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TmGa crystallizes in the orthorhombic Cmcm space group. The structure is three-dimensional. Tm is bonded in a 7-coordinate geometry to seven equivalent Ga atoms. There are a spread of Tm–Ga bond distances ranging from 3.01–3.17 Å. Ga is bonded in a 9-coordinate geometry to seven equivalent Tm and two equivalent Ga atoms. Both Ga–Ga bond lengths are 2.61 Å.
The decomposition mechanisms of AsH3, trimethylgallium (TMGa), and mixtures of the two have been studied in an atmospheric-pressure flow system with the use of D2 to label the reaction products which are analyzed in a time-of-flight mass spectrometer. AsH3 decomposes entirely heterogeneously to give H2. TMGa decomposes by a series of gas-phase steps, involving methyl radicals and D atoms to produce CH3D, CH4, C2H6, and HD. TMGa decomposition is accelerated by the presence of AsH3. When the two are mixed, as in the organometallic vapor phase epitaxial growth of GaAs, both compounds decompose in concert to produce only CH4. A likely model is that of a Lewis acid-base adduct that forms and subsequently eliminates CH4.
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GaN holds significant potential as a material for vertical p-n diodes, enabling the realization of devices with reverse breakdown voltages of 5 kV or higher. Carbon serves as the primary compensating dopant in the growth process, incorporated into GaN during metalorganic chemical vapor deposition (MOCVD) growth. The level of carbon incorporation depends on several factors, including growth rate, ammonia flow, temperature, pressure, and trimethylgallium (TMGa) flow. Through guided empirical modeling, the carbon incorporation in GaN growth could be predicted using a single parameter based on the ratio of ammonia flow to the growth rate. This model accurately predicts carbon concentrations ranging from 1x10 17 to 5x10 14 cm -3 while maximizing growth rates. Other extrinsic dopants have either been reduced below the threshold of consideration or modeled using similar single-parameter relationships. By identifying the dominant extrinsic dopants and accounting for them, an intrinsic defect with a concentration of 2.2x10 15 cm -3 was identified. By combining these relationships, growth conditions for n-GaN were optimized, resulting in electron concentrations as low as 1x10 15 cm -3 . Leveraging these techniques, p-n diodes were grown, achieving a reverse breakdown voltage as high as 3.1 kV.
Based on the comparison between experimental data and numerical results for the growth of GaAs from TMGa, it was shown that 3D simulations are necessary to simulate rectangular CVD reactors even when operated under subcritical (Ra) conditions. The important points found are summarized in the three attached reprints. The experimental studies of mixed convection in horizontal channels have shown three regimes of high Ra (22,220) number flows. At Re = 18.5, the rolls develop very quickly, significantly modulating the axial velocity even before it reaches the beginning of the hot plate. A few centimeters downstream, the velocities become asymmetric about the vertical centerplane and at x = 12 cm, become unsteady. These asymmetries were predicted theoretically, but experimental evidence has not been published prior to this work. At Re = 36, the axial velocity is only slightly modified at x = 0. Although the flow remains steady and symmetric about the vertical centerplane, there is a small spatial oscillation in the velocities over the length of the channel. The period of this oscillation was around 5 cm. At Re = 54, the longitudinal rolls developed smoothly over a length of 30 cm, with no asymmetries, unsteadiness, or spatial oscillations. Comparison of numerical simulations of these flows to experiments has revealed the importance and difficulty of setting proper thermal boundary conditions on the sidewalls. Calculated flows and experimentally measured flows showed very similar profiles, but at different axial locations, with the rolls developing more rapidly in the experiments. This is directly attributable to partially conducting sidewalls of the apparatus being hotter in the entrance section than the adiabatic walls of the simulations. A thorough comparison of the experimental data and numerical results for a variety of sidewall boundary conditions is in preparation.