured quantitatively. These results should allow SE to be used extensively as a non-destructive means of characterizing Si (sub X)Ge (sub 1-x)/Si heterostructures prior to device fabrication and testing.

Sieg, R. M.↗
NASA NTRS1989

Improved Si:As BIBIB (Back-Illuminated Blocked-Impurity-Band) hybrid arrays

Results of a program to increase the short wavelength (less than 10 microns) detective quantum efficiency, eta/beta, of Si:As Impurity Band Conduction arrays are presented. The arrays are epitaxially grown Back-Illuminated Blocked (BIB) Impurity-Band (BIBIB) 10x50 detectors bonded to switched-FET multiplexers. It is shown that the 4.7 microns detective quantum efficiency increases proportionately with the thickness of the infrared active layer. A BIB array with a thick active layer, designed for low dark current, exhibits eta/beta = 7 to 9 percent at 4.7 microns for applied bias voltages between 3 and 5 V. The product of quantum efficiency and photoelectric gain, etaG, increases from 0.3 to 2.5 as the voltage increases from 3 to 5 V. Over this voltage range, the dark current increases from 8 to 120 e(-)s(-1) at a device temperature of 4.2 K and is under 70 e(-)s(-1) for all voltages at 2 K. Because of device gain, the effective dark current (equivalent photon rate) is less than 3 e(-)s(-1) under all operating conditions. The effective read noise (equivalent photon noise) is found to be less than 12 electrons under all operating conditions and for integration times between 0.05 and 100 seconds.

Herter, T.↗
NASA NTRS1988

New MBE buffer for micron- and quarter-micron-gateGaAs MESFETs

A new buffer layer has been developed that eliminates backgating in GaAs MESFETs and substantially reduces short-channel effects in GaAs MESFETs with 0.27-micron-long gates. The new buffer is grown by molecular beam epitaxy (MBE) at a substrate temperature of 200 C using Ga and As sub 4 beam fluxes. The buffer is crystalline, highly resistive, optically inactive, and can be overgrown with high quality GaAs. GaAs MESFETs with a gate length of 0.27 microns that incorporate the new buffer show improved dc and RF properties in comparison with a similar MESFET with a thin undoped GaAs buffer. To demonstrate the backgating performance improvement afforded by the new buffer, MESFETs were fabricated using a number of different buffer layers and structures. A schematic cross section of the MESFET structure used in this study is shown. The measured gate length, gate width, and source-drain spacing of this device are 2,98, and 5.5 microns, respectively. An ohmic contact, isolated from the MESFET by mesa etching, served as the sidegate. The MESFETs were fabricated in MBE n-GaAs layers grown on the new buffer and also in MBE n-GaAs layers grown on buffer layers of undoped GaAs, AlGaAs, and GaAs/AlGaAs superlattices. All the buffer layers were grown by MBE and are 2 microns thick. The active layer is doped to approximately 2 x 10 to the 17th/cu cm with silicon and is 0.3 microns thick.

Source record↗
NASA NTRS1988

Lateral optical confinement of channeled-substrate-planar lasers with GaAs/AlGaAs substrates

A physical explanation of the lateral guiding mechanism in channeled-substrate-planar (CSP) lasers based on the amount of wavefront tilt of the transverse field outside the channel region is presented. Because of this inherent wavefront tilt, all CSP lasers will have a very slight asymmetry in their transverse far-field pattern. The nature of the guiding mechanism does not require light absorption by the substrate. Design curves showing the complex lateral effective index step as a function of n-clad thickness with the active layer as a parameter are also presented. Depending on the specific layer compositions and thicknesses, the CSP guiding mechanism can provide a positive lateral index step for substrates with mole fractions of AlAs ranging from 0 to higher than 0.2.

Evans, Gary A.↗
NASA NTRS2022

Semispan Test Results of a Conventional High-Lift Common Research Model in Landing Configuration

A 10%-scale high-lift version of the Common Research Model (CRM-HL) was tested in the 14- by 22-Foot Subsonic Tunnel at the NASA Langley Research Center. This research was aimed at providing a representative reference case for comparison with an Active Flow Control (AFC) enabled version of the CRM-HL and to increase the existing experimental database for CFD high-lift prediction. The test was conducted mostly at a freestream Mach number of 0.20. The effects of the engine nacelle, nacelle chine, tufts, small variations in Mach number, hysteresis-associated increasing/decreasing angle of attack, and incoming floor boundary-layer thickness (i.e., thinning by activation of the floor boundary layer removal system) were examined. A prestall lift performance degradation for the CRM-HL configuration was resolved with a properly placed nacelle chine. Surface pressure results are presented in detail for three key variants of CRM-HL — baseline (nacelle on), nacelle off, and nacelle with the most effective chine installation. The presented aerodynamic forces and surface pressures include both with and without the wall correction using the Transonic Wall Interference Correction System (TWICS) method. A limited set of photogrammetry results is also presented to document the model deformation under test conditions.

