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V3Si crystallizes in the cubic Pm-3n space group. The structure is three-dimensional. V is bonded in a 6-coordinate geometry to two equivalent V and four equivalent Si atoms. Both V–V bond lengths are 2.35 Å. All V–Si bond lengths are 2.63 Å. Si is bonded to twelve equivalent V atoms to form a mixture of face and edge-sharing SiV12 cuboctahedra.
V3Si is High-temperature superconductor structured and crystallizes in the cubic Im-3m space group. The structure is three-dimensional. V is bonded to four equivalent V and two equivalent Si atoms to form VV4Si2 octahedra that share corners with six equivalent VV4Si2 octahedra, edges with four equivalent SiV6 octahedra, and edges with eight equivalent VV4Si2 octahedra. The corner-sharing octahedral tilt angles are 0°. All V–V bond lengths are 2.46 Å. Both V–Si bond lengths are 2.46 Å. Si is bonded to six equivalent V atoms to form SiV6 octahedra that share corners with six equivalent SiV6 octahedra and edges with twelve equivalent VV4Si2 octahedra. The corner-sharing octahedral tilt angles are 0°.
Equations assuming a Jahn-Teller type effect for the d band electrons in V3Si compounds are given, and the results of free-energy change calculations by using some approximations based on these equations are depicted. The tetragonal structure is converted to cubic as the temperature rises past T sub m which is calculated as 13 K. by the Batterman-Barrett method and is measured to be 20-5 K. Other parameters such as change of C sub p with temperature are predicted better.
In V3Si, the V atoms form an array of dense linear chains; a tight-binding approximation in one dimension was used to describe the d electrons. The electronic energy calculated by this method was reduced when the lattice is deformed. This lead to a band type of the Jahn Teller effect, which may explain the cubic to tetragonal transition which was observed at low temperatures. The theory can be extended to other superconductors of the V3X type when X=Ga, Ge, Sn, etcetera, or NB3SN.
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Description of a method for the preparation of A-15 superconducting films by cosputtering. This method is useful for the study of both alloying effects and crystal structure stability determinations. Measurements in the A-15 systems Nb3Al, Nb3Al sub .75 Ge sub .25, and V3Si prepared by this method are presented. In addition a new method for the preparation of V3Si by 'reactive diffusion' is presented.
The new CVD/ALD furnace that we are commissioning at Fermilab will allow us to deposit thin films of superconducting materials on RF cavities on different shapes, 1 cell and 9 cells 1.3GHz and 1 cell and 5 cells 650MHz. This furnace is capable to perform two different types of deposition: chemical vapor deposition and atomic layer deposition. Different materials are under investigation to push accelerating superconducting RF cavities to support higher accelerating fields and to operate with lower power loss. The first tests are focusing on the alternative A15 superconductors as: Nb3Ge, Nd3Ga, Nb3Sn, V3Si. The furnace has two different sources of precursors: 1) chlorine furnace, where we can produce the precursors in-situ, so we can build our own precursors and test how the deposited material is affecting the cavity performance, 2) 6 different bubblers, 3 low temperature bubblers and 3 high temperature bubblers. The deposition chamber is a versatile chamber with two independ ent vacuum volumes, to ensure a higher cleanliness of the deposited material. The furnace is designed to have two different configurations: High temperature, up to 1400 C, and low temperature, up to 400 C.
Research papers on superconducting interactions and properties and on amorphous materials are presented. The search for new superconductors with improved properties was largely concentrated on the study of properties of thin films. An experimental investigation of interaction mechanisms revealed no new superconductivity mechanism. The properties of high transition temperature, type 2 materials prepared in thin film form were studied. A pulsed field solenoid capable of providing fields in excess of 300 k0e was developed. Preliminary X-ray measurements were made of V3Si to determine the behavior of cell constant deformation versus pressure up to 98 kilobars. The electrical properties of amorphous semiconducting materials and bulk and thin film devices, and of amorphous magnetic materials were investigated for developing radiation hard, inexpensive switches and memory elements.
Several superconductors with the A15 structure exhibit a positive pressure coefficient, indicating that their transition temperatures increase with applied pressure. Powders of the composition Nb3Al, Nb3Ge, Nb3(Al0.75Ge0.25), and V3Si were compacted by explosive shock waves. The superconducting properties of these materials were measured before and after compaction and it was found that regardless of the sign of the pressure coefficient, the transition temperature is always lowered. The decrease in transition temperature is associated with a decrease in the particle diameter. The shock wave passage through a 3Nb:1Ge powder mixture leads to the formation of at least one compound (probably Nb5Ge3). However, the formation of the A15 compound Nb3Ge is not observed. Elemental niobium powder can be compacted by converging shock waves close to the expected value of the bulk density. Under special circumstances a partial remelting in the center of the sample is observed.
Three supplementary X-ray techniques new to semiconductor applications are discussed. These are the Computer Aided Rocking Curve Analyzer, the Divergent Beam Method and a new method based on enhanced X-ray flourescence. The first method is used for quantitative mapping of an elastic or plastic strain field while the other two methods are used only to measure elastic strains. The divergent beam method is used for measuring the full strain tensor while the microfluorescence method is useful for monitoring strain uniformity. These methods are discussed in detail and examples of their application is presented. Among these are determination of the full strain ellipsoid in state-of-the-art liquid phase epitaxy deposited III-V epitaxial films; mapping of the plastic strain concentrations in tensile deformed Si; and quantitative determination of damage in V3Si due to ion implantation.