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All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Materials Data on TlPbI3 by Materials Project

TlPbI3 crystallizes in the orthorhombic Cmcm space group. The structure is three-dimensional. Tl1+ is bonded in a 8-coordinate geometry to eight I1- atoms. There are a spread of Tl–I bond distances ranging from 3.51–4.05 Å. Pb2+ is bonded to six I1- atoms to form a mixture of edge and corner-sharing PbI6 octahedra. The corner-sharing octahedral tilt angles are 45°. There are two shorter (3.25 Å) and four longer (3.27 Å) Pb–I bond lengths. There are two inequivalent I1- sites. In the first I1- site, I1- is bonded to two equivalent Tl1+ and two equivalent Pb2+ atoms to form distorted corner-sharing ITl2Pb2 tetrahedra. In the second I1- site, I1- is bonded in a 5-coordinate geometry to three equivalent Tl1+ and two equivalent Pb2+ atoms.

36 MATERIALS SCIENCE↗
NASA NTRS2019

Vapor Growth of Indium Monoiodide

Indium (I) iodide, InI, is part of a group of heavy metal iodides that can be used as room temperature radiation detectors. Other examples are HgI2, PbI2, BiI3, or TlPbI3. InI has several advantages, such as low toxicity, no solid phase transition (such as in HgI2), and no tendency to form polytypes (PbI2, BiI3 ). All binary iodides have layered structures and are quite soft, but InI is also the mechanically most stable compound of the binary compounds. Table 1 shows the main properties of InI in comparison with the other iodides and the most common room temperature radiation detector material, (Cd, Zn)Te. InI is typically grown by the unseeded Bridgman method using a nucleation tip, but Czochralski (CZ) growth has also been demonstrated. The resulting crystals have been used successfully for radiation detection, but both resistivity and mobility are usually well below theoretically predicted values. Physical vapor transport (PVT), although much slower than melt growth, is an alternative method and has been used to grow e.g. HgI2, PbI2, BiI3, CdTe. PVT growth should eliminate or reduce inclusions and impurities since it is based on sublimation, reduce intrinsic defects due to the lower growth temperature, and reduce dislocation densities due to reduced thermal and mechanical stress. As an example, PVT-grown CdTe showed a much improved structural quality compared to Bridgman- or THM-grown material.

Cröll, Arne↗
DOE OSTI2021

Inorganic Halide Perovskitoid TlPbI 3 for Ionizing Radiation Detection

Room temperature semiconductor detector (RTSD) materials for γ-ray and X-ray radiation are in great demand for the nonproliferation of nuclear materials as well as for biomedical imaging applications. Halide perovskites have attracted great attention as emerging and promising RTSD materials. In this contribution, the material synthesis, purification, crystal growth, crystal structure, photoluminescence properties, ionizing radiation detection performance, and electronic structure of the inorganic halide perovskitoid compound TlPbI 3 are reported on. This compound crystallizes in the ABX 3 non-perovskite crystal structure with a high density of d = 6.488 g·cm –3 , has a wide bandgap of 2.25 eV, and melts congruently at a low temperature of 360 °C without phase transitions, which allows for facile growth of high quality crystals with few thermally-activated defects. High-quality TlPbI 3 single crystals of centimeter-size are grown using the vertical Bridgman method using purified raw materials. A high electrical resistivity of ≈10 12 Ω·cm is readily obtainable, and detectors made of TlPbI 3 single crystals are highly photoresponsive to Ag K α X-rays (22.4 keV), and detects 122 keV γ-rays from 57 Co radiation source. The electron mobility-lifetime product µ e τ e was estimated at 1.8 × 10 –5 cm 2 ·V –1 . A high relative static dielectric constant of 35.0 indicates strong capability in screening carrier scattering and charged defects in TlPbI 3 .

36 MATERIALS SCIENCE↗