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At least 19 records

Tailored Frequency Conversion in Nonlinear Subwavelength Grating Metaslabs

The use of metaslab waveguides consisting of subwavelength gratings (SWGs) is proposed as a highly flexible approach to obtain phase‐matched frequency conversion in nonlinear integrated devices. Control over the phase matching (PM) condition is achieved through modification of the linear modal propagation constants by the SWG. The method is experimentally demonstrated by fabrication of 0.4 mm‐long GaAs metaslabs designed for second harmonic generation of near‐infrared light. A controlled spectral shift of up to 100 nm in the PM condition, relative to a uniform slab is observed. Excellent agreement is found between the experimental results and finite‐difference eigenmode simulations, which predict a tunable frequency conversion bandwidth of ∼300 nm for the design parameters. The different regimes of PM control supported by the structure are discussed. This work highlights the potential of SWGs as building blocks for tailored frequency conversion in nonlinear integrated devices.

Form birefringence↗

Uncertainty Quantification for a Multi-phase Carbon Equation of State Model

Many physics models have tunable parameters that are calibrated by matching the model output to experimental or calculated data. However, given that calibration data often contain uncertainty and that different model parameter sets might result in a very similar simulated output for a finite calibration data set, it is advantageous to provide an ensemble of parameter sets that are consistent with the calibration data. Uncertainty quantification (UQ) provides a means to generate such an ensemble in a statistically rigorous fashion. In this work, we perform UQ for a multi-phase equation of state (EOS) model for carbon containing the diamond, graphite, and liquid phases. We use a Bayesian framework for the UQ and introduce a novel strategy for including phase diagram information in the calibration. The method is highly general and accurately reproduces the calibration data without any material-specific prior knowledge of the EOS model parameters.

36 MATERIALS SCIENCE↗

Topological resonance and single-optical-cycle valley polarization in gapped graphene

For gapped graphene, we predict that an intense ultrashort (single-oscillation) circularly polarized optical pulse can induce a large population of the conduction band and a large valley polarization. With an increase in the band gap, the magnitude of the valley polarization gradually increases from zero (for the native gapless graphene) to a value on the order of unity. The energy bandwidth of the electrons excited into the conduction band can be very large (≳10 eV for a reasonable pulse amplitude of ~0.5 V/Å). These phenomena are due to the effect of topological resonance: The matching of the topological (geometric) phase and the dynamic phase. Gapped graphene with a tunable band gap can be used as a convenient generic model of two-dimensional semiconductors with honeycomb generic lattice structures and broken inversion symmetry, such as transition-metal dichalcogenides.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Geometric control of hyperbolic exciton-polariton condensate dimers

Coupled many-body quantum systems exhibit rich emergent physics with diverse stationary and dynamical behaviours. By engineering platforms with tunable and distinct coupling mechanisms, new insights emerge into the collective behaviour of coupled many body systems. Particles can be exchanged via evanescent or ballistic coupling: the former, based on proximity, yields large spectral splitting, while the latter requires strict phase-matching, analogous to phase-coupled harmonic oscillators and has a smaller impact on the energy landscape. We demonstrate an all-optically tunable quantum fluid dimer based on exciton-polariton condensates in a photonic crystal waveguide with hyperbolic (saddle-like) dispersion. Varying the dimer’s angle relative to the grating tunes the coupling from evanescent to ballistic. We directly observe spectral features and mass flow shaped by the saddle dispersion. This work highlights photonic crystals as powerful platforms to explore condensed matter phenomena lying at the interface between delay-coupled nonlinear oscillators and tight binding physics.

