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Results for “Ultra-wide band”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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11 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2017

Development of an Ultra-wide band Receiver for the North America Array

The North America Array (NAA), also known as the next-generation Very Large Array (ngVLA), is a concept for a radio astronomical interferometric array operating in the frequency range 1.2 GHz to 116 GHz and designed to provide substantial improvements in sensitivity, angular resolution, and frequency coverage while reducing operational costs compared to the current Jansky Very Large Array (JVLA). At JPL, we are designing a single receiver package designed to operate across the 8 to 48 GHz frequency range, in contrast to the current JVLA, which covers this frequency range with five receiver packages. Reducing the number of receiving systems required to cover the full frequency range would reduce operating costs. We are developing a prototype integrated feed-receiver package with a system noise temperature that meets the requirements of the ngVLA/NAA primary science programs, with a design that meets the requirement of low long-term operational costs. The receiver package being developed at JPL consists of a feed horn, low-noise amplifier (LNA), and down-converters to analog intermediate frequencies. We report on the status of this receiver package development.

Lazio, Joseph↗
NASA NTRS2011

Secure Intra-Body Wireless Communications (SIWiC) System Project

SIWiC System is a project to investigate, design and implement future wireless networks of implantable sensors in the body. This futuristic project is designed to make use of the emerging and yet-to-emerge technologies, including ultra-wide band (UWB) for wireless communications, smart implantable sensors, ultra low power networking protocols, security and privacy for bandwidth and power deficient devices and quantum computing. Progress in each of these fronts is hindered by the needs of breakthrough. But, as we will see in this paper, these major challenges are being met or will be met in near future. SIWiC system is a network of in-situ wireless devices that are implanted to coordinate sensed data inside the body, such as symptoms monitoring collected internally, or biometric data collected of an outside object from within the intra-body network. One node has the capability of communicating outside the body to send data or alarm to a relevant authority, e.g., a remote physician.

Ahmad, Aftab↗
NASA NTRS2022

The Impact of Firn Models on Ultrawideband Brightness Temperatures in the Partially Coherent Model

The density profile of a polar ice sheet is an important parameter for the estimation of ice mass balance. Wave reflections caused by density variations are also a key uncertainty in the retrieval of ice sheet temperature profiles in Ultra-Wide band radiometry. In this paper, we examine different firn density profile models and analyze the subsurface reflections they cause using an analytical partially coherent approach. We also examine firn density profiles obtained from borehole measurements, from past UWBRAD modeling studies, from a community firn model, and from snow radar echo measurements. In previous studies, the ice sheet has been model as a 1D random medium with density variations in depth. However, horizontal density variations also exist, so that the ice sheet is a 3D random medium. Analyses using the partially coherent model show that in the presence of horizontal fluctuations, contributions from short scale variations vanish as the horizontal correlation length decreases due to the diffraction of waves.

Haokui Xu↗
NASA NTRS2017

24-71 GHz PCB Array for 5G-ISM

This presentation discusses the development of a low form factor Ultra-Wideband at Ka-Band and up to the Millimeter-Wave Spectrum.

phased array↗
NASA NTRS2016

Ultra-Wideband Phased Array for Millimeter-Wave 5G and ISM

Growing mobile data consumption has prompted the exploration of the millimeter-wave spectrum for large bandwidth, high speed communications. However, the allocated bands are spread across a wide swath of spectrum: fifth generation mobile architecture (5G): 28, 38, 39, 64-71 GHz, as well as Industrial, Scientific, and Medical bands (ISM): 24 and 60 GHz. Moreover, high gain phased arrays are required to overcome the significant path loss associated with these frequencies. Further, it is necessary to incorporate several of these applications in a single, small size and low cost platform. To this end, we have developed a scanning, Ultra-Wideband (UWB) array which covers all 5G, ISM, and other mm-W bands from 24-72 GHz. Critically, this is accomplished using mass-production Printed Circuit Board (PCB) fabrication.

Ultra-wide band phased array↗
NASA NTRS2017

Ultra-Wideband Array in PCB for Millimeter-Wave 5G and ISM

Growing mobile data consumption has prompted the exploration of the millimeter-wave spectrum for large bandwidth, high speed communications. However, the allocated bands are spread across a wide swath of spectrum: Fifth generation mobile architecture (5G): 28, 38, 39, 6471 GHz; Industrial, Scientific, and Medical bands (ISM): 24, 60 GHz. Moreover, high gain phased arrays are required to overcome the significant path loss associated with these frequencies. Further, it is necessary to incorporate several of these applications in a single, small size and low cost platform. To this end, we have developed a scanning, Ultra-Wideband (UWB) array which covers all 5G, ISM, and other mm-W bands from 2472 GHz. Critically, this is accomplished using mass-production Printed Circuit Board (PCB) fabrication. The results of this work are presented in this poster.

