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All sourcesNASA NTRSDOE OSTI
NASA NTRS2023

Thermal Stability of M x O y Doped Zirconia Aerogels (M = Y, Yb, Gd, Ce, Ca) Studied Through 1200°C

The high porosities and low densities of ceramic aerogels offer outstanding insulative performance in applications where weight is a critical factor. The high surface area-to-volume ratios and specific surface areas provide extremely low thermal conductivity, but also contribute to rapid densification of the pore structure at elevated temperatures. This densification diminishes their favorable properties and inhibits use of aerogels in high temperature applications. This work contributes to a design framework for thermally stable aerogels via the study of dopant chemistry (Y, Yb, Gd, Ca, Ce) in zirconia aerogels. The structural evolution was studied to 1200°C using nitrogen physisorption, scanning electron microscopy, and x-ray diffraction. The role of dopant identity and concentration in thermal stability was elucidated. In context of the design framework, dopant chemistry is an aggregate for many closely related material properties, each of which may contribute to aerogel structural evolution. To develop a truly predictive design framework for ceramic-based aerogels, systematic and comprehensive evaluation of thermodynamic and kinetic properties must be performed in conjunction with studies on structural evolution.

aerogel↗
NASA NTRS2001

Oxidative Recession, Sulfur Release, and Al203 Spallation for Y-Doped Alloys

Second-order spallation phenomena have been noted for Y-doped Rene'N5 after long term oxidation at 1150 degrees C. The reason for this behavior has not been conclusively identified. A mass equivalence analysis has shown that the surface recession resulting from oxidation has the potential of releasing about 0.15 monolayer of sulfur for every 1 mg/sq cm of oxygen reacted for an alloy containing 5 ppmw of sulfur. This amount is significant in comparison to levels that have been shown to result in first-order spallation behavior for undoped alloys. Oxidative recession is therefore speculated to be a contributing source of sulfur and second-order spallation for Y-doped alloys.

Smialek, James L.↗
NASA NTRS1991

High-T sub c fluorine-doped YBa2Cu3O(y) films on ceramic substrates by screen printing

Thick films of fluorine-doped YBa2Cu3O(y) were screen printed on highly polished alumina, magnesia spinel, strontium titanate, and yttria-stabilized zirconia (YSZ) substrates. They were annealed at 1000 C and soaked in oxygen at 450 C, followed by slow cooling to room temperature. The films were characterized by electrical resistivity measurements as a function of temperature and x-ray diffraction. The film on YSZ showed the best characteristics with a T sub c (onset) of 91 K, T sub c (R equals 0) of 88.2 K, and a transition width, delta T sub c (10-90 percent), of approximately 1.7 K. The film adhesion, probably controlled by interdiffusion of cations between the film and the substrate, was good in all cases except on strontium titanate where the film completely detached from the substrate.

Bansal, Narottam P.↗
NASA NTRSDate not supplied

Development of Luminescence Lifetime-Based Surface Temperature Mapping for Environmental Barrier Coatings

Luminescence lifetime-based temperature mapping for thermal barrier coatings (TBCs) has been previously demonstrated up to temperatures approaching 1200 °C. Advantages of this method include insensitivities to reflected radiation and emissivity uncertainties. Because of a push towards greater efficiency turbine engine operation using higher turbine inlet temperatures, there is an ongoing movement from TBC-coated superalloy turbine engine components to SiC/SiC ceramic matrix composite components protected by environmental barrier coatings (EBCs). The useful application of luminescence lifetime-based temperature mapping to EBCs requires a significant increase in high temperature capability from below 1200 °C up into the 1300 to 1500 °C temperature range where the much higher background thermal radiation is a challenging issue. In addition, the luminescing sensing layer must exhibit thermochemical compatibility with the EBC. To meet these requirements, Er-doped Y 2 SiO 5 was selected as the luminescing sensor layer material both for its enhanced temperature sensitivity above 1300 °C and its compatibility with rare-earth disilicate EBC topcoats. Both localized spot temperature measurements as well as luminescence lifetime imaging-based temperature mapping were demonstrated up to 1560 °C for Er-doped Y 2 SiO 5 disks. In addition, temperature mapping capability was demonstrated from a 15 µm thick Er-doped Y 2 SiO 5 layer at the surface of a Sc 2 Si 2 O 7 based EBC topcoat. Both localized spot and temperature mapping by luminescence lifetime imaging were demonstrated up to 1380 °C (upper temperature limit of this slurry-based layered EBC) with excellent suppression of background thermal radiation and no degradation of the Er-doped Y 2 SiO 5 temperature sensing surface layer. The source of the novel enhanced temperature sensitivity above 1300 °C will be discussed as well as a path towards compatibility between sensing layer and EBC topcoat to higher temperatures.

