Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Ultraviolet light”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records

Influencing Activity of Bats by Dimly Lighting Wind Turbine Surfaces with Ultraviolet Light

Wind energy producers need deployable devices for wind turbines that prevent bat fatalities. Based on the speculation that bats approach turbines after visually mistaking them for trees, we tested a potential light-based deterrence method. It is likely that the affected bats see ultraviolet (UV) light at low intensities. Here, we present the results of a multi-month experiment to cast dim, flickering UV light across wind turbine surfaces at night. Our objectives were to refine and test a practical system for dimly UV-illuminating turbines while testing whether the experimental UV treatment influenced the activity of bats, birds, and insects. We mounted upward-facing UV light arrays on turbines and used thermal-imaging cameras to quantify the presence and activity of night-flying animals. The results demonstrated that the turbines can be lit to the highest reaches of the blades with “invisible” UV light, and the animal responses to such experimental treatment can be concurrently monitored. The UV treatment did not significantly change nighttime bat, insect, or bird activity at the wind turbine. Our findings show how observing flying animals with thermal cameras at night can help test emerging technologies intended to variably affect their behaviors around wind turbines.

17 WIND ENERGY↗

Deep photoenhanced wet material etching using high-power ultraviolet light emitting diodes

Methods and systems for etching a substrate using photoenhanced wet etching techniques are described. At least one light emitting diode source is used to create a high intensity of ultraviolet light at the surface of the substrate or at one or more layers formed on the substrate. Etching rates in GaN substrates and GaN layers are improved by an order of magnitude over conventional systems. Systems and methods for forming a device structure free of a substrate are described. The device structure is grown or applied over a release layer on a substrate. The device structure is exposed to photoenhanced wet etch environments to vertically and laterally etch the release layer to separate the device structure from the substrate.

36 MATERIALS SCIENCE↗

Towards prevention and prediction of infectious diseases with virus sterilization using ultraviolet light and low-temperature plasma and bio-sensing devices for health and hygiene care

Inspired by the ideas of many authors, we provide insight on state-of-the-art potential technologies for the prevention and prediction of infectious diseases before they spread. This review also surveys virus sterilization with ultraviolet light and low temperature plasma technologies. Researchers in the various fields of medicine, materials, electronics, and plasma sciences have addressed increasingly challenging demands and the discussion encompasses the major challenges in societies that are faced with the threat of infectious diseases. In addition, technologies that use nanomaterials are evaluated for infection prevention and hygiene purposes. Advances in biomedical diagnostics for health care in terms of complementary metal-oxide-semiconductor transistors-based devices and telemetry for health monitoring are also reviewed.

60 APPLIED LIFE SCIENCES↗

Vacuum-ultraviolet light source for enhanced production of metastable krypton and xenon beams

Here, we demonstrate excitation of metastable krypton and xenon beams using a vacuum ultraviolet lamp and directly compare the performance of this method to metastable excitation based on a radio-frequency-driven plasma discharge. In our apparatus, lamp-based metastable excitation outperforms the plasma discharge across a wide range of beam flux values relevant for atom trap trace analysis (ATTA). Moreover, we do not observe significant degradation in lamp performance after over 160 h of operation. We find that lamp-based excitation is particularly advantageous at the smallest and largest beam fluxes tested, demonstrating the utility of this approach both for improving krypton ATTA and for enabling the detection of radioactive xenon isotopes using ATTA. Finally, we demonstrate an additional enhancement to lamp-based metastable excitation efficiency and stability by applying an external magnetic field.

Metastable noble gases↗

Bismuth-oxo Clusters for Next Generation Extreme Ultraviolet Light Photolithography

Photolithography is the primary technique used for the patterning of semiconducting materials for chip manufacturing; however, as requisite pattern dimensions and feature sizes continue to decrease, state-of-the-art lithographic methods now require the use of 13.5 nm extreme ultraviolet (EUV) light. The shift toward these higher energy wavelengths of light has resulted in a need for new single component materials, with high EUV absorption cross sections and high etch resistance. Herein, we report the exploration of Bi 9 O 7 (hfac) 13 as the first bismuth oxo cluster based EUV photoresist. It was determined this material has an exceptional EUV linear absorption coefficient (24 μm –1 ), nearly an order of magnitude larger than commercially available chemically amplified resists (CARs) (∼5 μm –1 ). Additionally, the resist was determined to be highly sensitive to EUV exposure and displayed a dose-to-gel of 10 mJ/cm 2 , undergoing ligand decomposition during exposure and cross-linking during the postexposure bake, which was supported by FTIR and residual gas analysis. In conclusion, this class of bismuth-oxo cluster resists can lead to the development of more efficient, effective and safe EUV resist materials required for next-generation photolithography.

