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An acoustic surface wave oscillator is constructed from a semiconductor piezoelectric acoustic surface wave amplifier by providing appropriate perturbations at the piezoelectric boundary. The perturbations cause Bragg order reflections that maintain acoustic wave oscillation under certain conditions of gain and feedback.
A novel submillimeter wave backward-wave oscillator (BWO) that can provide tens of mW of power over a voltage tunable frequency range of more than an octave could serve as the local oscillator for a new class of array sensors in the range from 200 to 2000 GHz. The BWO appears to be the best device available for supporting a wide variety of heterodyne detection systems. It is voltage tunable, able to be phase locked, and can provide sufficient power for all envisioned systems including the arrays of detectors needed for fast data recovery in monitoring upper atmospheric conditions.
The machining of slow wave structures for high frequency backward-wave oscillators (BWO) is extremely difficult beyond 1 THz. Recently a microfabrication technique using photolithography and ion-beam assisted etching has been used to construct a prototype BWO operating at 200 to 265 GHz. The output coupler for such tubes remains a problem. Waveguides do not exist or are very lossy at the frequencies of interest (300 to 2000 GHz). This paper discusses several scaled experiments of optical output couplers for submillimeter BWOs. Various designs of planar antennas (Vivaldi horns) and lens-feed systems (Hyperhemispherical lens) were constructed and tested between 20 and 100 GHz using a spectrum analyzer. The lens system was also tested at 337 GHz using a CO2 pumped FIR laser.
A NASA program for the development of backward wave oscillators (BWOs) for the 500-2000 GHz frequency range is discussed. The BWO operation is based on a periodic etched slow wave structure which supports the induced traveling electromagnetic wave. The present submillimeter wave BWOs will employ a variation of the folded wave guide, the interdigital line. The use of a noncompressed electron beam results in less thermal loading of the circuit, smaller magnetic focusing fields, and higher current density of the circuit interaction region. The diamond etching procedure is described. Aluminum will be used for the metallization of the diamonds.
A square-wave oscillator circuit containing only simple resistor-capacitor combinations and transistors operates with high efficiency at relatively high power levels.
A ladder circuit especially useful in backward wave oscillators operating in the 500 GHz to 2000 GHz range has a waveguide with transversely orientated slabs which contact an upper wall of the waveguide. The edges of the slabs adjacent to the physical center of waveguide are curved segments and stubs of electrically conductive, nonmagnetic material. The ends of slabs include metal layers at opposite ends to provide a conductive leakage path. A ridge bar is attached to the inside of the bottom wall of the waveguide and includes a concave upper surface which partially straddles the electron beam. The novelty of the invention lies in the ladder structure compared of thin, vapor deposited rungs supported on the edge of diamond slabs; each rung having a curved segment which straddles the electron beam together with a ridge bar which also straddles the electron beam.
Axial mode shock wave oscillations in end-burning solid rocket motor, obtaining periodic solutions for flow properties, solid temperature and burning rate
Tunable submillimeter-wave generator is layered (AI/Ga)As device. Frequencies adjusted via applied voltages. New device concept offers potential to make relatively compact, efficient local oscillators for heterodyne mixers in submillimeter radar and imaging systems, nondestructive testing, diagnosis of plasmas, airborne spectroscopy of atmosphere, detection of weapons and other contraband, and communications.
Several scaled experiments of optical output couplers for submillimeter backward-wave oscillators (BWOs). Various designs of planar antennas (Vivaldi horns) lens-feed systems (hyperhemispherical lens) were constructed and tested between 20 and 100 GHz using a spectrum analyzer. The lens system was also tested at 337 GHz using a CO2 pumped FIR laser. It is found that Vivaldi horns have unsatisfactory resonances, perhaps because the horns studied were relatively short. Several techniques to maximize and flatten the frequency response of these horns are presented. The results suggest that alternate coupling schemes are superior to Vivaldi horns.
Density wave type flow oscillations in boiling Freon 11 examined, noting effects of partial evaporation superheat and liquid inlet temperature on stability
Using a simple model, the feasibility of applying the distributed feedback concept to the generation of acoustic surface waves is evaluated. It is shown that surface corrugation of the piezoelectric boundary in a semiconductor-piezoelectric surface acoustic wave amplifier could lead to self-sustained oscillations.
