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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2003

Application of Satellite SAR Imagery in Mapping the Active Layer of Arctic Permafrost

A method of mapping the active layer of Arctic permafrost using a combination of conventional synthetic aperture radar (SAR) backscatter and more sophisticated interferometric SAR (INSAR) techniques is proposed. The proposed research is based on the sensitivity of radar backscatter to the freeze and thaw status of the surface soil, and the sensitivity of INSAR techniques to centimeter- to sub-centimeter-level surface differential deformation. The former capability of SAR is investigated for deriving the timing and duration of the thaw period for surface soil of the active layer over permafrost. The latter is investigated for the feasibility of quantitative measurement of frost heaving and thaw settlement of the active layer during the freezing and thawing processes. The resulting knowledge contributes to remote sensing mapping of the active layer dynamics and Arctic land surface hydrology.

Li, Shu-Sun↗
NASA NTRS1987

Active layer model for wall-bounded turbulence

The active-layer model for wall-bounded turbulence hypothesizes that the nonlinear terms are large only in a thin layer near the wall, and hence the turbulence in the region outside the active inner layer can be modeled as a linear fluctuating flow driven by the active layer. This hypothesis is tested using data obtained from a direct simulation of turbulent channel flow. It is found that the nonlinear effects are the strongest near the wall with a maximum at around y sup + = 20 and, outside the near-wall region, these involve primarily the cascading mechanism leading to dissipation.

Landahl, M. T.↗
NASA NTRS2003

Application of Satellite SAR Imagery in Mapping the Active Layer of Arctic Permafrost

The objective of this project is to map the spatial variation of the active layer over the arctic permafrost in terms of two parameters: (i) timing and duration of thaw period and (ii) differential frost heave and thaw settlement of the active layer. To achieve this goal, remote sensing, numerical modeling, and related field measurements are required. Tasks for the University of Colorado team are to: (i) determine the timing of snow disappearance in spring through changes in surface albedo (ii) simulate the freezing and thawing processes of the active layer and (iii) simulate the impact of snow cover on permafrost presence.

Zhang, Ting-Jun↗
NASA NTRS1987

Intrusions in the active layer of channeled-substrate-planar laser diodes

Channeled-substrate-planar laser diodes from various wafers were observed to develop a node or dark spot in their near-field patterns after failure during lifetesting. 'Node' devices from each wafer were angle-lapped and stained in an attempt to uncover a physical mechanism for this common failure symptom. Optical microscopic examination of the beveled cross sections revealed that an intrusion, in the form of a spike at the tip of the zinc diffusion front, had penetrated into the active layer of these diodes. The node observed in the near-field pattern appears to be in a position correspondig to the location of the spike in the active region. In addition, cathodoluminescence measurements on other 'node' diodes revealed a dark line region approximately 2-micron-wide running parallel to and in the middle of the 5-micron contact stripe. It is believed that this dark line region is representative of an area of nonradiative recombination which occurs in the portion of the active layer containing the intrusion.

Slavin, S. E.↗
NASA NTRS2003

Characterization of cathode keeper wear by surface layer activation

In this study, the erosion rates of the discharge cathode keeper in a 30 cm NSTAR configuration ion thruster were measured using a technique known as Surface Layer Activation (SLA). This diagnostic technique involves producing a radioactive tracer in a given surface by bombardment with high energy ions. The decrease in activity of the tracer material may be monitored as the surface is subjected to wear processes and correlated to a depth calibration curve, yielding the eroded depth. Analysis of the activities was achieved through a gamma spectroscopy system. The primary objectives of this investigation were to reproduce erosion data observed in previous wear studies in order to validate the technique, and to determine the effect of different engine operating parameters on erosion rate. The erosion profile at the TH 15 (23 kw) setting observed during the 8200 hour Life Demonstration Test (LDT) was reproduced. The maximum keeper erosion rate at this setting was determined to be 0.085 pm/hr. Testing at the TH 8 (1.4 kw) setting demonstrated lower erosion rates than TH 15, along with a different wear profile. Varying the keeper voltage was shown to have a significant effect on the erosion, with a positive bias with respect to cathode potential decreasing the erosion rate significantly. Accurate measurements were achieved after operating times of only 40 to 70 hours, a significant improvement over other erosion diagnostic methods.

surface layer activation↗
NASA NTRS2020

Joint retrieval of soil moisture and permafrost active layer thickness using L-band InSAR and P-band PolSAR

Seasonal subsidence measured by repeat-pass interferometric synthetic aperture radar (InSAR) can be used to infer the active layer thickness (ALT) in permafrost regions. The differential volume of soil water undergoing the phase change over the thaw season is one of the factors impacting the seasonal subsidence and is a function of both soil moisture profile and thaw depth. Without the information about soil moisture, this InSAR approach can have large biases in the ALT estimates when soil moisture profile is below saturation. Soil moisture and ALT can also be estimated from polarimetric synthetic aperture radar (PolSAR) backscatter observations but the sensing depth of the PolSAR approach is limited when deep ALT is present. In this paper, we integrated these two approaches and applied a joint retrieval method to estimate the soil moisture profiles and ALT from the L-band InSAR and P-band PolSAR data acquired over the Arctic-boreal region during the 2017 Arctic-Boreal Vulnerability Experiment (ABoVE) airborne campaign.