temperature measurement↗
NASA NTRS2001

Delayed Alumina Scale Spallation on Rene'n5+y: Moisture Effects and Acoustic Emission

The single crystal superalloy Rene'N5 (with or without Y-doping and hydrogen annealing) was cyclically oxidized at 1150 C for 1000 hours. After considerable scale growth (>= 500 hours), even the adherent alumina scales formed on Y-doped samples exhibited delayed interfacial spallation during subsequent water immersion tests, performed up to one year after oxidation. Spallation was characterized by weight loss, the amount of spalled area, and acoustic emission response. Hydrogen annealing (prior to oxidation) reduced spallation both before and after immersion, but without measurably reducing the bulk sulfur content of the Y-doped alloys. The duration and frequency of sequential, co-located acoustic emission events implied an interfacial crack growth rate at least 10(exp -3) m/s, but possibly higher than 10(exp 2) m/s. This is much greater than classic moisture-assisted slow crack growth rates in bulk alumina (10(exp -6) to 10(exp -3) m/s), which may still have occurred undetected by acoustic emission. An alternative failure sequence is proposed: an incubation process for preferential moisture ingress leads to a local decrease in interfacial toughness, thus allowing fast fracture driven by stored strain energy.

Smialek, James L.↗
NASA NTRS1995

(abstract) All Epitaxial Edge-geometry SNS Devices with Doped PBCO and YBCO Normal Layers

We will present our results on tapered-edge-geometry SNS weak link fabricated from c-axis oriented base-, counterelectrode and normal layers using a variety of processing conditions. To date, we have employed a variety of different normal materials (Co-doped YBCO, Y-doped PBCO, Ca-doped PBCO). We have been examining the junction fabrication process in detail and we will present our methods. In particular, we have been examining both epitaxial and non-epitaxial milling mask overlayers and we will present a comparison of both methods. These devices behave similar to the expectations of the resisively shunted junction model and conventional SNS proximity effect models but with some differences which will be discussed. We will present the detailed systematics of our junctions including device parameters versus temperature, rf and dc magnetic response for the various processing conditions.

epitaxial doped PBCO YBCO junction fabrication mil↗
NASA NTRSDate not supplied

Environmental Barrier Coating Surface Temperature Mapping Using a Compatible Er-Doped Sc 2 SiO 5 Temperature-Sensing Layer

Accurate surface temperature-mapping capabilities in the 1300 to 1500 °C range are needed for SiC/SiC ceramic matrix composites protected by environmental barrier coatings (EBCs) under testing in turbine engine environment facilities. The strong background thermal radiation at these higher temperatures is a challenging issue. Er-doped Y 2 SiO 5 was previously shown to be capable of achieving luminescence lifetime-based temperature mapping up to 1560 °C as a standalone material. However, compatibility issues between an Er-doped Y 2 SiO 5 surface temperature sensing layer and an underlying Sc 2 Si 2 O 7 -based EBC topcoat limited temperature mapping of the EBC surface to a maximum of 1380 °C. Therefore, an Er-doped Sc 2 SiO 5 temperature sensing layer has been subsequently developed with better compatibility with the Sc2Si2O7-based EBC topcoat. Localized spot temperature measurements as well as luminescence lifetime imaging-based temperature mapping were demonstrated up to 1535 °C from a 15 µm thick Er-doped Sc 2 SiO 5 layer at the surface of a Sc2Si2O7-based EBC topcoat, a significant improvement over the Er-doped Y2SiO5 layer 1380 °C temperature sensing limit. No degradation of the Er-doped Sc 2 SiO 5 temperature sensing surface layer was observed.

temperature measurement↗
NASA NTRS1990

Microstructure and magnetization of doped Y-Ba-Ca-O materials prepared by melt quench and post annealing method

Y-Ba-Cu-O bulk materials prepared using the melt quench and post annealing method were shown to have very high maximum as well as remanent magnetization. Studies were carried out on materials prepared using this method which deviate from the Y:Ba:Cu = 1:2:3 stoichiometry. In one series of materials, only the stoichiometry was changed, in particular by introducing an excess of yttrium. In other cases, dopants including several rare earths were introduced. Effects of variations in composition on microstructure and phase evolution are discussed, as well as effects on the magnetic susceptibility and on the magnetization. The results show that doped materials can exhibit improvements in magnetic properties. Furthermore, the use of dopants sheds light on the role of defect sites in flux pinning.

