Determination of background doping type in type-II superlattice using capacitance-voltage measurements with double mesa structure.
Abstract not provided.
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Abstract not provided.
Measurement of the voltage delivered by an electric distribution is a relatively straight forward task. When determining the harmonic distortion in the voltage, matters associated with what orders of the 50/60 Hz harmonics to be analyzed dictate the sampling rate. A study addressing this matter is presented.
There is accelerating interest in developing memory devices using antiferromagnetic (AFM) materials, motivated by the possibility for electrically controlling AFM order via spin-orbit torques, and its read-out via magnetoresistive effects. Recent studies have shown, however, that high current densities create non-magnetic contributions to resistive switching signals in AFM/heavy metal (AFM/HM) bilayers, complicating their interpretation. Here we introduce an experimental protocol to unambiguously distinguish current-induced magnetic and nonmagnetic switching signals in AFM/HM structures, and demonstrate it in IrMn 3 /Pt devices. A six-terminal double-cross device is constructed, with an IrMn 3 pillar placed on one cross. The differential voltage is measured between the two crosses with and without IrMn 3 after each switching attempt. For a wide range of current densities, reversible switching is observed only when write currents pass through the cross with the IrMn 3 pillar, eliminating any possibility of non-magnetic switching artifacts. Micromagnetic simulations support our findings, indicating a complex domain-mediated switching process.
Characterizing interface trap states in commercial wide bandgap devices using frequency-based measurements requires unconventionally high probing frequencies to account for both fast and slow traps associated with wide bandgap materials. The C - ψs technique has been suggested as a viable quasi-static method for determining the interface trap state densities in wide bandgap systems, but the results are shown to be susceptible to errors in the analysis procedure. Here this work explores the primary sources of errors present in the C - ψs technique using an analytical model that describes the apparent response for wide bandgap MOS capacitor devices. Measurement noise is shown to greatly impact the linear fitting routine of the 1/C$^{*2}_s$ vs Ψ s plot to calibrate the additive constant in the surface potential/gate voltage relationship, and an inexact knowledge of the oxide capacitance is also shown to impede interface trap state analysis near the band edge. In addition, a slight nonlinearity that is typically present throughout the 1/C$^{*2}_s$ vs Ψ s plot hinders the accurate estimation of interface trap densities, which is demonstrated for a fabricated n-SiC MOS capacitor device. Methods are suggested to improve quasi-static analysis, including a novel method to determine an approximate integration constant without relying on a linear fitting routine.
Abstract not provided.
Reliable diagnostics that measure the detached state of the ITER divertor plasma will be necessary to control heat flux to the divertor targets during steady state, burning plasma operation. This paper conducts an initial exploration into the feasibility of the divertor shunt diagnostic as a lightweight, robust, and real-time detachment sensor. This diagnostic is a set of shunt lead pairs that measure the voltage drop along the divertor cassette body, from which the plasma scrape-off layer (SOL) current is calculated. Using SOLPS-ITER simulations for control-relevant ITER plasma scenarios, the thermoelectric current magnitude along the SOL is shown to decrease significantly with the onset of partial detachment at the outer divertor target. Electromagnetic modelling of a simplified divertor cassette is used to develop a control-oriented inductance-resistance circuit model, from which SOL currents can be calculated from shunt pair voltage measurements. The sensitivity and frequency-response of the resulting system indicates that the diagnostic will accurately measure SOL thermoelectric currents during ITER operation. These currents will be a good measure of the detached state of the divertor plasma, making the divertor shunt diagnostic a potentially extremely valuable and physically robust sensor for real-time detachment control.
Distributed Energy Resources (DER) with smart inverters are becoming more prevalent as the need for renewable energy and grid stability increases. An important challenge arises when considering that inverterbased generation methods contribute less current during faults, rendering traditional overcurrent protection unsatisfactory. DERs have fault ride-through requirements when operating in high or low voltage, outlined by IEEE Std. 1547-2018. Faults cause the voltage to reach abnormal steady state magnitudes, depending on the fault resistance and fault type. There are several high voltage and low voltage ride-through zones defined by IEEE Std. 1547-2018. Each zone’s ride through duration decreases as the applicable voltage measurement, i.e., the phase RMS voltage, deviates from its nominal value. This presentation demonstrates the implementation of IEEE Std. 1547-2018 high and low voltage ridethrough grid support functions using a preexisting RSCAD model, discussing the challenges presented during this process. The implemented controls monitor the filtered phase voltages to have a more accurate reading of the applicable voltages. The controls sense the duration that the applicable voltage remains in a specific zone. The breaker trips and ceases energization to the grid when the duration is exceeded. The standard allows the operator to adjust the ride-through times and voltage zones from the default settings. These ranges are implemented into the runtime, which acts as the operator’s SCADA. The results show the accuracy of the voltage measurements, which remain within the IEEE Std. 1547-2018 for all cases.
