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At least 19 records

Self-aligned fabrication of vertical, fin-based structures

Modern power devices rely on complex, three-dimensional, vertical designs to increase their power density, ease their thermal management, and improve their reliability. However, fabrication techniques have historically relied on 2D processes for patterning lateral features. This work presents a new technology that uses multiple steps of angled depositions to fabricate self-aligned vertical, fin-based devices that avoid fundamental lithography resolution and alignment limitations. The fabrication flows of two devices, the self-aligned vertical finFET and the high-κ dielectric fin diode, are presented to demonstrate how angled depositions can readily achieve transistors with submicrometer, vertical gates in a source-first process and also create high-aspect ratio GaN fins with a record 70:1 aspect ratio.

Perozek, Joshua (ORCID:0000000251519131)↗

Simulation of gallium nitride vertical fin-shaped field effect transistor for use as thermal neutron detector

Through the use of a radiation detection system simulation framework, a gallium nitride vertical fin-shaped field effect transistor (FinFET) was studied for output response when utilized as a thermal neutron detector. The FinFET was assumed to had been backfilled with boron carbide, reactive to thermal neutrons. The GaN FinFET was modeled with radiation transport from MCNP, and the electronic transport from COMSOL Multiphysics. Fabricated FinFET devices (not neutron reactive) were tested to aid in the tuning of the COMSOL FinFET model. Through time-depenent studies, the drain current response pulse to simulated ionization due to single events lead to building of a database of device responses to radiation. By integrating the current pulses over time, the induced charge was calculated. Using the results of the radiation transport PTRAC file in combination with the induced charge database, an integrated charge spectrum was calculated.

Davidson, Bryce L.↗

Condensers and electronic assemblies

Provided is a condenser for use in an electronic assembly. The condenser includes a first vertical wall extending in a vertical direction, the first vertical wall defining a first plurality of vertical condensation channels within the first vertical wall, a second vertical wall extending in the vertical direction, the second vertical wall defining a second plurality of vertical condensation channels within the second vertical wall, and a first plurality of fins extending in the vertical direction, each of the first plurality of fins connected to the first vertical wall, the second vertical wall or both the first vertical wall and the second vertical wall.

Cousineau, Emily↗

Condensers and electronic assemblies

Provided is a condenser for use in an electronic assembly. The condenser includes a first vertical wall extending in a vertical direction, the first vertical wall defining a first plurality of vertical condensation channels within the first vertical wall, a second vertical wall extending in the vertical direction, the second vertical wall defining a second plurality of vertical condensation channels within the second vertical wall, and a first plurality of fins extending in the vertical direction, each of the first plurality of fins connected to the first vertical wall, the second vertical wall or both the first vertical wall and the second vertical wall.

Cousineau, Emily↗

A Study on Computational Cost Reduction of Simulations of Phase-Change Material (PCM) Embedded Heat Exchangers

Thermal storage can be implemented using Phase-Change Materials (PCM), which absorb significant latent heat with a relatively small temperature change. PCM phase-change processes are transient and are driven by thermal diffusion and natural convection – the latter, especially for melting process. Modeling and simulation of PCM heat exchangers (HX’s) is typically computationally intensive due to the relatively complex time-dependent physics. Most of the PCM modeling work in the literature uses high-order modeling tools such as Computational Fluid Dynamics (CFD) and Lattice-Boltzmann Method (LBM). For design purposes, the existing PCM modeling approaches are not practical, limiting researchers in their ability to investigate new ideas and different PCM’s with faster turnarounds. This paper presents a study investigating the reduction of computational cost of PCM embedded HX’s CFD models by evaluating the feasibility of spatial reduction without losing accuracy. The analysis consists of comparing full and partial domain under full melting conditions. The subject of this study is a single straight tube with circular transverse fins in the vertical orientation, using PCM’s with 35oC nominal melting temperature. Different tube and fin dimensions are investigated. Results indicate that the reduced domain reproduces - in half the run time - the same behavior as the full domain since the buoyancy effects are localized and patterned. The outputs from the partial domain simulation were used to build a non-general correlation for the PCM heat transfer characteristics and demonstrated how it can be implemented in a Finite Control Volume Reduced Order Model (ROM). The ROM can accurately reproduce the CFD simulations at 4 to 5 orders of magnitude faster.