Hojaji, H.↗
NASA NTRS1995

Chemical stabilization and high pressure synthesis of Ba-free Hg-based superconductors, (Hg,M)Sr2Ca(n-1)Cu(n)O(y)(n=1 to approximately 3)

A homologous series of new Hg-based HTSC compounds, (Hg,M)Sr2Ca(n - 1)Cu(n)P(y) with n = 1 to 3, have been synthesized. The stabilization of the pure phases have been accomplished by chemical doping of third elements such as M = Cr, Mo and Re. While the Hgl2O1(n = 1) phase was readily obtained in this way, it was necessary to simultaneously dope Y into the Ca site to stabilize the Hg1212(n = 2) phase. On the other hand, single-phase Y-free Hg1212(n = 2) and Hg1223 (n = 3) samples were synthesized only under a high pressure of 6 GPa. In sharp contrast to the Ba containing compounds, all the samples prepared in the present study have been quite stable during the synthesis and no deterioration in air has been observed after the preparation.

Kishio, K.↗
NASA NTRS1989

Antiferromagnetism in Co-57-doped La2CuO(4-y) studied by Moessbauer spectroscopy

Moessbauer effect studies of Co-57-doped La2CuO(4-y) were performed at temperatures between 4.2 K and room temperature. These confirm the antiferromagnetic ordering of these compounds below room temperature. Temperature dependence of the quadrupole splitting shows that the hyperfine field is at an angle with the c-axis.

Jha, S.↗
NASA NTRS1979

Some TEM observations of Al2O3 scales formed on NiCrAl alloys

The microstructural development of Al2O3 scales on NiCrAl alloys has been examined by transmission electron microscopy. Voids were observed within grains in scales formed on a pure NiCrAl alloy. Both voids and oxide grains grew measurably with oxidation time at 1100 C. The size and amount of porosity decreased towards the oxide-metal growth interface. The voids resulted from an excess number of oxygen vacancies near the oxidemetal interface. Short-circuit diffusion paths were discussed in reference to current growth stress models for oxide scales. Transient oxidation of pure, Y-doped, and Zr-doped NiCrAl was also examined. Oriented alpha-(Al, Cr)2O3 and Ni(Al, Cr)2O4 scales often coexisted in layered structures on all three alloys. Close-packed oxygen planes and directions in the corundum and spinel layers were parallel. The close relationship between oxide layers provided a gradual transition from initial transient scales to steady state Al2O3 growth.

Smialek, J.↗
NASA NTRS1979

Some TEM observations of Al2O3 scales formed on NiCrAl alloys

The microstructural development of Al2O3 scales on NiCrAl alloys has been examined by transmission electron microscopy. Voids have been observed within grains in scales formed on a pure NiCrAl alloy. Both voids and oxide grains grew measurably with oxidation time at 1100 C. The size and amount of porosity decreased towards the oxide-metal growth interface. It was postulated that the voids resulted from an excess number of oxygen vacancies near the oxide-metal interface. Short-circuit diffusion paths were discussed in reference to current growth stress models for oxide scales. Transient oxidations of pure, Y-doped, and Zr-doped NiCrAl was also examined. Oriented alpha-(Al,Cr)2O3 and Ni(Al,Cr)2O4 scales often coexisted in layered structures on all three alloys. Close-packed oxygen planes and directions in the corundum and spinel layers were parallel. The close relationships between oxide layers provided a gradual transition from initial transient scales to steady state Al2O3 growth.

Smialek, J.↗
NASA NTRS2000

Optimizing Scale Adhesion on Single Crystal Superalloys

To improve scale adhesion, single crystal superalloys have been desulfurized to levels below 1 ppmw by hydrogen annealing. A transition to fully adherent behavior has been shown to occur at a sulfur level of about 0.2 ppmw, as demonstrated for PWA 1480, PWA 1484, and Rene N5 single crystal superalloys in 1100-1150 C cyclic oxidation tests up to 2000 h. Small additions of yttrium (15 ppmw) also have been effective in producing adhesion for sulfur contents of about 5 ppmw. Thus the critical Y/S ratio required for adhesion was on the order of 3-to-1 by weight (1-to-1 atomic), in agreement with values estimated from solubility products for yttrium sulfides. While hydrogen annealing greatly improved an undoped alloy, yielding <= 0.01 ppmw S, it also produced benefits for Y-doped alloys without measurably reducing the sulfur content.