Protection against dc faults is one of the main technical hurdles faced when operating converter-based HVdc systems. Protection becomes even more challenging for multi-terminal dc (MTdc) systems with more than two terminals/converter stations. In this paper, a hybrid primary fault detection algorithm for MTdc systems is proposed to detect a broad range of failures. Sensor measurements, i.e., line currents and dc reactor voltages measured at local terminals, are first processed by a top-level context clustering algorithm. For each cluster, the best fault detector is selected among a detector pool according to a rule resulting from a learning algorithm. The detector pool consists of several existing detection algorithms, each performing differently across fault scenarios. The proposed hybrid primary detection algorithm: i) offers superior performance compared to an individual detector through a data-driven approach; ii) detects all major fault types including pole-to-pole (P2P), pole-to-ground (P2G), and external dc faults; iii) identifies faults with various fault locations and impedances; iv) is more robust to noisy sensor measurements compared to existing methods; v) does not require exhaustive simulation and sampling for training the model. Performance and effectiveness of the proposed algorithm are evaluated and verified based on time-domain simulations in the PSCAD/EMTDC software environment. The results confirm satisfactory operation, accuracy, and detection speed of the proposed algorithm under various fault scenarios.
In this paper, we report on the first direct voltage and current measurements from a laser-generated magnetic field coil target. The magnetic field was observed to scale with the laser intensity as $B ∝ \mathcal{I}^{0.66±0.13}_\text{laser}$. This scaling relation can be derived from the measured voltage approximated by the laser-heated plasma electron temperature $T_e$. The experiments used a 1053 nm laser with pulse lengths ranging from 0.5 to 20 ns and intensities ranging from 10 9 to 10 14 W/cm 2 to generate an electric potential that drives current through the coil. We show that the behavior of the coil can be described with a lumped-element circuit model.
Spin-orbit-torque-driven dynamics have recently gained interest in the field of magnetism due to the reduced requirement of current densities and an increase in efficiency, as well as the ease of implementation of different devices and materials. From a practical point of view, the low-frequency dynamics below 1GHz is particularly interesting since dynamics associated with magnetic domains lie in this frequency range. While spin-torque excitation of high-frequency modes has been extensively studied, the intermediate low-frequency dynamics have received less attention, although spin torques could potentially be used for both manipulation of the spin texture and the excitation of dynamics. In this paper, we demonstrate that it is possible to drive magnetic vortex dynamics in a single microdisk by spin-Hall torque at varying temperatures and relate the results to transport properties. We find that the gyrotropic mode of the core couples to the low-frequency microwave signal and produces a measurable voltage. The dynamic measurements are in agreement with magnetic transport measurements and are supported by micromagnetic simulations. Our results open the door for integrating magnetic vortex devices in spintronic applications.
We present a method for joint phase identification and topology recovery in unbalanced three phase radial networks using only voltage measurements. By recovering phases and topology jointly, we utilize all three phase voltage measurements and can handle networks where some buses have a subset of three phases. Our method is theoretically justified by a novel linearized formulation of unbalanced three phase power flow and makes precisely defined and reasonable assumptions on line impedances and load statistics. We validate our method on three IEEE test networks simulated under realistic conditions in OpenDSS, comparing our performance to the state of the art. In addition to providing a new method for phase and topology recovery, our intuitively structured linearized model will provide a foundation for future work in this and other applications.
A single Nb3Sn short quadrupole coil in a mirror-magnet configuration was employed to investigate a wide range of phenomena and to serve as test-bed for diagnostics developments. A configurable array of spot-heaters was installed on the inner coil surface for control of induced quench conditions. Several different quench antenna arrays were positioned along the coil inner surface, and included significant sensor overlap for assessment of their relative efficiency and operation. Multiple acoustic sensors were placed on the pole and at coil ends. Optical fibers in grid configurations were put in different places on the coil and magnet for strain assessment, along with standard resistive strain gauges. Current spikes in the magnet circuit were monitored. This plethora of instrumentation aimed to support investigations on induced and spontaneous quenches, among other goals, and was supplemented by standard voltage-tap-based measurements. Voltage tap data of induced quenches from various spot-heater configurations was investigated for similarities to voltage development in spontaneous quenches. Quench antennas provided insights about current redistribution in the quenching coil and coil splices. The Quench Current-boosting Device was applied and the effect on coil training examined. This paper describes motivations behind the research, the overall test setup and main results.