Georgakilas, Ioannis [IBM Research-Zurich, Rüschli↗

Tunable and efficient ultraviolet generation with periodically poled lithium niobate

On-chip ultraviolet (UV) sources are of great interest for building compact and scalable atomic clocks, quantum computers, and spectrometers. However, few material platforms are suitable for integrated UV light generation and manipulation. Of these materials, thin-film lithium niobate offers unique advantages such as sub-micron modal confinement, strong nonlinearity, and quasi-phase matching. Despite these characteristics, its utilization in the UV has remained elusive because of the substantial sensitivity of standard quasi-phase matching to fabrication imperfections, the photorefractive effect, and relatively large losses in this range. Here, we present efficient (197 ± 5%/W/cm 2 ) second harmonic generation of UV-A light in a periodically poled lithium niobate nanophotonic waveguide. We achieve on-chip UV powers of ~30 µW and linear wavelength tunability using temperature. These results are enabled with large cross section waveguides, which leads to first-order UV quasi-phase-matching with relatively long poling periods (>1.5 µm). By varying the poling period, we have achieved the shortest reported wavelength (355 nm) generated through frequency doubling in thin-film lithium niobate. Furthermore, our results open up new avenues for UV on-chip sources and chip-scale photonics through compact frequency-doubling of common near-IR laser diodes.

42 ENGINEERING↗

Visible-telecom tunable dual-band optical isolator based on dynamic modulation in thin-film lithium niobate

Optical isolators are an essential component of photonic systems. Current integrated optical isolators have limited bandwidths due to stringent phase-matching conditions, resonant structures, or material absorption. Here, we demonstrate a wideband integrated optical isolator in thin-film lithium niobate photonics. We use dynamic standing-wave modulation in a tandem configuration to break Lorentz reciprocity and achieve isolation. We measure an isolation ratio of 15 dB and insertion loss below 0.5 dB for a continuous wave laser input at 1550 nm. In addition, we experimentally show that this isolator can simultaneously operate at visible and telecom wavelengths with comparable performance. Isolation bandwidths up to ∼100 nm can be achieved simultaneously at both visible and telecom wavelengths, limited only by the modulation bandwidth. Our device’s dual-band isolation, high flexibility, and real-time tunability can enable novel non-reciprocal functionality on integrated photonic platforms.

Shah, Manav↗

Efficient and tunable blue light generation using lithium niobate nonlinear photonics

Thin-film lithium niobate (LN) has recently emerged as a playground for chip-scale nonlinear optics and leads to efficient frequency conversions from near-infrared to near-visible bands. For many nonlinear and quantum photonics applications, it is desirable to operate deep into the visible band within LN's transparency window. However, the strong material dispersion at short wavelengths makes phase-matching difficult, necessitating sub-micrometer scale control of domain structures for efficient phase-matching. Here, we report the operation of thin film LN in the blue wavelength and high fidelity poling of the thin-film LN waveguide to this regime. As a result, quasi-phase matching is realized between IR (871 nm) and blue (435.5 nm) wavelengths in a straight waveguide and prompts strong blue light generation with a conversion efficiency (1040% ± 140%/W). This blue second harmonic generator exhibits stable temperature tunability, which is important for applications that require precise frequency alignment, such as atomic clocks.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Ultralow-threshold thin-film lithium niobate optical parametric oscillator

Materials with strong second-order ( χ <#comment/> ( 2 ) ) optical nonlinearity, especially lithium niobate, play a critical role in building optical parametric oscillators (OPOs). However, chip-scale integration of low-loss χ <#comment/> ( 2 ) materials remains challenging and limits the threshold power of on-chip χ <#comment/> ( 2 ) OPO. Here we report an on-chip lithium niobate optical parametric oscillator at the telecom wavelengths using a quasi-phase-matched, high-quality microring resonator, whose threshold power ( ∼ <#comment/> 30 µ <#comment/> W ) is 400 times lower than that in previous χ <#comment/> ( 2 ) integrated photonics platforms. An on-chip power conversion efficiency of 11% is obtained from pump to signal and idler fields at a pump power of 93 µW. The OPO wavelength tuning is achieved by varying the pump frequency and chip temperature. With the lowest power threshold among all on-chip OPOs demonstrated so far, as well as advantages including high conversion efficiency, flexibility in quasi-phase-matching, and device scalability, the thin-film lithium niobate OPO opens new opportunities for chip-based tunable classical and quantum light sources and provides a potential platform for realizing photonic neural networks.

