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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Multi-octave-spanning supercontinuum generation through high-energy laser filaments in YAG and ZnSe pumped by a 2.4 μm femtosecond Cr:ZnSe laser

Abstract We present experimental and numerical investigations of high-energy mid-infrared filamentation with multi-octave-spanning supercontinuum generation (SCG), pumped by a 2.4 μm, 250 fs Cr:ZnSe chirped-pulse laser amplifier. The SCG is demonstrated in both anomalous and normal dispersion regimes with YAG and polycrystalline ZnSe, respectively. The formation of stable and robust single filaments along with the visible-to-mid-infrared SCG is obtained with a pump energy of up to 100 μJ in a 6-mm-long YAG medium. To the best of the authors’ knowledge, this is the highest-energy multi-octave-spanning SCG from a laser filament in a solid. On the other hand, the SCG and even-harmonic generation based on random quasi-phase matching (RQPM) are simultaneously observed from the single filaments in a 6-mm-long polycrystalline ZnSe medium with a pump energy of up to 15 μJ. The numerical simulations based on unidirectional pulse propagation equation and RQPM show excellent agreement with the measured multi-octave-spanning SCG and even-harmonic generation. They also reveal the temporal structure of mid-infrared filaments, such as soliton-like self-compression in YAG and pulse broadening in ZnSe.

Optics↗
NASA NTRS1993

Investigation of ZnSe-coated silicon substrates for GaAs solar cells

Studies are being carried out to determine the feasibility of using ZnSe as a buffer layer for GaAs solar cells grown on silicon. This study was motivated by reports in the literature indicating ZnSe films had been grown by metallorganic chemical vapor deposition (MOCVD) onto silicon with EPD values of 2 x 10(exp 5) cm(sup -2), even though the lattice mismatch between silicon and ZnSe is 4.16 percent. These results combined with the fact that ZnSe and GaAs are lattice matched to within 0.24 percent suggest that the prospects for growing high efficiency GaAs solar cells onto ZnSe-coated silicon are very good. Work to date has emphasized development of procedures for MOCVD growth of (100) ZnSe onto (100) silicon wafers, and subsequent growth of GaAs films on ZnSe/Si substrates. In order to grow high quality single crystal GaAs with a (100) orientation, which is desirable for solar cells, one must grow single crystal (100) ZnSe onto silicon substrates. A process for growth of (100) ZnSe was developed involving a two-step growth procedure at 450 C. Single crystal, (100) GaAs films were grown onto the (100) ZnSe/Si substrates at 610 C that are adherent and specular. Minority carrier diffusion lengths for the GaAs films grown on ZnSe/Si substrates were determined from photoresponse properties of Al/GaAs Schottky barriers. Diffusion lengths for n-type GaAs films are currently on the order of 0.3 microns compared to 2.0 microns for films grown simultaneously by homoepitaxy.

Huber, Daniel A.↗
NASA NTRS2002

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

The objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the crystals grown by vapor transport as results of buoyance-driven convection and growth interface fluctuations caused by irregular fluid-flows. ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, were grown by vapor transport technique with real time in-situ non-invasive monitoring techniques. The grown crystals were characterized extensively to correlate the grown crystal properties with the growth conditions. The following are the research progress in the past two years. In-situ monitoring of partial pressure by optical absorption technique and visual observation of the growing crystal were performed during vapor growth of ZnSe. Low-temperature photoluminescence (PL) spectra and glow discharge mass spectroscopy (GDMS) were measured on ZnSe starting materials provided by various vendors and on bulk crystals grown from these starting materials by physical vapor transport (PVT) to study the effects of purification and contamination during crystal growth process. Optical characterization was performed on wafers sliced from the grown crystals of ZnSe, ZnTe and ZnSe(1-x),Te(x), (0<x<0.4). Energy band gaps at room temperature were determined from optical transmission measurements and a best fit curve to the band gap vs. composition, x, data gives a bowing parameter of 1.45. Low-temperature photoluminescence (PL) spectra of ZnSe and ZnTe were dominated by near band edge emissions and no deep donor-acceptor pairs were observed. The PL spectrum exhibited a broad emission for the ZnSe(1-x),Te(x), samples, 0.09<x<0.39. The single broad PL emission spectra and the spectra measured as a function of temperature were interpreted as being associated with the exciton bound to Te clusters because of the high Te content in these samples. To validate numerical codes, in-situ monitoring during the PVT of HgI2 was designed. Optical absorption spectra of the vapor phase over HgI2 were measured for wavelengths between 200 and 600nm at sample temperatures between 349 and 610K. The Beer's Law constants for 15 wavelengths between 200 and 440 nm were determined. From these constants the vapor pressure of HgI2 was established as a function of temperature for the liquid and the solid Beta-phases To characterize the growth conditions during the PVT growth of In-doped ZnSe the optical absorbance of the vapor phase over the In-Se system were measured and were used to obtain the partial pressures of Se2(g) and In2Se(g).

