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Substrate birefringence as a source of artifacts in spintronic THz emission spectra

Terahertz (THz) emission from spintronic THz emitters (STEs) has been extensively studied, both for its potential application in THz technologies and as a tool for probing spin dynamics, conductivity, and crystal anisotropy via time-domain THz spectroscopy. However, substrate birefringence can modify the emitted THz polarization, distorting the measured spectra and leading to potential misinterpretation of the results. While some aspects of substrate birefringence on THz emission have been studied in the time domain, its effects on THz spectra have not been discussed in detail. In the THz emission spectrum from STEs, we observe distinct spectral signatures that depend on sample orientation. To understand these signatures, we use STEs grown on c-cut sapphire and systematically vary the orientation of a (100) rutile TiO 2 window in both pump-through and THz-through geometries to identify the birefringence-induced effects. These findings demonstrate that substrate birefringence plays a critical role in the emitted THz spectrum and must be carefully considered in the analysis of time-domain THz spectroscopy data. We also show that artifacts from smaller birefringence can have a more misleading effect on the THz spectra.

Shrestha, Shreya [Univ. of Delaware, Newark, DE (U

Colossal Terahertz Emission with Ultrafast Tunability Based on Van der Waals Ferroelectric NbOI 2

Abstract Terahertz (THz) technology is critical for quantum material physics, biomedical imaging, ultrafast electronics, and next‐generation wireless communications. However, standing in the way of widespread applications is the scarcity of efficient ultrafast THz sources with on‐demand fast modulation and easy on‐chip integration capability. Here the discovery of colossal THz emission is reported from a van der Waals (vdW) ferroelectric semiconductor NbOI 2 . Using THz emission spectroscopy, a THz generation efficiency an order of magnitude higher than that of ZnTe, a standard nonlinear crystal for ultrafast THz generation is observed. The underlying generation mechanisms associated are further uncovered with its large ferroelectric polarization by studying the THz emission dependence on excitation wavelength, incident polarization, and fluence. Moreover, the ultrafast coherent amplification and annihilation of the THz emission and associated coherent phonon oscillations by employing a double‐pump scheme are demonstrated. These findings combined with first‐principles calculations, inform a new understanding of the THz light–matter interaction in emergent vdW ferroelectrics and pave the way to develop high‐performance THz devices on them for quantum materials sensing and ultrafast electronics.

Subedi, Sujan [Department of Materials Science and

Paratellurite Nanowires as a Versatile Material for THz Phonon Polaritons

Polaritons, i.e., hybrid quasi-particles of light and matter resonances, have been extensively investigated due to their potential to enhance light-matter interactions. Although polaritonic applications thrive in the mid-infrared range, their extension to the terahertz (THz) range remains limited. Here, we present paratellurite (α-TeO 2 ) nanowires, a versatile material acting as a platform for different types of phonon polaritons. Utilizing synchrotron infrared nanospectroscopy from 10 to 24 THz, we uncover the polaritonic properties of α-TeO 2 nanowires, showcasing their dual functionality as both a Fabry-Pérot cavity and a waveguide for surface phonon polaritons. Furthermore, near-field measurements with a free-electron laser as a THz source reveal a localized optical contrast down to 5.5 THz, an indication of hyperbolic bands. In conclusion, our findings complement the repertoire of polaritonic materials, with significant implications for advancing THz technologies.

36 MATERIALS SCIENCE

Ultrabroadband Spacetime Nanoscopy of Terahertz Polaritons in a van der Waals Cavity

Guiding, storing, and processing light at the nanoscale hinges on understanding how polaritons — hybrid quasiparticles of light and matter — propagate and interfere in both space and time. This work introduces a synchrotron-based technique, SYnchrotron SpaceTimE Mapping (SYSTEM), which captures real-time evolution of polariton wave packets with ∼10 nm spatial and sub-100 fs temporal resolution across an ultrabroadband 5–50 THz range. Here, SYSTEM directly visualizes the creation, interference, and decay of multiple high-quality Fabry-Pérot phonon polariton cavity modes in an α-MoO 3 microcavity. These real-space, real-time observations reveal wave-packet dynamics and cavity resonances with record-high quality factors (Q ≈ 100) in the single-digit terahertz regime near 9 THz. SYSTEM thus offers a powerful and broadly applicable platform for probing and engineering ultraslow, deeply subwavelength polaritons, opening new avenues for tailoring light–matter interactions and advancing next-generation THz nanophotonic technologies.