Lu, Juanjuan (ORCID:0000000319389119)↗

Structural anisotropy in Sb thin films

Sb thin films have attracted wide interest due to their tunable band structure, topological phases, high electron mobility, and thermoelectric properties. We successfully grow epitaxial Sb thin films on a closely lattice-matched GaSb(001) surface by molecular beam epitaxy. We find a novel anisotropic directional dependence on their structural, morphological, and electronic properties. The origin of the anisotropic features is elucidated using first-principles density functional theory (DFT) calculations. The growth regime of crystalline and amorphous Sb thin films was determined by mapping the surface reconstruction phase diagram of the GaSb(001) surface under Sb 2 flux, with confirmation of structural characterizations. Crystalline Sb thin films show a rhombohedral crystal structure along the rhombohedral (211) surface orientation parallel to the cubic (001) surface orientation of the GaSb substrate. At this coherent interface, Sb atoms are aligned with the GaSb lattice along the [1̄10] crystallographic direction but are not aligned well along the [110] crystallographic direction, which results in anisotropic features in reflection of high-energy electron diffraction patterns, misfit dislocation formation, surface morphology, and transport properties. Our DFT calculations show that the preferential orientation of the rhombohedral Sb (211) plane may originate from the GaSb surface, where Sb atoms align with the Ga and Sb atoms on the reconstructed surface. The formation energy calculations confirm the stability of the experimentally observed structures. Our results provide optimal film growth conditions for further studies of novel properties of Bi 1-x Sb x thin films with similar lattice parameters and an identical crystal structure, as well as functional heterostructures of them with III–V semiconductor layers along the (001) surface orientation, supported by a theoretical understanding of the anisotropic film orientation.

36 MATERIALS SCIENCE↗

Broad band tunable energy electron beam pulser

An electromagnetic mechanical pulser implements a transverse wave metallic comb stripline TWMCS kicker having inwardly opposing teeth that retards a phase velocity of an RF traveling wave to match the kinetic velocity of a continuous electron beam, causing the beam to oscillate before being chopped into pulses by an aperture. The RF phase velocity is substantially independent of RF frequency and amplitude, thereby enabling independent tuning of the electron pulse widths and repetition rate. The TWMCS further comprises an electron pulse picker (EPP) that applies a pulsed transverse electric field across the TWMCS to deflect electrons out of the beam, allowing only selected electrons and/or groups of electrons to pass through. The EPP pulses can be synchronized with the RF traveling wave and/or with a pumping trigger of a transverse electron microscope (TEM), for example to obtain dynamic TEM images in real time.

42 ENGINEERING↗

Broad band tunable energy electron beam pulser

An electromagnetic mechanical pulser implements a transverse wave metallic comb stripline TWMCS kicker having inwardly opposing teeth structured to retard a phase velocity of an RF traveling wave propagated therethrough to match the kinetic velocity of a continuous electron beam simultaneously propagated therethrough. The kicker imposes transverse oscillations onto the beam, which is subsequently chopped into pulses by an aperture. The RF phase velocity is substantially independent of RF frequency and amplitude, thereby enabling independent tuning of the electron pulse widths and repetition rate. The exterior surface of the kicker is conductive, thereby avoiding electron charging. In embodiments, various elements of the kicker and/or aperture can be mechanically varied to provide further tuning of the pulsed electron beam. A divergence suppression section can include a mirror TWMCS and/or magnetic quadrupoles. RF can be applied to a down-selecting TWMCS downstream of the aperture to reduce the pulse repetition rate.

Jing, Chunguang↗

A Systematic Framework for Tuning Open-Source Multifunctional IBR Models To Emulate OEM Black-Box Fault Dynamics

This paper presents a systematic framework to tune a generic IBR EMT model to match with an OEM provided balckbox inverter model based on the fault current responses. The key learnings and findings are summarized as follows: The tunable key parameters include inner control loops and current limiters to align the fault current magnitude, sequence content, and phase trajectories with the OEM models across diverse fault type and locations. The tuned model's fidelity is validated through comparative analysis with an OEM blackbox model, assessing both the fault current response and the responses of multiple relay elements. The results demonstrate the tuned generic model can trigger relay decision logic that is identical or near identical to that of the OEM model, thus generating very good match model for fault studies.