Su, Ching-Hua↗
NASA NTRSDate not supplied

Vapor Growth of ZnSe-based Compound Semiconductors in Low Gravity environment on International Space Station

Six low-gravity experiments of crystal growth of ZnSe-based compound semiconductors by physical vapor transport (PVT) are scheduled to be processed inside Low Gradient Furnace (LGF) on Materials Science Research Rack (MSRR) in Material Science Laboratory (MSL) on International Space Station (ISS) starting from February 27th, 2023. The flight samples consist of three unseeded growths of ZnSe, Cr-doped ZnSe and ZnSeTe as well as growth of ZnSe on top of three single crystal ZnSe seeds with orientation of (100), (110) and (111). The main scientific objective of the flight experiments is to establish the effects of gravity-driven fluid flows on Earth to (i) the non-uniform incorporation of impurities and defects and (ii) the deviation from stoichiometry observed in the grown crystals caused by growth interface fluctuations and evolution as the results of buoyancy-driven convection and irregular fluid-flows. The investigation will also evaluate the effects of gravity on the PVT process by examining (i) the growth kinetics on various seed orientations, (ii) the dopant segregation and distribution in the Cr doped ZnSe, and (iii) the compositional segregation and distribution in the ternary ZnSeTe crystal grown by PVT. Additionally, from X-ray diffraction/topography and by measuring the density and distribution of various crystalline defects it will assess the self-induced strain effects developed during processing at elevated temperatures caused by the weight of the crystals. During the ground-based preparations, the following tasks have been accomplished: • Establish the thermodynamic properties of the ZnSe binary and related ternary systems by measuring the partial pressures of the vapor phase coexisting with the condensed phases and perform phase diagram calculations for comparison. • Evaluate the effects of gravity-driven convection in the growth process by performing experiments under various vapor transport orientations relative to gravity vector, i.e., horizontal, vertically stabilized and destabilized configurations. • Establish a quantitative correlation between growth parameters and the characteristics and properties of the grown crystals by characterizing the crystals using a variety of techniques. • Evaluate the fundamentals of the current theories on vapor transport and crystal growth kinetics by performing in-situ and real-time monitoring techniques during growth. • Develop a one-dimensional diffusion limited theory of mass transport and two- and three-dimensional numerical simulations of both mass transport and heat transfer and thus establish the microgravity requirements for the flight experiments and to predict the characteristics of the grown crystals such as the solid-vapor interface shapes… etc. and establish a fundamental understanding of the crystal growth process from the comparison with experimental results.

ZnSe↗
DOE OSTI2023

Optical, electrical, and EPR studies of polycrystalline Al:Cr:ZnSe gain elements

Transition metal-doped II-VI (TM:II-VI) chalcogenides are well-known laser materials for optically pumped middle-infrared lasers. Cr:ZnSe is a key representative of this class of transition metal doped II-VI gain media and is arguably considered the material of choice for optically pumped middle-infrared lasers. In addition to effective mid-IR lasing under optical excitation, these crystals, being wide-band semiconductors, hold the potential for direct electrical excitation. One way to form n-type conductivity in ZnSe crystals is by annealing them in a melt of Zn-Al alloy. However, this annealing of Cr:ZnSe crystals results in their purification and transfer of chromium to the melt of Zn-Al alloy. In this article, we report on optimizing the doping technique for providing n-type conductivity in Al:Cr:ZnSe crystals while preserving the chromium concentration. Al:Cr:ZnSe samples with resistivities ranging from 10.8 to 992 Ω-cm were fabricated. While the 2 + valence state of Cr is typically dominant in Cr:ZnSe, both Cr 2+ and Cr + were detected in Al:Cr:ZnSe samples. The maximum level of Cr + concentration was measured to be 4 × 10 18 cm -3 .

