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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

Effect of temperature on the electronic instability and the crystalline phase change at low temperature of V3Si type compounds

Equations assuming a Jahn-Teller type effect for the d band electrons in V3Si compounds are given, and the results of free-energy change calculations by using some approximations based on these equations are depicted. The tetragonal structure is converted to cubic as the temperature rises past T sub m which is calculated as 13 K. by the Batterman-Barrett method and is measured to be 20-5 K. Other parameters such as change of C sub p with temperature are predicted better.

Labbe, J.↗
NASA NTRS1978

Electronic instability and change of crystalline phase in compounds of the V3Si type at low temperature

In V3Si, the V atoms form an array of dense linear chains; a tight-binding approximation in one dimension was used to describe the d electrons. The electronic energy calculated by this method was reduced when the lattice is deformed. This lead to a band type of the Jahn Teller effect, which may explain the cubic to tetragonal transition which was observed at low temperatures. The theory can be extended to other superconductors of the V3X type when X=Ga, Ge, Sn, etcetera, or NB3SN.

Labbe, J.↗
NASA NTRS1972

Measurements on A-15 films.

Description of a method for the preparation of A-15 superconducting films by cosputtering. This method is useful for the study of both alloying effects and crystal structure stability determinations. Measurements in the A-15 systems Nb3Al, Nb3Al sub .75 Ge sub .25, and V3Si prepared by this method are presented. In addition a new method for the preparation of V3Si by 'reactive diffusion' is presented.

Cadieu, F. J.↗
NASA NTRS1972

Investigation of superconducting interactions and amorphous semiconductors

Research papers on superconducting interactions and properties and on amorphous materials are presented. The search for new superconductors with improved properties was largely concentrated on the study of properties of thin films. An experimental investigation of interaction mechanisms revealed no new superconductivity mechanism. The properties of high transition temperature, type 2 materials prepared in thin film form were studied. A pulsed field solenoid capable of providing fields in excess of 300 k0e was developed. Preliminary X-ray measurements were made of V3Si to determine the behavior of cell constant deformation versus pressure up to 98 kilobars. The electrical properties of amorphous semiconducting materials and bulk and thin film devices, and of amorphous magnetic materials were investigated for developing radiation hard, inexpensive switches and memory elements.

Janocko, M. A.↗
NASA NTRS1974

The effects of shock wave compaction on the transition temperatures of A15 structure superconductors

Several superconductors with the A15 structure exhibit a positive pressure coefficient, indicating that their transition temperatures increase with applied pressure. Powders of the composition Nb3Al, Nb3Ge, Nb3(Al0.75Ge0.25), and V3Si were compacted by explosive shock waves. The superconducting properties of these materials were measured before and after compaction and it was found that regardless of the sign of the pressure coefficient, the transition temperature is always lowered. The decrease in transition temperature is associated with a decrease in the particle diameter. The shock wave passage through a 3Nb:1Ge powder mixture leads to the formation of at least one compound (probably Nb5Ge3). However, the formation of the A15 compound Nb3Ge is not observed. Elemental niobium powder can be compacted by converging shock waves close to the expected value of the bulk density. Under special circumstances a partial remelting in the center of the sample is observed.

Otto, G. H.↗
NASA NTRS1984

X-ray Topographic Methods and Application to Analysis of Electronic Materials

Three supplementary X-ray techniques new to semiconductor applications are discussed. These are the Computer Aided Rocking Curve Analyzer, the Divergent Beam Method and a new method based on enhanced X-ray flourescence. The first method is used for quantitative mapping of an elastic or plastic strain field while the other two methods are used only to measure elastic strains. The divergent beam method is used for measuring the full strain tensor while the microfluorescence method is useful for monitoring strain uniformity. These methods are discussed in detail and examples of their application is presented. Among these are determination of the full strain ellipsoid in state-of-the-art liquid phase epitaxy deposited III-V epitaxial films; mapping of the plastic strain concentrations in tensile deformed Si; and quantitative determination of damage in V3Si due to ion implantation.

Mayo, W. E.↗