24 POWER TRANSMISSION AND DISTRIBUTION↗

A New Platform for Twistronics: Perovskite Moiré Superlattices Beyond van der Waals

Moiré superlattices have reshaped condensed‐matter physics by enabling twist‐angle engineering of electronic and excitonic states, traditionally in van der Waals (vdW) systems. This Perspective focuses on perovskites as a transformative non‐van der Waals (non‐vdW) platform for twistronics. These materials are distinguished by ionic‐covalent bonding and soft octahedral lattices that support deep moiré potentials (≈100–200 meV), which in turn yield bright, room‐temperature excitons and tunable quantum phenomena. We organize recent advances into two core classes: (i) moiré superlattices constructed from 2D Ruddlesden‐Popper (RP) perovskites via spontaneous or guided twisted stacking; and (ii) moiré architectures in 3D perovskite lamellae, achieved through topotactic 2D RP‐to‐3D conversion and ligand‐induced self‐assembly. Key experimental observations in these systems include twist‐tunable moiré periods, suppressed exciton–exciton annihilation, flat band‐like transport, and ferroelectric vortex lattices in their oxide perovskite counterparts. Here, we outline key bottlenecks, including defects arising during phase conversion, stringent lattice‐matching requirements, and the absence of in situ twist metrology, and highlight opportunities in lattice‐mismatched heterostructures and multifunctional quantum‐optoelectronic devices. Collectively, these advances establish perovskite moiré systems as a critical bridge between fundamental moiré physics and room‐temperature technological applications.

2D Ruddlesden–Popper perovskites↗

Design of Hopfield Networks Based on Superconducting Coupled Oscillators

The global energy shortage has driven the development of many energy-efficient computational platforms beyond Moore's law, among which brain-inspired neuromorphic computing is one of the promising solutions. Associative memory and pattern recognition are important computations solved by brain-inspired Hopfield networks. Classical Hopfield networks store memories via fixed point attractors of their dynamics. In oscillatory Hopfield networks, these attractors are replaced by periodic orbits. Here, we design an oscillatory Hopfield network based on coupled superconducting oscillators. We first employ a mathematical phase reduction approach to map networks of coupled superconducting rapid single flux quantum (RSFQ) ring oscillators to coupled Kuramoto phase-oscillator networks. We use this theory to numerically optimize the hardware's mutual inductances in order to directly match the phase-reduced superconducting oscillators to a model of phase-oscillator-based Hopfield networks. The resulting network can store multiple oscillatory phase-locked memory patterns and recover the patterns based on the initial phase conditions. As different pattern recognition tasks, or learning, require tunable connectivity strengths between the oscillatory nodes, we further employ a coupler circuit that enables tuning the coupling strength between two oscillators by applying an external flux. We demonstrate the functionality of our design through numerical simulations of a small example network with oscillators operating at 86 GHz and recognizing patterns within 10 ns. Our approach enables the learning and retrieval of dynamical memory patterns with a wide range of applications where rhythmic dynamic output is beneficial.

Cheng, Ran↗

Disorder-Tunable ZnGeP2 for Epitaxial Top Cells on Si

There has been a longstanding search for top cell materials for Si-based tandems. ZnGeP 2 is one material that could fit this need. It is lattice matched to Si and has the potential for tuning its band gap at fixed lattice constant via cation ordering. In this study, we investigate the effects of growth and annealing conditions on the structure of ZnGeP 2 thin films. Films were deposited amorphous and then annealed ex-situ. Using low anneal temperatures or short anneal times, we were able to kinetically trap the disordered phase. We also found composition to play a role in the degree of ordering in our films. Our findings support the hypothesis that ZnGeP 2 could be implemented as a material with tunable properties at fixed lattice constant through cation ordering.

