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This presentation provides an overview of recent wide bandgap device radiation hardness assurance activities at NASA and via NASA-funded grant vehicles. Devices include enhancement mode power GaN HEMTs, RF GaN HEMTs, and SiC MOSFETs and JBS diodes.
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Understanding how the Sun, Earth, and other objects in the solar system interact with the space radiation environment is crucial for improving activities of humans on Earth and in space. Low-power, low-noise, multidirectional robust detectors for detecting ions with a wide range of mass and energies will provide a more complete understanding of space environment physics. To meet these challenges, new ion detectors based on wide band gap (WBG) semiconductors are being developed for integration on a variety of deep space platforms. NASA Glenn Research Center (GRC) is applying its expertise and facilities in harsh environment instrumentation to develop supporting technologies to enable improved instruments for space science missions. New detector technologies being developed at GRC include SiC solid-state devices as practical robust, thermally stable large area detectors for LET measurements in compact, stacked charged particle telescope. The low-noise, thermally stable nature of the WBG detectors allows a small multidirectional array of charged particle telescopes to be packed in a 6U CubeSat without active cooling for operation in lunar orbit or deep space. Using a full variety of different WBG detectors, an extremely compact instrument to provide multi-directional, comprehensive (composition, velocity, and direction) in-situ measurements of heavy ions in space plasma environments can be realized.
The vast majority of satellites and near-earth probes developed to date have relied upon photovoltaic power generation. If future missions to probe environments close to the sun will be able to use photovoltaic power, solar cells that can function at high temperatures, under high light intensity, and high radiation conditions must be developed. For example, the equilibrium temperature of a Mercury surface station will be about 450 C, and the temperature of solar arrays on the proposed "Solar Probe" mission will extend to temperatures as high as 2000 C (although it is likely that the craft will operate on stored power rather than solar energy during the closest approach to the sun). Advanced thermal design principles, such as replacing some of the solar array area with reflectors, off-pointing, and designing the cells to reflect rather than absorb light out of the band of peak response, can reduce these operating temperature somewhat. Nevertheless, it is desirable to develop approaches to high-temperature solar cell design that can operate under temperature extremes far greater than today's cells. Solar cells made from wide bandgap (WBG) compound semiconductors are an obvious choice for such an application. In order to aid in the experimental development of such solar cells, we have initiated a program studying the theoretical and experimental photovoltaic performance of wide bandgap materials. In particular, we have been investigating the use of GaP, SiC, and GaN materials for space solar cells. We will present theoretical results on the limitations on current cell technologies and the photovoltaic performance of these wide-bandgap solar cells in a variety of space conditions. We will also give an overview of some of NASA's cell developmental efforts in this area and discuss possible future mission applications.
Motivated by recent advances in wide-bandgap (WBG) gallium nitride (GaN) semiconductor technology, there is considerable interest in developing efficient solid-state power amplifiers (SSPAs) as an alternative to the traveling-wave tube amplifier (TWTA) for space applications. This article documents proof-of-concept hardware used to validate power-combining technologies that may enable a 120-W, 40 percent power-added efficiency (PAE) SSPA. Results in previous articles [1-3] indicate that architectures based on at least three power combiner designs are likely to enable the target SSPA. Previous architecture performance analyses and estimates indicate that the proposed architectures can power combine 16 to 32 individual monolithic microwave integrated circuits (MMICs) with >80 percent combining efficiency. This combining efficiency would correspond to MMIC requirements of 5- to 10-W output power and >48 percent PAE. In order to validate the performance estimates of the three proposed architectures, measurements of proof-of-concept hardware are reported here.
Motivated by recent advances in wide-bandgap (WBG) gallium nitride (GaN) semiconductor technology, there is considerable interest in developing efficient solidstate power amplifiers (SSPAs) as an alternative to the traveling-wave tube amplifier (TWTA) for space applications. This article documents the results of a study to investigate power-combining technology and SSPA architectures that can enable a 120-W, 40 percent power-added efficiency (PAE) SSPA. Results of the study indicate that architectures based on at least three power combiner designs are likely to enable the target SSPA. The proposed architectures can power combine 16 to 32 individual monolithic microwave integrated circuits (MMICs) with >80 percent combining efficiency. This corresponds to MMIC requirements of 5- to 10-W output power and >48 percent PAE. For the three proposed architectures [1], detailed analysis and design of the power combiner are presented. The first architecture studied is based on a 16-way septum combiner that offers low loss and high isolation over the design band of 31 to 36 GHz. Analysis of a 2-way prototype septum combiner had an input match >25 dB, output match >30 dB, insertion loss <0.02 dB, and isolation >30 dB over the design band. A 16-way design, based on cascading this combiner in a binary fashion, is documented. The second architecture is based on a 24-way waveguide radial combiner. A prototype 24-way radial base was analyzed to have an input match >30 dB (under equal excitation of all input ports). The match of the mode transducer that forms the output of a radial combiner was found to be >27 dB. The functional bandwidth of the radial base and mode transducer, which together will form a radial combiner/divider, exceeded the design band. The third architecture employs a 32-way, parallel-plate radial combiner. Simulation results indicated an input match >24 dB, output match >22 dB, insertion loss <0.23 dB, and adjacent port isolation >20 dB over the design band. All three architectures utilize a low-loss MMIC amplifier module based on commercial MMIC packaging and a custom microstrip-to-rectangular-waveguide transition. The insertion loss of the module is expected to be 0.45 dB over the design band.