36 MATERIALS SCIENCE↗
NASA NTRS1993

Crystal growth of ZnSe and related ternary compound semiconductors by physical vapor transport

The materials to be investigated are ZnSe and related ternary semiconducting alloys (e.g., ZnS(x)Se(1-x), ZnTe(x)Se(1-x), and Zn(1-x)Cd(x)Se). These materials are useful for opto-electronic applications such as high efficient light emitting diodes and low power threshold and high temperature lasers in the blue-green region of the visible spectrum. The recent demonstration of its optical bistable properties also makes ZnSe a possible candidate material for digital optical computers. The investigation consists of an extensive ground-based study followed by flight experimentation, and involves both experimental and theoretical work. The objectives of the ground-based work are to establish the characteristics of the crystals grown on Earth as a basis for subsequent comparative evaluations of the crystals grown in a low gravity environment and to obtain the experimental data and perform the analyses required to define the optimum parameters for the flight experiments. During the six months of the Preliminary Definition Phase, the research efforts were concentrated on the binary compound ZnSe - the purification of starting materials of Se by zone refining, the synthesis of ZnSe starting materials, the heat treatments of the starting materials, the vapor transport rate measurements, the vapor partial pressure measurements of ZnSe, the crystal growth of ZnSe by physical vapor transport, and various characterization on the grown ZnSe crystals.

Su, Ching-Hua↗
NASA NTRS1997

ZnSe Window Layers for GaAs and GaInP2 Solar Cells

This report concerns studies of the use of n-type ZnSe as a window layer for n/p GaAs and GaInP2 solar cells. Emphasis was placed in this phase of the project on characterizing the interface between n-type ZnSe films grown on epi-GaAs films grown onto single crystal GaAs. Epi-GaAs and heteroepitaxial ZnSe films were grown by MOCVD with a Spire 50OXT Reactor. After growing epitaxial GaAs films on single crystal GaAs wafers, well-oriented crystalline ZnSe films were grown by MOCVD. ZnSe films were grown with substrate temperatures ranging from 250 C to 450 C. Photoluminescence studies carried out by researchers at NASA Lewis determined that the surface recombination velocity at a GaAs surface was significantly reduced after the deposition of a heteroepitaxial layer of ZnSe. The optimum temperature for ZnSe deposition appears to be on the order of 350 C.

Olsen, Larry C.↗
NASA NTRS1995

ZnSe Window Layers for GaAs and GaInP2 Solar Cells

This report concerns studies of the use of ZnSe as a window layer for GaAs solar cells. Well-oriented crystalline ZnSe films on (100) single crystal GaAs substrates were grown by MOCVD. In particular, ZnSe films were grown by reacting a zinc adduct with hydrogen selenide at temperatures in the range of 200 C to 400 C. X-ray diffraction studies and images obtained with an atomic force microscope determined that the films were highly oriented but were polycrystalline. Particular emphasis was placed on the use of a substrate temperature of 350 C. Using iodine as a dopant, n-type ZnSe films with resistivities in the range of .01 to .05 ohm-cm were grown on semi-insulating GaAs. Thus procedures have been developed for investigating the utility of n-type ZnSe window layers on n/p GaAs structures. Studies of recombination at n-ZnSe/n-GaAs interfaces in n-ZnSe/n-GaAs/p-GaAs cell structures are planned for future work.

Olsen, Larry C.↗
NASA NTRS1986

Low-temperature deposition of low resistivity ZnSe films by reactive sputtering

The use of reactive dc magnetron cosputtering of Zn and the dopant In in an H2Se/Ar gaseous mixture is described. It is observed that initial deposition using pure Zn targets produced yellowish transparent ZnSe films on glass with a film resistivity of 10 to the 8th ohms cm and deposition using a Zn target doped with a fixed 1 percent of In produced ZnSe films with resistivities of about 10,000 ohms cm. The improvement of film conductivity by optimizing the In content in the ZnSe films is discussed; the ZnSe resistivity dependence on In flux is studied. Optical absorption/transmission measurements reveal a photon energy band gap of 2.65 eV at room temperature and X-ray diffraction show highly oriented polycrystalline films on glass with the c axis parallel to the plane of the film. Compositional analysis was performed and the Zn/Se ratio is measure as 48.8/49.0 with an In concentration of 1.16 percent. ZnSe films deposited on glass and conducting SnO2-coated glass substrates with a resistance of 20 ohms cm and a substrate temperature of 120 C have been fabricated.