Schaefer, Kevin M.↗
NASA NTRS2013

Hot-Film and Hot-Wire Anemometry for a Boundary Layer Active Flow Control Test

Unsteady active flow control (AFC) has been used experimentally for many years to minimize bluff-body drag. This technology could significantly improve performance of rotorcraft by cleaning up flow separation. It is important, then, that new actuator technologies be studied for application to future vehicles. A boundary layer wind tunnel was constructed with a 1ft-x-3ft test section and unsteady measurement instrumentation to study how AFC manipulates the boundary layer to overcome adverse pressure gradients and flow separation. This unsteady flow control research requires unsteady measurement methods. In order to measure the boundary layer characteristics, both hot-wire and hot-film Constant Temperature Anemometry is used. A hot-wire probe is mounted in the flow to measure velocity while a hot-film array lays on the test surface to measure skin friction. Hot-film sensors are connected to an anemometer, a Wheatstone bridge circuit with an output that corresponds to the dynamic flow response. From this output, the time varying flow field, turbulence, and flow reversal can be characterized. Tuning the anemometers requires a fan test on the hot-film sensors to adjust each output. This is a delicate process as several variables drastically affect the data, including control resistance, signal input, trim, and gain settings.

Control Test↗
NASA NTRS2018

Solar Radiation Control and Energy Harvesting Film

Some implementations provide a device (e.g., solar panel) that includes an active layer and a solar absorbance layer. The active layer includes a first N-type layer and a first P-type layer. The solar absorbance layer is coupled to a first surface of the active layer. The solar absorbance layer includes a polymer composite. In some implementations, the polymer composite includes one of at least metal salts and/or carbon nanotubes. In some implementations, the active layer is configured to provide the photovoltaic effect. In some implementations, the active layer further includes a second N-type layer and a second P-type layer. In some implementations, the active layer is configured to provide the thermoelectric effect. In some implementations, the device further includes a cooling layer coupled to a second surface of the active layer. In some implementations, the cooling layer includes one of at least zinc oxides, indium oxides, and/or carbon nanotubes.

Kang, Jin Ho↗
NASA NTRS1991

Whiskerless Schottky diode

A Schottky diode for millimeter and submillimeter wave applications is comprised of a multi-layered structure including active layers of gallium arsenide on a semi-insulating gallium arsenide substrate with first and second insulating layers of silicon dioxide on the active layers of gallium arsenide. An ohmic contact pad lays on the silicon dioxide layers. An anode is formed in a window which is in and through the silicon dioxide layers. An elongated contact finger extends from the pad to the anode and a trench, preferably a transverse channel or trench of predetermined width, is formed in the active layers of the diode structure under the contact finger. The channel extends through the active layers to or substantially to the interface of the semi-insulating gallium arsenide substrate and the adjacent gallium arsenide layer which constitutes a buffer layer. Such a structure minimizes the effect of the major source of shunt capacitance by interrupting the current path between the conductive layers beneath the anode contact pad and the ohmic contact. Other embodiments of the diode may substitute various insulating or semi-insulating materials for the silicon dioxide, various semi-conductors for the active layers of gallium arsenide, and other materials for the substrate, which may be insulating or semi-insulating.

Bishop, William L.↗
NASA NTRS1994

Resonant infrared detector with substantially unit quantum efficiency

A resonant infrared detector includes an infrared-active layer which has first and second parallel faces and which absorbs radiation of a given wavelength. The detector also includes a first tuned reflective layer, disposed opposite the first face of the infrared-active layer, which reflects a specific portion of the radiation incident thereon and allows a specific portion of the incident radiation at the given wavelength to reach the infrared-active layer. A second reflective layer, disposed opposite the second face of the infrared-active layer, reflects back into the infrared-active layer substantially all of the radiation at the given wavelength which passes through the infrared-active layer. The reflective layers have the effect of increasing the quantum efficiency of the infrared detector relative to the quantum efficiency of the infrared-active layer alone.

Farhoomand, Jam↗
NASA NTRS2009

Piezoelectrically enhanced photocathode

A photocathode, for generating electrons in response to incident photons in a photodetector, includes a base layer having a first lattice structure and an active layer having a second lattice structure and epitaxially formed on the base layer, the first and second lattice structures being sufficiently different to create a strain in the active layer with a corresponding piezoelectrically induced polarization field in the active layer, the active layer having a band gap energy corresponding to a desired photon energy.

Beach, Robert A.↗
NASA NTRS1994

Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

Fossum, Eric R.↗
NASA NTRS1995

Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

Fossum, Eric R.↗
NASA NTRS1979

Optimum bandgap of several III-V heterojunction solar cells

Results of computer analysis of AlAs/Ga(1-x)As n-on-p heterojunction solar cells are presented with particular consideration given to interface recombination effects. It is found that, for an AlAs window layer, GaAs appears to be the optimum semiconductor for the active layer. Furthermore, even if the interface recombination is neglected, GaAs comes so close to being the optimum III-V active layer material that the additional effort required to incorporate a few percent of InAs into the active layer appears to be much greater than any expected efficiency increase.

Sutherland, J. E.↗
NASA NTRS1993

Strained layer InP/InGaAs quantum well laser

Strained layer single or multiple quantum well lasers include an InP substrate, a pair of lattice-matched InGaAsP quarternary layers epitaxially grown on the substrate surrounding a pair of lattice matched In.sub.0.53 Ga.sub.0.47 As ternary layers surrounding one or more strained active layers of epitaxially grown, lattice-mismatched In.sub.0.75 Ga.sub.0.25 As. The level of strain is selected to control the bandgap energy to produce laser output having a wavelength in the range of 1.6 to 2.5 .mu.m. The multiple quantum well structure uses between each active layer. Diethyl zinc is used for p-type dopant in an InP cladding layer at a concentration level in the range of about 5.times.10.sup.17 /cm.sup.3 to about 2.times.10.sup.18 /cm.sup.3. Hydrogen sulfide is used for n-type dopant in the substrate.

Forouhar, Siamak↗