Smialek, James L.↗
NASA NTRS2001

The Effect of Hydrogen Annealing on the Oxidation Resistance of Four EPM Single Crystal Superalloys

Four single crystal EPM (enabling propulsion materials) developmental airfoil superalloys were hydrogen annealed at 1300 C for up to 100 hours to remove sulfur and improve oxidation resistance. Although the 1100 and 1150 C cyclic oxidation resistance was remarkably improved by annealing for 24 or 100 hours, the behavior was still considerably inferior to that of commercially available single crystal superalloys, especially those that are either Y-doped or hydrogen annealed. Excessive degradation in the developmental alloys appeared to be correlated with low Cr contents and, to a lesser extent, high Co and Re contents.

Smialek, James L.↗
NASA NTRS1991

Microstructure and magnetization of Y-Ba-Cu-O prepared by melt quenching, partial melting and doping

Y-Ba-Cu-O samples prepared by means of a variety of melt-based techniques exhibit high values for their magnetic properties compared with those of samples prepared by solid state sintering. These techniques include single-stage partial melting as well as melt quenching followed by a second heat treatment stage, and they have been applied to the stoichiometric 123 composition as well as to formulations containing excess yttrium or other dopants. The structure of these melt-based samples is highly aligned, and the magnetization readings exhibit large anisotropy. At 77 K and magnetic field intensities of about 2 kOe, diamagnetic susceptibilities as high as -14 x 10(exp -3) emu/g were obtained in the cases of melt-quenched samples and remanent magnetization values as high as 10 emu/g for samples prepared by partial melting.

Hojaji, Hamid↗
NASA NTRS1986

Determination of carrier saturation velocity in high-performance In(y)Ga(1-y)As/Al(x)Ga(1-x)As modulation-doped field-effect transistors (with y between 0 and 0.2)

The relation between the intrinsic transconductance per unit gate width and the carrier saturation velocity, v(sat), is used to determine v(sat) for several high-performance pseudomorphic MODFET's with different InAs mole fractions (y). Measurements of In(y)Ga(1-y)As/AlGaAs MODFET's grown by MBE were found to give accurate v(sat) values at 77 K. Devices with y between 0 and 0.20 were shown to have higher v(sat) than conventional GaAs/AlGaAs MODFET's. An optimum y value for peak v(sat), which may optimize overall device performance, is expected.

Henderson, T. S.↗
NASA NTRS1988

Characterization of Mn-doped In(1-x)Ga(x)As(y)P(1-y) grown by LPEE

Mn-doped In(1-x)Ga(x)As(y)P(1-y) epilayers lattice matched to InP substrate have been grown by the liquid phase electroepitaxial (LPEE) technique. The variation of growth velocity of the epilayers with current density and the doping characteristics of Mn in the epilayer has been studied. The temperature dependence of the hole concentration and the mobility has been analyzed to determine the donor and acceptor densities, thermal activation energy of the level associated with Mn and the dominant scattering mechanisms that limit the hole mobility. The photoluminescence spectra of the doped epilayers are examined at 10 K as a function of the excitation level.

Iyer, Shanthi N.↗
NASA NTRS2013

Kinetic Monte Carlo Simulation of Cation Diffusion in Low-K Ceramics

Low thermal conductivity (low-K) ceramic materials are of interest to the aerospace community for use as the thermal barrier component of coating systems for turbine engine components. In particular, zirconia-based materials exhibit both low thermal conductivity and structural stability at high temperature, making them suitable for such applications. Because creep is one of the potential failure modes, and because diffusion is a mechanism by which creep takes place, we have performed computer simulations of cation diffusion in a variety of zirconia-based low-K materials. The kinetic Monte Carlo simulation method is an alternative to the more widely known molecular dynamics (MD) method. It is designed to study "infrequent-event" processes, such as diffusion, for which MD simulation can be highly inefficient. We describe the results of kinetic Monte Carlo computer simulations of cation diffusion in several zirconia-based materials, specifically, zirconia doped with Y, Gd, Nb and Yb. Diffusion paths are identified, and migration energy barriers are obtained from density functional calculations and from the literature. We present results on the temperature dependence of the diffusivity, and on the effects of the presence of oxygen vacancies in cation diffusion barrier complexes as well.

Good, Brian↗