Birefringence of certain crystals sufficiently large to allow collinear backward wave interaction of three electromagnetic waves with signal frequency tunable over large portion of IR SPECTRUM
A submillimeter wave-generating integrated circuit includes an array of N photoconductive switches biased across a common voltage source and an optical path difference from a common optical pulse of repetition rate f sub 0 providing a different optical delay to each of the switches. In one embodiment, each incoming pulse is applied to successive ones of the N switches with successive delays. The N switches are spaced apart with a suitable switch-to-switch spacing so as to generate at the output load or antenna radiation of a submillimeter wave frequency f on the order of N f sub 0. Preferably, the optical pulse has a repetition rate of at least 10 GHz and N is of the order of 100, so that the circuit generates radiation of frequency of the order of or greater than 1 Terahertz.
Low-phase-noise microwave-frequency integrated oscillators provide compact solutions for various applications in signal processing, communications, and sensing. Surface acoustic waves (SAWs), featuring orders-of-magnitude shorter wavelength than electromagnetic waves at the same frequency, enable integrated microwave-frequency systems with much smaller footprint on chip. SAW devices also allow higher-quality (Q) factors than electronic components at room temperature. Here, we demonstrate a low-phase-noise gigahertz-frequency SAW oscillator on 128°Y-cut lithium niobate, where the SAW resonator occupies a footprint of 0.05 mm 2 . Leveraging phononic crystal band-gap-edge modes to balance between Q factors and insertion losses, our 1-GHz SAW oscillator features a low phase noise of -132.5 dBc/Hz at a 10-kHz offset frequency and an overlapping Hadamard deviation of 6.5 × 10 -10 at an analysis time of 64 ms. The SAW resonator-based oscillator holds high potential in developing low-noise sensors and acousto-optic integrated circuits.
Pressure fluctuations due to the interaction of a shock wave with a turbulent boundary layer were investigated. A simple model is proposed in which the shock wave is convected from its mean position by velocity fluctuations in the turbulent boundary layer. Displacement of the shock is assumed limited by a linear restoring mechanism. Predictions of peak root mean square pressure fluctuation and spectral density are in excellent agreement with available experimental data.
A review of various methods of phase and frequency synchronization of active MMIC based transmit/receive modules is presented, and particular emphasis is placed on the synchronization of oscillators through the use of an indirect subharmonic optical injection locking technique. In this approach, the nonlinear behavior of large-signal modulated laser diodes and solid-state oscillators is exploited to extend the bandwidth of the synchronizing link to the millimeter-wave frequency range. Experimental results of the phase and frequency coherency of two 21.5 GHz FET oscillators are reported. Optimum performance is achieved at a subharmonic factor of 1/4, with a locking range of 84 MHz and a phase noise degradation of only 14 dB. The phase coherency measurement of two injection-locked oscillators points to a phase shift, which is introduced as a result of the frequency detuning between the slave and master oscillator signals. A scheme to correct for this phase error is presented.
The results of thermionic emission and evaporation studies of single crystal LaB6 cathodes are given. A comparison between the (100), (210) and (310) crystal planes shows the (310) and (210) planes to possess a work function approx 0.2 eV lower than (100). This translates into a significant increase in current density, J, at a specified temperature. Comparison with a state-of-the-art impregnated dispenser cathode shows that LaB6 (310) is a superior cathode in nearly all respects except operating temperature at j 10 A/sq cm. The 1600 K thermionic and room temperature retarding potential work functions for LaB6 (310) are 2.42 and 2.50 respectively.
Recent observations of oscillation frequencies up to 56 GHz in resonant tunneling structures are discussed in relation to calculations by several authors of the ultimate frequency limits of these devices. It is found that calculations relying on the Wentzel-Kramers-Brillouin (WKB) approximation give limits well below the observed oscillation frequencies. Two other techniques for calculating the upper frequency limit were found to give more reasonable results. One method employs the solution of the time-dependent Schroedinger equation obtained by Kundrotas and Dargys (1986); the other uses the energy width of the transmission function for electrons through the double-barrier structure. This last technique is believed to be the most accurate since it is based on general results for the lifetime of any resonant state. It gives frequency limits on the order of 1 THz for two recently fabricated structures. It appears that the primary limitation of the oscillation frequency for double-barrier resonant-tunneling diodes is imposed by intrinsic device circuit parameters and by the transit time of the depletion layer rather than by time delays encountered in the double-barrier region.