Stirn, R. J.↗
NASA NTRS1998

Characterization of PVT Grown ZnSe by Low Temperature Photoluminescence

ZnSe, a II-VI semiconductor with a large direct band gap of 2.7 eV at room temperature and 2.82 eV at 10 K, is considered a promising material for optoelectric applications in the blue-green region of the spectrum. Photoemitting devices and diode laser action has been demonstrated as a result of decades of research. A key issue in the development of II-VI semiconductors is the control of the concentration of the various impurities. The II-VI semiconductors seem to defy the effort of high level doping due to the well known self compensation of the donors and the acceptors. A good understanding of roles of the impurities and the behavior of the various intrinsic defects such as vacancies, interstitials and their complexes with impurities is necessary in the development and application of these materials. Persistent impurities such as Li and Cu have long played a central role in the photoelectronic properties of many II-VI compounds, particularly ZnSe. The shallow centers which may promote useful electrical conductivity are of particular interest. They contribute the richly structured near gap edge luminescence, containing weak to moderate phonon coupling and therefore very accessible information about the energy states of the different centers. Significance of those residual impurities which may contribute such centers in II-VI semiconductors must be fully appreciated before improved control of their electrical properties may be possible. Low temperature photoluminescence spectroscopy is an important source of information and a useful tool of characterization of II-VI semiconductors such as ZnSe. The low temperature photoluminescence spectrum of a ZnSe single crystal typically consists of a broad band emission peaking at 2.34 eV, known as the Cu-green band, and some very sharp lines near the band gap. These bands and lines are used to identify the impurity ingredients and the defects. The assessment of the quality of the crystal based on the photoluminescence analysis is then possible. In this report we present the characterization of a ZnSe single crystal as grown by the physical vapor transport method, with special intention paid to the possible effects of the gravitational field to the growth of the crystal.

Wang, Ling Jun↗
NASA NTRS1984

LEED and AES characterization of the GaAs(110)-ZnSe interface

In this paper, a study is conducted of the composition and structure of epitaxial ZnSe films grown by congruent evaporation on GaAs(110) at a rate of 2 A/min. It is found that the films grown on 300 C GaAs are nearly stoichiometric and form an abrupt interface with the substrate. Films grown at higher temperature (T greater than 350-400 C) are Se rich. The crystallinity of films grown at 300 C is good and their surface atomic geometry is identical to that of a ZnSe crystal. The GaAs-ZnSe interface geometry seems to be dominated by the Se-substrate bonds. The adsorption of Se, during the formation of very thin ZnSe films (2-3 A), produces a (1 x 2) LEED pattern and modifications of the LEED I-V profiles, which probably indicate a change in the substrate atomic relaxation.

Tu, D.-W.↗
NASA NTRS1987

CuInSe2/ZnSe solar cells using reactively sputter-deposited ZnSe

Results on CuInSe2/ZnSe thin-film heterojunction photovoltaic devices are presented. By the use of reactive magnetron cosputtering of Zn and In dopant in Ar/H2Se, ZnSe thin films have been deposited on glass and conducting SnO2-coated glass substrates with resistivity as low as 20 ohm-cm at deposition temperatures as low as 120 C. Preliminary ZnSe depositions onto CuInSe2 films supplied by industrial laboratories are encouraging. Reactive-sputter-deposition parameters for ZnSe have yet to be optimized for CuInSe2 substrates; however, open-circuit voltages as high as 430 mV were obtained. The highest short-circuit current density, as determined by spectral response weighted for AM1.5 global insulation, was 37.4 mA/sq cm. In all cases, a highly conductive ZnO film was overcoated onto the ZnSe to reduce the overall sheet resistance.

Nouhi, A.↗
NASA NTRS1997

Crystal Growth of Undoped and Doped ZnSe

The surface morphology of freshly cleaved ZnSe single crystal grown by the physical vapor transport (PVT) method was investigated by Atomic Force Microscopy (AFM) and the results were correlated with Differential Scanning Calorimetry (DSC) data. Selenium precipitates have been revealed in undoped doped ZnSe crystals having a size of about 50 nm. A transition temperature around 221 C in the DSC measurements is interpreted as the eutectic temperature of Se-saturated ZnSe. The AFM images of doped ZnSe also show that possible Cr clusters are uniformly distributed and they have an estimated size of about 6 nm.

Davis, Swanson L.↗
NASA NTRS1999

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

Complete and systematic ground-based experimental and theoretical analyses on the Physical Vapor Transport (PVT) of ZnSe and related ternary compound semiconductors have been performed. The analyses included thermodynamics, mass flux, heat treatment of starting material, crystal growth, partial pressure measurements, optical interferometry, chemical analyses, photoluminescence, microscopy, x-ray diffraction and topography as well as theoretical, analytical and numerical analyses. The experimental results showed the influence of gravity orientation on the characteristics of: (1) the morphology of the as-grown crystals as well as the as-grown surface morphology of ZnSe and Cr doped ZnSe crystals; (2) the distribution of impurities and defects in ZnSe grown crystals; and (3) the axial segregation in ZnSeTe grown crystals.

