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Results for “Voltage measurement”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Capacitance voltage measurements on N-type InAs MOS diodes
Capacitance voltage measurements on interface of pyrolytically deposited n-type silicon dioxide- InAs MOS diodes as function of admittance at room and 77 K temperatures
Sampling Rate Comparison for Distribution System Voltage Measurements
Measurement of the voltage delivered by an electric distribution is a relatively straight forward task. When determining the harmonic distortion in the voltage, matters associated with what orders of the 50/60 Hz harmonics to be analyzed dictate the sampling rate. A study addressing this matter is presented.
High altitude current-voltage measurement of GaAs/Ge solar cells
Measurements of high-voltage (Voc of 1.2 V) gallium arsenide on germanium tandem junction solar cells at air mass 0.22 showed that the insolation in the red portion of the solar spectrum is insufficient to obtain high fill factor. On the basis of measurements in the LeRC X-25L solar simulator, these cells were believed to be as efficient as 21.68 percent AM0. Solar simulator spectrum errors in the red end allowed the fill factor to be as high as 78.7 percent. When a similar cell's current-voltage characteristic was measured at high altitude in the NASA Lear Jet Facility, a loss of 15 percentage points in fill factor was observed. This decrease was caused by insufficient current in the germanium bottom cell of the tandem stack.
Deep-level transient spectroscopy of Al(x)Ga(1-x)As/GaAs using nondestructive acousto-electric voltage measurement
The amplitude and the transient time constant of the acoustoelectric voltage were measured as a function of temperature to determine the activation energy of deep levels in Al(x)Ga(1-x)As/GaAs grown by molecular-beam epitaxy. In comparison to other methods based on monitoring the capacitance transient, deep-level transient spectroscopy has several advantages. The technique is nondestructive and highly sensitive, and, because of the dependence of the polarity of the acoustoelectric voltage on the carrier type, it yields information about the charge of the transient carriers and the type of deep traps involved in the release or trapping of these carriers.
Observation of current-induced switching in non-collinear antiferromagnetic IrMn 3 by differential voltage measurements
There is accelerating interest in developing memory devices using antiferromagnetic (AFM) materials, motivated by the possibility for electrically controlling AFM order via spin-orbit torques, and its read-out via magnetoresistive effects. Recent studies have shown, however, that high current densities create non-magnetic contributions to resistive switching signals in AFM/heavy metal (AFM/HM) bilayers, complicating their interpretation. Here we introduce an experimental protocol to unambiguously distinguish current-induced magnetic and nonmagnetic switching signals in AFM/HM structures, and demonstrate it in IrMn 3 /Pt devices. A six-terminal double-cross device is constructed, with an IrMn 3 pillar placed on one cross. The differential voltage is measured between the two crosses with and without IrMn 3 after each switching attempt. For a wide range of current densities, reversible switching is observed only when write currents pass through the cross with the IrMn 3 pillar, eliminating any possibility of non-magnetic switching artifacts. Micromagnetic simulations support our findings, indicating a complex domain-mediated switching process.
Metal-oxide semiconductor stability studies - Capacitance-voltage measurements Final report
Electrophysical instabilities of metal oxide semiconductors determined by capacitance-voltage curve analysis
Examples of induced voltages measured on aircraft
Tests were made on aircraft in which simulated lightning currents were injected into the aircraft and the resultant voltages and currents on the aircraft wiring measured. Aircraft used in the tests were the F-8 aircraft and the F-89J.
Current-voltage measurements in a supersonic mhd generator with an arc heated argon plasma.
