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At least 19 records

The electrical properties of 60 keV zinc ions implanted into semi-insulating gallium arsenide

The electrical behavior of zinc ions implanted into chromium-doped semiinsulating gallium arsenide was investigated by measurements of the sheet resistivity and Hall effect. Room temperature implantations were performed using fluence values from 10 to the 12th to 10 to the 15th power/sq cm at 60 keV. The samples were annealed for 30 minutes in a nitrogen atmosphere up to 800 C in steps of 200 C and the effect of this annealing on the Hall effect and sheet resistivity was studied at room temperature using the Van der Pauw technique. The temperature dependence of sheet resistivity and mobility was measured from liquid nitrogen temperature to room temperature. Finally, a measurement of the implanted profile was obtained using a layer removal technique combined with the Hall effect and sheet resistivity measurements.

Littlejohn, M. A.↗

Relation of morphology of electrodeposited zinc to ion concentration profile

The morphology of electrodeposited zinc was studied with special attention to the ion concentration profile. The initial concentrations were 9M hydroxide ion and 1.21M zincate. Current densities were 6.4 to 64 mA/sq cm. Experiments were run with a horizontal cathode which was observed in situ using a microscope. The morphology of the zinc deposit was found to be a function of time as well as current density; roughly, the log of the transition time from mossy to large crystalline type deposit is inversely proportional to current density. Probe electrodes indicated that the electrolyte in the cathode chamber was mixed by self inducted convection. However, relatively large concentration gradients of the involved species existed across the boundary layer of the cathode. Analysis of the data suggests that the morphology converts from mossy to large crystalline when the hydroxide activity on the cathode surface exceeds about 12 M. Other experiments show that the pulse discharge technique had no effect on the morphology in the system where the bulk concentration of the electrolyte was kept homogeneous via self induced convection.

May, C. E.↗

Preferential uptake of ammonium ions by zinc ferrocyanide

The concentration of ammonia from dilute aqueous solution could have facilitated many prebiotic reactions. This may be especially true if this concentration involves incorporation into an organized medium. We have shown that (unlike iron(III) ferrocyanide) zinc ferrocyanide,Zn2Fe(CN)6 xH2O, preferentially takes up ammonium ions from 0.01 M NH4Cl to give the known material Zn3(NH4)2[Fe(CN)6]2 xH2O, even in the presence of 0.01 M KCl. KCl alone gave Zn3K2[Fe(CN)6]2 xH2O. Products were characterized by elemental (CHN) analysis and powder X-ray diffraction (XRD). We attribute the remarkable specificity for the ammonium ion to the open framework of the product, which offers enough space for hydrogen-bonded ammonium ions, and infer that other inorganic materials with internal spaces rich in water may show a similar preference.

Non-NASA Center↗

Proteins with Novel Structure, Function and Dynamics

Recently, a small enzyme that ligates two RNA fragments with the rate of 10(exp 6) above background was evolved in vitro (Seelig and Szostak, Nature 448:828‐831, 2007). This enzyme does not resemble any contemporary protein (Chao et al., Nature Chem. Biol. 9:81‐83, 2013). It consists of a dynamic, catalytic loop, a small, rigid core containing two zinc ions coordinated by neighboring amino acids, and two highly flexible tails that might be unimportant for protein function. In contrast to other proteins, this enzyme does not contain ordered secondary structure elements, such as alpha‐helix or beta‐sheet. The loop is kept together by just two interactions of a charged residue and a histidine with a zinc ion, which they coordinate on the opposite side of the loop. Such structure appears to be very fragile. Surprisingly, computer simulations indicate otherwise. As the coordinating, charged residue is mutated to alanine, another, nearby charged residue takes its place, thus keeping the structure nearly intact. If this residue is also substituted by alanine a salt bridge involving two other, charged residues on the opposite sides of the loop keeps the loop in place. These adjustments are facilitated by high flexibility of the protein. Computational predictions have been confirmed experimentally, as both mutants retain full activity and overall structure. These results challenge our notions about what is required for protein activity and about the relationship between protein dynamics, stability and robustness. We hypothesize that small, highly dynamic proteins could be both active and fault tolerant in ways that many other proteins are not, i.e. they can adjust to retain their structure and activity even if subjected to mutations in structurally critical regions. This opens the doors for designing proteins with novel functions, structures and dynamics that have not been yet considered.

Proteins↗

Oligonucleotide synthesis catalyzed by the Zn/2+/ ion

Results of experiments are reported in which Zn(2+) ion catalyzed the formation of oligonucleotides from nucleoside phosphorimidazolides in aqueous solution, even in the absence of a template. Specifically, the imidazolides (ImpU or ImpA) polymerized to form ImpApA, and pApA, pApApA, and pApApApA, or the analogous uracil compounds. In addition, the expected hydrolysis products of the hydrolysis of ImpA were formed (pA, imidazole). Judging from the ratio of pA(n) over pA (with and without zinc ion), this ion increased the efficiency of phosphodiester-bond formation by up to 10 times. Possible mechanisms for the reaction are tentatively proposed.