Su, Ching-Hua↗
NASA NTRS2000

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

Interest in optical devices which can operate in the visible spectrum has motivated research interest in the II-VI wide band gap semiconductor materials. The recent challenge for semiconductor opto-electronics is the development of a laser which can operate at short visible wavelengths. In the past several years, major advances in thin film technology such as molecular beam epitaxy and metal organic chemical vapor deposition have demonstrated the applicability of II-VI materials to important devices such as light-emitting diodes, lasers, and ultraviolet detectors. With an energy gap of 2.7 eV at room temperature, and an efficient band- to-band transition, ZnSe has been studied extensively as the primary candidate for a blue light emitting diode for optical displays, high density recording, and military communications. By employing a ternary or quaternary system, the energy band gap of II-VI materials can be tuned to a specific range. While issues related to the compositional inhomogeneity and defect incorporation are still to be fully resolved, ZnSe bulk crystals and ZnSe-based heterostructures such as ZnSe/ZnSeS, ZnSe/ZnCdSe and ZnCdSe/ZnSeS have showed photopumped lasing capability in the blue-green region at a low threshold power and high temperatures. The demonstration of its optical bistable properties in bulk and thin film forms also make ZnSe a possible candidate material for the building blocks of a digital optical computer. Despite this, developments in the crystal growth of bulk H-VI semiconductor materials has not advanced far enough to provide the low price, high quality substrates needed for the thin film growth technology.

Su, Ching-Hua↗
NASA NTRS2006

Mechanical Characterization of ZnSe Windows for Use With the Flow Enclosure Accommodating Novel Investigations in Combustion of Solids (FEANICS) Module

Mechanical and physical properties of ZnSe windows to be used with the FEANICS (Flow Enclosure Accommodating Novel Investigations in Combustion of Solids) experiments were measured in order to determine design allowables. The average Young s modulus, Poisson's ratio, equibiaxial fracture strength, flaw size, grain size, Knoop hardness, Vicker s hardness, and branching constant were 74.3 +/- 0.1 GPa, 0.31, 57.8 +/- 6.5 MPa, 21 +/- 4 mm, 43 +/- 9 microns, 0.97 +/- 0.02 GPa, 0.97 +/- 0.02 GPa, and 1.0 +/- 0.1 MPa(square root of)m, respectively. The properties of current ZnSe made by chemical vapor deposition are in good agreement with those measured in the 1970 s. The hardness of CVD ZnSe windows is about one-twentieth of the sapphire window being replaced, and about one-sixth of that of window glass. Thus the ZnSe window must be handled with great care. The large grain size relative to the inherent crack size implies the need to use single crystal crack growth properties in the design process. In order to determine the local failure stresses in one of the test specimens, a solution for the stresses between the support ring and the edge of a circular plate load between concentric rings was derived

Salem, Jonathan A.↗
NASA NTRS2006

Mechanical Properties of ZnSe for the FEANICS Module

Mechanical and physical properties of ZnSe windows to be used with the FEANICS (Flow Enclosure Accommodating Novel Investigations in Combustion of Solids) experiments were measured in order to determine design allowables. In addition, the literature on crack growth properties was summarized. The average Young's modulus, Poisson's ratio, equibiaxial fracture strength, flaw size, grain size, Knoop hardness, Vicker's hardness, and branching constant were 74.3 +/- 0.1 GPa, 0.31, 57.8 +/- 6.5 MPa, 21 4 mm, 43 +/- 9 micron, 0.97 +/- 0.02 GPa, 0.97 +/- 0.02 GPa, and 1.0 +/- 0.1 MPam(exp 0.5), respectively. The properties of current ZnSe made by chemical vapor deposition are in good agreement with those measured in the 1970's. The hardness of CVD ZnSe windows is about one twentieth of the sapphire window being replaced, and about one-sixth of that of window glass. Thus the ZnSe window must be handled with great care. The large grain size relative to the inherent crack size implies the need to use single crystal crack growth properties in the design process. In order to determine the local failure stresses in one of the test specimens, a solution for the stresses between the support ring and the edge of a circular plate load between concentric rings was derived.

Salem, Jon↗