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TmSi crystallizes in the orthorhombic Cmcm space group. The structure is three-dimensional. Tm is bonded in a 5-coordinate geometry to seven equivalent Si atoms. There are a spread of Tm–Si bond distances ranging from 2.91–3.09 Å. Si is bonded in a 9-coordinate geometry to seven equivalent Tm and two equivalent Si atoms. Both Si–Si bond lengths are 2.49 Å.
TmSI crystallizes in the hexagonal P-6 space group. The structure is three-dimensional. there are two inequivalent Tm3+ sites. In the first Tm3+ site, Tm3+ is bonded in a trigonal planar geometry to three S2- and six I1- atoms. There are two shorter (2.58 Å) and one longer (2.59 Å) Tm–S bond lengths. There are a spread of Tm–I bond distances ranging from 3.60–3.65 Å. In the second Tm3+ site, Tm3+ is bonded in a trigonal planar geometry to three equivalent S2- and six equivalent I1- atoms. All Tm–S bond lengths are 2.58 Å. All Tm–I bond lengths are 3.65 Å. There are two inequivalent S2- sites. In the first S2- site, S2- is bonded in a trigonal planar geometry to three Tm3+ and six I1- atoms. There are four shorter (3.64 Å) and two longer (3.65 Å) S–I bond lengths. In the second S2- site, S2- is bonded in a trigonal planar geometry to three equivalent Tm3+ and six equivalent I1- atoms. All S–I bond lengths are 3.62 Å. There are two inequivalent I1- sites. In the first I1- site, I1- is bonded to six Tm3+ and six S2- atoms to form a mixture of distorted edge and face-sharing ITm6S6 cuboctahedra. In the second I1- site, I1- is bonded to six equivalent Tm3+ and six equivalent S2- atoms to form a mixture of distorted edge and face-sharing ITm6S6 cuboctahedra.
A qubit device for use in a quantum computing environment includes a semiconductor substrate, an insulating layer disposed on at least a portion of an upper surface of the substrate, and a transition metal silicide (TMSi) heterojunction disposed on at least a portion of an upper surface of the insulating layer. The TMSi heterojunction includes a link layer and at least first and second TMSi regions coupled with the link layer. The link layer may include a normal conductor, thereby forming a superconductor-normal conductor-superconductor (SNS) junction, or a geometric constriction, thereby forming a superconductor-geometric constriction-superconductor (ScS) junction. The link layer may form at least a portion of a channel including intrinsic or doped silicon.
This X-ray photoemission (XPS) study demonstrates a correlation of intrinsic TM-Si chemical bond formation with Schottky barrier heights for the near-noble transition metals (TM = Ni, Pd, Pt) and their corresponding silicides (TM2Si and TMSi) on Si(100). It is found that the barrier height correlates with the strength of the TM-Si orbital interaction as well as with the charge density around the Si atom. These observations suggest a dominant role for intrinsic chemical interactions in establishing the Schottky barrier heights in these TM-Si systems.