Sawai, H.↗

Synthesis of oligoguanylates on oligocytidylate templates

The influence of template length in the self-condensation of guanosine 5'-phosphorimidazole in the presence of oligocytidylate templates is investigated. Reactions were carried out with cyclic cytidine 2',3'-phosphate, oligo- or polyC, and radioactively labeled guanosine 5'-phosphorimidazolide in the presence of Zn(+2) or Pb(+2) catalyst; product yields were determined by paper chromatography, thin-layer chromatography, and high-performance liquid chromatography. In the absence of a catalytic metal or in the presence of Pb(+2), a significant template effect is observed starting with the cytidine dimer and increasing in yield up to the hexamer template. Oligomers longer than the template are observed, and are predominantly 2'-5' linked in the presence of Pb(+2) and of mixed linkages in the uncatalyzed reaction. With the zinc ion as the catalyst, the template effect is first observed with the pentamer and is maximal with the heptamer. Products are predominantly 3'-5', and only a small proportion of them are longer than the template. The importance of the demonstrated formation of molecules with up to 10 guanosine units from oligocytidines as short as the dimer on the primitive earth is noted.

Fakhrai, H.↗

Ion beam sputter deposited zinc telluride films

Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter depoairion are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq. cm. resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x to to the -6/ohm. cm. for 300 angstrom film to 2.56 x 10 to the -1/ohm. cm. for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

Gulino, D. A.↗

Ion beam sputter deposited zinc telluride films

Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter deposition are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq cm resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x 10 to the -6th/ohm cm for 300 angstrom film to 2.56 x 10 to the -1/ohm cm for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

Gulino, D. A.↗

Development of GaAs solar cells

Solar cells and mesa diodes were fabricated by the implantation of zinc or beryllium ions into n-type gallium arsenide. Annealing temperatures above 750 C (zinc) or 650 C (beryllium) were found to produce 50% to 100% activation of the implanted ions. Junction depths of about 0.4 micron were produced by 600 keV zinc implants or 70 keV beryllium implants. P-layer sheet resistance was about 150 ohms for 2 x 10 to the 15th power cm/2 zinc or 1 x 10 to the 15th power cm/2 beryllium implants. This is sufficiently low for efficient solar cell fabrication. Contacting procedures were improved to yield reproducibly adherent, low resistance front and back contacts.

Source record↗

Decay of the zincate concentration gradient at an alkaline zinc cathode after charging

The transport of the zincate ion to the alkaline zinc cathode was studied by observing the decay of the zincate concentration gradient at a horizontal zinc cathode after charging. This decay was found to approximate first order kinetics as expected from a proposed boundary layer model. The concentrations were calculated from polarization voltages. The decay half life was shown to be a linear function of the thickness of porous zinc deposit on the cathode indicating a very rapid transport of zincate through porous zinc metal. The rapid transport is attributed to an electrochemical mechanism. From the linear dependence of the half life on the thickness the boundary layer thickness was found to be about 0.010 cm when the cathode was at the bottom of the cell. No significant dependence of the boundary layer thickness on the viscosity of electrolyte was observed. The data also indicated a relatively sharp transition between the diffusion and convection transport regions. When the cathode was at the top of the cell, the boundary layer thickness was found to be roughly 0.080 cm. The diffusion of zincate ion through asbestos submerged in alkaline electrolyte was shown to be comparable with that predicted from the bulk diffusion coefficient of the zincate ion in alkali.

Kautz, H. E.↗

Rechargeable battery which combats shape change of the zinc anode

A rechargeable cell or battery is provided in which shape change of the zinc anode is combatted by profiling the ionic conductivity of the paths between the electrodes. The ion flow is greatest at the edges of the electrodes and least at the centers, thereby reducing migration of the zinc ions from edges to the center of the anode. A number of embodiments are disclosed in which the strength and/or amount of electrolyte, and/or the number and/or size of the paths provided by the separator between the electrodes, are varied to provide the desired ionic conductivity profile.

Cohn, E. M.↗

Solid State Ultracapacitor

NASA analyzes, tests, packages, and fabricates electrical, electronic, and electromechanical (EEE) parts used in space vehicles. One area that NASA wishes to advance is energy storage and delivery. Currently, space vehicles use rechargeable batteries that utilize silver zinc or lithium ion electrochemical processes. These current state-of-the-art rechargeable batteries cannot be rapidly charged, contain harmful chemicals, and suffer from early wear-out mechanisms. A solid state ultracapacitor is an EEE part that offers significant advantages over current electrochemical and electrolytic devices. The objective of this research is to develop an internal barrier layer ultracapacitor (IBLC) using novel dielectric materials as a battery replacement with a focus on these advantages: longer life, lower mass-toweight ratio, rapid charging, on-demand pulse power, improved on-pad standby time without maintenance, and environmental friendliness. The approach is unique in two areas. A deposition technique is used that has been shown to produce a more uniformly coated nanoparticle than sol-gel, which has resulted in colossal permittivities. These particles are then distributed in an ink formulation developed at NASA Marshall Space Flight Center (MSFC) and deposited utilizing a 3D aerosol jet technique. This additive manufacturing technique controls layer thickness, resulting in extremely large capacitance and energy density.

Rolin, Terry D.↗

Surface acoustic wave/silicon monolithic sensor/processor

A new technique for sputter deposition of piezoelectric zinc oxide (ZnO) is described. An argon-ion milling system was converted to sputter zinc oxide films in an oxygen atmosphere using a pure zinc oxide target. Piezoelectric films were grown on silicon dioxide and silicon dioxide overlayed with gold. The sputtered films were evaluated using surface acoustic wave measurements, X-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, and resistivity measurements. The effect of the sputtering conditions on the film quality and the result of post-deposition annealing are discussed. The application of these films to the generation of surface acoustic waves is also discussed.

Kowel, S. T.↗