36 MATERIALS SCIENCE

3D-printed mirror-less helicity preserving metasurface “mirror” for THz applications

Stimulated by seminal works on generalized reflection and refraction laws, metasurfaces have evolved to a highly promising research direction, as they allow a multitude of different functionalities by optically thin wave-control elements/structures. Among them, structures functioning in the low THz regime are of extensive research interest, due to their high potential in communication and sensing applications. In this paper we propose a simple THz metasurface design that exhibits ideally perfect cross-polarized reflection for linear polarization and perfect helicity-preserving reflection with a geometric (Pancharatnam–Berry) phase for circular polarization, without the presence of any back-reflector. Numerical calculations demonstrating the structure response are justified by analytical models, which provide physical insights on this response. The designed metasurfaces are fabricated using the direct laser writing 3D-printing technology, metallized with electroless silver plating, and are characterized by THz time domain spectroscopy, with the experimental results validating the corresponding theoretical ones. Applications including beam steering and focusing, exploring the Pancharatnam–Berry phase, are also demonstrated numerically. Besides those applications, the helicity preserving mirror response of our metasurfaces can be valuable, among others, also in molecular chirality sensing applications, an issue that is also highlighted here.

3D-printed metasurfaces

Terahertz conductivity of two-dimensional materials: a review

Two-dimensional (2D) van der Waals materials are shaping the landscape of next-generation devices, offering significant technological value thanks to their unique, tunable, and layer-dependent electronic and optoelectronic properties. Time-domain spectroscopic techniques at terahertz (THz) frequencies offer noninvasive, contact-free methods for characterizing the dynamics of carriers in 2D materials. They also pave the path toward the applications of 2D materials in detection, imaging, manufacturing, and communication within the increasingly important THz frequency range. In this paper, we overview the synthesis of 2D materials and the prominent THz spectroscopy techniques: THz time-domain spectroscopy, optical-pump THz-probe technique, and optical pump–probe THz spectroscopy. Through a confluence of experimental findings, numerical simulation, and theoretical analysis, we present the current understanding of the rich ultrafast physics of technologically significant 2D materials: graphene, transition metal dichalcogenides, MXenes, perovskites, topological 2D materials, and 2D heterostructures. Finally, we offer a perspective on the role of THz characterization in guiding future research and in the quest for ideal 2D materials for new applications.

2D materials

THz Radiation Generation to Enable Internal Magnetic Field Measurement of Burning Plasmas (Final Scientific Report)

A one-year experimental program was performed using the Multi-TeraWatt (MTW) laser at the Laboratory for Laser Energetics (LLE) to investigate the efficiency and physical process of laser-driven—wire THz generation. This process was evaluated as a potential high-repetition-rate source of powerful THz pulses for use in THz pulsed polarimetry of a moderate-density magnetic-confinement fusion concept developed by TAE. The goal was to develop a source for short pulses in the THz regime (150 μm wavelength) containing 10’s of mJ. The campaign tested the impact of Cu wire diameter (25, 75, 160 μm), length (250 – 750 μm), and laser irradiation orientation on THz production efficiency in comparison to 20-μm thick Cu foils. Of these targets, the 160 µm diameter, 750 µm long wires with sharpened tips and irradiated at the base were found to produce the highest energy and shortest wavelength THz pulses, exceeding 2.5 Joule/sr and meeting the requirements for the polarimetry diagnostic. The brightest THz signal was radiated in the direction of the sharpened wire tip. A combination of two models – a traveling wave antenna combined with coherent transition radiation – describes the emission pattern, pulse energy, and spectrum observed in the experiments.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY

Broadband THz Modulation via Solid–State Organic Electrochemical Devices

The sub-Terahertz and Terahertz bands play a critical role in next-generation wireless communication and sensing technologies, thanks to the large amount of available bandwidth in this spectral regime. While long-wavelength (microwave to mm-Wave) and short-wavelength (near-infrared to ultraviolet) devices are well-established and studied, the sub-THz to THz regime remains relatively underexplored and underutilized. Traditional approaches used in the aforementioned spectral regions are more difficult to replicate in the THz band, leading to the need for the development of novel devices and structures that can manipulate THz radiation effectively. Herein a novel organic, solid-state electrochemical device is presented, capable of achieving modulation depths of over 90% from ≈500 nm of a conducting polymer that switches conductivity over a large dynamic range upon application of an electronically controllable external bias. The stability of such devices under long-term, repeated voltage switching, as well as continuous biasing at a single voltage, is also explored. Switching stabilities and long-term bias stabilities are achieved over two days for both use cases. Additionally, both depletion mode (always “ON”) and accumulation mode (always “OFF”) operation are demonstrated. These results suggest applications of organic electrochemical THz modulators in large area and flexible implementations.

36 MATERIALS SCIENCE

High finesse buckled microcavities

Optical cavities are widely used in modern science and technology to enable a wide range of both quantum and classical applications. Recently, the growing demand for miniaturization and high performance has fueled the exploration of new fabrication methods beyond traditional polishing techniques and macroscopic mirrors. Visible and near-infrared (NIR) wavelengths are particularly important for quantum applications, where achieving low-loss resonators is also more challenging than in the telecom range, presenting unique challenges and opportunities for microscopic cavity systems. Here, we present a fabrication method for making NIR microcavities using buckled dielectric membrane mirrors, achieving a record finesse of 0.9 million at 780 nm for microcavities. We demonstrated flexible device geometries—including singular mirrors and mirror arrays, featuring radii of curvature ranging from 1 to 10 mm. The fabrication process offers high uniformity, high yield, and robust performance across a wide range of cavity lengths. Additionally, we can produce easy-to-assemble microcavity packages, with a total volume of ~2(4) mm 3 , featuring optical modes with a linewidth of 5.16 MHz (570 kHz) and a free spectral range (FSR) of 3.18 THz (150 GHz). Our results extend the frontier of microcavity fabrication for classical and quantum photonic technologies.

Ding, Sophie Weiyi [Harvard Univ., Cambridge, MA (

Visible-to-THz near-field nanoscopy

Optical microscopy has a key role in research, development and quality control across a wide range of scientific, technological and medical fields. However, diffraction limits the spatial resolution of conventional optical instruments to about half the illumination wavelength. A technique that surpasses the diffraction limit in the wide spectral range between visible and terahertz frequencies is scattering-type scanning near-field optical microscopy (s-SNOM). The basis of s-SNOM is an atomic force microscope in which the tip is illuminated with light from the visible to the terahertz spectral range. By recording the elastically tip-scattered light while scanning the sample below the tip, s-SNOM yields near-field optical images with a remarkable resolution of 10 nm, simultaneously with the standard atomic force microscopic topography image. This resolution is independent of the illumination wavelength, rendering s-SNOM a versatile nanoimaging and nanospectroscopy technique for fundamental and applied studies of materials, structures and phenomena. This Review presents an overview of the fundamental principles governing the measurement and interpretation of near-field contrasts and discusses key applications of s-SNOM. We also showcase emerging developments that enable s-SNOM to operate under various environmental conditions, including cryogenic temperatures, electric and magnetic fields, electrical currents, strain and liquid environments. Furthermore, all these recent developments broaden the applicability of s-SNOMs for exploring fundamental solid-state and quantum phenomena, biological matter, catalytic reactions and more.