25 ENERGY STORAGE↗

Automated Parameterized CFD Simulations of Phase-Change Material Embedded Heat Exchangers

Thermal storage can be implemented using Phase-Change Materials (PCM), which absorb significant latent heat with a relatively small temperature change. PCM phase-change processes are transient and are driven by thermal diffusion and natural convection – the latter, especially for melting process. Modeling and simulation of PCM heat exchangers is typically computationally intensive due to the relative complex time-dependent underlying physics. This paper presents a study investigating a single straight tube with circular transverse fins in the vertical orientation, using PCM’s with 37oC nominal melting temperature, leveraging automated parametric CFD simulations. The computational domain is reduced to 2D axisymmetric for a segment of the HX comprising a region in between two fins with constant wall temperature as boundary condition. This approach allows for faster evaluations of the transient thermal characteristics for a given design space of interest. Correlations and reduced order models (ROM’s) are developed. Results indicate that the ROM’s reproduce the CFD simulations with high accuracy for designs from the training data set, however, designs from cross-validation and test sets do not always have good agreement. The limited number of designs in the training set is a possible cause for the lack of robustness of the ROM’s and thus additional training designs will be added in future work. The ROM’s solve the simulations on average 500,000 times faster than CFD.

25 ENERGY STORAGE↗

Experimental Investigation of a Phase Change Material Charged Finned-Tube Heat Exchanger

Understanding different thermal performance aspects of phase change material heat exchangers (PCM-HX) is critical for designing future energy-efficient thermal energy storage systems. This paper presents an experimental performance analysis of a vertically oriented annular finned-tube PCM-HX in a cylindrical container tested under six different melting and solidification test conditions, varied by heat transfer fluid’s (HTF) inlet temperatures and flow directions. The PCM-HX structure with 20 evenly spaced fins was 3D printed in aluminum, and the PCM-HX container was 285 mm in height. The PCM-HX average porosity was 89.7%, where the PCM mass was 246.4 g. Water served as the HTF, and a PCM with a nominal phase change temperature of 35 °C was selected. Instead of opaque conventional insulation sheets, a combination of air-and-argon-filled see-through insulation cylinders was assembled with the PCM-HX to visualize the phase-change phenomena, while minimizing the uncertainties due to heat loss. In total, there were 78 T-type thermocouples installed in the test section which allows a more precise assessment of thermal mass and heat loss, which are often neglected in similar studies found in the literature. We validated the reliability of the test facility as the repeated test results had negligible deviations under the same test conditions. The energy balances between the estimated theoretical and experimentally calculated PCM storage, considering heat loss and thermal mass, were within ±9% deviation for all test conditions. From the experimental investigations, we made several following observations. It was found that the melting pattern of the finned-tube PCM-HX with small gaps between the container wall and the fins was largely affected by the HTF flow directions, unlike the typical straight annular tube PCM-HX. For effective charging and discharging processes, a combination of upward melting and downward solidification is recommended to shorten the test duration. However, an upward solidification should be considered to minimize the cavity formation between the fins caused by the PCM volume contraction during the solidification process.

25 ENERGY STORAGE↗

Component and efficient plate and frame absorber

An absorber for an absorption refrigeration system for a vertically mounted plate absorber has fins positioned over the plate to promote distribution of a fluid under flow as a nearly continuous thin film. The absorber has rows of fins that are evenly spaced with the fins occupying a portion of the active width of the plate with adjacent rows offset by the width of the plate. A combined evaporator-absorber module is constructed with the absorbing face of the absorber parallel with an evaporating surface of an evaporator where absorber solution and refrigerant fall as parallel falling sheets of liquid. The absorber is covered with a porous hydrophobic membrane to isolate the falling absorber solution from the falling liquid refrigerant.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

AlGaN/GaN Core-Shell Nanofin Diodes on Si Substrates for Vertical GaN Electronics