MacKenzie, Harvey K. [Univ. of Victoria, BC (Canad↗

Design of AlGaN-Zn(Si,Ge)N2 quantum wells for high-efficiency ultraviolet light emitters

The effect of inserting a nm-scale layer of Zn(Si,Ge)N2 into an AlGaN quantum well structure designed for light emission in the wavelength range from 255 to 305 nm is investigated here. The enhanced confinement of the hole within the quantum well results in an enhancement of the overlap of the hole and electron wave functions, resulting in an enhancement of the radiative recombination rate. In this theoretical calculation, for emission at a 270 nm wavelength, the enhancement in the wavefunction overlap can reach a factor of 7 when compared to an AlGaN quantum well device specifically engineered for optimal emission at the identical wavelength. Increases of almost an order of magnitude in both the peak spontaneous emission intensity and the radiative recombination rate are predicted. The peak emission wavelength can be tuned from 255 to 305 nm by adjusting the width and/or the composition of the inserted layer. The proposed structures provide a route to higher efficiency ultraviolet practical light emitting diodes and lasers.

Physics↗

Shedding far-ultraviolet light on the donor star and evolutionary state of the neutron-star LMXB Swift J1858.6−0814

ABSTRACT The evolution of accreting X-ray binary systems is closely coupled to the properties of their donor stars. Consequently, we can constrain the evolutionary track a system is by establishing the nature of its donor. Here, we present far-ultraviolet (far-UV) spectroscopy of the transient neutron-star low-mass X-ray binary J1858 in different accretion states (low-hard, high-hard, and soft). All of these spectra exhibit anomalous N v, C iv, Si iv, and He ii lines, suggesting that its donor star has undergone CNO processing. We also determine the donor’s effective temperature, Td ≃ 5700 K, and radius, Rd ≃ 1.7 R⊙, based on photometric observations obtained during quiescence. Lastly, we leverage the transient nature of the system to set an upper limit of $\dot{M}_{\rm acc} \lesssim 10^{-8.5}~{\rm M}_{\odot }~\mathrm{ yr}^{-1}$ on the present-day mass-transfer rate. Combining these with the orbital period of the system, Porb = 21.3 h, we search for viable evolution paths. The initial donor masses in the allowed solutions span the range 1 M⊙ ≲ Md,i ≲ 3.5 M⊙. All but the lowest masses in this range are consistent with the strong CNO-processing signature in the UV line ratios. The present-day donor mass in the permitted tracks are 0.5 M⊙ ≲ Md,obs ≲ 1.3 M⊙, higher than suggested by eclipse modelling. Since Porb is close to the so-called bifurcation period, both converging and diverging binary tracks are permitted. If the former is confirmed, J1858 will end its life as an ultracompact system with a substellar donor.

Castro Segura, N. (ORCID:0000000258700443)↗

The rapid transition from star formation to AGN-dominated rest-frame ultraviolet light at z ≃ 4

ABSTRACT With the advent of deep optical-to-near-infrared extragalactic imaging on the degree scale, samples of high-redshift sources are being selected that contain both bright star-forming (SF) galaxies and faint active galactic nuclei (AGN). In this study, we investigate the transition between SF- and AGN-dominated systems at z ≃ 4 in the rest-frame ultraviolet (UV). We find a rapid transition to AGN-dominated sources brightward of MUV ≃ −23.2. The effect is observed in the rest-frame UV morphology and size–luminosity relation, where extended clumpy systems become point-source-dominated, and also in the available spectra for the sample. These results allow us to derive the rest-frame UV luminosity function (LF) for the SF- and AGN-dominated subsamples. We find the SF-dominated LF is best fit with a double power law, with a lensed Schechter function being unable to explain the existence of extremely luminous SF galaxies at MUV ≃ −23.5. If we identify AGN-dominated sources according to a point-source morphology criterion, we recover the relatively flat faint-end slope of the AGN LF determined in previous studies. If we instead separate the LF according to the current spectroscopic AGN fraction, we find a steeper faint-end slope of α = −1.83 ± 0.11. Using a simple model to predict the rest-frame AGN LF from the z = 4 galaxy LF, we find that the increasing impact of host galaxy light on the measured morphology of faint AGN can explain our observations.