Current-voltage characteristics in supersonic MHD GENERATOR with arc-heated argon plasma indicate two modes of discharge
A new technique to study transient conductivity under pulsed monochromatic light in Cr-doped GaAs using acoustoelectric voltage measurement
The transient conductivity of high-resistivity Bridgman-grown Cr-doped GaAs under pulsed monochromatic light is monitored using transverse acoustoelectric voltage (TAV) at 83 K. Keeping the photon flux constant, the height and transient time constant at the TAV are used to calculate the energy dependence of the trap density and its cross section, respectively. Two prominent trap profiles with peak trap densities of approximately 10 to the 17th/cu cm eV near the valence and the conduction bands are detected. These traps have very small capture cross sections in the range of 10 to the -23 to 10 to the -21st cm sq. A phenomenon similar to the persistent photoconductivity with transient time constants in excess of a few seconds in high-resistivity GaAs at T = 83 K is also detected using this technique. These long relaxation times are readily explained by the spatial separation of the photo-excited electron-hole pairs and the small capture cross section and large density of trap distribution near the conduction band.
Sources of error and methods to improve accuracy in interface state density analysis using quasi-static capacitance–voltage measurements in wide bandgap semiconductors
Characterizing interface trap states in commercial wide bandgap devices using frequency-based measurements requires unconventionally high probing frequencies to account for both fast and slow traps associated with wide bandgap materials. The C - ψs technique has been suggested as a viable quasi-static method for determining the interface trap state densities in wide bandgap systems, but the results are shown to be susceptible to errors in the analysis procedure. Here this work explores the primary sources of errors present in the C - ψs technique using an analytical model that describes the apparent response for wide bandgap MOS capacitor devices. Measurement noise is shown to greatly impact the linear fitting routine of the 1/C$^{*2}_s$ vs Ψ s plot to calibrate the additive constant in the surface potential/gate voltage relationship, and an inexact knowledge of the oxide capacitance is also shown to impede interface trap state analysis near the band edge. In addition, a slight nonlinearity that is typically present throughout the 1/C$^{*2}_s$ vs Ψ s plot hinders the accurate estimation of interface trap densities, which is demonstrated for a fabricated n-SiC MOS capacitor device. Methods are suggested to improve quasi-static analysis, including a novel method to determine an approximate integration constant without relying on a linear fitting routine.
Topology Identification of Power Distribution Systems Using Time Series of Voltage Measurements.
Abstract not provided.
Determination of background doping type in type-II superlattice using capacitance-voltage measurements with double mesa structure.
Abstract not provided.
Current-voltage measurements in a supersonic MHD generator with an arc heated argon plasma.
Electrical characteristics of supersonic MHD GENERATOR with arc heated argon plasma, noting discharge modes
Inexpensive pulse-train converter measures analog voltage
Converter measures small voltages or currents in presence of very large common-mode voltages (thousands of volts ac or dc). Advantages are low power consumption, transmission via single isolated channel, simplicity, and operation from single-polarity power supply.
Cell buffer with built-in test
A cell buffer with built-in testing mechanism is provided. The cell buffer provides the ability to measure voltage provided by a power cell. The testing mechanism provides the ability to test whether the cell buffer is functioning properly and thus providing an accurate voltage measurement. The testing mechanism includes a test signal-provider to provide a test signal to the cell buffer. During normal operation, the test signal is disabled and the cell buffer operates normally. During testing, the test signal is enabled and changes the output of the cell buffer in a defined way. The change in the cell buffer output can then be monitored to determine if the cell buffer is functioning correctly. Specifically, if the voltage output of the cell buffer changes in a way that corresponds to the provided test signal, then the functioning of the cell buffer is confirmed. If the voltage output of the cell buffer does not change correctly, then the cell buffer is known not to be operating correctly. Thus, the built in testing mechanism provides the ability to quickly and accurately determine if the cell buffer is operating correctly. Furthermore, the testing mechanism provides this functionality without requiring excessive device size and complexity.
Method for measuring alternator voltage transients
Transient voltage detection circuit measures voltage excursions and recovery times resulting from step-load changes applied to a combination alternator-voltage regulator.
Characteristics of composite carbon resistors used for measuring accelerator terminal voltages
Composite carbon resistor characteristics used for accelerator terminal voltage measurement