We demonstrate plasma-assisted MBE selective-area growth of GaN/AlGaN core-shell structures on Si(111) as a path to vertical GaN devices. The selective-area growth enables the full vertical and uniform core-shell fin structures to be realized in a continuous growth without breaking vacuum. TEM images and EDS mapping of the core-shell structures show well-aligned crystal structure and sharp heterointerfaces. Dislocation filtering was observed in STEM imaging of the fin structure. P-N junction diodes fabricated with GaN/AlGaN core-shell structures reveal ideality factors as low as 1.5, and the reverse-bias leakage is consistent with trap-assisted space-charge-limited conduction. While practical challenges exist, including material-related leakage, growth-related challenges and optimization, this demonstration of p-n junction by this method may provide a path to vertical Superjunction device concepts in GaN and related materials.

Xiong, Juncheng [University of Notre Dame, IN (Uni↗

Computational and Experimental Validation of Fractal-Fin, Dimpled Solar Heat Collector

A 3 foot x 3 foot x 3 foot aluminum solar collector was manufactured using computer numerical control. The interior of the device included six triangular dimpled fins for enhanced heat transfer. The interior vertical wall on the south side was also dimpled. The solar collector working fluid was based on water, and the collector consisted solely of passive heat transfer mechanisms (no moving parts), making it ideal for off-the-grid and rural applications. Two types of heat transfer experiments were conducted. One experiment had external flat heaters attached on the top and the front side, while the other four sides were insulated. Except for the bottom surface, the second experiment had all its exterior surfaces sprayed with black solar paint to collect as much solar heat as possible. Temperature data as a function of time was collected using 14 thermocouples spread strategically throughout the solar collector. In addition, computational fluid dynamics (CFD) simulations were conducted using the dynamic Smagorinsky large eddy simulation turbulence model. The first simulation considered that both the top and front surfaces were exposed to a fixed temperature of 313.7 K (105 °F), while the remaining four surfaces were insulated. For the second simulation, all conditions were the same, except that the temperature for both heated surfaces was raised to 350 K (170.3 °F). The two temperatures are expected to bound the solar collector operational temperature during the late- Spring, Summer, and early-Fall months. The solar collector design, experimental data, CFD output, and a discussion of five manufacturing approaches and costs are documented in this report.

14 SOLAR ENERGY↗

Fractal-Fin, Dimpled Solar Heat Collector with Solar Glaze

Exterior solar glaze was added to a 3 foot x 3 foot x 3 foot aluminum solar collector that had six triangular dimpled fins for enhanced heat transfer. The interior vertical wall on the south side was also dimpled. The solar glaze was added to compare its solar collection performance with unglazed solar collector experiments conducted at Sandia in 2021. The east, west, front, and top sides of the solar collector were encased with solar glaze glass. Because the solar incident heat on the north and bottom sides was minimal, they were insulated to retain the heat that was collected by the other four sides. The advantages of the solar glaze include the entrapment of more solar heat, as well as insulation from the wind. The disadvantages are that it increases the cost of the solar collector and has fragile structural properties when compared to the aluminum walls. Nevertheless, prior to conducting experiments with the glazed solar collector, it was not clear if the benefits outweighed the disadvantages. These issues are addressed herein, with the conclusion that the additional amount of heat collected by the glaze justifies the additional cost. The solar collector glaze design, experimental data, and costs and benefits are documented in this report.

14 SOLAR ENERGY↗

Metal additively manufactured wavy fin cold-plate architecture for improved thermal-hydraulic performance