Bowler, R. A. A.↗

2,4–dinitroanisole transformation during advanced oxidation with ultraviolet light emitting diodes and hydrogen peroxide

This study investigated the kinetics and reaction mechanisms associated with advanced oxidation of 2,4-dinitroanisole (DNAN) with light emitting diodes (LEDs) in the UV/H2O2 process. The pseudo first-order reaction rate constants for DNAN oxidation depended on the H 2 O 2 /DNAN molar ratio and were between 0.017 and 0.026 min –1 . Hydroxyl radical scavenging was strongly implicated by the experimental results. High mass spectrophotometric chromatograms showed the presence of several by-products, including three with ecotoxicity that is greater than that of DNAN. Transformation pathways were analysed using Density Functional Theory (DFT), which helped to predict the presence of experimentally detected DNAN by-products by considering Mulliken charges. Furthermore, this study is the first to elucidate DNAN transformation mechanisms using both experimental studies and computational chemistry.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

CMOS-fabricated ultraviolet light modulator using low-loss alumina piezo-optomechanical photonics

Ultra-violet (UV) and near-UV wavelengths are necessary for many important optical transitions for quantum technologies and various sensing mechanisms for biological and chemical detection. However, all well-known photonic platforms have excessively high losses in the UV, which has prevented photonic integrated circuits (PICs) being used to address these and other important application spaces. Photonic waveguides using low-loss alumina cores and silicon dioxide cladding have emerged as a promising solution because of alumina’s large optical bandgap and the high quality of films enabled by atomic layer deposition. These properties allow passive, low-loss waveguide operation down to at least 266 nm using multimode widths. However, to the best of our knowledge, active alumina PICs have only been realized using thermo-optic tuning, which precludes switching speeds shorter than approximately 100 microseconds, high circuit densities, and cryogenically compatible operation. Here, we introduce a CMOS-fabricated, piezo-optomechanical PIC platform using alumina waveguides and piezoelectric aluminum nitride strain actuators. The platform allows for sub-microsecond switching times, high circuit densities, and cryogenic operation which is desired in many UV PIC applications. We demonstrate a high-performance, reconfigurable optical filter operating at wavelengths as low as 320 nm. The filter has a 6-nanosecond switching time, a loaded linewidth of 3.3 GHz, tuning rate of 28 V/linewidth, and a hold power of less than 20 nW at one linewidth detuning. This work establishes the foundations for a new class of CMOS-fabricated, rapidly reconfigurable, and low-power UV photonic circuits compatible with wavelengths as low as 225 nm.

Castillo, Zachary A. [Sandia National Laboratories↗

Durability Research Is Pivotal for Perovskite Photovoltaics

Metal halide perovskite solar cells have shown promising power conversion efficiencies, but commercialization requires that decent durability is also demonstrated. Under normal operation, solar cells are subject to a complex combination of stressors, such as visible light, ultraviolet light, heat, humidity, mechanical stress and electric potential, which complicates the understanding of failure mechanisms. Existing stress tests do not act as a time machine. In new materials systems such as perovskite photovoltaics, the tests have no known relationship to field service. In this Perspective we recommend following a durability learning cycle that interleaves photovoltaic module engineering with field testing; accelerated testing; and preconditioning and performance engineering. We advocate for field testing to demonstrate real-world performance and identify field-relevant failure modes, and urge the community to develop accelerated and qualification tests that account for device metastability, variations in material composition and different/various processing methods. In conclusion, these practices are more difficult, but more important, than the simple pursuit of higher initial efficiencies.

14 SOLAR ENERGY↗

Water purification

Production of decontaminated water from contaminated water using a vessel, an inlet to the vessel wherein the contaminated water is introduced into the vessel, an outlet to the vessel wherein the decontaminated water is removed from the vessel, a plasmonic-photocatalyst membrane connected to the vessel, plasmonic nanoparticles or nanostructures connected to the plasmonic-photocatalyst membrane, and a source of ultraviolet light that directs ultraviolet light onto the vessel, the plasmonic-photocatalyst membrane, the plasmonic nanoparticles or nanostructures, and the contaminated water to produce the decontaminated water from the contaminated water.