The optimal fraction of Mg incorporation in sputter-deposited Mg X Zn 1−X O (MZO) emitters for thin-film CdTe-based solar cells is evaluated by varying it over a range of x from 0 to 0.35. This range allows a variation in the conduction band offset from −0.1 eV (cliff like) to +0.32 eV (spike like). Here, a maximum efficiency of 18.5% for cells with the bilayer CdSeTe/CdTe absorber occurs at x = 0.15, which corresponds to a spike-like band offset near 0.2 eV, as confirmed by X-ray photoelectron spectroscopy. In addition, good cell performance is seen over a fairly broad range of x extending from 0.1 to 0.25. The MZO optical bandgap increases with the Mg fraction, consistent with an increasing conduction band offset. Temperature-dependent current−voltage measurements and time-resolved photoluminescence show improvement in the emitter/absorber interface with the incorporation of Mg. Capacitance−voltage measurements show that the depletion region extends further into the absorber with more Mg, and X-ray diffraction confirms a change from a hexagonal-dominant crystal structure toward zinc blende at x = 0.35.
In this work, we developed operando Kelvin probe force microscopy (KPFM) to study the electrostatic potential distribution across perovskite cells under light and forward bias to gain a deeper understanding of device operation physics. As a case study, we selected perovskite cells with a SnO 2 -based electron-selective layer (ESL), which showed great potential for fabricating high-efficiency, hysteresis-free devices due to the deeper conduction band and higher electron mobility of SnO 2 . The as-made device showed a main junction at the perovskite/spiro interface. After light soaking and applying forward bias, the junction quality improved, possibly explained by filling trap states at the interfaces and by the perovskite absorber perhaps having a self-poling effect; the main junction is observed at the ESL/perovskite interface. The results are consistent with current-voltage measurements, device performance improves mainly with fill factor enhancement. The operando KPFM results should more closely reflect the real case during current density-voltage measurements or solar cell operation. The operando KPFM technique that we have developed can be a powerful tool to provide a deeper understanding of the device operation mechanism and to further optimize the device.
This paper addresses the design of local control methods for voltage control in distribution networks with high level of distributed energy resources (DERs). The designed control methods adapt the active and reactive power output of distributed energy resources proportional to the deviation of the local measured voltage magnitudes from a reference voltage, which is referred to as droop control. Thus, the design focuses on determining the droop characteristics which satisfy network-wide voltage magnitude constraints. The uncertainty and variability of DERs renders the design of optimal droop controls very challenging. Hence, this paper proposes chance constraints to limit the risk from intermittent DERs, by designing droop control coefficients that guarantee the satisfaction of network operational constraints with a specific probability. In addition, the proposed approach relies entirely on historical data rather than assuming knowledge of the probability distributions that characterize the uncertainty of DERs. The efficacy of the proposed method is demonstrated on a 37-bus distribution feeder.
This paper presents the impact of inverter grid- support functions (GSFs) on photovoltaic (PV) customer energy production on a real distribution feeder in Oahu, HI. These autonomous GSFs based on local voltage measurements are good alternatives to increase PV hosting capacity. However, these functions can result in PV energy curtailment to the customer, and this study addresses the concerns about the impact of inverter GSFs through detailed quasi-static time series (QSTS) simulations. It proposes four metrics: maximum and average GSF curtailment, average increased generation and average net generation change, to assess the impact of a given control on PV systems located on customer sites. It was found that curtailment of PV production is negligible for customers where peak voltage is within ANSI C84.1 range. A reliable relationship between curtailment and peak customer voltage is demonstrated, suggesting that peak voltage could be used as an indicator of customer curtailment.
Capacitance–voltage measurements are a powerful technique to determine doping profiles of semiconductor pn junctions and Schottky barrier diodes. The measurements were recently extended to III-V-based mid-wavelength nBn infrared detectors, and absorber doping densities have been extracted using the widely accepted Schottky approximation, where the potential drop across the device is assumed to be across the depleting absorber layer. However, this approach is limited to when the absorber region of the nBn is under high reverse bias and thus is only able to extract the absorber region doping profile. Here, we introduce a semi-analytical model that is capable of extracting barrier dopant polarity, doping concentration, and thickness, as well as contact and absorber layer doping concentrations, all from a capacitance–voltage measurement. Rather than solely considering the potential drop across the depleting layers, it considers the potential drop across the accumulating layer as well. This negative charge accumulation occurs for the contact and absorber layers in the case of reverse and forward biases, respectively. This allows for a single model to be applied to a capacitance–voltage curve at forward and reverse biases and it can provide regions of bias where the absorber transitions from depletion to accumulation. We compare the agreement of the semianalytical model with modeling results from commercially available finite element method software and experimental capacitance–voltage data. Finally, we show that the method is consistent with the Schottky approximation of extracting absorber doping densities at high reverse bias and discuss the model's limitations.