Hillenbrand, Rainer [CIC nanoGUNE BRTA and Departm

Controlling beam trajectory and transport in a tapered helical undulator

In this paper we present a detailed discussion of the helical undulator system developed for high extraction efficiency experiments in the tapered-enhanced stimulated superradiant amplification regime. The design is based on permanent magnet technology and comprises two Halbach arrays orthogonally oriented and shifted by 90° with respect to each other. When used in low energy beamlines for THz generation, the electron beam trajectory and transport are particularly sensitive to the undulator off-axis fields so that it becomes important to complement on-axis field measurements with analysis and tuning of the higher-order field components. Here we describe how the pulsed wire measurement technique can be effectively used to retrieve on- and off-axis magnetic field characteristics of the undulator. A simple two-dipole model is developed to guide the final adjustments to the permanent magnet positions along the array to tune the quadrupole and sextupole components of the field.

free-electron lasers

Purcell enhancement of directional edge photocurrent in a van der Waals self-cavity

Cavities provide a means to manipulate the optical and electronic responses of quantum materials by selectively enhancing light-matter interaction at specific frequencies and momenta. While cavities typically involve external structures, exfoliated flakes of van der Waals (vdW) materials can form intrinsic self-cavities due to their small finite dimensions, confining electromagnetic fields into plasmonic cavity modes, characterized by standing-wave current distributions. While cavity-enhanced phenomena are well-studied at optical frequencies, the impact of self-cavities on nonlinear electronic responses—such as directional photocurrent—remains largely unexplored, particularly in the terahertz regime, critical for emerging ultrafast optoelectronic technologies. Here, we report a self-cavity-induced Purcell enhancement of directional photocurrents in the vdW semimetal WTe 2 . Using ultrafast optoelectronic circuitry, we measured coherent near-field THz emission resulting from nonlinear photocurrents excited at the sample edges. We observed enhanced emission at finite frequencies, tunable via excitation fluence and sample geometry, which we attribute to plasmonic interference effects controlled by the cavity boundaries. We developed an analytical theory that captures the cavity resonance conditions and spectral response across multiple devices. Our findings establish WTe 2 as a bias-free, geometry-tunable THz emitter and demonstrate the potential of self-cavity engineering for controlling nonlinear, nonequilibrium dynamics in quantum materials.

condensed-matter physics

Sub-THz passive detector performance evaluation with RadiaBeam photoinjector

Wakefield accelerators, based on THz and mm-wave structures, promise to reach the highest energies in record small footprints. However, operation at such frequencies is associated with strong generation of dipole modes that can destroy the beams, which requires controlling the electron beam position at the micron scale. The existing conventional techniques for electron beam position monitoring are not applicable for sub-THz structures due to the space constraints. Here, on the other hand, if dipole modes amplitudes can be measured precisely at different planes, one can derive beam position relative to the central axis. For such a technique a reliable and cost-effective sensor capable of operating in high repletion rate regime is required. In this paper we review the experimental evaluation of a passive sensor candidate for such applications using RadiaBeam 4.5 MeV photoinjector.

Accelerator

Quantitative Infrared-to-Terahertz Nanospectroscopy of Semiconductors

Semiconductor technology now employs few-nanometer features, necessitating tools probing electronic properties on the same length scale. While the concentration of free charge carriers is routinely measured, the scattering rate remains challenging to access at the nanoscale. Here, we present ultrabroadband (5–50 THz) synchrotron infrared nanospectroscopy as a quantitative metrology tool for semiconductors. This technique can determine both the charge carrier concentration and scattering rate with percent-level accuracy, and it is inherently capable of ∼10 nm spatial resolution. We study silicon with different doping levels and confirm the method’s accuracy by statistical analysis and comparison with established far-field infrared spectroscopy. Near-field measurements systematically reveal charge-carrier concentrations ∼30% lower than far-field values, consistent with increased surface sensitivity and surface depletion. Our work establishes synchrotron infrared nanospectroscopy as a precise tool for quantitative nanoscale semiconductor characterization and paves the way toward all-optical characterization of surface depletion effects.