Brisbin, Ryan P.↗

Carrier confinement and alloy disorder exacerbate Auger–Meitner recombination in AlGaN ultraviolet light-emitting diodes

The quantum efficiency of AlGaN ultraviolet light-emitting diodes declines (droops) at increasing operating powers due to Auger–Meitner recombination (AMR). Using first-principles density-functional theory, we show that indirect AMR mediated by electron–phonon coupling and alloy disorder can induce bulk C coefficients as large as ~10 –31 cm 6 /s. Furthermore, we find that the confinement of carriers by polarization fields within quantum wells severely relaxes crystal-momentum conservation, which exacerbates the rate of AMR over radiative recombination by an order of magnitude relative to the bulk. Furthermore, this results in a striking decrease in quantum efficiency at high power. Suppressing polarization fields and jointly increasing the well width would greatly mitigate AMR and efficiency droop.

36 MATERIALS SCIENCE↗

Systems and methods for fluoride ceramic phosphors for LED lighting

The present disclosure relates to a lighting component which may comprise a light emitting diode (LED) or laser diode (LD) for generating at least one of blue light or ultraviolet light. A fluoride phosphor matrix may be included, which may be consolidated into a phosphor ceramic structure including at least one of a transparent fluoride ceramic structure or a translucent fluoride ceramic structure, and positioned adjacent to the LED or LD. The phosphor ceramic structure generates at least one of red or orange light when irradiated by the light emitted from the LED or LD. The phosphor ceramic structure exhibits reduced thermal quenching relative to a fluoride particulate structure irradiated by the LED or LD.

Cherepy, Nerine↗

Ultraviolet (UV) light emitting device (LED) driven photocathode

An apparatus includes an electromechanical x-ray generator (MEXRAY) configured to charged capacitors using a small, high-voltage direct current. The apparatus also includes an ultraviolet (UV) light emitting diode (LED) driven photocathode device configured to control/modulate an electron dose rate of the MEXRAY or other vacuum DC, source.

Watson, Scott Avery↗

Toward streaked collective Thomson scattering measurements on an extreme ultraviolet plasma light source

Here we show through forward modeling calculations that streaked collective Thomson scattering measurements are feasible on laser-produced tin plasmas generated under conditions relevant for extreme ultraviolet lithography. Using a 532 nm probe laser beam, the feasibility of simultaneous measurements of electron plasma wave (EPW) and ion acoustic wave (IAW) spectra is investigated. Absolute photon counts for laser scattering off both waves are calculated. Probe laser electron heating and bremsstrahlung background radiation effects are accounted for. While a large spatiotemporal region can be successfully probed based on the IAW feature, only one measurement location can be accessed through the EPW as a result of the low signal to noise ratio. A portable/traveling tabletop system is proposed.

47 OTHER INSTRUMENTATION↗

In-Situ Nanoscale Focusing of Extreme Ultraviolet Solid-State High Harmonics

Extreme ultraviolet light delivering radiation with a wavelength shorter than approximately 100 nm is now available from solid-state sources. However, despite exceptional progress, efficient focusing of extreme ultraviolet photons to their ultimate diffraction limit remains a formidable challenge because of the precision of the focusing by curved, optical surfaces. Here we integrate coherent short-wavelength high-order harmonics from a MgO crystal, with a high-numerical-aperture, nanostructured, focusing element etched onto the surface of the crystal itself. We focus extreme ultraviolet light, seventh harmonic of an 800-nm laser, with a zone plate of numerical aperture 0.35, down to a waist radius of 150 nm, with 18% focusing efficiency. The estimated intensity approaches 10 7 W/cm 2 . Future developments may demonstrate nanoscale laser ablation and miniaturization of extreme ultraviolet coherent sources on a chip.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Intense quasi-monochromatic resonant harmonic generation in the multiphoton ionization regime

Resonant high-order harmonics, which result in quasimonochromatic extreme ultraviolet light with coherent intensity enhancement involving autoionizing resonances, have been demonstrated from laser-ablated plumes in the tunnel-ionization regime. Here, we demonstrate resonant harmonics in the previously unexplored multiphoton-ionization regime. We demonstrate an intense resonant harmonic from gallium with an intensity enhancement ratio of 714 relative to the neighboring harmonics, achieved without the need for extreme ultraviolet filtering methods, thus preventing a typical photon flux loss of more than 70%. Three-dimensional time-dependent Schrödinger equation calculations reveal that this increase in the enhancement ratio is due to the lowelectron wave packet spreading in the multiphoton-ionization regime. These results reveal a method for increasing the intensity and monochromaticity of intense multimicrojoule femtosecond extreme ultraviolet light and will also facilitate understanding of the involvement of autoionizing resonances in generating resonant harmonics in the multiphoton-ionization regime.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