high-lift↗
NASA NTRS1996

Computational analysis of semi-span model test techniques

A computational investigation was conducted to support the development of a semi-span model test capability in the NASA LaRC's National Transonic Facility. This capability is required for the testing of high-lift systems at flight Reynolds numbers. A three-dimensional Navier-Stokes solver was used to compute the low-speed flow over both a full-span configuration and a semi-span configuration. The computational results were found to be in good agreement with the experimental data. The computational results indicate that the stand-off height has a strong influence on the flow over a semi-span model. The semi-span model adequately replicates the aerodynamic characteristics of the full-span configuration when a small stand-off height, approximately twice the tunnel empty sidewall boundary layer displacement thickness, is used. Several active sidewall boundary layer control techniques were examined including: upstream blowing, local jet blowing, and sidewall suction. Both upstream tangential blowing, and sidewall suction were found to minimize the separation of the sidewall boundary layer ahead of the semi-span model. The required mass flow rates are found to be practicable for testing in the NTF. For the configuration examined, the active sidewall boundary layer control techniques were found to be necessary only near the maximum lift conditions.

Milholen, William E., II↗
NASA NTRS2003

A Comparison of Active and Passive Methods for Control of Hypersonic Boundary Layers on Airbreathing Configurations

Active and passive methods for control of hypersonic boundary layers have been experimentally examined in NASA Langley Research Center wind tunnels on a Hyper-X model. Several configurations for forcing transition using passive discrete roughness elements and active mass addition, or blowing, methods were compared in two hypersonic facilities, the 20-Inch Mach 6 Air and the 31-Inch Mach 10 Air tunnels. Heat transfer distributions, obtained via phosphor thermography, shock system details, and surface streamline patterns were measured on a 0.333-scale model of the Hyper-X forebody. The comparisons between the active and passive methods for boundary layer control were conducted at test conditions that nearly match the nominal Mach 7 flight trajectory of an angle-of-attack of 2-deg and length Reynolds number of 5.6 million. For the passive roughness examination, the primary parametric variation was a range of trip heights within the calculated boundary layer thickness for several trip concepts. The prior passive roughness study resulted in a swept ramp configuration being selected for the Mach 7 flight vehicle that was scaled to be roughly 0.6 of the calculated boundary layer thickness. For the active jet blowing study, the blowing manifold pressure was systematically varied for each configuration, while monitoring the mass flow, to determine the jet penetration height with schlieren and transition movement with the phosphor system for comparison to the passive results. All the blowing concepts tested were adequate for providing transition onset near the trip location with manifold stagnation pressures on the order of 40 times the model static pressure or higher.

Berry, Scott A.↗
NASA NTRS1992

Molecular beam epitaxy engineered III-V semiconductor structures for low-power optically addressed spatial light modulators

Device approaches are investigated for optically addressed SLMs based on molecular-beam epitaxy (MBE) engineered III-V materials and structures. Strong photooptic effects can be achieved in periodically delta-doped multiple-quantum-well structures, but are still insufficient for high-contrast modulation with only single- or double-pass absorption through active layers of practical thickness. The asymmetric Fabry-Perot cavity approach is employed to permit extinction of light due to interference of light reflected from the front and back surfaces of the cavity. This approach is realized with an all-MBE-grown structure consisting of GaAs/AlAs quarter-wave stack reflector grown over the GaAs substrate as the high reflectance mirror and the GaAs surface as the low reflectance mirror. High-contrast modulation is achieved using a low-power InGaAs/GaAs quantum well laser for the control signal.

Larsson, Anders G.↗
NASA NTRS1985

High-Output Injection Laser

Terraced double-heterojunction large optical cavity laser features high output in single optical mode. Semiconductor laser consists of body of single-crystal semiconductor material, typically composed of Group III to V compounds in form of rectangular parallelepiped. One of laser end faces partially transparent so that light may be emitted from it. Lateral thickness variation of active and guide layers in semiconductor laser produces confinement of propagating laser beam in lateral direction.

Connolly, J. C.↗
NASA NTRS2007

GaAs Photovoltaics on Polycrystalline Ge Substrates

High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect.

Wilt, David M.↗