14 SOLAR ENERGY↗

Stroboscopic ultrafast imaging using RF strip-lines in a commercial transmission electron microscope

The development of ultrafast electron microscopy (UEM), specifically stroboscopic imaging, has brought the study of structural dynamics to a new level by overcoming the spatial limitations of ultrafast spectroscopy and the temporal restrictions of traditional TEM simultaneously. Combining the concepts governing both techniques has enabled direct visualization of dynamics with spatiotemporal resolutions in the picosecond-nanometer regime. Here, in this study, we push the limits of imaging using a pulsed electron beam via RF induced transverse deflection based on the newly developed 200 keV frequency-tunable strip-line pulser. We demonstrate 0.2 nm spatial resolution at high magnifications and elucidation of Lorentz imaging using the phase-microscopy method. We also present beam coherence measurements and expand our study using the breathing modes of a silicon interdigitated comb under RF excitation which achieves improved temporal synchronization between the electron pulse-train and electric field. A new RF holder has also been developed with impedance matching to the RF signal to minimize transmission power loss to samples and its performance is compared with a conventional sample holder.

47 OTHER INSTRUMENTATION↗

Advances in Molecular Beam Epitaxy Growth of Ultra-Wide Bandgap Ga2O3 Based Alloys

Gallium oxide (Ga2O3) is an emerging ultra-wide bandgap semiconductor material that has attracted attention for its potential to outperform existing SiC and GaN based devices operating at high breakdown voltages and high temperature. Isovalent alloying of In and Al in Ga2O3 provides the ability to engineer bandgap energy and strain of the material. Alloying with Al increases the bandgap energy and the theoretically achievable Baliga's figure of merit, a key measure of a material's ultimate performance limits for high power switching devices. Alloying with In introduces compressive strain and can be used to counteract the tensile strain of Al incorporation. The resulting (AlxGa1-x-yIny)2O3 alloy can be lattice-matched to commercially available Ga2O3 wafers and has a tunable bandgap energy greater than that of Ga2O3, 4.76 eV. Such lattice-matched material can be grown arbitrarily thick without the detrimental effects of elastic strain and relaxation, making it suitable for high voltage diodes and transistors. However, efforts to synthesize isovalent alloys are complicated by their tendency to phase separate into corundum Al2O3 or bixbyite In2O3. Literature reports of the quaternary (AlxGa1-x-yIny)2O3 are limited to <1% unintentional indium incorporation in In-catalyzed (AlxGa1-x)2O3. The primary limitation to quaternary growth is the limited incorporation of indium at elevated growth temperatures. This limited incorporation is due to both the volatility of indium oxide and Al and Ga cation exchange reactions which replace indium in In2O3. We report on the development of a novel high-throughput molecular beam epitaxy (MBE) technique to screen the growth conditions for the ternary alloy (InyGa1-y)2O3, and the application of these findings to the first successful synthesis of phase pure monoclinic (AlxGa1-x-yIny)2O3 by MBE. By leveraging the unique sub-oxide chemistry of Ga2O3 and in-situ monitoring of crystal properties by reflection high-energy electron diffraction (RHEED), a cyclical growth and etch-back method is developed and applied to rapidly characterize the (InyGa1-y)2O3 growth space. This cyclical method provides approximately 10x increase in experimental throughput and up to 46x improvement in Ga2O3 substrate utilization. Appropriate growth conditions for monoclinic (InyGa1- y)2O3 are identified by machine learning analysis of RHEED patterns and targeted growths are characterized ex-situ to confirm improved In incorporation. These growth conditions are then combined with established (AlxGa1-x)2O3 growth conditions to grow quaternary (AlxGa1-x-yIny)2O3 with Al mole fractions ranging from 1.4% - 24.4% and In mole fractions ranging from 3.1% to 15.5%. The chemical and optical properties of the alloys are investigated by XRD, XPS, and spectroscopic ellipsometry. A lattice-matched (AlxGa1-x-yIny)2O3 alloy is examined by 4D-STEM and the chemical and physical uniformity of Al and In incorporation are discussed.

alloy↗