Milli-Meter Wave↗
NASA NTRS2006

UWB Technology and Applications on Space Exploration

Ultra-wideband (UWB), also known as impulse or carrier-free radio technology, is one promising new technology. In February 2002, the Federal Communications Commission (FCC) approved the deployment of this technology. It is increasingly recognized that UWB technology holds great potential to provide significant benefits in many terrestrial and space applications such as precise positioning/tracking and high data rate mobile wireless communications. This talk presents an introduction to UWB technology and some applications on space exploration. UWB is characterized by several uniquely attractive features, such as low impact on other RF systems due to its extremely low power spectral densities, immunity to interference from narrow band RF systems due to its ultra-wide bandwidth, multipath immunity to fading due to ample multipath diversity, capable of precise positioning due to fine time resolution, capable of high data rate multi-channel performance. The related FCC regulations, IEEE standardization efforts and industry activities also will be addressed in this talk. For space applications, some projects currently under development at NASA Johnson Space Center will be introduced. These include the UWB integrated communication and tracking system for Lunar/Mars rover and astronauts, UWB-RFID ISS inventory tracking, and UWB-TDOA close-in high resolution tracking for potential applications on robonaut.

Ngo, Phong↗
DOE OSTI2024

Photoluminescence and Raman spectroscopy of wide bandgap semiconductors damaged by deep-UV laser irradiation

The effects of a pulsed, focused, deep-UV (4.66 eV) laser on wide and ultra-wide bandgap semiconductors were investigated with photoluminescence (PL) and Raman spectroscopy. Three semiconductor single crystals were studied: silicon carbide (6H-SiC), gallium nitride (GaN), and gallium oxide (β-Ga 2 O 3 ). Atomic emission lines from neutral Ga or Si were observed during the laser-damage process. For all three semiconductors, PL mapping (3.49 eV laser excitation) of the damaged material revealed visible emission bands in the 2.6–2.8 eV range, attributed to point defects. Raman spectra (2.33 eV excitation) showed a reduction in the Raman peak intensities in the damaged region, along with weak PL bands around 1.9–2.1 eV.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Scalable phononic metamaterials: Tunable bandgap design and multi-scale experimental validation

Phononic metamaterials offer unprecedented control over wave propagation, making them essential for applications such as vibration isolation, waveguiding, and acoustic filtering. However, achieving scalable and precisely tunable bandgap properties across different length scales remains challenging. This study presents a user-friendly design framework for phononic metamaterials, enabling ultra-wide bandgap tunability (B/ω c ratios up to 172 %) across multiple frequency ranges and scales. Using finite element simulations of a Yablonovite-inspired unit cell, we establish a comprehensive parametric design space that illustrates how geometric parameters, such as sphere size and beam diameter, controls bandgap width and frequency. The scalability and robustness of the framework are validated through experimental testing on additively manufactured structures at both macro (10 mm) and micro (80 µm) scales, fabricated using Stereolithography and Two-Photon Polymerization. Transmission loss measurements, conducted with piezoelectric transducers and laser vibrometry, closely match simulations in the kHz and MHz frequency ranges, confirming the reliability and consistency of the bandgap behavior across scales. This work bridges theory and experiments at multiple scales, offering a practical methodology for the rapid design of phononic metamaterials and expanding their potential for diverse applications across a broad range of frequencies.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Origin of proton irradiation-induced deep acceptors in Al 0.70 Ga 0.30 N

Deep level defect introduction and carrier removal were characterized using steady-state photocapacitance (SSPC), deep level transient spectroscopy (DLTS) and lighted capacitance–voltage for proton irradiated n-type Al 0.70 Ga 0.30 N Schottky diodes grown by metal-organic vapor phase epitaxy on AlN-on-sapphire templates. SSPC observed deep levels in the as-grown diode with zero-phonon transition energies of 2.20, 2.65, 3.10, 3.40, and 4.65 eV relative to the conduction band minimum (E c ), and an additional deep level emerged at 1.20 eV with irradiation. Lighted capacitance–voltage measurements quantified the deep level concentration (N t ) of states detected by SSPC, and it was observed that N t increased with proton fluence only for the 1.2 and 4.65 eV levels. Carrier removal was much larger than the increase in N t of the 1.2 and 4.65 eV deep levels, suggesting that radiation-induced deep level compensators existed beyond what was detected with SSPC. DLTS detected additional, proton-induced deep acceptors at E c —0.55, 0.82, and 1.16 eV, the latter of which is likely the same 1.20 eV deep state observed by SSPC. The concentration of the E c —0.82 eV defect state was large enough to reconcile carrier removal with total deep level introduction. Comparing the E c —0.82 and 1.16 eV deep acceptor levels to previous experimental and theoretical reports suggests that their atomistic origins could be the nitrogen vacancy (V N ) and oxygen substituting on the nitrogen sub-lattice (O N ), respectively. This defect behavior contrasts starkly with GaN, where V N and O N are shallow donors, and demonstrates that the electronic properties of defects can evolve drastically within the AlGaN alloy system ranging from wide bandgap GaN to ultra-wide bandgap AlN.

Armstrong, Andrew Michael [Sandia National Laborat↗