Rapid growth in artificial intelligence and data center workloads demands high-performance liquid cooling to manage increasing chip power. This study presents two metal-additive-manufactured cold plates with sinusoidal fins, constant-amplitude wavy fins and linearly variable-amplitude wavy fins and compares them against metal-additive-manufactured straight fins using experiments conducted at 1 kW heat dissipation as well as high-fidelity 3D conjugate computational fluid dynamic simulations. The cold plates were printed in AlSi10Mg material and underwent design using a Python-automated workflow prior to manufacture and testing. The experiments show that wavy fins reduce the normalized thermal resistance by 35 to 45 % at water flow rates from 1 to 4 LPM. At a fixed 20 kPa pressure drop, the variable-waviness design lowered peak surface temperature by 9 °C and thermal resistance by 51 %, while edge-channel maldistribution in the constant wavy fin design limited gains. A thermal resistance breakdown revealed that 55–63 % of the total thermal resistance in wavy designs comes from base heat conduction, 27–33 % from fin heat conduction, and 9–13 % from fin heat convection, indicating the need to address conduction bottlenecks. Parametric sweeps identify a 3 mm fin pitch as optimal, and that horizontal inlet/outlet manifolds further reduce pressure drop by 30–60 % and thermal resistance by 9–16 % relative to vertical inlet-outlet manifolds. The results yield comprehensive guidelines for fin geometry, manifold alignment, material selection and additive-manufacturing constraints to realize high-performance liquid-cooled cold plates for power-dense electronics.

3d printing↗

Selective area doping of GaN toward high-power applications

Abstract Selective area doping in GaN, especially p-type, is a critical and inevitable building block for the realization of advanced device structures for high-power applications, including, but not limited to, current-aperture vertical electron transistors, junction termination extensions, junction barrier Schottky diodes, junction field-effect transistors (JFETs), vertical-channel JFETs, U-shaped metal–oxide–semiconductor field-effect transistors (U-MOSFETs), and Fin MOSFETs. This paper reviews and summarizes some of the recent advances in the fields of selective area etching and regrowth, ion implantation, and polarity-dependent doping that may lead to the practical realization of GaN-based power devices.

Physics↗

Vertical GaN Superjunction Diode on Sapphire with Kilovolt Dynamic Breakdown Voltage

The development of superjunction structures for use in vertical wide bandgap power devices promise to break the 1-D material limits. Additionally, the possibility of utilizing heteroepitaxial GaN-on-Sapphire wafer for vertical devices can significantly trim the material and device cost. This work introduces a quasi-vertical GaN-on-Sapphire superjunction PN diode design utilizing sputtered p-NiO on the etched GaN fins for superjunction formation. DC breakdown voltage is shown to vary with superjunction charge imbalance and significantly exceed the expected 1-D planar limit of 350V given the epilayer design used. A maximum breakdown voltage of 840 V is extracted for near charge balance conditions limited by leakage current. Dynamic breakdown of the device is characterized as a function of reverse voltage slew rate. A maximum dynamic breakdown voltage of 1160 V under a reverse voltage slew rate of 2000 V/μs is found.

Porter, Matthew↗

Experimental Investigation of the Heat Transfer between Finned Tubes and a Bubbling Fluidized Bed with Horizontal Sand Mass Flow

The sandTES technology utilizes a fluidized bed counter current heat exchanger for thermal energy storage applications. Its main feature is an imposed horizontal flow of sand (SiO2) particles fluidized by a vertical air flow across a heat exchanger consisting of several horizontal rows of tubes. Past international research on heat transfer in dense fluidized beds has focused on stationary (stirred tank) systems, and there is little to no information available on the impact of longitudinal or helical fins. Previous pilot plant scale experiments at TU Wien led to the conclusion that the currently available correlations for predicting the heat transfer coefficient between the tube surface and the surrounding fluidized bed are insufficient for the horizontal sand flow imposed by the sandTES technology. Therefore, several smaller test rigs were designed in this study to investigate the influence of different tube arrangements and flow conditions on the external convective heat transfer coefficient and possible improvements by using finned tubes. It could be shown that helically finned tubes in a transversal arrangement, where the horizontal sand flow is perpendicular to the tube axes, allows an increase in the heat transfer coefficient per tube length (i.e., the virtual heat transfer coefficient) by a factor of 3.5 to about 1250 W/m2K at ambient temperature. Based on the literature, this heat transfer coefficient is expected to increase at higher temperatures. The new design criteria allow the design of compact, low-cost heat exchangers for thermal energy storage applications, in particular electro-thermal energy storage.