Silicon carbide (SiC) power devices have demonstrated many performance advantages over their silicon (Si) counterparts. As the inherent material limitations of Si devices are being swiftly realized, wide-band-gap (WBG) materials such as SiC have become increasingly attractive for high power applications. In particular, SiC power metal oxide semiconductor field effect transistors' (MOSFETs) high breakdown field tolerance, superior thermal conductivity and low-resistivity drift regions make these devices an excellent candidate for power dense, low loss, high frequency switching applications in extreme environment conditions. In this paper, a novel power processing unit (PPU) architecture is proposed utilizing commercially available 4H-SiC power MOSFETs from CREE Inc. A multiphase straight boost converter topology is implemented to supply up to 10 kilowatts full-scale. High Temperature Gate Bias (HTGB) and High Temperature Reverse Bias (HTRB) characterization is performed to evaluate the long-term reliability of both the gate oxide and the body diode of the SiC components. Finally, susceptibility of the CREE SiC MOSFETs to damaging effects from heavy-ion radiation representative of the on-orbit galactic cosmic ray environment are explored. The results provide the baseline performance metrics of operation as well as demonstrate the feasibility of a hard-switched PPU in harsh environments.
With the development of wide band-gap (WBG) technology, the switching speed of power semiconductor devices is increased, which makes circuits more sensitive to parasitics. For three-level active neutral point clamped (3L-ANPC) converters, the over-voltage of non-conducting switches can be an issue. This paper analyzes the multiple commutation loops in 3L-ANPC converter and summarizes the impact factors of the over-voltage for the non-conducting switch. It is found that the nonlinearity of the output capacitance of the device can significantly influence the over-voltage. A simple control without introducing any additional hardware circuit is proposed to attenuate the impact of the nonlinearity. With the proposed control, the peak over-voltage of the non-conducting switch can be reduced significantly. Multi-pulse test is conducted for a 3L- ANPC converter built with silicon carbide (SiC) MOSFETs. The testing results show that the peak over-voltage decreases from 892 V to 624 V with the proposed control. More detailed analysis and experimental results will be provided in the final paper.
Gallium nitride (GaN), a wide bandgap (WBG) semiconductor, has emerged as a very promising material for electronic components due to the tremendous advantages it offers compared to silicon (Si), such as power capability, extreme temperature tolerance, and high frequency operation. This presentation summarizes a body of knowledge (BOK) document in reference to the development and current status of GaN technology obtained via literature and industry surveys. It provides a listing of the major manufacturers and their capabilities, as well as government, industry, and academic parties interested in the technology. The presentation also discusses GaN's applications in the area of power electronics, in particular those geared for space missions. Finally, issues relevant to the reliability of GaN-based electronic parts are addressed and limitations affecting the full utilization of this technology are identified.
Wide Bandgap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN) have emerged as promising technologies due to the advantages they offer over silicon (Si). Under the NASA Electronic Parts and Packaging (NEPP) Program, Glenn Research Center (GRC) supports a task called "Wide Bandgap Reliability and Application Guidelines." This presentation summarizes the work performed under this task, to be presented at the 2020 NEPP Electronics Technology Workshop in June 2020.
Gallium nitride (GaN), a wide bandgap (WBG) semiconductor, has emerged as a very promising material for electronic components due to the tremendous advantages it offers compared to silicon (Si), such as power capability, extreme temperature tolerance, and high frequency operation. This report serves as a body of knowledge (BOK) in reference to the development and current status of GaN technology obtained via literature and industry surveys. It provides a listing of the major manufacturers and their capabilities, as well as government, industry, and academic parties interested in the technology. The document also discusses GaN’s applications in the area of power electronics, in particular those geared for space missions. Finally, issues relevant to the reliability of GaN-based electronic parts are addressed and limitations affecting the full utilization of this technology are identified. This BOK focuses mainly on power applications for GaN, but will also briefly mention radio frequency (RF) applications for completeness.