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Materials Data on YBi by Materials Project

YBi is Halite, Rock Salt structured and crystallizes in the cubic Fm-3m space group. The structure is three-dimensional. Y is bonded to six equivalent Bi atoms to form a mixture of corner and edge-sharing YBi6 octahedra. The corner-sharing octahedral tilt angles are 0°. All Y–Bi bond lengths are 3.17 Å. Bi is bonded to six equivalent Y atoms to form a mixture of corner and edge-sharing BiY6 octahedra. The corner-sharing octahedral tilt angles are 0°.

36 MATERIALS SCIENCE↗

Materials Data on YBi(OF)2 by Materials Project

YBi(OF)2 crystallizes in the tetragonal P-4m2 space group. The structure is three-dimensional. Y3+ is bonded in a body-centered cubic geometry to four equivalent O2- and four equivalent F1- atoms. All Y–O bond lengths are 2.43 Å. All Y–F bond lengths are 2.32 Å. Bi3+ is bonded in a body-centered cubic geometry to four equivalent O2- and four equivalent F1- atoms. All Bi–O bond lengths are 2.40 Å. All Bi–F bond lengths are 2.52 Å. O2- is bonded to two equivalent Y3+ and two equivalent Bi3+ atoms to form distorted corner-sharing OY2Bi2 tetrahedra. F1- is bonded in a 4-coordinate geometry to two equivalent Y3+ and two equivalent Bi3+ atoms.

36 MATERIALS SCIENCE↗

Effect of diamagnetic substitution on growth-induced anisotropy in (YBi)3Fe5O12

Films of (Y/3-x-y/Bi/x/Pb/y/)(Fe/5-z/Ga/z/)O12(Z = 0-1.1) and (Y/3-x-y/Bi/x/PB/y/)(Fe/5-w/In/w/)O12(w = 0-O.6) garnets were prepared by liquid-phase epitaxy. The effects of tetrahedral Ga and octahedral In substitution on the Bi-based growth-induced uniaxial anisotropy in (Ybi)3Fe5O12 films were measured. Both Ga and In resulted in a linear decrease in the anisotropy with increasing substitution. The effect of octahedral In was twice that of tetrahedral Ga.

Fratello, V. J.↗

In-situ observation of single-phase compositionally-complex oxide formation during high-pressure and high-temperature synthesis

Compositionally-complex oxides (CCOs) with equal or non-equal atomic ratios of multi-principal cations are single-phase solid solutions and possess unique structural characteristics and correlated possibilities for tailorable and exceptional functionalities. However, breakdown of single-phase structure and phase separation impair widespread adoption of CCOs under in-service environments. Here, in-situ phase transformation during high-pressure and high-temperature synthesis of an exemplary CCO (CeZrHf) 0.852 (YbY) 0.148 O 2-δ is for the first time clarified by using synchrotron X-ray energy dispersive diffraction. During synthesizing at ~4.5 GPa inside a large-volume press, ZrO 2 and HfO 2 gradually initiate lattice diffusion as monoclinic (022) and (220) peaks collapse and merge completely at 973 K; CeO 2 starts diffusing as the dramatic intensity change of cubic (220) peak above 1073 K, causing a metastable phase formation; single-phase solid solution ultimately forms at 1673 K. Importantly, the results revealed provide in-depth understanding of phase transformation dynamics and insights for novel design paradigm of CCOs.

36 MATERIALS SCIENCE↗

Materials design, synthesis, and transport properties of disordered rare-earth Zintl bismuthides with the anti -Th 3 P 4 structure type

The synthesis, structural elucidation, and transport properties of the extended series Ca 4–x RE x Bi 3 (RE = Y, La–Nd, Sm, Gd–Tm, and Lu; x ≈ 1) and Ca 4–x RE x Bi 3–δ Sb δ (RE = La, Ho, Er, and Lu; x ≈ 1, δ ≈ 1.5) are presented. Structural elucidation is based on single-crystal X-ray diffraction data and confirms the chemical drive of Ca4Bi3 with the cubic anti-Th 3 P 4 structure type (space group I4 ¯3d, no. 220, Z = 4) into a Zintl phase by the introduction of trivalent rare-earth atoms. The structure features complex bonding, heavy elements, and electron count akin to that of valence-precise semiconductors, making it an ideal target for thermoelectrics development. Introducing crystallographic site disorders at the cation site for the Ca 4–x RE x Bi 3 phase and both the cation and anion sites for the Ca 4–x RE x Bi 3–δ Sb δ phase brings about additional desirable characteristics for thermoelectric materials in the context of tuning knobs for lowering thermal conductivity. Electronic structure calculations of idealized Ca 3 YBi 3 and Ca 3 LaBi 3 compounds indicate the opening of indirect bandgaps at the Fermi level with magnitudes Eg = 0.38 eV and 0.57 eV, respectively. The electrical resistivity ρ(T) of some of the investigated phases measured on single crystals evolve in a metallic manner with magnitudes of order 1.4 mΩ cm near 500 K, thus supporting the notion of a degenerate semiconducting state, with the temperature dependence of the Seebeck coefficient α(T) suggesting the p-type behavior. Furthermore, the low electrical resistivity and the realization of a degenerate semiconducting state in the title phases present a window of opportunity for optimizing their carrier concentrations for enhanced thermoelectric performance.

36 MATERIALS SCIENCE↗

High performance p-type thermoelectric materials and methods of preparation

The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn4-xAxSb3-yBy wherein 0?x?4, A is a transition metal, B is a pnicogen, and 0?y?3 are formed for use in manufacturing thermoelectric devices with substantially enhanced operating characteristics and improved efficiency. Two methods of preparing p-type Zn4Sb3 and related alloys of the present invention include a crystal growth method and a powder metallurgy method.

Caillat, Thierry↗

Methods for making low bandgap perovskites

The present disclosure relates to a composition that includes a perovskite having a stoichiometry comprising A1-xFAxSn1-yBy(I1-zXz)3, where A is a first cation, B is a second cation, X is a halide, and 0.5≤x≤0.9, 0.5≤y≤0.9, and 0≤z≤1. In some embodiments of the present disclosure, A may include at least one of cesium, guanidinium, and/or methylammonium. In some embodiments of the present disclosure, X may include at least one of bromide and/or chloride. In some embodiments of the present disclosure, z may be equal to zero.

Zhu, Kai↗