25 ENERGY STORAGE↗

GaN vertical-channel junction field-effect transistors with regrown p-GaN by metal organic chemical vapor deposition (MOCVD)

Fabricating a vertical-channel junction field-effect transistor includes forming an unintentionally doped GaN layer on a bulk GaN layer by metalorganic chemical vapor deposition, forming a Cr/SiO 2 hard mask on the unintentionally doped GaN layer, patterning a fin by electron beam lithography, defining the Cr and SiO 2 hard masks by reactive ion etching, improving a regrowth surface with inductively coupled plasma etching, removing hard mask residuals, regrowing a p-GaN layer, selectively etching the p-GaN layer, forming gate electrodes by electron beam evaporation, and forming source and drain electrodes by electron beam evaporation. The resulting vertical-channel junction field-effect transistor includes a doped GaN layer, an unintentionally doped GaN layer on the doped GaN layer, and a p-GaN regrowth layer on the unintentionally doped GaN layer. Portions of the p-GaN regrowth layer are separated by a vertical channel of the unintentionally doped GaN layer.

Zhao, Yuji↗

Optimization and Experimental Validation of Annular Finned PCM-HX for a Domestic Hot Water Heater Application

The load profile for domestic water heating is time-dependent and can result in high energy demand during peak operating times. Shifting this peak load can have significant environmental and economic impacts. Phase change material (PCM)-based thermal energy storage (TES) is a potentially useful technology for peak load shifting in domestic hot water (DHW) applications thanks to its high latent heat and energy density. In this study, an annular finned-tube PCM-HX design concept was optimized for a load-shifting TES unit to meet the Department of Energy standard for a medium-usage DHW heater using a resistance-capacitance model (RCM) integrated with a Multi-Objective Genetic Algorithm. The optimized design comprised 70 identical annular finned-tube PCM-HX units connected in parallel and utilizing RT62HC as the PCM. A single PCM-HX unit was prototyped and tested in a vertically oriented setup with upward heat transfer fluid (HTF) flow. The hot water supply time was defined based on a cutoff temperature of 51.7°C. The as-designed mass flow rate (1.5 g/s) was tested to assess the performance of the prototyped PCM-HX unit for RCM validation. For the experimental investigation, RTD sensor bundles measured HTF temperature at the PCM-HX inlet and outlet, and a Coriolis flow meter accurately measured the HTF mass flow rate. The simulated discharging power underpredicted the experimental result by about 12%, and the simulated hot water supply time underpredicted the experimental result by approximately 13% for the as-designed mass flow rate (1.5 g/s). The average deviation of the hot water supply temperature between the experimental and RCM results during the complete PCM solidification process was 1.3 K for the as-designed mass flow rate. The overall good agreement between the experimental and RCM results provides confidence that computationally efficient models such as RCM can be utilized for design optimization of PCM-HXs.

42 ENGINEERING↗

Optical Flow Diagnostics of Counter Fluidization of Gravity-Driven Moving Packed Bed for a CSP Receiver Section Featuring Staggered Array of Cylindrical Pins

Particle fluidized beds have the potential to improve the efficiency of heat transfer in concentrated solar receiver furnace for use in next generation concentrated solar power (CSP) plants. This study presents an experimental investigation on the flow characterization of vertically downward moving packed bed with counter fluidization through an array of jets. To control the bubble size and its distribution in the bubbling fluidized bed, an array of cylindrical pin fins was arranged uniformly across the test article. The flow visualization was performed on the surface of transparent glass coated with electrically conductive materials for electrostatic dissipation purposes. The image acquisition was carried out via high-speed camera at a frequency of ~ 1kHz. The acquired images were analyzed in pairs with the help of a modern optical flow algorithm capable of calculating the movement of dense particle flow in the fluidized bed by tracking the light intensity of each predefined window of the frames. A comparison of fluidized beds with plane and pin-finned channels revealed distinct bubble behavior. Pin-finned channels were found to produce a larger number of small-sized bubbles, while plane channels generated fewer but larger bubbles at any given instant. The presence of pin fins was observed to reduce bubble size by preventing bubble merging and splitting larger bubbles when they encountered a pin.

concentrating solar power↗