36 MATERIALS SCIENCE

Exploring the effects of molecular beam epitaxy growth characteristics on the temperature performance of state-of-the-art terahertz quantum cascade lasers

This study conducts a comparative analysis, using non-equilibrium Green’s functions (NEGF), of two state-of-the-art two-well (TW) Terahertz Quantum Cascade Lasers (THz QCLs) supporting clean 3-level systems. The devices have nearly identical parameters and the NEGF calculations with an abrupt-interface roughness height of 0.12 nm predict a maximum operating temperature (T max ) of ~ 250 K for both devices. However, experimentally, one device reaches a T max of ~ 250 K and the other a T max of only ~ 134 K. Both devices were fabricated and measured under identical conditions in the same laboratory, with high quality processes as verified by reference devices. The main difference between the two devices is that they were grown in different MBE reactors. Our NEGF-based analysis considered all parameters related to MBE growth, including the maximum estimated variation in aluminum content, growth rate, doping density, background doping, and abrupt-interface roughness height. From our NEGF calculations it is evident that the sole parameter to which a drastic drop in T max could be attributed is the abrupt-interface roughness height. We can also learn from the simulations that both devices exhibit high-quality interfaces, with one having an abrupt-interface roughness height of approximately an atomic layer and the other approximately a monolayer. However, these small differences in interface sharpness are the cause of the large performance discrepancy. This underscores the sensitivity of device performance to interface roughness and emphasizes its strategic role in achieving higher operating temperatures for THz QCLs. We suggest Atom Probe Tomography (APT) as a path to analyze and measure the (graded)-interfaces roughness (IFR) parameters for THz QCLs, and subsequently as a design tool for higher performance THz QCLs, as was done for mid-IR QCLs. Our study not only addresses challenges faced by other groups in reproducing the record T max of ~ 250 K and ~ 261 K but also proposes a systematic pathway for further improving the temperature performance of THz QCLs beyond the state-of-the-art.

77 NANOSCIENCE AND NANOTECHNOLOGY

High‐Asymmetry Metasurface: A New Solution for Terahertz Resonance via Active Learning‐Augmented Diffusion Model

Terahertz (THz) metamaterials with high‐figure‐of‐merit (high‐FoM) performance resonance are essential for advancing sensors, detectors, and imagers. Conventional designs focus on symmetric or low‐asymmetry geometric structures, leaving high‐asymmetry designs largely unexplored due to the inefficiency of trial‐and‐error‐based rational design. Recent deep learning techniques offer automation and acceleration but are constrained by the need for large datasets inherent to their data‐driven nature. Here, a novel prior knowledge‐guided generative model augmented by a physics‐constrained active learning mechanism to design high‐asymmetry metamaterials. An advanced diffusion model learns features from a small set of classical structures with high‐FoM THz resonance and generates new high‐asymmetry structures. To mitigate the limited number of classical structures, the generated high‐asymmetry structures are actively selected and integrated into the initial training dataset based on their physical characteristics. Experimental results demonstrate the superior resonance performance of the generated high‐asymmetry metamaterials over classical designs, exhibiting improvements exceeding 30% in key resonance metrics. Remarkably, this performance is attained using only 68 classical structures as the initial training dataset, significantly reducing the data requirements for deep learning‐based metamaterial design. The proposed scheme for generating high‐asymmetry structures provides a new effective and efficient solution for high‐FoM resonance, expanding applications in high‐sensitivity THz metadevices.

diffusion model

Magnon spectroscopy in the electron microscope

Abstract The miniaturization of transistors is approaching its limits owing to challenges in heat management and information transfer speed 1 . To overcome these obstacles, emerging technologies such as spintronics 2 are being developed, which make use of the electron’s spin as well as its charge. Local phenomena at interfaces or structural defects will greatly influence the efficiency of spin-based devices, making the ability to study spin-wave propagation at the nanoscale and atomic scale a key challenge 3,4 . The development of high-spatial-resolution tools to investigate spin waves, also called magnons, at relevant length scales is thus essential to understand how their properties are affected by local features. Here we detect bulk THz magnons at the nanoscale using scanning transmission electron microscopy (STEM). By using high-resolution electron energy-loss spectroscopy with hybrid-pixel electron detectors, we overcome the challenges posed by weak signals to map THz magnon excitations in a thin NiO nanocrystal. Advanced inelastic electron scattering simulations corroborate our findings. These results open new avenues for detecting magnons and exploring their dispersions and their modifications arising from nanoscale structural or chemical defects. This marks a milestone in magnonics and presents exciting opportunities for the development of spintronic devices.

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